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产品型号CPH5857的Datasheet PDF文件预览

Ordering number : ENA0547  
SANYO Sem iconductors  
DATA S HEET  
MOSFET : P-Channel Silicon MOSFET  
SBD : Schottky Barrier Diode  
CPH5857  
General-Purpose Switching Device  
Applications  
Features  
Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package  
facilitating high-density mounting.  
[MOSFET]  
Low ON-resistance.  
Ultrahigh-speed switching.  
1.8V drive.  
[SBD]  
Short reverse recovery time.  
Low forward voltage.  
Junction temperature 150°C guarantee.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Symbol  
Conditions  
Ratings  
Unit  
[MOSFET]  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Drain Current (DC)  
V
V
--20  
±10  
--1.5  
--6.0  
0.9  
V
V
DSS  
GSS  
I
A
D
Drain Current (Pulse)  
Allowable Power Dissipation  
Channel Temperature  
Storage Temperature  
[SBD]  
I
PW10µs, duty cycle1%  
A
DP  
P
Mounted on a ceramic board (900mm20.8mm) 1unit  
W
°C  
°C  
D
Tch  
150  
Tstg  
--55 to +150  
Repetitive Peak Reverse Voltage  
Nonrepetitive Peak Reverse Surge Voltage  
Average Output Current  
Surge Forward Current  
Junction Temperature  
Storage Temperature  
Marking : YK  
V
15  
V
V
RRM  
V
15  
RSM  
I
O
1
3
A
I
50Hz sine wave, 1 cycle  
A
FSM  
Tj  
--55 to +150  
--55 to +150  
°C  
°C  
Tstg  
Any and all SANYO Semiconductor products described or contained herein do not have specifications  
that can handle applications that require extremely high levels of reliability, such as life-support systems,  
aircraft's control systems, or other applications whose failure can be reasonably expected to result in  
serious physical and/or material damage. Consult with your SANYO Semiconductor representative  
nearest you before using any SANYO Semiconductor products described or contained herein in such  
applications.  
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products  
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition  
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor  
products described or contained herein.  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
D2006PE TI IM TC-00000405 No. A0547-1/6  
CPH5857  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
[MOSFET]  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
=--1mA, V =0V  
--20  
V
µA  
µA  
V
(BR)DSS  
D GS  
I
V
V
V
V
=--20V, V =0V  
GS  
--1  
DSS  
GSS  
DS  
GS  
DS  
DS  
I
=±8V, V =0V  
DS  
±10  
V
(off)  
GS  
=--10V, I =--1mA  
--0.4  
1.3  
--1.3  
D
Forward Transfer Admittance  
yfs  
=--10V, I =--800mA  
2.3  
180  
240  
350  
290  
40  
S
D
R
(on)1  
I
D
I
D
I
D
=--800mA, V =--4V  
GS  
235  
340  
600  
mΩ  
mΩ  
mΩ  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
V
DS  
DS  
DS  
Static Drain-to-Source On-State Resistance  
R
R
(on)2  
(on)3  
=--400mA, V =--2.5V  
GS  
=--70mA, V =--1.8V  
GS  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-ON Delay Time  
Rise Time  
Ciss  
V
V
V
=--10V, f=1MHz  
DS  
=--10V, f=1MHz  
DS  
=--10V, f=1MHz  
DS  
Coss  
Crss  
25  
t (on)  
d
See specified Test Circuit.  
See specified Test Circuit.  
See specified Test Circuit.  
See specified Test Circuit.  
10  
t
r
35  
Turn-OFF Delay Time  
Fall Time  
t (off)  
d
32  
t
27  
f
Total Gate Charge  
Gate-to-Source Charge  
Gate-to-Drain “Miller” Charge  
Diode Forward Voltage  
[SBD]  
Qg  
Qgs  
Qgd  
V
V
V
=--10V, V =--4V, I =--1.5A  
GS  
3.2  
0.8  
0.6  
--0.87  
DS  
DS  
DS  
D
=--10V, V =--4V, I =--1.5A  
GS  
D
=--10V, V =--4V, I =--1.5A  
GS  
D
V
SD  
I
S
=--1.5A, V =0V  
GS  
--1.2  
Reverse Voltage  
V
I
=0.2mA  
15  
V
V
R
R
V 1  
F
I =0.5A  
F
0.44  
0.51  
0.49  
0.56  
3
Forward Voltage  
V 2  
F
I =1A  
F
V
Reverse Current  
I
R
V
V
=7.5V  
R
R
µA  
pF  
ns  
Interterminal Capacitance  
Reverse Recovery Time  
C
=10V, f=1MHz, 1 cycle  
20  
t
rr  
I =I =100mA, See specified Test Circuit.  
F R  
10  
Package Dimensions  
unit : mm (typ)  
Electrical Connection  
7017A-005  
4
5
3
1 : Cathode  
2 : Drain  
3 : Gate  
4 : Source  
5 : Anode  
0.15  
2.9  
4
5
3
2
0.05  
1
2
Top view  
1
1 : Cathode  
2 : Drain  
0.95  
0.4  
3 : Gate  
4 : Source  
5 : Anode  
SANYO : CPH5  
No. A0547-2/6  
CPH5857  
Switching Time Test Circuit  
t
Test Circuit  
rr  
[MOSFET]  
[SBD]  
V
= --10V  
DD  
V
IN  
Duty10%  
0V  
--4V  
I
= --800mA  
D
V
IN  
R =12.5  
L
50Ω  
100Ω  
10Ω  
D
V
OUT  
PW=10µs  
D.C.1%  
10µs  
--5V  
G
t
rr  
CPH5857  
P. G  
50Ω  
S
[MOSFET]  
I
-- V  
[MOSFET]  
I
-- V  
D GS  
D
DS  
--2.0  
--1.8  
--1.6  
--1.4  
--1.2  
--1.0  
--0.8  
--0.6  
--0.4  
--2.0  
V
= --10V  
DS  
--1.8  
--1.6  
--1.4  
--1.2  
--1.0  
--0.8  
--0.6  
--0.4  
--0.2  
0
--0.2  
0
0
--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0  
0
--0.5  
--1.0  
--1.5  
--2.0  
--2.5  
IT02732  
IT02731  
Drain-to-Source Voltage, V  
-- V  
Gate-to-Source Voltage, V  
GS  
-- V  
[MOSFET]  
DS  
[MOSFET]  
R
DS  
(on) -- V  
R
(on) -- Ta  
GS  
DS  
600  
500  
400  
300  
200  
500  
400  
300  
200  
Ta=25°C  
--0.8A  
I
= --0.4A  
D
100  
0
100  
0
0
--1  
--2  
--3  
--4  
--5  
--6  
--7  
--8  
--9  
--10  
--60 --40 --20  
0
20  
40  
60  
80 100 120 140 160  
Gate-to-Source Voltage, V  
GS  
-- V  
IT02733  
Ambient Temperature, Ta -- °C  
IT02734  
No. A0547-3/6  
CPH5857  
[MOSFET]  
= --10V  
[MOSFET]  
=0V  
yfs-- I  
I
-- V  
S SD  
D
10  
--10  
7
5
V
V
GS  
DS  
7
5
3
2
3
2
--1.0  
7
5
1.0  
3
2
7
5
--0.1  
7
5
3
2
3
2
0.1  
--0.01  
--0.01  
2
3
5
7
2
3
5
7
2
3
5
0
--0.2  
--0.4  
--0.6  
--0.8  
--1.0  
--1.2  
--1.4  
--0.1  
--1.0  
Drain Current, I -- A  
D
IT02735  
Diode Forward Voltage, V -- V  
SD  
IT02736  
[MOSFET]  
Ciss, Coss, Crss -- V  
[MOSFET]  
f=1MHz  
SW Time -- I  
DS  
D
100  
1000  
V
V
= --10V  
= --4V  
GS  
DD  
7
7
5
5
Ciss  
3
2
3
2
t
f
100  
7
5
t (on)  
d
10  
7
5
3
2
3
10  
3
5
7
2
3
5
7
2
3
5
0
--5  
--10  
--15  
--20  
IT02738  
--0.1  
--1.0  
Drain Current, I -- A  
IT02737  
Drain-to-Source Voltage, V  
-- V  
D
DS  
[MOSFET]  
[MOSFET]  
V
-- Qg  
A S O  
GS  
--4  
--10  
7
5
I
= --6.0A  
10µs  
V
= --10V  
DP  
DS  
I = --1.5A  
D
3
2
I = --1.5A  
D
--3  
--2  
--1.0  
7
5
3
2
--0.1  
7
5
Operation in this  
area is limited by R (on).  
--1  
DS  
3
2
Ta=25°C  
Single pulse  
Mounted on a ceramic board(900mm20.8mm)1unit  
--0.01  
--0.01  
0
0
1
2
3
3.5  
IT02739  
2
3
5
7
2
3
5
7
2
3
5
7
2 3  
--0.1  
--1.0  
--10  
Drain-to-Source Voltage, V  
-- V  
IT11563  
Total Gate Charge, Qg -- nC  
DS  
[MOSFET]  
P
D
-- Ta  
1.2  
1.0  
0.9  
0.8  
0.6  
0.4  
0.2  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
Ambient Temperature, Ta -- °C  
IT11564  
No. A0547-4/6  
CPH5857  
I
-- V  
I
-- V  
R
R
F
F
10000  
1000  
100  
10  
3
2
1.0  
7
5
3
2
0.1  
7
5
1.0  
3
2
0.1  
0.01  
7
5
C
0.01  
C
C
C
C
C
C
°
C
°
°
°
°
°
°
°
5
2
0
75  
25  
50  
125  
100  
--  
3
2
0.001  
a=150  
T
0.0001  
0.001  
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0
2
4
6
8
10  
12  
14  
16  
Forward Voltage, V -- V  
F
IT11204  
Reverse Voltage, V -- V  
R
IT11205  
P (AV) -- V  
P (AV) -- I  
R
RM  
F
O
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
1.2E--0.5  
1.0E--0.5  
8.0E--0.6  
6.0E--0.6  
4.0E--0.6  
Rectangular  
wave  
(1)Rectangular wave θ=300  
(2)Rectangular wave θ=240  
(3)Rectangular wave θ=180  
°
°
°
(1)  
(4) (3)  
(2)  
(1)  
(2)  
θ
(4)Sine wave θ=180  
°
360°  
Rectangular  
wave  
Sine wave  
V
R
θ
180°  
360°  
360°  
(3)  
(4)  
Sine wave  
V
R
180°  
360°  
(1)Rectangular wave θ=60  
°
2.0E--0.6  
0.0E+00  
(2)Rectangular wave θ=120  
(3)Rectangular wave θ=180  
°
°
0.1  
0
(4)Sine wave θ=180  
°
0
2
4
6
8
10  
12  
14  
16  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
IT11206  
Peak Reverse Voltage, V  
-- V  
IT11207  
Average Output Current, I -- A  
O
RM  
Tc -- I  
(1)Rectangular wave θ=60  
(2)Rectangular wave θ=120  
(3)Rectangular wave θ=180  
(4)Sine wave θ=180  
C -- V  
R
O
160  
140  
120  
100  
80  
5
°
°
°
3
2
°
*When mounted in reliability  
operaion board,  
Rth(J-a)=183.67°C/W  
100  
7
(4)  
5
Rectangular  
wave  
60  
θ
3
2
40  
360°  
(3)  
(2)  
(1)  
Sine  
wave  
20  
0
180°  
360°  
0.4  
10  
0.1  
2
3
5
7
2
3
5
7
2
3
0
0.2  
0.6  
0.8  
1.0  
1.2  
1.0  
10  
Average Output Current, I -- A  
IT11208  
IT10275  
Reverse Voltage, V -- V  
O
R
I
-- t  
[SBD]  
FSM  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
Current waveform 50Hz sine wave  
IS  
20ms  
t
0.5  
0
7
2
3
5
7
2
3
5
7
2
3
0.01  
0.1  
1.0  
Time, t -- s  
ID00338  
No. A0547-5/6  
CPH5857  
Note on usage : Since the CPH5857 is a MOSFET product, please avoid using this device in the vicinity  
of highly charged objects.  
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state,  
and are not guarantees of the performance, characteristics, and functions of the described products  
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be  
evaluated in an independent device, the customer should always evaluate and test devices mounted  
in the customer's products or equipment.  
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any  
and all semiconductor products fail with some probability. It is possible that these probabilistic failures  
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or  
fire, or that could cause damage to other property. When designing equipment, adopt safety measures  
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to  
protective circuits and error prevention circuits for safe design, redundant design, and structural design.  
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PS No. A0547-6/6  
配单直通车
CPH5857产品参数
型号:CPH5857
生命周期:Transferred
IHS 制造商:SANYO ELECTRIC CO LTD
包装说明:SMALL OUTLINE, R-PDSO-G5
针数:5
Reach Compliance Code:unknown
ECCN代码:EAR99
风险等级:5.38
配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:20 V
最大漏极电流 (Abs) (ID):1.5 A
最大漏极电流 (ID):1.5 A
最大漏源导通电阻:0.235 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G5
元件数量:1
端子数量:5
工作模式:DEPLETION MODE
最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:SMALL OUTLINE
极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):0.9 W
认证状态:Not Qualified
子类别:Other Transistors
表面贴装:YES
端子形式:GULL WING
端子位置:DUAL
晶体管应用:SWITCHING
晶体管元件材料:SILICON
Base Number Matches:1
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