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产品型号CA3083Z的Datasheet PDF文件预览

CA3083

Data Sheet

February 7, 2006

FN481.6

General Purpose High Current NPN

Transistor Array

Features

• High I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA (Max)

The CA3083 is a versatile array of five high current (to

100mA) NPN transistors on a common monolithic substrate.

In addition, two of these transistors (Q and Q ) are

• Low V

(at 50mA). . . . . . . . . . . . . . . . . . . 0.7V (Max)

CE sat

• Matched Pair (Q and Q )

- V (V Match). . . . . . . . . . . . . . . . . . . . . ±5mV (Max)

matched at low current (i.e., 1mA) for applications in which

offset parameters are of special importance.

IO BE

- I (at 1mA) . . . . . . . . . . . . . . . . . . . . . . . . 2.5µA (Max)

• 5 Independent Transistors Plus Separate Substrate

Connection

Independent connections for each transistor plus a separate

terminal for the substrate permit maximum flexibility in circuit

design.

• Pb-Free Plus Anneal Available (RoHS Compliant)

Ordering Information

Applications

• Signal Processing and Switching Systems Operating from

DC to VHF

TEMP.

PART

RANGE

(°C)

PKG.

NUMBER MARKING

PACKAGE

DWG. #

CA3083 CA3083

-55 to 125 16 Ld PDIP

E16.3

• Lamp and Relay Driver

• Differential Amplifier

CA3083Z

(Note)

CA3083Z -55 to 125 16 Ld PDIP* (Pb-free) E16.3

• Temperature Compensated Amplifier

• Thyristor Firing

CA3083M96 3083

-55 to 125 16 Ld SOIC

Tape and Reel

M16.15

CA3083MZ

(Note)

3083MZ

-55 to 125 16 Ld SOIC (Pb-Free) M16.15

• See Application Note AN5296 “Applications of the

CA3018 Circuit Transistor Array” for Suggested

Applications

CA3083MZ96 3083MZ

(Note)

-55 to 125 16 Ld SOIC (Pb-Free) M16.15

Tape and Reel

*Pb-free PDIPs can be used for through hole wave solder processing

only. They are not intended for use in Reflow solder processing

applications.

NOTE: Intersil Pb-free plus anneal products employ special Pb-free

material sets; molding compounds/die attach materials and 100% matte

tin plate termination finish, which are RoHS compliant and compatible

with both SnPb and Pb-free soldering operations. Intersil Pb-free

products are MSL classified at Pb-free peak reflow temperatures that

meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020.

Pinout

CA3083

(PDIP, SOIC)

TOP VIEW

SUBSTRATE

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.

All other trademarks mentioned are the property of their respective owners.

CA3083

Absolute Maximum Ratings

The following ratings apply for each transistor in the device:

Thermal Information

Thermal Resistance (Typical, Note 2)

PDIP Package . . . . . . . . . . . . . . . . . . .

SOIC Package . . . . . . . . . . . . . . . . . . .

(°C/W)

135

200

(°C/W)

N/A

Collector-to-Emitter Voltage, V

Collector-to-Base Voltage, V

. . . . . . . . . . . . . . . . . . . . . . 15V

. . . . . . . . . . . . . . . . . . . . . . . . 20V

CEO

CBO

Collector-to-Substrate Voltage, V

(Note 1). . . . . . . . . . . . . . 20V

Maximum Power Dissipation (Any One Transistor). . . . . . . 500mW

Maximum Junction Temperature (Plastic Package) . . . . . . . 150°C

Maximum Storage Temperature Range . . . . . . . . . -65°C to 150°C

Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300°C

(SOIC - Lead Tips Only)

CIO

Emitter-to-Base Voltage, V

. . . . . . . . . . . . . . . . . . . . . . . . . . 5V

EBO

Collector Current (I ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA

Base Current (I ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA

Operating Conditions

Temperature Range. . . . . . . . . . . . . . . . . . . . . . . . . .-55°C to 125°C

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTES:

1. The collector of each transistor of the CA3083 is isolated from the substrate by an integral diode. The substrate must be connected to a voltage

which is more negative than any collector voltage in order to maintain isolation between transistors and provide normal transistor action. To

avoid undesired coupling between transistors, the substrate Terminal (5) should be maintained at either DC or signal (AC) ground. A suitable

bypass capacitor can be used to establish a signal ground.

2. θ is measured with the component mounted on an evaluation PC board in free air.

Electrical Specifications For Equipment Design, T = 25°C

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

FOR EACH TRANSISTOR

Collector-to-Base Breakdown Voltage

Collector-to-Emitter Breakdown Voltage

Collector-to-Substrate Breakdown Voltage

Emitter-to-Base Breakdown Voltage

Collector-Cutoff-Current

= 100µA, I = 0

(BR)CBO

(BR)CEO

= 1mA, I = 0

= 100µA, I = 0, I = 0

(BR)CIO

(BR)EBO

= 500µA, I = 0

6.9

= 10V, I = 0

µA

CEO

CBO

Collector-Cutoff-Current

= 10V, I = 0

DC Forward-Current Transfer Ratio (Note 3) (Figure 1)

= 3V

= 10mA

= 50mA

0.65

Base-to-Emitter Voltage (Figure 2)

Collector-to-Emitter Saturation Voltage (Figures 3, 4)

Gain Bandwidth Product

= 3V, I = 10mA

0.74

0.40

450

0.85

0.70

I = 50mA, I = 5mA

C B

CE SAT

= 3V, I = 10mA

MHz

FOR TRANSISTORS Q AND Q (As a Differential Amplifier)

Absolute Input Offset Voltage (Figure 6)

Absolute Input Offset Current (Figure 7)

= 3V, I = 1mA

1.2

0.7

= 3V, I = 1mA

2.5

µA

NOTE:

3. Actual forcing current is via the emitter for this test.

FN481.6

February 7, 2006

CA3083

Typical Performance Curves

100

0.9

0.8

= 3V

= 70°C

= 0°C

= 25°C

0.7

= 0°C

= 70°C

0.6

0.5

0.1

100

0.1

100

COLLECTOR CURRENT (mA)

FIGURE 1. h vs I

FIGURE 2. V

vs I

BE C

1.2

= 10, T = 25 C

= 10, T = 70°C

0.8

0.6

0.4

0.8

0.6

0.4

0.2

MAXIMUM

TYPICAL

0.2

TYPICAL

100

COLLECTOR CURRENT (mA)

100

COLLECTOR CURRENT (mA)

FIGURE 3. V

vs I

FIGURE 4. V

vs I

CE SAT C

CE SAT

0.9

0.8

0.7

0.6

0.5

= 10, T = 25°C

= 3V, T = 25°C

COLLECTOR CURRENT (mA)

100

0.1

COLLECTOR CURRENT (mA)

FIGURE 5. V

vs I

FIGURE 6. V vs I (TRANSISTORS Q AND Q AS A

BE SAT

DIFFERENTIAL AMPLIFIER)

FN481.6

February 7, 2006

CA3083

Typical Performance Curves (Continued)

= 3V, T = 25°C

0.1

COLLECTOR CURRENT (mA)

FIGURE 7. I vs I (TRANSISTORS Q AND Q AS A DIFFERENTIAL AMPLIFIER)

All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.

Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality

Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without

notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and

reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result

from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see www.intersil.com

FN481.6

February 7, 2006

型号:	CA3083Z
是否Rohs认证：	符合
生命周期：	Obsolete
零件包装代码：	DIP
包装说明：	IN-LINE, R-PDIP-T16
针数：	16
Reach Compliance Code：	compliant
ECCN代码：	EAR99
风险等级：	5.7
最大集电极电流 (IC)：	0.1 A
集电极-发射极最大电压：	15 V
配置：	SEPARATE, 5 ELEMENTS
最小直流电流增益 (hFE)：	40
最高频带：	VERY HIGH FREQUENCY BAND
JESD-30 代码：	R-PDIP-T16
JESD-609代码：	e3
元件数量：	5
端子数量：	16
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	IN-LINE
峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.5 W
认证状态：	Not Qualified
子类别：	Other Transistors
表面贴装：	NO
端子面层：	MATTE TIN
端子形式：	THROUGH-HOLE
端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
标称过渡频率 (fT)：	450 MHz
Base Number Matches：	1

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