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产品型号BZX99-C2V4的Datasheet PDF文件预览

DISCRETE SEMICONDUCTORS  
DATA SHEET  
book, halfpage  
BZX99 series  
Voltage regulator diodes  
Product specification  
1999 Oct 20  
Supersedes data of 1999 May 31  
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
BZX99 series  
FEATURES  
PINNING  
PIN  
Total power dissipation: max. 300 mW  
Tolerance: ±5%  
DESCRIPTION  
1
2
3
anode  
Working voltage range: nom. 2.4 to 15 V (E24 range)  
not connected  
cathode  
Improved Iz/Vz characteristics at low currents  
(Iz = 50 µA). This results in a noise free and sharp  
breakdown knee.  
APPLICATIONS  
handbook, age  
2
1
General regulation functions, where low noise at low  
currents is required  
Low-power consumption applications (e.g. hand-held  
applications).  
2
n.c.  
1
3
DESCRIPTION  
3
Low-power low noise voltage regulator diodes in small  
SOT23 plastic SMD packages.  
Top view  
MAM243  
The diodes are available in the normalized E24 ±5%  
tolerance range. The series consists of 20 types with  
nominal working voltages from 2.4 to 15 V.  
Fig.1 Simplified outline (SOT23) and symbol.  
MARKING  
TYPE  
NUMBER  
MARKING  
CODE  
TYPE  
NUMBER  
MARKING  
CODE  
TYPE  
NUMBER  
MARKING  
CODE  
TYPE  
NUMBER  
MARKING  
CODE  
BZX99-C2V4  
BZX99-C2V7  
BZX99-C3V0  
BZX99-C3V3  
BZX99-C3V6  
XL  
XM  
XN  
XP  
XR  
BZX99-C3V9  
BZX99-C4V3  
BZX99-C4V7  
BZX99-C5V1  
BZX99-C5V6  
XS  
XT  
XA  
XB  
XC  
BZX99-C6V2  
BZX99-C6V8  
BZX99-C7V5  
BZX99-C8V2  
BZX99-C9V1  
XD  
XE  
XU  
XV  
XW  
BZX99-C10  
BZX99-C11  
BZX99-C12  
BZX99-C13  
BZX99-C15  
XX  
XY  
XZ  
X2  
X3  
1999 Oct 20  
2
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
BZX99 series  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 134).  
SYMBOL  
IF  
PARAMETER  
CONDITIONS  
MIN.  
MAX.  
300  
see Table 1  
UNIT  
mA  
continuous forward current  
IZSM  
non-repetitive peak reverse current tp = 100 µs; square wave;  
Tamb = 25 °C prior to surge  
Ptot  
Tstg  
Tj  
total power dissipation  
storage temperature  
junction temperature  
Tamb = 25 °C; note 1  
300  
+150  
150  
mW  
°C  
65  
°C  
Note  
1. Device mounted on an FR4 printed-circuit board.  
ELECTRICAL CHARACTERISTICS  
Total BZX99-C series  
Tj = 25 °C unless otherwise specified.  
SYMBOL  
VF  
PARAMETER  
forward voltage  
CONDITIONS  
MAX.  
UNIT  
IF = 10 mA; see Fig.4  
IF = 100 mA; see Fig.4  
0.9  
1
V
V
IR  
reverse current  
BZX99-C2V4  
BZX99-C2V7  
BZX99-C3V0  
BZX99-C3V3  
BZX99-C3V6  
BZX99-C3V9  
BZX99-C4V3  
BZX99-C4V7  
BZX99-C5V1  
BZX99-C5V6  
BZX99-C6V2  
BZX99-C6V8  
BZX99-C7V5  
BZX99-C8V2  
BZX99-C9V1  
BZX99-C10  
VR = 1 V  
VR = 1 V  
VR = 1 V  
VR = 2 V  
VR = 2 V  
VR = 2 V  
VR = 2 V  
VR = 3 V  
VR = 3 V  
VR = 4 V  
VR = 5 V  
VR = 5 V  
VR = 5 V  
VR = 6 V  
VR = 7 V  
VR = 7 V  
VR = 8 V  
VR = 9 V  
VR = 10 V  
VR = 10.5 V  
0.2  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
0.05  
0.02  
2
1
0.5  
0.1  
2
1
1
0.1  
0.01  
0.1  
0.2  
0.1  
0.1  
0.05  
0.05  
0.05  
0.01  
BZX99-C11  
BZX99-C12  
BZX99-C13  
BZX99-C15  
1999 Oct 20  
3
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
BZX99 series  
Table 1 Per type BZX99-C2V4 to C15  
Tj = 25 °C unless otherwise specified.  
WORKING VOLTAGE  
VZ (V)  
VOLTAGE  
CHANGE  
VZ(V)(1)  
TEMP. COEFF.  
SZ (mV/K)  
IZtest = 50 µA  
DIODE CAP. NON-REPETITIVE PEAK  
Cd (pF)  
at f = 1 MHz;  
VR = 0 V  
REVERSE CURRENT  
ZSM (A)  
at tp = 100 µs;  
at IZ = 50 µA  
I
BZX99-C  
(see Figs 2 and 3)  
XXX  
Tol. ±5%  
Tamb = 25 °C  
MIN.  
2.28  
MAX.  
2.52  
MAX.  
TYP.  
MAX.  
MAX.  
2V4  
2V7  
3V0  
3V3  
3V6  
3V9  
4V3  
4V7  
5V1  
5V6  
6V2  
6V8  
7V5  
8V2  
9V1  
10  
0.80  
0.85  
0.90  
0.93  
0.95  
0.97  
0.99  
0.97  
0.60  
0.20  
0.10  
0.10  
0.15  
0.15  
0.10  
0.10  
0.11  
0.12  
0.13  
0.15  
1.15  
1.35  
1.50  
1.65  
1.80  
1.95  
2.05  
1.90  
0.15  
1.75  
370  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
5.0  
4.0  
3.0  
3.0  
3.0  
3.0  
3.0  
3.0  
2.5  
2.5  
2.5  
2.0  
2.57  
2.85  
3.14  
3.42  
3.71  
4.09  
4.47  
4.85  
5.32  
5.89  
6.46  
7.13  
7.79  
8.65  
9.50  
10.45  
11.40  
12.35  
14.25  
2.84  
3.15  
3.47  
3.78  
4.10  
4.52  
4.94  
5.36  
5.88  
6.51  
7.14  
7.88  
8.61  
9.56  
10.50  
11.55  
12.60  
13.65  
15.75  
350  
325  
310  
300  
290  
280  
275  
300  
275  
250  
215  
170  
150  
120  
110  
110  
105  
105  
100  
2.35  
3.00  
3.60  
4.25  
5.00  
5.80  
11  
6.70  
12  
7.65  
13  
8.60  
15  
10.50  
Note  
1. VZ = VZ at 100 µA minus VZ at 10 µA  
THERMAL CHARACTERISTICS  
SYMBOL  
Rth j-a  
PARAMETER  
CONDITIONS  
note 1  
VALUE  
UNIT  
thermal resistance from junction to ambient  
415  
195  
K/W  
K/W  
Rth j-s  
thermal resistance from junction to solderpoint note 2  
Notes  
1. Device mounted on an FR4 printed-circuit board.  
2. Solderpoint of cathode tab.  
1999 Oct 20  
4
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
BZX99 series  
GRAPHICAL DATA  
MGL741  
0
S
z
(mV/K)  
0.5  
C2V4  
1  
C3V0  
C3V3  
1.5  
C3V6  
C3V9  
2  
C4V3  
C4V7  
2.5  
2
3
10  
10  
10  
I
(µA)  
z
Tj = 25 to 150 °C.  
Fig.2 Temperature coefficient as a function of working current; typical values.  
MGL742  
MBG781  
12  
300  
handbook, halfpage  
handbook, halfpage  
C15  
S
z
I
F
(mV/K)  
(mA)  
8
C12  
C10  
200  
C8V2  
C6V8  
4
0
C6V2  
C5V6  
100  
C5V1  
4  
10  
0
0.6  
2
3
10  
10  
0.8  
1.0  
I
(µA)  
V (V)  
F
z
Tj = 25 to 150 °C.  
Tj = 25 °C.  
Fig.3 Temperature coefficient as a function of  
working current; typical values.  
Fig.4 Forward current as a function of forward  
voltage; typical values.  
1999 Oct 20  
5
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
BZX99 series  
PACKAGE OUTLINE  
Plastic surface mounted package; 3 leads  
SOT23  
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M  
B
L
p
e
detail X  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
1
UNIT  
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.  
1.1  
0.9  
0.48  
0.38  
0.15  
0.09  
3.0  
2.8  
1.4  
1.2  
2.5  
2.1  
0.45  
0.15  
0.55  
0.45  
mm  
0.1  
1.9  
0.95  
0.2  
0.1  
REFERENCES  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
JEDEC  
EIAJ  
97-02-28  
99-09-13  
SOT23  
TO-236AB  
1999 Oct 20  
6
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
BZX99 series  
DEFINITIONS  
Data sheet status  
Objective specification  
Preliminary specification  
Product specification  
This data sheet contains target or goal specifications for product development.  
This data sheet contains preliminary data; supplementary data may be published later.  
This data sheet contains final product specifications.  
Limiting values  
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
improper use or sale.  
1999 Oct 20  
7
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For all other countries apply to: Philips Semiconductors,  
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68  
SCA  
© Philips Electronics N.V. 1999  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
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Printed in The Netherlands  
115002/02/pp8  
Date of release: 1999 Oct 20  
Document order number: 9397 750 06464  
配单直通车
BZX99-C2V4产品参数
型号:BZX99-C2V4
生命周期:Obsolete
IHS 制造商:NXP SEMICONDUCTORS
零件包装代码:SOT-23
包装说明:R-PDSO-G3
针数:3
Reach Compliance Code:unknown
ECCN代码:EAR99
HTS代码:8541.10.00.50
风险等级:5.84
其他特性:LOW NOISE
配置:SINGLE
二极管元件材料:SILICON
二极管类型:ZENER DIODE
JESD-30 代码:R-PDSO-G3
元件数量:1
端子数量:3
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:SMALL OUTLINE
极性:UNIDIRECTIONAL
最大功率耗散:0.3 W
认证状态:Not Qualified
标称参考电压:2.4 V
表面贴装:YES
技术:ZENER
端子形式:GULL WING
端子位置:DUAL
最大电压容差:5%
工作测试电流:0.05 mA
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