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产品型号BZX84C4V7LT1G的概述

芯片BZX84C4V7LT1G的概述 BZX84C4V7LT1G是一种常见的齐纳二极管，其主要功能是提供稳定的电压参考，在电路中广泛应用于电压调节、稳压电源和过压保护等领域。齐纳二极管是一种特殊类型的二极管，允许在反向偏置下工作，且能在某一特定反向电压上维持几乎恒定的电压。BZX84系列是量产较多的齐纳二极管之一，提供了多种电压等级供设计师选择。芯片BZX84C4V7LT1G的详细参数 BZX84C4V7LT1G的主要技术参数包括： - 工作电压：4.7V - 最大反向偏置电压：5.6V - 泄漏电流：最大为5 µA（在25°C时） - 功率耗散：500 mW - 结温范围：-55°C至+150°C - 尺寸：常见的SOT-23封装 - 引脚数量：3个 - 引脚配置：正极、齐纳二极管、负极这些参数使得BZX84C4V7LT1G 在多种应用环境中表现出色，尤其是在需要电压稳定的数字电...

产品型号BZX84C4V7LT1G的Datasheet PDF文件预览

BZX84B4V7LT1,

BZX84C2V4LT1 Series

Zener Voltage Regulators

225 mW SOT−23 Surface Mount

This series of Zener diodes is offered in the convenient, surface

mount plastic SOT−23 package. These devices are designed to provide

voltage regulation with minimum space requirement. They are well

suited for applications such as cellular phones, hand held portables,

and high density PC boards.

http://onsemi.com

Cathode

Anode

Features

• 225 mW Rating on FR−4 or FR−5 Board

• Zener Breakdown Voltage Range − 2.4 V to 75 V

• Package Designed for Optimal Automated Board Assembly

• Small Package Size for High Density Applications

• ESD Rating of Class 3 (>16 KV) per Human Body Model

• Tight Tolerance Series Available (See Page 4)

• Pb−Free Packages are Available

MARKING

DIAGRAM

SOT−23

CASE 318

STYLE 8

xxx M G

Mechanical Characteristics

CASE: Void-free, transfer-molded, thermosetting plastic case

FINISH: Corrosion resistant finish, easily Solderable

MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:

260°C for 10 Seconds

POLARITY: Cathode indicated by polarity band

FLAMMABILITY RATING: UL 94 V−0

xxx

= Device Code

= Date Code*

= Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

ORDERING INFORMATION

MAXIMUM RATINGS

†

Device

BZX84CxxxLT1

Package

Shipping

Rating

Symbol

Max

Unit

SOT−23

3000/Tape & Reel

Total Power Dissipation on FR−5 Board,

(Note 1) @ T = 25°C

Derated above 25°C

225

1.8

556

mW/°C

°C/W

BZX84CxxxLT1G SOT−23

(Pb−Free)

Thermal Resistance, Junction−to−Ambient

BZX84CxxxLT3

SOT−23 10,000/Tape & Reel

Total Power Dissipation on Alumina

BZX84CxxxLT3G SOT−23 10,000/Tape & Reel

(Pb−Free)

Substrate, (Note 2) @ T = 25°C

300

2.4

417

mW/°C

°C/W

Derated above 25°C

Thermal Resistance, Junction−to−Ambient

BZX84BxxxLT1

SOT−23

3000/Tape & Reel

Junction and Storage Temperature Range

T , T

−65 to

+150

°C

stg

BZX84BxxxLT1G SOT−23

(Pb−Free)

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

BZX84BxxxLT3

SOT−23 10,000/Tape & Reel

BZX84BxxxLT3G

SOT−23 10,000/Tape & Reel

(Pb−Free)

1. FR−5 = 1.0 X 0.75 X 0.62 in.

2. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina.

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

DEVICE MARKING INFORMATION

See specific marking information in the device marking

column of the Electrical Characteristics table on page 3 of

this data sheet.

Semiconductor Components Industries, LLC, 2005

Publication Order Number:

October, 2005 − Rev. 11

BZX84C2V4LT1/D

BZX84B4V7LT1, BZX84C2V4LT1 Series

ELECTRICAL CHARACTERISTICS

(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T = 25°C

unless otherwise noted, V = 0.95 V Max. @ I = 10 mA)

Symbol

Parameter

Reverse Zener Voltage @ I

Reverse Current

Maximum Zener Impedance @ I

Reverse Leakage Current @ V

Reverse Voltage

Forward Current

Forward Voltage @ I

Maximum Temperature Coefficient of V

Zener Voltage Regulator

Max. Capacitance @ V = 0 and f = 1 MHz

http://onsemi.com

BZX84B4V7LT1, BZX84C2V4LT1 Series

ELECTRICAL CHARACTERISTICS − BZX84CxxxLT1 SERIES (STANDARD TOLERANCE)

(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T = 25°C unless otherwise noted, V = 0.90 V Max. @ I = 10 mA)

(Devices listed in bold, italic are ON Semiconductor Preferred devices.)

@ I

(Note 3)

(Volts)

(V)

= 1 mA

(V)

= 20 mA

Max Reverse

Leakage

Current

= 5 mA

@ I

(mV/k)

@ I = 5 mA

ZT1

ZT2

(Note 3)

ZT3

(Note 3)

ZT3

ZT1

ZT2

(W)

@ I =

ZT3

20 mA

C (pF)

@ V = 0

f = 1 MHz

Volts

Device

@ I

ZT1

ZT2

Min

Nom

2.4

2.7

Max

2.6

Min

1.7

Max

2.1

2.4

2.7

2.9

3.3

3.5

Min

Max

3.2

Min

Max

Device*

Marking

5 mA

1 mA

BZX84C2V4LT1, G

BZX84C2V7LT1, G

BZX84C3V0LT1, G

BZX84C3V3LT1, G

BZX84C3V6LT1, G

BZX84C3V9LT1, G

BZX84C4V3LT1, G

BZX84C4V7LT1, G

BZX84C5V1LT1, G

BZX84C5V6LT1, G

BZX84C6V2LT1, G

BZX84C6V8LT1, G

BZX84C7V5LT1, G

BZX84C8V2LT1, G

BZX84C9V1LT1, G

BZX84C10LT1, G

BZX84C11LT1, G

BZX84C12LT1, G

BZX84C13LT1, G

BZX84C15LT1, G

BZX84C16LT1, G

BZX84C18LT1, G

BZX84C20LT1, G

BZX84C22LT1, G

BZX84C24LT1, G

Z11

Z12

Z13

Z14

Z15

Z16

2.2

2.5

100

600

500

480

400

150

2.6

−3.5

−2.7

−2.0

0.4

450

2.9

1.9

3.6

450

260

225

200

185

155

140

135

130

120

110

105

100

2.8

3.2

2.1

3.3

3.6

3.9

4.1

4.4

4.5

3.9

3.1

3.3

3.6

3.9

4.3

4.7

5.1

5.6

6.2

6.8

7.5

8.2

9.1

3.5

2.3

4.2

3.4

3.8

2.7

4.5

3.7

4.1

2.9

4.7

−2.5

4.6

3.3

5.1

4.4

3.7

4.7

5.3

5.4

0.2

1.2

2.5

3.7

4.5

5.3

6.2

7.0

8.0

9.0

10.0

11.0

13.0

14.0

16.0

18.0

20.0

22.0

4.8

5.4

4.2

5.9

5.2

4.8

5.2

5.8

6.4

6.3

5.8

6.6

5.6

6.6

7.2

7.9

8.7

9.6

10.6

11.6

12.7

6.8

6.4

7.2

6.3

7.4

1.2

7.9

6.9

2.5

7.7

8.7

7.6

7.7

8.5

9.4

10.4

11.4

12.5

13.9

15.4

16.9

18.9

20.9

22.9

8.8

0.7

0.5

0.2

0.1

0.05

3.2

8.5

9.6

8.4

100

150

170

200

225

250

9.7

3.8

9.4

10.6

11.6

12.7

14.1

15.6

17.1

19.1

21.2

23.3

25.6

9.3

10.7

11.8

12.9

14.2

15.7

17.2

19.2

21.4

23.4

25.7

4.5

10.4

11.4

12.4

13.8

15.3

16.8

18.8

20.8

22.8

10.2

11.2

12.3

13.7

15.2

16.7

18.7

20.7

22.7

5.4

6.0

7.0

15.5

10.5

11.2

12.6

15.4

16.8

9.2

10.4

12.4

14.4

16.4

18.4

21.1

23.2

25.5

Below

= 0.1 m-

Max Reverse

Leakage

Current

(mV/k) Below

@ I = 2 mA

ZT1

@ I

Below

@ I

V Below

ZT2

= 2 mA

@ I

= 10 mA

ZT1

ZT2

ZT3

ZT1

ZT3

Below

C (pF)

Device

Marking

@ I

2 mA

@ I

0.5 mA

@ I

10 mA

@ V = 0

f = 1 MHz

ZT1

ZT4

ZT3

Min

Nom

Max

28.9

Min

Max

28.9

Min

Max

29.3

32.4

35.4

38.4

41.5

46.5

50.5

54.6

60.8

(V)

18.9

Min

Max

25.3

29.4

33.4

37.4

41.2

46.6

51.8

57.2

63.8

71.6

79.8

88.6

Device

BZX84C27LT1, G

BZX84C30LT1, G

BZX84C33LT1, G

BZX84C36LT1, G

BZX84C39LT1, G

BZX84C43LT1, G

BZX84C47LT1, G

BZX84C51LT1, G

BZX84C56LT1, G

BZX84C62LT1, G

BZX84C68LT1, G

BZX84C75LT1, G

Y10

Y11

Y12

Y13

Y14

Y15

Y16

Y17

Y18

Y19

Y20

Y21

25.1

300

325

350

375

400

425

450

475

500

25.2

28.1

31.1

34.1

37.1

40.1

44.1

48.1

52.1

58.2

64.2

70.3

0.05

21.4

24.4

27.4

30.4

33.4

37.6

42.0

46.6

52.2

58.8

65.6

73.4

27.8

30.8

33.8

36.7

39.7

43.7

47.6

51.5

57.4

63.4

69.4

23.1

25.2

27.3

30.1

32.9

35.7

39.2

43.4

47.6

52.5

130

150

170

180

200

215

240

255

100

110

120

130

140

73.2

80.2

3. Zener voltage is measured with a pulse test current I at an ambient temperature of 25°C.

* The “G” suffix indicates Pb−Free package available.

http://onsemi.com

BZX84B4V7LT1, BZX84C2V4LT1 Series

ELECTRICAL CHARACTERISTICS − BZX84BxxxL (Tight Tolerance Series)

(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T = 25°C unless otherwise noted, V = 0.90 V Max. @ I = 10 mA)

Max Reverse

Leakage

(W) @

Current

= 5 mA

(Volts) @ I

= 5 mA

(mV/k)

@ I = 5 mA

C (pF)

(Note 4)

Nom

4.7

(Note 4)

Max

@ V =0,

Device

Min

4.61

5.00

5.49

6.08

6.66

7.35

8.04

8.92

15.7

17.6

Max

4.79

5.20

5.71

6.32

6.94

7.65

8.36

9.28

16.3

18.4

Volts

Min

Max

0.2

1.2

2.5

3.7

4.5

5.3

6.2

f = 1 MHz

260

Marking

Device

BZX84B4V7LT1, G

BZX84B5V1LT1, G

BZX84B5V6LT1, G

BZX84B6V2LT1, G

BZX84B6V8LT1, G

BZX84B7V5LT1, G

BZX84B8V2LT1, G

BZX84B9V1LT1, G

BZX84B16LT1, G

BZX84B18LT1, G

T10

T11

T12

T13

T14

T15

T16

T17

T19

T20

−3.5

−2.7

−2

5.1

225

5.6

200

6.2

0.4

185

6.8

1.2

155

7.5

2.5

140

8.2

0.7

0.5

3.2

135

9.1

3.8

130

0.05

11.2

12.6

10.4

12.4

105

100

4. Zener voltage is measured with a pulse test current I at an ambient temperature of 25°C.

* The “G” suffix indicates Pb−Free package available.

http://onsemi.com

−

BZX84B4V7LT1, BZX84C2V4LT1 Series

TYPICAL CHARACTERISTICS

100

TYPICAL T VALUES

V @ I

−1

100

V , NOMINAL ZENER VOLTAGE (V)

Figure 1. Temperature Coefficients

Figure 2. Temperature Coefficients

(Temperature Range −55°C to +150°C)

1000

100

1000

100

T = 25°C

75 V (MMBZ5267BLT1)

91 V (MMBZ5270BLT1)

Z(AC)

f = 1 kHz

= 0.1 I

Z(DC)

I = 1 mA

5 mA

20 mA

75°C 25°C

0.6 0.7

0°C

150°C

0.5

0.4

V , NOMINAL ZENER VOLTAGE

100

0.8

0.9

1.0

1.1

1.2

V , FORWARD VOLTAGE (V)

Figure 3. Effect of Zener Voltage on

Zener Impedance

Figure 4. Typical Forward Voltage

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BZX84B4V7LT1, BZX84C2V4LT1 Series

TYPICAL CHARACTERISTICS

1000

100

1000

T = 25°C

100

0 V BIAS

1 V BIAS

+150°C

BIAS AT

50% OF V NOM

0.1

0.01

+ꢀ25 °C

−ꢀ55°C

0.001

0.0001

0.00001

100

V , NOMINAL ZENER VOLTAGE (V)

Figure 5. Typical Capacitance

Figure 6. Typical Leakage Current

100

T = 25°C

0.1

0.01

0.1

0.01

V , ZENER VOLTAGE (V)

Figure 8. Zener Voltage versus Zener Current

(12 V to 91 V)

Figure 7. Zener Voltage versus Zener Current

(V_ZUp to 12 V)

http://onsemi.com

BZX84B4V7LT1, BZX84C2V4LT1 Series

PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AN

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

SEE VIEW C

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH THICKNESS. MINIMUM LEAD

THICKNESS IS THE MINIMUM THICKNESS OF

BASE MATERIAL.

4. 318−01 THRU −07 AND −09 OBSOLETE, NEW

STANDARD 318−08.

MILLIMETERS

INCHES

DIM

MIN

0.89

0.01

0.37

0.09

2.80

1.20

1.78

0.10

0.35

NOM

1.00

0.06

0.44

0.13

2.90

1.30

1.90

0.20

0.54

MAX

MIN

NOM

0.040

0.002

0.018

0.005

0.114

0.051

0.075

0.008

0.021

MAX

0.044

0.004

0.020

0.007

0.120

0.055

0.081

0.012

0.029

0.25

1.11

0.10

0.50

0.18

3.04

1.40

2.04

0.30

0.69

0.035

0.001

0.015

0.003

0.110

0.047

0.070

0.004

0.014

VIEW C

2.10

2.40

2.64

0.083

0.094

0.104

STYLE 8:

PIN 1. ANODE

2. NO CONNECTION

3. CATHODE

SOLDERING FOOTPRINT*

0.95

0.037

0.95

0.037

2.0

0.079

0.9

0.035

0.8

0.031

inches

SCALE 10:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

ON Semiconductor Website: http://onsemi.com

Order Literature: http://www.onsemi.com/litorder

Literature Distribution Center for ON Semiconductor

P.O. Box 61312, Phoenix, Arizona 85082−1312 USA

Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada

Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

Japan: ON Semiconductor, Japan Customer Focus Center

2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051

Phone: 81−3−5773−3850

For additional information, please contact your

local Sales Representative.

BZX84C2V4LT1/D

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BZX84C4V7LT1G相关文章

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BZX84C4V7LT1G产品参数

型号:	BZX84C4V7LT1G
Brand Name：	ON Semiconductor
是否无铅：	不含铅
生命周期：	Active
IHS 制造商：	ON SEMICONDUCTOR
零件包装代码：	SOT-23
包装说明：	R-PDSO-G3
针数：	3
制造商包装代码：	318-08
Reach Compliance Code：	compliant
ECCN代码：	EAR99
HTS代码：	8541.10.00.50
Factory Lead Time：	1 week
风险等级：	0.61
Samacsys Confidence：	2
Samacsys Status：	Released
Samacsys PartID：	274256
Samacsys Pin Count：	3
Samacsys Part Category：	Zener Diode
Samacsys Package Category：	SOT23 (3-Pin)
Samacsys Footprint Name：	SOT-23 (TO-236) CASE 318-08
Samacsys Released Date：	2017-05-04 08:31:21
Is Samacsys：	N
其他特性：	UL RECOGNIZED
配置：	SINGLE
二极管元件材料：	SILICON
二极管类型：	ZENER DIODE
最大动态阻抗：	80 Ω
JEDEC-95代码：	TO-236AB
JESD-30 代码：	R-PDSO-G3
JESD-609代码：	e3
湿度敏感等级：	1
元件数量：	1
端子数量：	3
最高工作温度：	150 °C
最低工作温度：	-65 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性：	UNIDIRECTIONAL
最大功率耗散：	0.25 W
认证状态：	Not Qualified
标称参考电压：	4.7 V
子类别：	Voltage Reference Diodes
表面贴装：	YES
技术：	ZENER
端子面层：	Tin (Sn)
端子形式：	GULL WING
端子位置：	DUAL
处于峰值回流温度下的最长时间：	40
最大电压容差：	6.38%
工作测试电流：	5 mA
Base Number Matches：	1

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