CPH3351-TL-H全新原装原理图各脚功能电路原理芯片引脚定义-中国IC网-芯三七

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产品型号CPH3351-TL-H的概述

CPH3351-TL-H芯片概述 CPH3351-TL-H是一款广泛应用于现代电子产品的功率放大器芯片，其设计旨在满足高效、低功耗以及小型化的需求。此芯片在移动通信、收发器、音频放大等领域表现出色，因其良好的线性度和高增益特性而受到众多工程师的重视。 CPH3351-TL-H详细参数 CPH3351-TL-H的详细参数包括但不限于以下几点： - 工作电压：3V至6V - 输出功率：通常可达1W - 频率范围：从几百兆赫兹到几千兆赫兹 - 增益：约为18dB至20dB - 线性度：表现优良，适合于各种调制方式 - 输入阻抗：大约为50Ω - 输出阻抗：也为50Ω，便于与其他元件连接此外，芯片对热管理的设计也特别周到，允许在一定的温度范围内安全运行，从而提升了其应用的灵活性。厂家、包装与封装 CPH3351-TL-H芯片由知名半导体厂家生产，因其性能稳定而受到广泛认可。厂家通常提供多...

产品型号CPH3351-TL-H的Datasheet PDF文件预览

CPH3351

Ordering number : ENA1880A

SANYO Sem iconductors

DATA S HEET

P-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

CPH3351

Features

•

ON-resistance R (on)1=190m (typ.)

•

4V drive

Halogen free compliance

Protection diode in

Speciﬁcations

at Ta=25°C

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Symbol

Conditions

Ratings

Unit

--60

±20

--1.8

--7.2

DSS

GSS

Drain Current (Pulse)

PW 10 s, duty cycle 1%

≤

Allowable Power Dissipation

Channel Temperature

Storage Temperature

When mounted on ceramic substrate (900mm²0.8mm)

°C

Tch

150

Tstg

--55 to +150

Package Dimensions

unit : mm (typ)

Product & Package Information

• Package

: CPH3

7015A-004

• JEITA, JEDEC

: SC-59, TO-236, SOT-23

• Minimum Packing Quantity : 3,000 pcs./reel

CPH3351-TL-H

Packing Type: TL

Marking

2.9

0.15

0.05

0.95

1 : Gate

2 : Source

3 : Drain

0.4

Electrical Connection

SANYO : CPH3

http://semicon.sanyo.com/en/network

60612 TKIM/D0810PE TKIM TC-00002526

No. A1880-1/7

CPH3351

at Ta=25°C

Electrical Characteristics

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

--60

max

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

=-- 1mA, V =0V

μA

(BR)DSS

=-- 60V, V =0V

-- 1

DSS

=±16V, V =0V

±10

GSS

(off)

=-- 10V, I =-- 1mA

--1.2

--2.6

Forward Transfer Admittance

| yfs |

=-- 10V, I =-- 1A

2.7

(on)1

(on)2

(on)3

=-- 1A, V =-- 10V

190

235

250

262

250

330

350

mΩ

Static Drain-to-Source On-State Resistance

=-- 0.5A, V =-- 4.5V

=-- 0.5A, V =-- 4V

Input Capacitance

Ciss

=--20V, f=1MHz

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Coss

Crss

(on)

See speciﬁed Test Circuit.

5.1

5.4

Turn-OFF Delay Time

Fall Time

(off)

Total Gate Charge

=--30V, V =--10V, I =--1.8A

6.0

Gate-to-Source Charge

Gate-to-Drain “Miller” Charge

Diode Forward Voltage

Qgs

Qgd

=--30V, V =--10V, I =--1.8A

0.83

1.3

=--30V, V =--10V, I =--1.8A

I =--1.8A, V =0V

S GS

--0.82

--1.2

Switching Time Test Circuit

V = --30V

--10V

= --1A

R =30Ω

OUT

PW=10μs

D.C.≤1%

CPH3351

P. G

50Ω

Ordering Information

Device

Package

CPH3

Shipping

3,000pcs./reel

memo

CPH3351-TL-H

Pb Free and Halogen Free

No. A1880-2/7

CPH3351

-- V

D GS

--2.0

--1.8

--1.6

--1.4

--1.2

--1.0

--0.8

--0.6

--0.4

--2.5

--2.0

--1.5

--1.0

= --10V

--0.5

--0.2

= --2.0V

--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0

--0.5

--1.0

--1.5

--2.0

--2.5

--3.0

IT16093

Drain-to-Source Voltage, V

-- V

IT16092

Gate-to-Source Voltage, V -- V

(on) -- V

(on) -- Ta

700

600

500

400

300

200

500

450

400

350

300

250

200

150

100

Ta=25°C

= --0.5A

--1.0A

100

--2

--4

--6

--8

--10 --12 --14 --16 --18 --20

--60 --40 --20

80 100 120 140 160

Gate-to-Source Voltage, V

-- V

IT16094

Ambient Temperature, Ta -- °C

IT16095

| yfs | -- I

-- V

S SD

--10

= --10V

=0V

--1.0

1.0

--0.1

0.1

--0.01

5 7

--10

--0.2

--0.4

--0.6

--0.8

--1.0

--1.2

IT16097

--0.01

--0.1

--1.0

Drain Current, I -- A

IT16096

Diode Forward Voltage, V -- V

SW Time -- I

Ciss, Coss, Crss -- V

100

1000

= --30V

= --10V

f=1MHz

d(off)

100

1.0

--0.01

5 7

--10

--20

--30

--40

--50

--60

IT16099

--0.1

--1.0

--10

IT16098

Drain Current, I -- A

Drain-to-Source Voltage, V -- V

No. A1880-3/7

CPH3351

A S O

-- Qg

--10

--9

--8

--7

--6

--5

--4

--3

--2

= --30V

= --1.8A

= --7.2A (PW≤10μs)

I = --1.8A

--1.0

Operation in this

area is limited by R (on).

--0.1

Ta=25°C

--1

Single pulse

When mounted on ceramic substrate (900mm²×0.8mm)

--0.01

--0.1

--1.0

--10

--100

IT16101

Total Gate Charge, Qg -- nC

IT16100

Drain-to-Source Voltage, V -- V

-- Ta

1.2

1.0

0.8

0.6

0.4

When mounted on ceramic substrate

(900mm²×0.8mm)

0.2

100

120

140

160

Ambient Temperature, Ta -- °C

IT16102

No. A1880-4/7

CPH3351

Embossed Taping Speciﬁcation

CPH3351-TL-H

No. A1880-5/7

CPH3351

Outline Drawing

Land Pattern Example

CPH3351-TL-H

Mass (g) Unit

Unit: mm

0.013

* For reference

0.6

0.95

No. A1880-6/7

CPH3351

Note on usage : Since the CPH3351 is a MOSFET product, please avoid using this device in the vicinity

of highly charged objects.

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

"standard application", intended for the use as general electronics equipment. The products mentioned herein

shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,

aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal

system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten

human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they

grant any guarantee thereof. If you should intend to use our products for new introduction or other application

different from current conditions on the usage of automotive device, communication device, office equipment,

industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.)

prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be

solely responsible for the use.

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are

not guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer's products or equipment. To verify symptoms and states that cannot be evaluated in an

independent device, the customer should always evaluate and test devices mounted in the customer's

products or equipment.

SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using

products at values that exceed, even momentarily, rated values (such as maximum ratings, operating

condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor

Co.,Ltd. products described or contained herein.

Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,

high current, high voltage, or drastic temperature change, even if it is used within the range of absolute

maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a

confirmation.

SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all

semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures

or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give

rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,

adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but

are not limited to protective circuits and error prevention circuits for safe design, redundant design, and

structural design.

In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are

controlled under any of applicable local export control laws and regulations, such products may require the

export license from the authorities concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or

mechanical, including photocopying and recording, or any information storage or retrieval system, or

otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the

SANYO Semiconductor Co.,Ltd. product that you intend to use.

Upon using the technical information or products described herein, neither warranty nor license shall be

granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any

third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third

party's intellectual property rights which has resulted from the use of the technical information and products

mentioned above.

This catalog provides information as of June, 2012. Speciﬁcations and information herein are subject

to change without notice.

PS No. A1880-7/7

CPH3351-TL-H相关文章

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CPH3351-TL-H产品参数

型号:	CPH3351-TL-H
Brand Name：	ON Semiconductor
是否无铅：	不含铅
生命周期：	Not Recommended
包装说明：	SC-59, 3 PIN
针数：	3
制造商包装代码：	318BA
Reach Compliance Code：	not_compliant
ECCN代码：	EAR99
风险等级：	5.12
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	60 V
最大漏极电流 (Abs) (ID)：	1.8 A
最大漏极电流 (ID)：	1.8 A
最大漏源导通电阻：	0.25 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-236
JESD-30 代码：	R-PDSO-G3
JESD-609代码：	e6
湿度敏感等级：	1
元件数量：	1
端子数量：	3
工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性/信道类型：	P-CHANNEL
最大功率耗散 (Abs)：	1 W
子类别：	Other Transistors
表面贴装：	YES
端子面层：	Tin/Bismuth (Sn/Bi)
端子形式：	GULL WING
端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管元件材料：	SILICON
Base Number Matches：	1

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