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    • CR08AS-12BT13 300D图

    • 深圳市华斯顿电子科技有限公司

       该会员已使用本站16年以上
    • CR08AS-12BT13 300D
    • 数量40964 
    • 厂家RENE 
    • 封装 
    • 批号2023+ 
    • 绝对原装正品现货，全新深圳原装进口现货
    • QQ:364510898QQ：364510898 复制
      QQ:515102657QQ：515102657 复制
    • 0755-83777708“进口原装正品专供” QQ:364510898QQ:515102657
    • CR08AS-12B图

    • 万三科技(深圳)有限公司

       该会员已使用本站2年以上
    • CR08AS-12B
    • 数量660000 
    • 厂家KEXIN(科信) 
    • 封装SOT-89-3 
    • 批号23+ 
    • 支持实单/只做原装
    • QQ:3008961398QQ：3008961398 复制
    • 0755-21006672 QQ:3008961398

    产品型号CR08AS-12B的Datasheet PDF文件预览

    MITSUBISHI SEMICONDUCTOR THYRISTOR  
    CR08AS  
    LOW POWER USE  
    NON-INSULATED TYPE, GLASS PASSIVATION TYPE  
    Dimensions  
    CR08AS  
    OUTLINE DRAWING  
    in mm  
    4.4±0.1  
    1.5±0.1  
    1.6±0.2  
    ➀
    ➁
    ➂
    0.5±0.07  
    0.4±0.07  
    +0.03  
    –0.05  
    0.4  
    1.5±0.1 1.5±0.1  
    (Back side)  
    ➁
    CATHODE  
    ANODE  
    GATE  
    ➀
    ➁
    ➂
    ➂
    ➀
    • IT (AV) ........................................................................0.8A  
    • VDRM ..............................................................400V/600V  
    • IGT .........................................................................100µA  
    SOT-89  
    APPLICATION  
    Solid state relay, strobe flasher, ignitor, hybrid IC  
    MAXIMUM RATINGS  
    Voltage class  
    Symbol  
    Parameter  
    Unit  
    8 (marked “AD”)  
    12 (marked “AF”)  
    VRRM  
    Repetitive peak reverse voltage  
    Non-repetitive peak reverse voltage  
    DC reverse voltage  
    400  
    500  
    320  
    400  
    320  
    600  
    720  
    480  
    600  
    480  
    V
    V
    V
    V
    V
    VRSM  
    VR (DC)  
    VDRM  
    ✽1  
    ✽1  
    Repetitive peak off-state voltage  
    DC off-state voltage  
    VD (DC)  
    Symbol  
    Parameter  
    RMS on-state current  
    Average on-state current  
    Surge on-state current  
    Conditions  
    Ratings  
    Unit  
    A
    IT (RMS)  
    IT (AV)  
    ITSM  
    1.26  
    0.8  
    10  
    ✽2  
    Commercial frequency, sine half wave, 180° conduction, Ta=51°C  
    A
    60Hz sine half wave 1 full cycle, peak value, non-repetitive  
    A
    Value corresponding to 1 cycle of half wave 60Hz, surge on-state  
    current  
    2
    2
    2
    I
    t
    I t for fusing  
    0.42  
    A s  
    PGM  
    PG (AV)  
    VFGM  
    VRGM  
    IFGM  
    Tj  
    Peak gate power dissipation  
    Average gate power dissipation  
    Peak gate forward voltage  
    Peak gate reverse voltage  
    Peak gate forward current  
    Junction temperature  
    0.5  
    W
    W
    V
    0.1  
    6
    6
    0.3  
    V
    A
    –40 ~ +125  
    –40 ~ +125  
    48  
    °C  
    °C  
    mg  
    Tstg  
    Storage temperature  
    —
    Weight  
    Typical value  
    ✽1. With Gate-to-cathode resistance RGK=1kΩ  
    Jan.2000  
    MITSUBISHI SEMICONDUCTOR THYRISTOR  
    CR08AS  
    LOW POWER USE  
    NON-INSULATED TYPE, GLASS PASSIVATION TYPE  
    ELECTRICAL CHARACTERISTICS  
    Limits  
    Symbol  
    Parameter  
    Test conditions  
    Unit  
    Min.  
    —
    —
    —
    —
    0.2  
    1
    Typ.  
    —
    Max.  
    0.5  
    0.5  
    1.5  
    0.8  
    —
    mA  
    mA  
    V
    IRRM  
    Repetitive peak reverse current  
    Repetitive peak off-state current  
    On-state voltage  
    Tj=125°C, VRRM applied, RGK=1kΩ  
    Tj=125°C, VDRM applied, RGK=1kΩ  
    Ta=25°C, ITM=2.5A, instantaneous value  
    IDRM  
    VTM  
    VGT  
    VGD  
    IGT  
    —
    —
    ✽4  
    —
    V
    Gate trigger voltage  
    Ta=25°C, VD=6V, IT=0.1A  
    —
    Gate non-trigger voltage  
    Gate trigger current  
    Tj=125°C, VD=1/2VDRM, RGK=1kΩ  
    V
    ✽3  
    ✽4  
    —
    100  
    3
    µA  
    mA  
    °C/W  
    Tj=25°C, VD=6V, IT=0.1A  
    —
    —
    1.5  
    —
    IH  
    Holding current  
    Tj=25°C, VD=12V, RGK=1kΩ  
    ✽2  
    65  
    Rth (j-a)  
    Thermal resistance  
    Junction to ambient  
    ✽2. Soldering with ceramic plate (25mm × 25mm × t0.7).  
    ✽3. If special values of IGT are required, choose at least two items from those listed in the table below. (Example: AB, BC)  
    Item  
    A
    B
    C
    IGT (µA)  
    1 ~ 30  
    20 ~ 50  
    40 ~ 100  
    The above values do not include the current flowing through the 1kΩ resistance between the gate and cathode.  
    ✽4. IGT, VGT measurement circuit.  
    60Ω  
    A1  
    I
    GS  
    IGT  
    TUT  
    A3  
    A2  
    6V  
    DC  
    3V  
    DC  
    V1  
    V
    R
    GK  
    1
    2
    GT  
    1kΩ  
    SWITCH  
    SWITCH 1 : IGT measurement  
    SWITCH 2 : VGT measurement  
    (Inner resistance of voltage meter is about 1kΩ)  
    PERFORMANCE CURVES  
    MAXIMUM ON-STATE CHARACTERISTICS  
    RATED SURGE ON-STATE CURRENT  
    102  
    10  
    9
    8
    7
    6
    5
    4
    3
    2
    1
    0
    7
    Ta = 25°C  
    5
    3
    2
    101  
    7
    5
    3
    2
    100  
    7
    5
    3
    2
    10–1  
    0
    1
    2
    3
    4
    5
    100  
    2
    3 4 5 7 101  
    2
    3 4 5 7 102  
    ON-STATE VOLTAGE (V)  
    CONDUCTION TIME  
    (CYCLES AT 60Hz)  
    Jan.2000  
    MITSUBISHI SEMICONDUCTOR THYRISTOR  
    CR08AS  
    LOW POWER USE  
    NON-INSULATED TYPE, GLASS PASSIVATION TYPE  
    GATE TRIGGER CURRENT VS.  
    JUNCTION TEMPERATURE  
    103  
    GATE CHARACTERISTICS  
    102  
    7
    TYPICAL EXAMPLE  
    7
    5
    5
    3
    2
    3
    2
    V
    FGM = 6V  
    PGM = 0.5W  
    101  
    7
    102  
    7
    5
    3
    2
    5
    3
    2
    P
    G(AV) = 0.1W  
    V
    GT = 0.8V  
    100  
    7
    I
    GT = 100µA  
    5
    3
    2
    (T  
    j = 25°C)  
    101  
    7
    5
    3
    2
    10–1  
    7
    5
    V
    GD = 0.2V  
    I
    FGM = 0.3A  
    3
    2
    10–2  
    100  
    10–223 5710–123 57100 23 57101 23 57102 23  
    GATE CURRENT (mA)  
    –40–20 0 20 40 60 80 100120140160  
    JUNCTION TEMPERATURE (°C)  
    MAXIMUM TRANSIENT THERMAL  
    IMPEDANCE CHARACTERISTICS  
    (JUNCTION TO AMBIENT)  
    GATE TRIGGER VOLTAGE VS.  
    JUNCTION TEMPERATURE  
    100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103  
    103  
    1.0  
    7
    25 25 t0.7  
    ALUMINUM BOARD  
    WITH SOLDERING  
    0.9  
    0.8  
    0.7  
    0.6  
    0.5  
    0.4  
    0.3  
    0.2  
    0.1  
    0
    5
    3
    2
    DISTRIBUTION  
    TYPICAL EXAMPLE  
    102  
    7
    5
    3
    2
    101  
    7
    5
    3
    2
    100  
    10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100  
    TIME (s)  
    –40 –20  
    0
    20 40 60 80 100 120  
    JUNCTION TEMPERATURE (°C)  
    ALLOWABLE AMBIENT TEMPERATURE VS.  
    AVERAGE ON-STATE CURRENT  
    (SINGLE-PHASE HALF WAVE)  
    MAXIMUM AVERAGE POWER DISSIPATION  
    (SINGLE-PHASE HALF WAVE)  
    1.6  
    160  
    25 25 t0.7  
    θ = 30° 60° 90° 120°  
    ALUMINUM BOARD  
    WITH SOLDERING  
    1.4  
    1.2  
    1.0  
    0.8  
    0.6  
    0.4  
    0.2  
    0
    140  
    120  
    100  
    80  
    180°  
    θ
    360°  
    RESISTIVE,  
    INDUCTIVE  
    LOADS  
    NATURAL  
    CONVECTION  
    60  
    θ = 30° 90° 180°  
    40  
    θ
    60° 120°  
    360°  
    20  
    RESISTIVE, INDUCTIVE LOADS  
    0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6  
    0
    0
    0
    0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6  
    AVERAGE ON-STATE CURRENT (A)  
    AVERAGE ON-STATE CURRENT (A)  
    Jan.2000  
    MITSUBISHI SEMICONDUCTOR THYRISTOR  
    CR08AS  
    LOW POWER USE  
    NON-INSULATED TYPE, GLASS PASSIVATION TYPE  
    ALLOWABLE AMBIENT TEMPERATURE VS.  
    AVERAGE ON-STATE CURRENT  
    (SINGLE-PHASE HALF WAVE)  
    MAXIMUM AVERAGE POWER DISSIPATION  
    (SINGLE-PHASE FULL WAVE)  
    160  
    1.6  
    RESISTIVE,  
    θ = 30° 60° 90° 120°  
    INDUCTIVE  
    LOADS  
    140  
    1.4  
    180°  
    θ
    360°  
    120  
    100  
    80  
    60  
    40  
    20  
    0
    1.2  
    1.0  
    0.8  
    0.6  
    0.4  
    NATURAL  
    CONVECTION  
    θ = 180°  
    65°C/W  
    90°C/W  
    θ
    θ
    360°  
    0.2  
    0
    R
    th(j – a) = 200°C/W  
    RESISTIVE LOADS  
    0
    0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8  
    0
    0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6  
    AVERAGE ON-STATE CURRENT (A)  
    AVERAGE ON-STATE CURRENT (A)  
    ALLOWABLE AMBIENT TEMPERATURE VS.  
    AVERAGE ON-STATE CURRENT  
    (SINGLE-PHASE FULL WAVE)  
    MAXIMUM AVERAGE POWER DISSIPATION  
    (RECTANGULAR WAVE)  
    160  
    1.6  
    90° 180°  
    θ = 30° 60° 120° 270°  
    25 25 t0.7  
    ALUMINUM BOARD  
    WITH SOLDERING  
    140  
    120  
    100  
    80  
    1.4  
    DC  
    θ
    θ
    360°  
    1.2  
    1.0  
    0.8  
    RESISTIVE LOADS  
    NATURAL  
    CONVECTION  
    60  
    0.6  
    θ
    360°  
    40  
    0.4  
    0.2  
    0
    60°  
    θ = 30°  
    120°  
    RESISTIVE,  
    INDUCTIVE  
    LOADS  
    20  
    90°  
    180°  
    0
    0
    0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6  
    0
    0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6  
    AVERAGE ON-STATE CURRENT (A)  
    AVERAGE ON-STATE CURRENT (A)  
    ALLOWABLE AMBIENT TEMPERATURE VS.  
    AVERAGE ON-STATE CURRENT  
    (RECTANGULAR WAVE)  
    BREAKOVER VOLTAGE VS.  
    JUNCTION TEMPERATURE  
    160  
    160  
    140  
    120  
    100  
    80  
    25 25 t0.7  
    ALUMINUM BOARD  
    WITH SOLDERING  
    TYPICAL EXAMPLE  
    140  
    120  
    100  
    80  
    θ
    360°  
    RESISTIVE,  
    INDUCTIVE  
    LOADS  
    NATURAL  
    CONVECTION  
    RGK = 1kΩ  
    60  
    60  
    40  
    40  
    θ = 30° 60° 120° 270°  
    20  
    20  
    90° 180°  
    DC  
    0
    0
    0
    0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6  
    –40–20 0 20 40 60 80 100120140160  
    AVERAGE ON-STATE CURRENT (A)  
    JUNCTION TEMPERATURE (°C)  
    Jan.2000  
    MITSUBISHI SEMICONDUCTOR THYRISTOR  
    CR08AS  
    LOW POWER USE  
    NON-INSULATED TYPE, GLASS PASSIVATION TYPE  
    BREAKOVER VOLTAGE VS.  
    GATE TO CATHODE RESISTANCE  
    BREAKOVER VOLTAGE VS.  
    RATE OF RISE OF OFF-STATE VOLTAGE  
    160  
    120  
    100  
    80  
    60  
    40  
    20  
    0
    TYPICAL EXAMPLE  
    T
    j
    = 125°C  
    TYPICAL EXAMPLE  
    RGK = 1kΩ  
    140  
    120  
    100  
    80  
    60  
    40  
    20  
    Tj = 125°C  
    0
    10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102  
    100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103  
    GATE TO CATHODE RESISTANCE (kΩ)  
    RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)  
    HOLDING CURRENT VS.  
    HOLDING CURRENT VS.  
    JUNCTION TEMPERATURE  
    GATE TO CATHODE RESISTANCE  
    101  
    500  
    DISTRIBUTION  
    7
    5
    TYPICAL EXAMPLE  
    TYPICAL EXAMPLE  
    GT (25°C) = 35µA  
    I
    GT (25°C)  
    I
    H
    (1kΩ)  
    I
    3
    2
    # 1 25µA  
    0.9mA  
    400  
    300  
    200  
    100  
    0
    100  
    7
    5
    3
    2
    10–1  
    7
    # 1  
    5
    3
    2
    Tj = 25°C  
    R
    GK = 1kΩ  
    10–2  
    10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102  
    –60–40–20 0 20 40 60 80 100120140  
    JUNCTION TEMPERATURE (°C)  
    GATE TO CATHODE RESISTANCE (kΩ)  
    HOLDING CURRENT VS.  
    GATE TRIGGER CURRENT  
    TURN-ON TIME VS. GATE CURRENT  
    4.0  
    3.5  
    3.0  
    2.5  
    2.0  
    1.5  
    1.0  
    0.5  
    0
    102  
    7
    TYPICAL EXAMPLE  
    V
    D
    = 100V  
    Tj = 25°C  
    5
    RL  
    = 47Ω  
    3
    2
    R
    GK = 1kΩ  
    = 25°C  
    T
    a
    101  
    7
    5
    3
    2
    100  
    7
    5
    3
    2
    10–1  
    100  
    101  
    GATE TRIGGER CURRENT (µA)  
    102  
    10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102  
    GATE CURRENT (mA)  
    Jan.2000  
    MITSUBISHI SEMICONDUCTOR THYRISTOR  
    CR08AS  
    LOW POWER USE  
    NON-INSULATED TYPE, GLASS PASSIVATION TYPE  
    TURN-OFF TIME VS.  
    JUNCTION TEMPERATURE  
    REPETITIVE PEAK REVERSE VOLTAGE VS.  
    JUNCTION TEMPERATURE  
    40  
    35  
    30  
    25  
    20  
    15  
    10  
    5
    160  
    TYPICAL EXAMPLE  
    V
    D
    = 50V, V  
    R = 50V  
    140  
    120  
    100  
    80  
    IT = 2A, RGK = 1kΩ  
    TYPICAL EXAMPLE  
    DISTRIBUTION  
    60  
    40  
    20  
    0
    0
    0
    20 40 60 80 100 120 140 160  
    JUNCTION TEMPERATURE (°C)  
    –40–20 0 20 40 60 80 100120140160  
    JUNCTION TEMPERATURE (°C)  
    GATE TRIGGER CURRENT VS.  
    GATE CURRENT PULSE WIDTH  
    THERMAL IMPEDANCE VS.  
    BOARD DIMENSIONS  
    104  
    7
    320  
    T
    j
    = 25°C  
    TYPICAL EXAMPLE  
    GT (DC)  
    5
    280  
    3
    2
    I
    240  
    # 1 10µA  
    # 2 65µA  
    # 1  
    103  
    7
    5
    WITHOUT EPOXY PLATE  
    200  
    # 2  
    160  
    120  
    3
    2
    102  
    7
    5
    80  
    t0.7  
    ALUMINUM  
    BOARD  
    3
    2
    40  
    0
    10×10 EPOXY PLATE  
    WITH COPPER FOIL  
    101  
    100  
    2
    3 4 5 7 101  
    GATE CURRENT PULSE WIDTH (µs)  
    2
    3 4 5 7 102  
    0
    10 20 30 40 50 60 70 80  
    BOARD DIMENSIONS (mm)  
    REGULAR SQUARE ONE SIDE  
    Jan.2000  
    配单直通车
    CR08AS-12B产品参数
    型号:CR08AS-12B
    生命周期：Obsolete
    包装说明：,
    Reach Compliance Code：unknown
    ECCN代码：EAR99
    风险等级：5.75
    最大直流栅极触发电流：0.05 mA
    最大直流栅极触发电压：0.8 V
    最大维持电流：3 mA
    最大漏电流：0.5 mA
    通态非重复峰值电流：10 A
    最大通态电流：800 A
    最高工作温度：125 °C
    最低工作温度：-40 °C
    断态重复峰值电压：600 V
    子类别：Silicon Controlled Rectifiers
    表面贴装：YES
    触发设备类型：SCR
    Base Number Matches：1
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