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深圳市芯福林电子有限公司
BZX384B6V8-HE3-18
数量-
厂家-
封装-
批号-
-
QQ：2881495808 复制
QQ：308365177 复制
13418564337

首天国际（深圳）科技有限公司
BZX384B6V8-HE3-18
数量-
厂家-
封装-
批号-
-
QQ：528164397 复制
QQ：1318502189 复制
0755-82807802/82807803

北京元坤伟业科技有限公司
BZX384B6V8-HE3-18
数量-
厂家-
封装-
批号-
-
QQ：857273081 复制
QQ：1594462451 复制
010-62104931、62106431、62104891、62104791

深圳市中利达电子科技有限公司
BZX384B6V8-HE3-18
数量-
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封装-
批号-
-
QQ：1902134819 复制
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0755-83200645/13686833545

柒号芯城电子商务（深圳）有限公司
BZX384B6V8-HE3-18
数量-
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-
QQ：2881677436 复制
QQ：2881620402 复制
18922803401

深圳市惊羽科技有限公司
BZX384B6V8-HE3-18

数量236000
厂家VISHAY-威世
封装SOD-323
批号▉▉：2年内
▉▉￥0.5元一有问必回一有长期订货一备货HK仓库
QQ：43871025 复制
131-4700-5145---Q-微-恭-候---有-问-秒-回

深圳市惠诺德电子有限公司
BZX384B6V8-HE3-18

数量29500
厂家Vishay General Semiconductor - Diodes Di
封装DIODE ZENER 6.8V 200MW SOD323
批号21+
只做原装现货代理
QQ：1211267741 复制
QQ：1034782288 复制
159-7688-9073

深圳市和谐世家电子有限公司
BZX384B6V8-HE3-18

数量13450
厂家Vishay Semiconductor Diodes Division
封装SOD-323
批号最新批号
进口原装
QQ：1158840606 复制
0755+84501032

深圳市科雨电子有限公司
BZX384B6V8-HE3-18

数量16750
厂家VISHAY
封装SOD-323
批号21+
★体验愉快问购元件！！就找我吧!单价:1元BZX384-B75
QQ：97671956 复制
171-4729-1886（微信同号）

产品型号BZX384B6V8-HE3-18的Datasheet PDF文件预览

BZX384-Series

Vishay Semiconductors

www.vishay.com

Small Signal Zener Diodes

FEATURES

Available

• Silicon planar Zener diodes

• The Zener voltages are graded according to

the international E24 standard

• Standard Zener voltage tolerance is

replace “C” with “B” for 2 % tolerance

5 %;

• AEC-Q101 qualified available

• ESD capability according to AEC-Q101:

Human body model > 8 kV

Machine model > 800 V

PRIMARY CHARACTERISTICS

PARAMETER

V_Zrange nom.

Test current I_ZT

V_Zspecification

Int. construction

VALUE

2.4 to 75

2; 5

UNIT

• Base P/N-E3 - RoHS-compliant, commercial grade

• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified

Pulse current

Single

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

ORDERING INFORMATION

DEVICE NAME

ORDERING CODE

TAPED UNITS PER REEL

MINIMUM ORDER QUANTITY

BZX384C2V4-E3-08 to BZX384C75-E3-08

BZX384B2V4-E3-08 to BZX384B75-E3-08

BZX384C2V4-HE3-08 to BZX384C75-HE3-08

BZX384B2V4-HE3-08 to BZX384B75-HE3-08

BZX384C2V4-E3-18 to BZX384C75-E3-18

BZX384B2V4-E3-18 to BZX384B75-E3-18

BZX384C2V4-HE3-18 to BZX384C75-HE3-18

BZX384B2V4-HE3-18 to BZX384B75-HE3-18

3000 (8 mm tape on 7" reel)

15 000/box

BZX384-series

10 000 (8 mm tape on 13" reel)

10 000/box

PACKAGE

MOLDING COMPOUND

WEIGHT

MOISTURE SENSITIVITY

LEVEL

PACKAGE NAME

SOLDERING CONDITIONS

FLAMMABILITY RATING

MSL level 1

(according J-STD-020)

SOD-323

4.3 mg

UL 94 V-0

260 °C/10 s at terminals

ABSOLUTE MAXIMUM RATINGS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

200

UNIT

K/W

°C

Power dissipation

Device on fiberglass substrate

P_tot

R_thJA

T_j

Thermal resistance junction to ambient air Valid that electrodes are kept at ambient temperature

650

Junction temperature

150

T_stg

T_op

Storage temperature range

Operating temperature range

-65 to +150

-55 to +150

°C

Rev. 2.2, 03-Nov-16

Document Number: 85764

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BZX384-Series

Vishay Semiconductors

www.vishay.com

ELECTRICAL CHARACTERISTICS (T_amb= 25 °C, unless otherwise specified)

REVERSE

LAEKAGE

CURRENT

TEMPERATURE

COEFFICIENT OF

ZENER VOLTAGE

RANGE

TEST

CURRENT

DYNAMIC

RESISTANCE

MARKING

CODE

PART NUMBER

V_Zat I_ZT1

I_ZT1

I_ZT2

I_Rat V_R

Z_Zat I_ZT1Z_ZKat I_ZT2

_VZat I_ZT1

10^-4/°C

μA

MIN. NOM. MAX.

MAX.

TYP.

MIN.

- 9

- 8

- 7

- 6

- 5

- 3

- 2

- 1

MAX.

- 4

- 3

- 1

BZX384C2V4

BZX384C2V7

BZX384C3V0

BZX384C3V3

BZX384C3V6

BZX384C3V9

BZX384C4V3

BZX384C4V7

BZX384C5V1

BZX384C5V6

BZX384C6V2

BZX384C6V8

BZX384C7V5

BZX384C8V2

BZX384C9V1

BZX384C10

BZX384C11

BZX384C12

BZX384C13

BZX384C15

BZX384C16

BZX384C18

BZX384C20

BZX384C22

BZX384C24

BZX384C27

BZX384C30

BZX384C33

BZX384C36

BZX384C39

BZX384C43

BZX384C47

BZX384C51

BZX384C56

BZX384C62

BZX384C68

BZX384C75

2.2

2.5

2.8

3.1

3.4

3.7

2.4

2.7

3.0

3.3

3.6

3.9

4.3

4.7

5.1

5.6

6.2

6.8

7.5

8.2

9.1

2.6

2.9

3.2

3.5

3.8

4.1

4.6

70 (≤ 100)

275

75 (≤ 100) 300 (≤ 600)

80 (≤ 95) 325 (≤ 600)

85 (≤ 95) 350 (≤ 600)

85 (≤ 90) 375 (≤ 600)

85 (≤ 90) 400 (≤ 600)

80 (≤ 90) 410 (≤ 600)

50 (≤ 80) 425 (≤ 500)

40 (≤ 60) 400 (≤ 480)

4.4

4.8

5.2

5.8

6.4

5.4

15 (≤ 40)

6 (≤ 10)

80 (≤ 400)

40 (≤ 150)

30 (≤ 80)

6.6

7.2

7.9

8.7

9.6

10.6

11.6

12.7

14.1

15.6

17.1

19.1

21.2

23.3

25.6

28.9

6 (≤ 15)

30 (≤ 80)

7.7

8.5

9.4

10.4

11.4

12.4

13.8

15.3

16.8

18.8

20.8

22.8

25.1

0.7

0.5

0.2

0.1

0.05

6 (≤ 15)

40 (≤ 80)

6 (≤ 15)

40 (≤ 100)

50 (≤ 150)

50 (≤ 170)

50 (≤ 200)

50 (≤ 225)

60 (≤ 225)

60 (≤ 250)

65 (≤ 300)

70 (≤ 300)

75 (≤ 325)

80 (≤ 350)

8 (≤ 20)

10 (≤ 20)

10 (≤ 25)

10 (≤ 30)

10 (≤ 40)

10 (≤ 45)

15 (≤ 55)

20 (≤ 55)

25 (≤ 70)

25 (≤ 80)

30 (≤ 80)

35 (≤ 80)

35 (≤ 90)

0.7 V_Znom.

9.5

0.5

0.7 V_Znom.40 (≤ 130) 80 (≤ 350)

0.7 V_Znom.45 (≤ 150) 85 (≤ 375)

0.7 V_Znom.50 (≤ 170) 85 (≤ 375)

0.7 V_Znom.60 (≤ 180) 85 (≤ 400)

0.7 V_Znom.70 (≤ 200) 100 (≤ 425)

0.7 V_Znom.80 (≤ 215) 100 (≤ 450)

0.7 V_Znom.90 (≤ 240) 150 (≤ 475)

0.7 V_Znom.95 (≤ 255) 170 (≤ 500)

Rev. 2.2, 03-Nov-16

Document Number: 85764

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BZX384-Series

Vishay Semiconductors

www.vishay.com

ELECTRICAL CHARACTERISTICS (T_amb= 25 °C, unless otherwise specified)

REVERSE

LEAKAGE

CURRENT

TEMPERATURE

COEFFICIENT OF

ZENER VOLTAGE

RANGE

TEST

CURRENT

DYNAMIC

RESISTANCE

MARKING

CODE

PART NUMBER

V_Zat I_ZT1

I_ZT1

I_ZT2

I_Rat V_R

Z_Zat I_ZT1Z_ZKat I_ZT2

_VZat I_ZT1

10^-4/°C

μA

MIN. NOM. MAX.

MAX.

TYP.

MIN.

- 9

- 8

- 7

- 6

- 5

- 3

- 2

- 1

MAX.

- 4

- 3

- 1

BZX384B2V4

BZX384B2V7

BZX384B3V0

BZX384B3V3

BZX384B3V6

BZX384B3V9

BZX384B4V3

BZX384B4V7

BZX384B5V1

BZX384B5V6

BZX384B6V2

BZX384B6V8

BZX384B7V5

BZX384B8V2

BZX384B9V1

BZX384B10

BZX384B11

BZX384B12

BZX384B13

BZX384B15

BZX384B16

BZX384B18

BZX384B20

BZX384B22

BZX384B24

BZX384B27

BZX384B30

BZX384B33

BZX384B36

BZX384B39

BZX384B43

BZX384B47

BZX384B51

BZX384B56

BZX384B62

BZX384B68

BZX384B75

2.35

2.65

2.94

3.23

3.53

3.82

4.21

4.61

2.4

2.7

3.0

3.3

3.6

3.9

4.3

4.7

5.1

5.6

6.2

6.8

7.5

8.2

9.1

2.45

2.75

3.06

3.37

3.67

3.98

4.39

4.79

5.2

70 (≤ 100)

275

75 (≤ 100) 300 (≤ 600)

80 (≤ 95) 325 (≤ 600)

85 (≤ 95) 350 (≤ 600)

85 (≤ 90) 375 (≤ 600)

85 (≤ 90) 400 (≤ 600)

80 (≤ 90) 410 (≤ 600)

50 (≤ 80) 425 (≤ 500)

40 (≤ 60) 400 (≤ 480)

5.49

6.08

6.66

7.35

8.04

8.92

9.8

5.71

6.32

6.94

7.65

8.36

9.28

10.2

11.2

12.2

13.3

15.3

16.3

18.4

20.4

22.4

24.5

27.5

30.6

33.7

36.7

39.8

43.9

47.9

15 (≤ 40)

6 (≤ 10)

6 (≤ 15)

8 (≤ 20)

10 (≤ 20)

10 (≤ 25)

10 (≤ 30)

80 (≤ 400)

40 (≤ 150)

30 (≤ 80)

0.7

0.5

0.2

0.1

40 (≤ 80)

40 (≤ 100)

50 (≤ 150)

50 (≤ 170)

50 (≤ 200)

50 (≤ 225)

60 (≤ 225)

60 (≤ 250)

65 (≤ 300)

70 (≤ 300)

75 (≤ 325)

80 (≤ 350)

10.8

11.8

12.7

14.7

15.7

17.6

19.6

21.6

23.5

26.5

29.4

32.3

35.3

38.2

42.1

46.1

0.05 0.7 V_Znom.10 (≤ 30)

0.05 0.7 V_Znom.10 (≤ 40)

0.05 0.7 V_Znom.10 (≤ 45)

0.05 0.7 V_Znom.15 (≤ 55)

0.05 0.7 V_Znom.20 (≤ 55)

0.05 0.7 V_Znom.25 (≤ 70)

0.05 0.7 V_Znom.25 (≤ 80)

0.05 0.7 V_Znom.30 (≤ 80)

0.05 0.7 V_Znom.35 (≤ 80)

0.05 0.7 V_Znom.35 (≤ 90)

9.5

0.5

0.05 0.7 V_Znom.40 (≤ 130) 80 (≤ 350)

0.05 0.7 V_Znom.45 (≤ 150) 85 (≤ 375)

0.05 0.7 V_Znom.50 (≤ 170) 85 (≤ 375)

0.05 0.7 V_Znom.60 (≤ 180) 85 (≤ 400)

0.05 0.7 V_Znom.70 (≤ 200) 100 (≤ 425)

0.05 0.7 V_Znom.80 (≤ 215) 100 (≤ 450)

0.05 0.7 V_Znom.90 (≤ 240) 150 (≤ 475)

0.05 0.7 V_Znom.95 (≤ 255) 170 (≤ 500)

54.9

60.8

66.6

73.5

57.1

63.2

69.4

76.5

Rev. 2.2, 03-Nov-16

Document Number: 85764

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BZX384-Series

Vishay Semiconductors

www.vishay.com

TYPICAL CHARACTERISTICS (T_amb= 25 °C, unless otherwise specified)

10³

100

T_J= 25 °C

10²

I_F

r_zj

T_J= 100 °C

10^-1

10^-2

T_J= 25 °C

10^-3

10^-4

10^-5

6.8/8.2

6.2

0.2

0.4

0.6

0.8

0.1

18119

I_Z

5 100 mA

V_F

18114

Fig. 1 - Forward characteristics

Fig. 4 - Dynamic Resistance vs. Zener Current

250

10³

T_j= 25 °C

200

R_zj

47 + 51

P_tot

150

100

10²

100

200 °C

0.1

18192

T_amb

18120

I_Z

Fig. 2 - Admissible Power Dissipation vs.

Ambient Temperature

Fig. 5 - Dynamic Resistance vs. Zener Current

1000

10³

ΔV_Z

T_J= 25 °C

R_zth= R_thAx V_Z

T_j

R_zth

r_zj

10²

100

2.7

3.6

4.7

5.1

negative

positive

5.6

100 V

0.1

18117

5 100 mA

18121

V_Zat I_Z= 5 mA

I_Z

Fig. 3 - Dynamic Resistance vs. Zener Current

Fig. 6 - Thermal Differential Resistance vs. Zener Voltage

Rev. 2.2, 03-Nov-16

Document Number: 85764

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BZX384-Series

Vishay Semiconductors

www.vishay.com

100

V_Zat I_Z= 2 mA

R_zj

ΔV_Z

T = 25 °C

I_Z^j= 5 mA

I_Z= 2 mA

- 1

100 V

20 40 60 80 100 120 140 °C

T_j

18122

18194

V_Z

Fig. 7 - Dynamic Resistance vs. Zener Voltage

Fig. 10 - Change of Zener Voltage vs. Junction Temperature

mV/°C

100

I_Z= 5 mA

ΔV_Z

5 mA

ΔV_Z

1 mA

I_Z

T_j

20 mA

T_j

- 5

100 V

18135

V_Zat I_Z= 5 mA

18195

V_Zat I_Z= 2 mA

≥

27 V, I = 2 mA

Fig. 8 - Temperature Dependence of Zener Voltage vs.

Zener Voltage

Fig. 11 - Temperature Dependence of Zener Voltage vs.

Zener Voltage

0.8

1.6

V_Z= r_zthx I_Z

0.7

V_Zat I_Z= 5 mA

1.4

1.2

I_Z= 5 mA

0.6

0.5

0.4

≥

V_Z27 V; I_Z= 2 mA

ΔV_Z

0.8

0.6

0.3

0.2

0.1

6.2

5.9

0.4

0.2

5.6

5.1

- 1

- 0.2

- 0.4

4.7

3.6

- 0.2

100 120 140 C

T_j

20 40 60 80

100 V

18124

V_Zat I_Z= 5 mA

18196

Fig. 9 - Change of Zener Voltage vs. Junction Temperature

Fig. 12 - Change of Zener Voltage from Turn-on up to the Point of

Thermal Equilibrium vs. Zener Voltage

Rev. 2.2, 03-Nov-16

Document Number: 85764

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BZX384-Series

Vishay Semiconductors

www.vishay.com

_Z= r_zthx I_Z

T_j= 25 °C

l_z

ΔV_Z

I_Z= 5 mA

Test Current I_Z

2 mA

_Z= 2.5 mA

100 V

90 100 V

18191

18160

V_Zat I_Z= 5 mA

V_Z

Fig. 13 - Change of Zener Voltage from Turn-on up to the Point of

Thermal Equilibrium vs. Zener Voltage

Fig. 16 - Breakdown Characteristics

T = 25 °C

3.9

5.6

2.7

6.8

3.3 4.7

8.2

l_Z

Test

current

I_Z5 mA

10 V

18111

Fig. 14 - Breakdown Characteristics

T = 25 °C

Test

current

5 mA

40 V

18112

Fig. 15 - Breakdown Characteristics

Rev. 2.2, 03-Nov-16

Document Number: 85764

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BZX384-Series

Vishay Semiconductors

www.vishay.com

PACKAGE DIMENSIONS in millimeters (inches): SOD-323

0.40 [0.016]

0.25 [0.010]

1.95 [0.077]

1.60 [0.063]

Cathode bar

2.85 [0.112]

2.50 [0.098]

Footprint recommendation:

0.8 [0.031]

1.6 [0.063]

Document no.: S8-V-3910.02-001 (4)

Created - Date: 24.August.2004

Rev. 6 - Date: 23.Sept.2016

17443

Rev. 2.2, 03-Nov-16

Document Number: 85764

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Legal Disclaimer Notice

www.vishay.com

Vishay

Disclaimer



ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,

“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other

disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or

the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all

liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,

consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular

purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of

typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding

statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a

particular product with the properties described in the product specification is suitable for use in a particular application.

Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over

time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s

technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,

including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining

applications or for any other application in which the failure of the Vishay product could result in personal injury or death.

Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.

Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for

such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document

or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Revision: 08-Feb-17

Document Number: 91000

BZX384B6V8-HE3-18相关文章

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深圳市芯福林电子有限公司服务专线: 13418564337 在线联系:

QQ：2881495808 复制

QQ：308365177 复制

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BZX384B6V8-HE3-18产品参数

型号:	BZX384B6V8-HE3-18
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Active
包装说明：	R-PDSO-G2
针数：	2
Reach Compliance Code：	compliant
ECCN代码：	EAR99
HTS代码：	8541.10.00.50
Factory Lead Time：	10 weeks
风险等级：	5.24
配置：	SINGLE
二极管元件材料：	SILICON
二极管类型：	ZENER DIODE
最大动态阻抗：	15 Ω
JESD-30 代码：	R-PDSO-G2
JESD-609代码：	e3
湿度敏感等级：	1
元件数量：	1
端子数量：	2
最高工作温度：	150 °C
最低工作温度：	-55 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性：	UNIDIRECTIONAL
最大功率耗散：	0.2 W
参考标准：	AEC-Q101
标称参考电压：	6.8 V
子类别：	Voltage Reference Diodes
表面贴装：	YES
技术：	ZENER
端子面层：	Matte Tin (Sn)
端子形式：	GULL WING
端子位置：	DUAL
处于峰值回流温度下的最长时间：	10
最大电压容差：	2%
工作测试电流：	5 mA
Base Number Matches：	1

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