CM105X5R225K16A中文资料应用文章市场行情现货热卖使用介绍-中国IC网-芯三七

Datasheet

Automotive 0.5A Variable Output

LDO Regulator

BDxxGA5MEFJ-M

●General Description

BDxxGA5MEFJ-M is a LDO regulator with output current 0.5A. The output accuracy is ±1% of output voltage. With external

resistance, it is available to set the output voltage at random (from 1.5V to 13.0V).It has package type: HTSOP-J8. Over

current protection (for protecting the IC destruction by output short circuit), circuit current ON/OFF switch (for setting the

circuit 0μA at shutdown mode), and thermal shutdown circuit (for protecting IC from heat destruction by over load condition)

are all built in. It is usable for ceramic capacitor and enables to improve smaller set and long-life.

●Package

HTSOP-J8

(Typ.)

(Max.)

●Features

High accuracy reference voltage circuit

4.90mm x 6.00mm x 1.00mm

Built-in Over Current Protection circuit (OCP)

Built-in Thermal Shut Down circuit (TSD)

With shut down switch

AEC-Q100 Qualified

●Key Specifications

Input power supply voltage range:

Output voltage range(Variable type):

4.5V to 14.0V

1.5V to 13.0V

Output voltage(Fixed type): 1.5V/1.8V/2.5V/3.0V/3.3V

5.0V/6.0V/7.0V/8.0V/9.0V/10V/12V

Output current:

Shutdown current:

0.5A (Max.)

0μA(Typ.)

Operating temperature range:

-40℃ to +105℃

HTSOP-J8

●Typical Application Circuit

V_CC

EN

V_O

V_CC

EN

V_O

C_OUT

C_IN

R1

R2

V_{O_S}

FB

GND

FIN

GND

FIN

C_IN,C_OUT: Ceramic Capacitor

○Product structure：Silicon monolithic integrated circuit ○This product is not designed protection against radioactive rays.

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BDxxGA5MEFJ-M

●Ordering Information

B D x x G

A

5 M E F J - M E 2

Part

Output

Voltage

resistance current

A5:0.5A

Output

Automotive Package

Packaging and forming specification

Number voltage

“M”：M series

00:Variable G:15V

EFJ:HTSOP-J8 E2:Emboss tape reel

15:1.5V

18:1.8V

25:2.5V

30:3.0V

33:3.3V

50:5.0V

60:6.0V

70:7.0V

80:8.0V

90:9.0V

J0:10.0V

J2:12.0V

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BDxxGA5MEFJ-M

●Block Diagram

BD00GA5MEFJ-M

(VO+0.90) to 14.0V

GND

VCC

8

3

Ceramic

≧ 1.0μF

Capacitor

OCP

SOFT

START

1.5V to 13.0V

Vo

FB

1

2

Ceramic

R1

≧ 1.0μF

Capacitor

EN

R2

TSD

5

Fig.1 Block Diagram

BDxxGA5MEFJ-M (Fixed type)

4.5～14.0V

V_CC

8

Ceramic

≧ 1.0μF

Capacitor

OCP

SOFT

START

V_O

EN

5

1

2

TSD

Ceramic

≧ 1.0μF

Capacitor

GND

3

V_{O_S}

FIN

Fig.2 Block Diagram (Fixed type)

TOP VIEW

●Pin Configuration

V_O

FB/Vo_s

GND

V_CC

N.C.

EN

N.C.

●Pin Description

Pin No.

Pin name

V_O

Pin Function

1

Output pin

Feedback pin

GND pin

2

FB/Vo_s

GND

N.C.

3

4

Non Connection (Used to connect GND or OPEN state.)

Enable pin

5

EN

6

N.C.

Non Connection (Used to connect GND or OPEN state.)

Input pin

7

8

N.C.

V_CC

Reverse

FIN

Substrate(Connect to GND)

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BDxxGA5MEFJ-M

●Absolute Maximum Ratings (Ta=25℃)

Parameter

Symbol

V_CC

Limits

15.0 *¹

Unit

V

Power supply voltage

EN voltage

V_EN

15.0

V

Power dissipation

HTSOP-J8

Pd^*2

2110 ^*2

mW

℃

Operating Temperature Range

Storage Temperature Range

Topr

Tstg

-40 to +105

-55 to +150

+150

℃

Junction Temperature

Tjmax

℃

*1 Not to exceed Pd

*2 Reduced by 16.9mW/℃ for each increase in Ta of 1℃ over 25℃. (when mounted on a board 70mm×70mm×1.6mm glass-epoxy board, two layer)

●Recommended Operating Ratings (Ta=25℃)

Parameter

Input power supply voltage

EN voltage

Symbol

V_CC

V_EN

V_O

Min.

4.5

0.0

1.5

0.0

Max.

14.0

13.0

0.5

Unit

V

Output voltage setting range

Output current

V

I_O

A

●Electrical Characteristics (Unless otherwise noted, EN=3V, Vcc=6V, R1=43kΩ, R2=8.2kΩ)

Parameter

Circuit current at shutdown

mode

Symbol

Temp

25℃

Min.

Typ.

Max.

5

Unit

Conditions

-

0

I_SD

μA V_EN=0V, OFF mode

μA

-40~105℃

25℃

-

5

-

600

900

1200

50

Bias current

I_CC

Reg.I

Reg I_O

V_CO

-40~105℃

25℃

-

25

Line regulation

mV V_CC=( Vo+0.9V )→14.0V

mV I_O=0→0.5A

-40~105℃

25℃

-

50

-

25

75

Load regulation

Minimum dropout Voltage

-40~105℃

25℃

-

75

-

0.6

0.9

V

V_CC=5V, I_O=0.5A

I_O=0mA

-40~105℃

25℃

-

1.2

Output reference voltage

(Variable type)

0.792

0.776

V_O×0.99

0.800

0.808

0.824

V_O×1.01

VO×1.03

0.8

V_FB

-40~105℃

25℃

-

V_O

VO

-

Output voltage(Fixed type)

EN Low voltage

V_O

V

I_O=0mA

-40~105℃ VO×0.97

25℃

-40~105℃

25℃

0

V_EN(Low)

V_EN(High)

I_EN

V

-

0.8

2.4

1

-

14.0

9

EN High voltage

V

-40~105℃

25℃

-

3

EN Bias current

µA

-40~105℃

-

9

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BDxxGA5MEFJ-M

●Typical Performance Curves

(Unless otherwise noted, EN=3V, V_CC=6V, R1=43kΩ, R2=8.2kΩ)

V_O

50mV/div

I_O

0.5A/div

Fig.4

10usec/div

Fig.4

10usec/div

Fig.4

Fig.3

Transient Response

(0→0.5A)

Co=1µF, Ta=25°C

Co=1µF, Ta=-40°C

V_O

50mV/div

V_O

50mV/div

I_O

0.5A/div

Fig.4

10usec/div

2msec/div

0.5A/div

Fig.4

10usec/div

Fig.6

Fig.5

Transient Response

(0.5→0A)

(0→0.5A)

Co=1µF, Ta=-40°C

Co=1µF, Ta=105°C

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BDxxGA5MEFJ-M

V_O

50mV/div

V_O

50mV/div

I_O

0.5A/div

Fig.4

10usec/div

2msec/div

0.5A/div

Fig.4

10usec/div

2msec/div

Fig.8

Fig.7

Transient Response

(0.5→0A)

Co=1µF, Ta=105°C

Co=1µF, Ta=25°C

V_EN

2V/div

V_CC

5V/div

V_O

5V/div

Fig.4

10usec/div

1msec/div

5V/div

Fig.4

10usec/div

1msec/div

Fig.10

Fig.9

Input sequence 1

Co=1µF, Ta=25°C

Input sequence 1

Co=1µF, Ta=-40°C

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BDxxGA5MEFJ-M

V_EN

2V/div

V_CC

5V/div

V_O

5V/div

Fig.4

10usec/div

1msec/div

5V/div

Fig.4

10usec/div

40msec/div

Fig.11

Input sequence 1

Co=1µF, Ta=105°C

Fig.12

OFF sequence 1

Co=1µF, Ta=-40°C

V_EN

2V/div

V_CC

5V/div

V_O

5V/div

Fig.4

10usec/div

40msec/div

5V/div

Fig.4

10usec/div

40msec/div

Fig.13

Fig.14

OFF sequence 1

Co=1µF, Ta=25°C

OFF sequence 1

Co=1µF, Ta=105°C

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BDxxGA5MEFJ-M

V_EN

2V/div

V_CC

5V/div

V_O

5V/div

Fig.4

10usec/div

1msec/div

5V/div

Fig.4

10usec/div

1msec/div

Fig.15

Input sequence 2

Co=1µF, Ta=-40°C

Fig.16

Input sequence 2

Co=1µF, Ta=25°C

V_EN

2V/div

V_CC

5V/div

V_O

5V/div

Fig.4

10usec/div

1msec/div

5V/div

Fig.4

10usec/div

40msec/div

Fig.17

Fig.18

Input sequence 2

Co=1µF, Ta=105°C

OFF sequence 2

Co=1µF, Ta=-40°C

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BDxxGA5MEFJ-M

V_EN

2V/div

V_EN

2V/div

V_CC

5V/div

V_CC

5V/div

V_O

5V/div

Fig.4

10usec/div

40msec/div

5V/div

Fig.4

10usec/div

40msec/div

Fig.20

OFF sequence 2

Co=1µF, Ta=105°C

Fig.19

OFF sequence 2

Co=1µF, Ta=25°C

900

800

5.2

5.1

5.0

4.9

4.8

800

700

600

500

400

-40

-25

85

75 85

-15

10

35

25

60

50

85

-40

-15

10

35

60

85

105

0

Ta[℃]

Ta [°C]

Fig.8

Ta [°C]

Fig.9

Ta-I_CC

Ta-V_O(I_O=0mA)

Fig. 22

Ta-Icc

Fig. 21

Ta-Vo (I_O=0mA)

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BDxxGA5MEFJ-M

8.0

40

1.0

0.8

6.0

30

0.6

4.200

0.4

10

2.0

0.2

0.00.0

-4-025

0

0.0

85

85 75

105

85

75

85 105

-15 0 10

2535

6500

-25

-40

0

25

35

50

60

-15

10

Ta[℃]

Ta [°C]

Ta [°C ]

Ta[°C]

Ta [°C]

Fig.10

Fig. 24

Fig.11

Fig. 23

Ta-I_SD

Ta-I

Fig. _E2_N4

Ta-I_SD

(V_EN=0V)

Ta-I_EN

(V_EN=0V)

5.0

4.0

3.0

2.0

1.0

0.0

– Temp=-40°C

– Temp=25°C

– Temp=105°C

0

2

4

6

8

10

12

14

V_CC[V]

CC

I_O[A]

V [V]

V_CC[V]

Fig. 25

I_O-V_O

Fig. 26

_CC-I_SD

(V_EN=0V)

V

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BDxxGA5MEFJ-M

6.0

4.0

2.0

0.0

– Temp=-40°C

– Temp=25°C

– Temp=105°C

0

2

4

6

8

10

12

14

V_CC[V]

Vcc [V]

Ta[℃]

Fig. 27

_CC-V_O(I_O=0mA)

Fig. 28

TSD (I_O=0mA)

V

6.0

5.0

4.0

3.0

2.0

1.0

0.0

900

800

700

600

500

400

– Temp=-40°C

– Temp=25°C

– Temp=105°C

– Temp=-40°C

– Temp=25°C

– Temp=105°C

0

0.3

0.6

0.9

1.2

1.5

0

0.1

0.2

0.3

0.4

0.5

I [A]

I_O[A]

TIao[℃[A]]

Io [A]

I_O^O[A]

Fig. 29

OCP

Fig. 30

I_O-I_CC

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BDxxGA5MEFJ-M

10.00

1.00

Safety Area

0.10

0.01

0

0.1

0.2

0.3

0.4

0.5

I [A]

Io [A]

O

Fig. 31

ESR safety area

Fig. 32

PSRR (I_O=0mA)

0.6

0.5

0.4

0.3

0.2

0.1

0.0

0.6

0.5

0.4

0.3

0.2

– Temp=-40°C

– Temp=25°C

– Temp=105°C

-40

-15

10

35

60

85

105

0

0.1

0.2

0.3

0.4

0.5

Ta [°C]

Ta[°C]

I_O[A]

Io[A]

I_O[A]

Fig. 33

Ta-Vdrop

（V_CC=6V, I_O=0.5A）

Fig. 34

Minimum dropout Voltage 1

（V_CC=4.5V）

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BDxxGA5MEFJ-M

0.6

0.5

0.4

0.3

0.2

0.1

0.0

0.6

– Temp=-40°C

– Temp=25°C

– Temp=105°C

– Temp=-40°C

– Temp=25°C

– Temp=105°C

0.5

0.4

0.3

0.2

0.1

0.0

0

0.1

0.2

0.3

0.4

0.5

0

0.1

0.2

0.3

0.4

0.5

I_O[A]

Io[A]

I

o[A]

I_O[A]

Fig. 36

Minimum dropout Voltage 3

Fig. 35

Minimum dropout Voltage 2

（V_CC=8.0V）

（V_CC=6.0V）

0.6

0.5

0.4

0.3

0.2

0.1

0.0

0.6

0.5

0.4

0.3

0.2

0.1

0.0

– Temp=-40°C

– Temp=25°C

– Temp=105°C

– Temp=-40°C

– Temp=25°C

– Temp=105°C

0

0.1

0.2

0.3

0.4

0.5

0

0.1

0.2

0.3

0.4

0.5

I_O[A]

I [A]

Io[A]

O

I [A]

Io[A]

O

Fig. 37

Minimum dropout Voltage 4

Fig. 38

Minimum dropout Voltage 5

（V_CC=10.0V）

（V_CC=12.0V）

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BDxxGA5MEFJ-M

●Power Dissipation

◎HTSOP-J8

4.0

⑤3.76W

Measure condition: mounted on a ROHM board,

and IC

Substrate size: 70mm × 70mm × 1.6mm

(Substrate with thermal via)

3.0

・ Solder the substrate and package reverse

exposure heat radiation part

④2.11W

① IC only

2.0

θj-a=249.5℃/W

② 1-layer（copper foil are :0mm×0mm）

θj-a=153.2℃/W

③ 2-layer（copper foil are :15mm×15mm）

θj-a=113.6℃/W

③1.10W

1.0

②0.82W

④ 2-layer（copper foil are :70mm×70mm）

θj-a=59.2℃/W

①0.50W

⑤ 4-layer（copper foil are :70mm×70mm）

θj-a=33.3℃/W

0

25

50

75

100

125

150

Ambient_周Te_囲m_温p_度e_:r_Ta_atu_[℃re_]:Ta [℃]

Thermal design should allow operation within the following conditions. Note that the temperatures listed are the allowed

temperature limits, and thermal design should allow sufficient margin from the limits.

1. Ambient temperature Ta can be no higher than 105℃.

2. Chip junction temperature (Tj) can be no higher than 150℃.

Chip junction temperature can be determined as follows:

Calculation based on ambient temperature (Ta)

Tj=Ta+θj-a×W

＜Reference values＞

1-layer substrate (copper foil density 0mm×0mm)

2-layer substrate (copper foil density 15mm×15mm)

2-layer substrate (copper foil density 70mm×70mm)

4-layer substrate (copper foil density 70mm×70mm)

θj-a: HTSOP-J8 153.2℃/W

113.6℃/W

59.2℃/W

33.3℃/W

Substrate size: 70mm×70mm×1.6mm (substrate with thermal via)

Most of the heat loss that occurs in the BDxxGA5MEFJ-M is generated from the output Pch FET. Power loss is determined

by the total V_CC-V_Ovoltage and output current. Be sure to confirm the system input and output voltage and the output

current conditions in relation to the heat dissipation characteristics of the V_CCand V_Oin the design. Bearing in mind that

heat dissipation may vary substantially depending on the substrate employed (due to the power package incorporated in

the BDxxGA5MEFJ-M make certain to factor conditions such as substrate size into the thermal design.

Power consumption[W] = Input voltage (V_CC) - Output voltage (V_O) ×I_O(Ave)

Example) Where V_CC=5.0V, V_O=3.3V, I_O(Ave) = 0.1A,

Power consumption[W] = 5.0V - 3.3V ×0.1A

=0.17W

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BDxxGA5MEFJ-M

●Input-to-Output Capacitor

It is recommended that a capacitor is placed nearby pin between Input pin and GND, output pin and GND.

A capacitor, between input pin and GND, is valid when the power supply impedance is high or drawing is long. Also as for

a capacitor, between output pin and GND, the greater the capacity, more sustainable the line regulation and it makes

improvement of characteristics by load change. However, please check by mounted on a board for the actual application.

Ceramic capacitor usually has difference, thermal characteristics and series bias characteristics, and moreover capacity

decreases gradually by using conditions.

For more detail, please be sure to inquire the manufacturer, and select the best ceramic capacitor.

10

0

Rated Voltage：10V

B1 characteristics

Rated Voltage：10V

B characteristics

-10

-20

-30

-40

-50

-60

-70

-80

-90

-100

Rated Voltage：6.3V

B characteristics

Rated Voltage:10V

F characteristics

Rated Voltage：4V

X6S characteristics

0

1

2

3

4

DC Bias Voltage [V]

Ceramic capacitor capacity – DC bias characteristics

(Characteristics example)

10.00

●Equivalent Series Resistance ESR (ceramic capacitor etc.)

Please attach an anti-oscillation capacitor between V_Oand

GND. Capacitor usually has ESR(Equivalent Series

Resistance), and operates stable in ESR-I_Orange, showed

right. Generally, ESR of ceramic, tantalum and electronic

capacitor etc. is different for each, so please be sure to check

a capacitor which is going to use, and use it inside the stable

operating region, showed right. Then, please evaluate for the

actual application.

1.00

0.10

0.01

Safety Area

0

0.1

0.2

0.3

Io [A]

0.4

0.5

ESR – I_Ocharacteristics

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BDxxGA5MEFJ-M

●Evaluation Board Circuit

C3

C7

8

1

2

3

V_CC

N.C

EN

V_O

C6

C5

C2

C1

R1

R2

7

FB

VCC

GND

6

5

GND

N.C.

U1

SW1

V_O

EN

4

FIN

●Evaluation Board Parts List

Designation Value

Part No.

Company Designation Value

Part No.

Company

‐

R1

R2

R3

R4

R5

R6

C1

C2

C3

43kΩ

8.2kΩ

‐

MCR01PZPZF4302

ROHM

‐

C4

C5

C6

C7

C8

C9

C10

U1

U2

‐

MCR01PZPZF8201

‐

1µF

CM105X7R105K16AB

KYOCERA

‐

1µF

‐

CM105B105K16A

KYOCERA

‐

BD00GA5MEFJ-M

‐

ROHM

‐

EN

●Board Layout

GND

C_IN

(

)

V_CC

V_IN

R1

R2

C_OUT

V_O

･Input capacitor C_INof V_CC(V_IN) should be placed very close to V_CC(V_IN) pin as possible, and used broad wiring pattern.

Output capacitor C_OUTalso should be placed close to IC pin as possible. In case connected to inner layer GND plane,

please use several through hole.

・FB pin has comparatively high impedance, and is apt to be effected by noise, so floating capacity should be minimum as

possible. Please be careful in wiring drawing

・Please take GND pattern space widely, and design layout to be able to increase radiation efficiency.

・For output voltage setting

Output voltage can be set by FB pin voltage（0.800V typ.）and external resistance R1, R2.

R1+R2

V_O= VFB×

R2

（The use of resistors with R1+R2=1k to 90kΩ is recommended）

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●I/O Equivalent Circuits (Output Voltage Vairable type)

8pin (V_CC) / 1pin (V_O)

2pin (FB)

5pin (EN)

2pin (FB)

8pin (V_CC

)

5pin (EN)

2MΩ

1MΩ

1pin (V_O)

●I/O Equivalent Circuits (Output Voltage Fixed type)

8pin (V_CC) / 1pin (V_O)

2pin (V_{O_S}

)

5pin (EN)

8pin (V_CC

)

5pin (EN)

2pin (V_{O_S}

)

2MΩ

1MΩ

1pin (V_O)

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●Operational Notes

(1). Absolute maximum ratings

An excess in the absolute maximum ratings, such as supply voltage, temperature range of operating conditions, etc.,

can break down the devices, thus making impossible to identify breaking mode, such as a short circuit or an open

circuit. If any over rated values will expect to exceed the absolute maximum ratings, consider adding circuit protection

devices, such as fuses.

(2). Connecting the power supply connector backward

Connecting of the power supply in reverse polarity can damage IC. Take precautions when connecting the power

supply lines. An external direction diode can be added.

(3). Power supply lines

Design PCB layout pattern to provide low impedance GND and supply lines. To obtain a low noise ground and supply

line, separate the ground section and supply lines of the digital and analog blocks. Furthermore, for all power supply

terminals to ICs, connect a capacitor between the power supply and the GND terminal. When applying electrolytic

capacitors in the circuit, not that capacitance characteristic values are reduced at low temperatures.

(4). GND voltage

The potential of GND pin must be minimum potential in all operating conditions.

(5). Thermal design

Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating

conditions.

(6). Inter-pin shorts and mounting errors

Use caution when positioning the IC for mounting on printed circuit boards. The IC may be damaged if there is any

connection error or if pins are shorted together.

(7). Actions in strong electromagnetic field

Use caution when using the IC in the presence of a strong electromagnetic field as doing so may cause the IC to

malfunction.

(8). ASO

When using the IC, set the output transistor so that it does not exceed absolute maximum ratings or ASO.

(9). Thermal shutdown circuit

The IC incorporates a built-in thermal shutdown circuit (TSD circuit). The thermal shutdown circuit (TSD circuit) is

designed only to shut the IC off to prevent thermal runaway. It is not designed to protect the IC or guarantee its

operation. Do not continue to use the IC after operating this circuit or use the IC in an environment where the

operation of this circuit is assumed.

TSD ON Temperature[℃] (typ.)

Hysteresis Temperature [℃] (typ.)

BDxxGA5MEFJ-M

175

15

(10). Testing on application boards

When testing the IC on an application board, connecting a capacitor to a pin with low impedance subjects the IC to

stress. Always discharge capacitors after each process or step. Always turn the IC’s power supply off before

connecting it to or removing it from a jig or fixture during the inspection process. Ground the IC during assembly

steps as an antistatic measure. Use similar precaution when transporting or storing the IC.

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(11). Regarding input pin of the IC

This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them

isolated.

P-N junctions are formed at the intersection of these P layers with the N layers of other elements, creating a parasitic

diode or transistor. For example, the relation between each potential is as follows:

When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.

When GND > Pin B, the P-N junction operates as a parasitic transistor.

Parasitic diodes can occur inevitable in the structure of the IC.

The operation of parasitic diodes can result in mutual interference among circuits, operational faults, or physical

damage. Accordingly, methods by which parasitic diodes operate, such as applying a voltage that is lower than the

GND(P substrate) voltage to an input pin, should not be used.

Transistor (NPN)

Resistor

B

Pin A

Pin B

C

E

Pin A

B

C

E

N

P⁺

P

Parasitic

element

N

Parasitic

element

P substrate

GND

Parasitic element

Other adjacent elements

(12). Ground Wiring Pattern.

When using both small signal and large current GND patterns, it is recommended to isolate the two ground patterns,

placing a single ground point at the ground potential of application so that the pattern wiring resistance and voltage

variations caused by large currents do not cause variations in the small signal ground voltage. Be careful not to

change the GND wiring pattern of any external components, either.

Status of this document

The Japanese version of this document is formal specification. A customer may use this translation version only for a reference

to help reading the formal version.

If there are any differences in translation version of this document formal version takes priority.

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●Physical Dimension Tape and Reel Information

HTSOP-J8

4.9 0.1

(MAX 5.25 include BURR)

Tape

Embossed carrier tape

2500pcs

(3.2)

+

Quantity

6

°

4°

−4

8

7

2

6

3

5

E2

Direction

of feed

The direction is the 1pin of product is at the upper left when you hold

reel on the left hand and you pull out the tape on the right hand

(

)

1

4

1PIN MARK

+0.05

-0.03

0.545

0.17

S

1.27

+0.05

0.42

0.08

-

0.04

M

0.08

S

Direction of feed

1pin

Reel

(Unit : mm)

Order quantity needs to be multiple of the minimum quantity.

∗

●Marking Diagram

HTSOP-J8 (TOP VIEW)

Part Number Marking

LOT Number

x x G A 5 M

1PIN MARK

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Datasheet

BDxxGA5MEFJ-M

●Revision History

Date

Revision

001

Changes

31.Aug.2012

New Release

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Notice

General Precaution

1. Before you use our Products, you are requested to carefully read this document and fully understand its contents.

ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any

ROHM’s Products against warning, caution or note contained in this document.

2. All information contained in this document is current as of the issuing date and subject to change without any prior

notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales

representative.

Precaution on using ROHM Products

1. If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment,

aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life,

bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales

representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way

responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any

ROHM’s Products for Specific Applications.

2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor

products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate

safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which

a failure or malfunction of our Products may cause. The following are examples of safety measures:

[a] Installation of protection circuits or other protective devices to improve system safety

[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure

3. Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below.

Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the

use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our

Products under any special or extraordinary environments or conditions (as exemplified below), your independent

verification and confirmation of product performance, reliability, etc, prior to use, must be necessary:

[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents

[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust

[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,

H2S, NH3, SO2, and NO2

[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves

[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items

[f] Sealing or coating our Products with resin or other coating materials

[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of

flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning

residue after soldering

[h] Use of the Products in places subject to dew condensation

4. The Products are not subject to radiation-proof design.

5. Please verify and confirm characteristics of the final or mounted products in using the Products.

6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,

confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power

exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect

product performance and reliability.

7. De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual

ambient temperature.

8. Confirm that operation temperature is within the specified range described in the product specification.

9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in

this document.

Notice - Rev.004

Daattaasshheeeett

Precaution for Mounting / Circuit board design

1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product

performance and reliability.

2. In principle, the reflow soldering method must be used; if flow soldering method is preferred, please consult with the

ROHM representative in advance.

For details, please refer to ROHM Mounting specification

Precautions Regarding Application Examples and External Circuits

1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the

characteristics of the Products and external components, including transient characteristics, as well as static

characteristics.

2. You agree that application notes, reference designs, and associated data and information contained in this document

are presented only as guidance for Products use. Therefore, in case you use such information, you are solely

responsible for it and you must exercise your own independent verification and judgment in the use of such information

contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses

incurred by you or third parties arising from the use of such information.

Precaution for Electrostatic

This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper

caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be

applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,

isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).

Precaution for Storage / Transportation

1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:

[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2

[b] the temperature or humidity exceeds those recommended by ROHM

[c] the Products are exposed to direct sunshine or condensation

[d] the Products are exposed to high Electrostatic

2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period

may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is

exceeding the recommended storage time period.

3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads

may occur due to excessive stress applied when dropping of a carton.

4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of

which storage time is exceeding the recommended storage time period.

Precaution for Product Label

QR code printed on ROHM Products label is for ROHM’s internal use only.

Precaution for Disposition

When disposing Products please dispose them properly using an authorized industry waste company.

Precaution for Foreign Exchange and Foreign Trade act

Since our Products might fall under controlled goods prescribed by the applicable foreign exchange and foreign trade act,

please consult with ROHM representative in case of export.

Precaution Regarding Intellectual Property Rights

1. All information and data including but not limited to application example contained in this document is for reference

only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any

other rights of any third party regarding such information or data. ROHM shall not be in any way responsible or liable

for infringement of any intellectual property rights or other damages arising from use of such information or data.:

2. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any

third parties with respect to the information contained in this document.

Notice - Rev.004

Daattaasshheeeett

Other Precaution

1. The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all

information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or

liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or

concerning such information.

2. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.

3. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written

consent of ROHM.

4. In no event shall you use in any way whatsoever the Products and the related technical information contained in the

Products or this document for any military purposes, including but not limited to, the development of mass-destruction

weapons.

5. The proper names of companies or products described in this document are trademarks or registered trademarks of

ROHM, its affiliated companies or third parties.

Notice - Rev.004

型号:	CM105X7R152K10AT
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Active
IHS 制造商：	KYOCERA CORP
包装说明：	, 0603
Reach Compliance Code：	compliant
ECCN代码：	EAR99
HTS代码：	8532.24.00.20
风险等级：	5.43
电容：	0.0015 µF
电容器类型：	CERAMIC CAPACITOR
介电材料：	CERAMIC
JESD-609代码：	e3
制造商序列号：	CM
安装特点：	SURFACE MOUNT
多层：	Yes
负容差：	10%
端子数量：	2
最高工作温度：	125 °C
最低工作温度：	-55 °C
封装形状：	RECTANGULAR PACKAGE
包装方法：	TR, 7 INCH
正容差：	10%
额定（直流）电压（URdc）：	10 V
尺寸代码：	0603
表面贴装：	YES
温度特性代码：	X7R
温度系数：	15% ppm/ °C
端子面层：	Tin (Sn) - with Nickel (Ni) barrier
端子形状：	WRAPAROUND
Base Number Matches：	1

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