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产品型号CS5212EDR14的Datasheet PDF文件预览

CS5212  
Low Voltage Synchronous  
Buck Controller  
The CS5212 is a low voltage synchronous buck controller. It  
contains all required circuitry for a synchronous buck converter using  
external N–Channel MOSFETs. High current internal gate drivers are  
http://onsemi.com  
capable of driving high gate capacitance of low R  
NFETs for  
DS(on)  
2
better efficiency. The V  
control architecture is used to achieve  
MARKING  
DIAGRAM  
unmatched transient response, the best overall regulation and the  
simplest loop compensation.  
14  
Additionally, the CS5212 provides overcurrent protection,  
undervoltage lockout, soft start, built–in adaptive non–overlap, and an  
adjustable fixed frequency range of 150 kHz to 750 kHz, which gives  
the designer more flexibility to make efficiency and component size  
trade offs. The CS5212 will also operate over a 3.1 V to 7.0 V range  
using either single or dual input voltage.  
SOIC–14  
D SUFFIX  
CASE 751A  
CS5212x  
AWLYWW  
1
x
A
= E or G  
= Assembly Location  
WL, L  
YY, Y  
= Wafer Lot  
= Year  
Features  
Switching Regulator Controller  
WW, W = Work Week  
N–Channel Synchronous Buck Design  
V Control Topology  
200 ns Transient Response  
Programmable Fixed Frequency of 150 kHz–750 kHz  
1.0 V 1.5% Internal Reference  
Lossless Inductor Sensing Overcurrent Protection  
Hiccup Mode Short Circuit Protection  
Programmable Soft Start  
PIN CONNECTIONS  
2
1
GATE(H)  
PGND  
GATE(L)  
BST  
LGND  
V
C
V
IS+  
IS–  
FFB  
V
FB  
COMP  
SGND  
V
R
CC  
OSC  
40 ns GATE Rise and Fall Times (3.3 nF Load)  
70 ns Adaptive FET Nonoverlap Time  
Differential Remote Sense Capability  
Available in Industrial and Commerical Temperature Grades  
System Power Management  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 13 of this data sheet.  
3.3 V Operation  
Undervoltage Lockout  
On/Off Control Through Use of the COMP Pin  
Semiconductor Components Industries, LLC, 2002  
1
Publication Order Number:  
May, 2002 – Rev. 2  
CS5212/D  
CS5212  
V
IN  
3.3 V  
C6  
C7  
C8 100 µF/10 V × 3  
D5  
BAT54S  
+
+
+
C4  
0.1 µF  
TP2  
GATE(H)  
D6  
BAT54S  
D2  
BAT54S  
TP1  
SWNODE  
C22  
0.1 µF  
6.5 mR  
ETQP6F2R9LB  
Q1  
TP5  
V
OUT  
BST  
TP4  
COMP  
L1  
2.9 µH  
C10 C20 C21  
R5  
+
+
+
+
100 µF/10 V  
× 2  
C9  
4.7 k  
TP3  
GATE(L)  
C15  
470 pF  
GND  
R9  
10  
C11  
0.1 µF  
R13  
10  
Q2  
R7  
TBD*  
U1  
1
2
3
4
5
6
7
14  
13  
12  
11  
10  
9
GATE(H)  
BST  
PGND  
C3  
0.1 µF  
GATE(L)  
LGND  
V
C
C16  
GN2  
GND  
V
V
IS+  
IS–  
FFB  
FB  
CS5212  
C2  
0.1 µF  
0.1 µF  
R6  
4.7 k  
COMP  
SGND  
V
CC  
C19  
1.0 µF  
8
R
OSC  
R8  
10  
C5  
680 pF  
C1  
0.47 µF  
R2  
10  
TP6  
SENSE+  
R1  
51 k  
R3  
1.5 k 1%  
R4  
1.0 k 1%  
TP7  
SENSE–  
*Refer to Rpullup Value Selection section for value needed.  
Figure 1. Application Diagram, 3.3 V to 1.5 V/8.0 A Converter with Differential Remote Sense  
MAXIMUM RATINGS*  
Rating  
Value  
150  
Unit  
°C  
Operating Junction Temperature, T  
Lead Temperature Soldering:  
J
Reflow: (SMD styles only) (Note 1)  
230 peak  
–65 to +150  
°C  
Storage Temperature Range, T  
°C  
S
Package Thermal Resistance:  
30  
125  
°C/W  
°C/W  
Junction–to–Case, R  
Junction–to–Ambient, R  
θ
JC  
θ
JA  
ESD Susceptibility:  
Human Body Model  
Machine Model  
2.0  
200  
kV  
V
JEDEC Moisture Sensitivity  
1. 60 second maximum above 183°C.  
*The maximum package power dissipation must be observed.  
1
http://onsemi.com  
2
CS5212  
MAXIMUM RATINGS  
Pin Name  
Pin Symbol  
V
MAX  
V
MIN  
I
I
SINK  
SOURCE  
IC Power Input  
V
6.0 V  
16 V  
20 V  
–0.3 V  
–0.3 V  
–0.3 V  
N/A  
50 mA DC  
CC  
Power input for the low side driver  
V
N/A  
N/A  
1.5 A Peak, 200 mA DC  
1.5 A Peak, 200 mA DC  
C
Power Supply input for the high  
side driver  
BST  
Compensation Capacitor  
Voltage Feedback Input  
Oscillator Resistor  
COMP  
6.0 V  
6.0 V  
6.0 V  
6.0 V  
20 V  
–0.3 V  
–0.3 V  
–0.3 V  
–0.3 V  
1.0 mA  
1.0 mA  
1.0 mA  
1.0 mA  
1.0 mA  
1.0 mA  
1.0 mA  
1.0 mA  
V
FB  
R
OSC  
Fast Feedback Input  
High–Side FET Driver  
V
FFB  
GATE(H)  
–0.3 V  
–2.0 V for 50 ns  
1.5 A Peak  
200 mA DC  
1.5 A Peak  
200 mA DC  
Low–Side FET Driver  
GATE(L)  
16 V  
–0.3 V  
–2.0 V for 50 ns  
1.5 A Peak  
200 mA DC  
1.5 A Peak  
200 mA DC  
Positive Current Sense  
Negative Current Sense  
Power Ground  
IS+  
6.0 V  
6.0 V  
0.3 V  
0 V  
–0.3 V  
–0.3 V  
–0.3 V  
0 V  
1.0 mA  
1.0 mA  
1.0 mA  
1.0 mA  
N/A  
IS–  
PGND  
LGND  
SGND  
1.5 A Peak, 200 mA DC  
100 mA  
Logic Ground  
N/A  
Sense Ground  
0.3 V  
–0.3 V  
1.0 mA  
1.0 mA  
ELECTRICAL CHARACTERISTICS (–40°C < T < 85°C (CS5212E); 0°C < T < 70°C (CS5212G); –40°C < T < 125°C;  
A
A
J
3.1 V < V < 3.5 V; 3.1 V < V < 7.0 V; 4.5 V < BST < 20 V; C  
= C  
= 3.3 nF; R  
= 51 k; C  
= 0.1 µF, unless other-  
CC  
C
GATE(H)  
GATE(L)  
OSC  
COMP  
wise specified.)  
Characteristic  
Error Amplifier  
Bias Current  
Test Conditions  
Min  
Typ  
Max  
Unit  
V
FB  
V
FB  
V
FB  
V
FB  
= 0 V  
15  
15  
0.1  
30  
1.0  
60  
60  
µA  
µA  
COMP Source Current  
COMP SINK Current  
Open Loop Gain  
= 0.8 V  
= 1.2 V  
30  
µA  
98  
dB  
Unity Gain Bandwidth  
PSRR @ 1.0 kHz  
C = 0.1 µF  
50  
kHz  
dB  
70  
Output Transconductance  
Output Impedance  
Reference Voltage  
32  
mmho  
MΩ  
V
2.5  
0.992  
–0.1 V < SGND < 0.1 V,  
0.977  
1.007  
COMP = V , Measure V to SGND  
FB  
FB  
COMP Max Voltage  
COMP Min Voltage  
GATE(H) and GATE(L)  
High Voltage (AC)  
V
V
= 0.8 V  
= 1.2 V  
2.5  
3.0  
0.1  
V
V
FB  
FB  
0.2  
GATE(L)  
GATE(H)  
0.5 nF < C  
V
– 0.5  
V
V
C
BST – 0.5  
= C  
< 10 nF. Note 2.  
GATE(H)  
GATE(L)  
Low Voltage (AC)  
2. GBD.  
GATE(L) or GATE(H)  
0.5 nF < C ; C  
0.5  
V
< 10 nF. Note 2.  
GATE(H) GATE(L)  
http://onsemi.com  
3
CS5212  
ELECTRICAL CHARACTERISTICS (continued) (–40°C < T < 85°C (CS5212E); 0°C < T < 70°C (CS5212G); –40°C < T < 125°C;  
A
A
J
3.1 V < V < 3.5 V; 3.1 V < V < 7.0 V; 4.5 V < BST < 20 V; C  
= C  
= 3.3 nF; R  
= 51 k; C  
= 0.1 µF, unless other-  
CC  
C
GATE(H)  
GATE(L)  
OSC  
COMP  
wise specified.)  
Characteristic  
Test Conditions  
Min  
Typ  
Max  
Unit  
GATE(H) and GATE(L)  
Rise Time  
V
V
= BST = 7.0 V, Measure:  
0.7 V < GATE(L) < 6.3 V,  
0.7 V < GATE(H) < 6.3 V  
40  
40  
80  
ns  
C
Fall Time  
= BST = 7.0 V, Measure:  
80  
ns  
C
0.7 V < GATE(L) < 6.3 V,  
0.7 V < GATE(H) < 6.3 V  
GATE(H) to GATE(L) Delay  
GATE(L) to GATE(H) Delay  
GATE(H)/(L) Pull–Down  
Overcurrent Protection  
GATE(H) < 2.0 V, GATE(L) > 2.0 V  
GATE(L) < 2.0 V, GATE(H) > 2.0 V  
Resistance to PGND  
40  
40  
20  
70  
70  
50  
110  
110  
115  
ns  
ns  
KΩ  
OVC Comparator Offset Voltage  
IS+ Bias Current  
0 V < IS+ < V , 0 V < IS– < V  
54  
60  
0.1  
0.1  
0.25  
5.0  
66  
1.0  
1.0  
0.30  
8.0  
mV  
µA  
µA  
V
CC  
CC  
0 V < IS+ < V  
–1.0  
–1.0  
0.20  
2.0  
CC  
CC  
IS– Bias Current  
0 V < IS– < V  
COMP Discharge Threshold  
COMP Discharge Current in OVC  
Fault Mode  
COMP = 1.0 V  
µA  
PWM Comparator  
Transient Response  
PWM Comparator Offset  
COMP = 0 – 1.5 V, V  
, 20 mV overdrive  
100  
200  
ns  
V
FFB  
V
FB  
= V  
= 0 V; Increase COMP until  
0.35  
0.40  
0.45  
FFB  
GATE(H) starts switching  
Artificial Ramp  
Duty Cycle = 90%  
V = 0 V  
FFB  
40  
70  
0.1  
100  
1.0  
1.1  
200  
mV  
µA  
V
V
Bias Current  
Input Range  
FFB  
FFB  
V
Note 3.  
Minimum Pulse Width  
Oscillator  
ns  
Switching Frequency  
Switching Frequency  
Switching Frequency  
R
R
R
= 18 k  
= 51 k  
= 115 k  
600  
240  
120  
1.21  
750  
300  
150  
1.25  
900  
360  
180  
1.29  
kHz  
kHz  
kHz  
V
OSC  
OSC  
OSC  
R
Voltage  
OSC  
General Electrical Specifications  
Supply Current  
V
CC  
COMP = 0 V (no switching)  
COMP = 0 V (no switching)  
GATE(H) Switching, COMP Charging  
GATE(H) Not Switching, COMP Not Charging  
Start–Stop  
5.0  
2.0  
8.0  
3.0  
mA  
mA  
V
BST/V Supply Current  
C
Start Threshold  
Stop Threshold  
Hysteresis  
2.7  
2.6  
75  
2.8  
2.9  
2.7  
2.8  
V
100  
0.15  
125  
1.00  
mV  
mA  
Sense Ground Current  
Note 4.  
3. GBD.  
4. Recommended maximum operating voltage between the three grounds is 200 mV.  
http://onsemi.com  
4
CS5212  
PACKAGE PIN DESCRIPTION  
PIN NO.  
PIN SYMBOL  
GATE(H)  
BST  
FUNCTION  
1
2
3
4
5
6
High Side Switch FET driver pin. Capable of delivering peak currents of 1.0 A.  
Power supply input for the high side driver.  
LGND  
Reference ground. All control circuits are referenced to this pin. IC substrate connection.  
Input for the PWM comparator.  
V
FFB  
V
FB  
Error amplifier input.  
COMP  
Error Amp output. PWM Comparator reference input. A capacitor to LGND provides error amp  
compensation.  
7
SGND  
Internal reference is connected to this ground. Connect directly at the load for ground remote  
sensing.  
8
9
R
A resistor from this pin to SGND sets switching frequency.  
OSC  
V
Input Power Supply Pin. It supplies power to control circuitry. A 0.1 µF Decoupling cap is  
CC  
recommended.  
10  
11  
12  
13  
14  
IS–  
IS+  
Negative input for overcurrent comparator.  
Positive input for overcurrent comparator.  
V
C
Power supply input for the low side driver.  
GATE(L)  
PGND  
Low Side Synchronous FET driver pin. Capable of delivering peak currents of 1.0 A.  
High Current ground for the GATE(H) and GATE(L) pins.  
0.5 V  
BST  
Reset Dominant  
PWM Comparator  
OSC  
+
V
FFB  
Σ
R
Q
GATE(H)  
COMP  
ART Ramp  
R
OSC  
S
Q
Error Amp  
V
FB  
PWM FF  
V
C
+
+
Fault  
1.0 V  
GATE(L)  
PGND  
SGND  
100 % DC  
Comparator  
+
0.8 V  
R
OSC  
UVLO  
Comparator  
+
Set Dominant  
V
START  
UVLO  
Fault  
Q
S
V
CC  
OC  
Comparator  
+
IS+  
+
60 mV  
R
Q
0.25 V  
IS–  
COMP Discharge COMP  
LGND  
5.0 µA  
Figure 2. Block Diagram  
http://onsemi.com  
5
CS5212  
THEORY OF OPERATION  
The CS5212 is  
fixed–frequency, low–voltage buck controller using the V  
control method. It also provides overcurrent protection,  
undervoltage lockout, soft start and built–in adaptive  
non–overlap.  
a
synchronous, programmable  
The main purpose of this “slow” feedback loop is to provide  
2
DC accuracy. Noise immunity is significantly improved,  
because the error amplifier bandwidth can be rolled off at a  
low frequency. Enhanced noise immunity improves remote  
sensing of the output voltage, since the noise associated with  
long feedback traces can be effectively filtered.  
V2 Control Method  
Line and load regulations are drastically improved  
because there are two independent voltage loops. A voltage  
mode controller relies on a change in the error signal to  
compensate for a deviation in either line or load voltage.  
This change in the error signal causes the output voltage to  
change corresponding to the gain of the error amplifier,  
which is normally specified as line and load regulation. A  
current mode controller maintains fixed error signal under  
deviation in the line voltage, since the slope of the ramp  
signal changes, but still relies on a change in the error signal  
2
The V method of control uses a ramp signal generated by  
the ESR of the output capacitors. This ramp is proportional  
to the AC current through the main inductor and is offset by  
the value of the DC output voltage. This control scheme  
inherently compensates for variations in either line or load  
conditions, since the ramp signal is generated from the  
output voltage itself. This control scheme differs from  
traditional techniques such as voltage mode, which  
generates an artificial ramp, and current mode, which  
generates a ramp from inductor current.  
2
for a deviation in load. The V method of control maintains  
a fixed error signal for both line and load variations, since  
both line and load affect the ramp signal.  
PWM Comparator  
+
GATE(H)  
Constant Frequency Operation  
GATE(L)  
The CS5212 uses a constant frequency, trailing edge  
modulation architecture for generating PWM signal. During  
normal operation, the oscillator generates a narrow pulse at  
the beginning of each switching cycle to turn on the main  
switch. The main switch will be turned off when the ramp  
signal intersects with the output of the error amplifier  
(COMP pin voltage). Therefore, the switch duty cycle can  
be modified to regulate the output voltage to the desired  
value as line and load conditions change.  
The major advantage of constant frequency operation is  
that the component selections, especially the magnetic  
component design, become very easy. The oscillator  
frequency of CS5212 is programmable from 150 kHz to  
Output  
Voltage  
Feedback  
Ramp Signal  
Error Amplifier  
Error Signal  
Reference  
Voltage  
+
COMP  
Figure 3. V2 Control Block Diagram  
As illustrated in Figure 3, the output voltage is used to  
generate both the error signal and the ramp signal. Since the  
ramp signal is simply the output voltage, it is affected by any  
change in the output regardless of the origin of the change.  
The ramp signal also contains the DC portion of the output  
voltage, which allows the control circuit to drive the main  
switch to 0% or 100% duty cycle as required.  
A change in line voltage changes the current ramp in the  
inductor, affecting the ramp signal, which causes the V  
control scheme to compensate the duty cycle. Since the  
change in the inductor current modifies the ramp signal, as  
in current mode control, the V control scheme has the same  
750 kHz using an external resistor connected from the R  
pin to ground.  
OSC  
Startup  
If there are no fault conditions and the fault latch is reset,  
the error amplifier will start charging the COMP pin  
capacitor after the CS5212 is powered up. The output of the  
error amplifier (COMP voltage) will ramp up linearly. The  
COMP capacitance and the source current of the error  
amplifier determine the slew rate of COMP voltage. The  
output of the error amplifier is connected internally to the  
inverting input of the PWM comparator and it is compared  
2
2
advantages in line transient response.  
A change in load current will have an effect on the output  
voltage, altering the ramp signal. A load step immediately  
changes the state of the comparator output, which controls  
the main switch. Load transient response is determined only  
by the comparator response time and the transition speed of  
the main switch. The reaction time to an output load step has  
no relation to the crossover frequency of the error signal  
loop, compared to traditional control methods.  
with the V  
pin voltage plus 0.5 V offset at the  
FFB  
non–inverting input of the PWM comparator. Since V  
FFB  
voltage is zero before the startup, the PWM comparator  
output will stay high until the COMP pin voltage hits 0.5 V.  
There is no switching action while the PWM comparator  
output is high.  
After the COMP voltage exceeds the 0.5 V offset, the  
output of PWM comparator toggles and releases the PWM  
latch. The narrow pulse generated by the oscillator at the  
The error signal loop can have a low crossover frequency,  
since transient response is handled by the ramp signal loop.  
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6
CS5212  
beginning of the next oscillator cycle will set the latch so that  
If the values of R and C are chosen such that:  
the main switch can be turned on and the regulator output  
voltage ramps up. When the output voltage achieves a level  
set by the COMP voltage, the main switch will be turned off.  
L
+ RC  
R
L
Then the voltage across the capacitor C will be:  
2
The V control loop will adjust the main switch duty cycle  
V
+ R I  
L L  
C
as required to ensure the regulator output voltage tracks the  
COMP voltage. Since the COMP voltage increases  
gradually, the soft start can be achieved. The start–up period  
ends when the output voltage reaches the level set by the  
external resistor divider.  
Therefore, if the time constant of the RC network is equal  
to that of the inductor, the voltage across the capacitor is  
proportional to the inductor current by a factor of the  
inductor ESR. In practice, the user should ensure that under  
all component tolerances, the RC time constant is larger than  
the L/R time constant. This will keep the high frequency  
gain for V (s)/I (s) less than the low frequency gain, and  
avoid unnecessary OCP tripping during short duration  
overcurrent situations.  
Compared with conventional resistor sensing, the  
inductor ESR current sensing technique is lossless, but is not  
as accurate due to variation in the ESR from inductor to  
inductor and over temperature. For typical inductor ESR, the  
0.39%/°C positive temperature coefficient will reduce the  
current limit at high temperature, and will help prevent  
thermal runaway, but will force an increased design target at  
room temperature. This technique can be more accurate than  
using a PCB trace, since PCB copper thickness can vary  
10–20%, compared to 1% variation in wire diameter  
thickness typical of inductors.  
Output Enable  
Since there can be no switching until the COMP pin  
exceeds the 0.5 V offset built into the PWM comparator, the  
COMP pin can also be used for an enable function. Hold the  
COMP pin below 0.4 V with an open collector circuit to  
disable the output. When the COMP pin is released to enable  
startup, the user must ensure there is no leakage current from  
the enable circuit into COMP. During normal operation the  
COMP output is driven with only 5.0 µA to 30 µA internally.  
C
L
Hiccup Mode Overcurrent Protection  
Under normal load conditions, the voltage across the IS+  
and IS– pins is less than the 60 mV overcurrent threshold. If  
the threshold is exceeded, the overcurrent fault latch is set,  
the high side gate driver is forced low, and the COMP pin is  
discharged with 5.0 µA. There is no switching until the  
COMP voltage drops below a 0.25 V threshold. Then, the  
fault latch is cleared and a soft start is initiated. The low  
effective duty cycle during hiccup overcurrent greatly  
reduces component stress for an extended fault.  
Remote Voltage Sensing  
The CS5212 has the capability to sense the voltage when  
the load is located far away from the regulator. The SGND  
pin is dedicated to the differential remote sensing. The  
negative remote sense line is connected to SGND pin  
directly, while the positive remote sense line is usually  
connected to the top of the feedback voltage divider. To  
prevent over–voltage condition caused by open remote  
sense lines, the divider should also be locally connected to  
the output of the regulator through a low value resistor. That  
resistor is used to compensate for the voltage drop across the  
output power cables.  
Inductor Current Sensing  
Besides using a current sense resistor to sense inductor  
current, CS5212 provides the users with the possibility of  
using loss–less inductor sensing technique. This sensing  
technique utilizes the Equivalent Series Resistance (ESR) of  
the inductor to sense the current. The output current is  
sensed through an RC network in parallel with the inductor  
as shown in Figure 4. The voltage across the small capacitor  
is then fed to the OC comparator.  
IS+  
IS–  
V
IN  
C
R
Q1  
L
RL  
C
O
Q2  
Figure 4. Inductor Current Sensing  
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7
CS5212  
APPLICATIONS INFORMATION  
2
APPLICATIONS AND COMPONENT SELECTION  
P + I  
RMS  
  R  
L
Inductor Component Selection  
Input Capacitor Selection and Considerations  
The input capacitor is used to reduce the current surges  
caused by conduction of current of the top pass transistor  
charging the PWM inductor.  
The input current is pulsing at the switching frequency  
going from 0 to peak current in the inductor. The duty factor  
will be a function of the ratio of the input to output voltage  
and of the efficiency.  
The output inductor may be the most critical component  
in the converter because it will directly effect the choice of  
other components and dictate both the steady–state and  
transient performance of the converter. When selecting an  
inductor the designer must consider factors such as DC  
current, peak current, output voltage ripple, core material,  
magnetic saturation, temperature, physical size, and cost  
(usually the primary concern).  
In general, the output inductance value should be as low  
and physically small as possible to provide the best transient  
response and minimum cost. If a large inductance value is  
used, the converter will not respond quickly to rapid changes  
in the load current. On the other hand, too low an inductance  
value will result in very large ripple currents in the power  
components (MOSFETs, capacitors, etc) resulting in  
increased dissipation and lower converter efficiency. Also,  
increased ripple currents will force the designer to use  
higher rated MOSFETs, oversize the thermal solution, and  
use more, higher rated input and output capacitors – the  
converter cost will be adversely effected.  
V
V
1
Eff  
O
I
DF +  
 
The RMS value of the ripple into the input capacitors can  
now be calculated:  
Ǹ
2
I
+ I  
OUT  
DF * DF  
IN(RMS)  
The input RMS is maximum at 50% DF, so selection of the  
possible duty factor closest to 50% will give the worst case  
dissipation in the capacitors. The power dissipation of the  
input capacitors can be calculated by multiplying the square  
of the RMS current by the ESR of the capacitor.  
Output Capacitor  
One method of calculating an output inductor value is to  
size the inductor to produce a specified maximum ripple  
current in the inductor. Lower ripple currents will result in  
less core and MOSFET losses and higher converter  
efficiency. The following equation may be used to calculate  
the minimum inductor value to produce a given maximum  
The output capacitor filters output inductor ripple current  
and provides low impedance for load current changes. The  
effect of the capacitance for handling the power supply  
induced ripple will be discussed here. Effects of load  
transient behavior can be considered separately.  
The principle consideration for the output capacitor is the  
ripple current induced by the switches through the inductor.  
ripple current (α I  
). The inductor value calculated by  
O,MAX  
this equation is a minimum because values less than this will  
produce more ripple current than desired. Conversely,  
higher inductor values will result in less than the maximum  
ripple current.  
This ripple current was calculated as I  
in the above  
AC  
discussion of the inductor. This ripple component will  
induce heating in the capacitor by a factor of the RMS  
current squared multiplied by the ESR of the output  
capacitor section. It will also create output ripple voltage.  
The ripple voltage will be a vector summation of the ripple  
current times the ESR of the capacitor, plus the ripple current  
integrating in the capacitor, and the rate of change in current  
times the total series inductance of the capacitor and  
connections.  
The inductor ripple current acting against the ESR of the  
output capacitor is the major contributor to the output ripple  
voltage. This fact can be used as a criterion to select the  
output capacitor.  
Lo  
MIN  
+ (Vin * Vout) @ Voutń(a @ I  
O,MAX  
@ Vin @ f )  
SW  
α is the ripple current as a percentage of the maximum  
output current (α = 0.15 for ±15%, α = 0.25 for ±25%, etc)  
and f is the switching frequency. If the minimum inductor  
sw  
value is used, the inductor current will swing ± α/2% about  
Iout. Therefore, the inductor must be designed or selected  
such that it will not saturate with a peak current of (1 + α/2)  
I
.
O,MAX  
Power dissipation in the inductor can now be calculated  
from the RMS current level. The RMS of the AC component  
of the inductor is given by the following relationship:  
V
+ I   C  
PP ESR  
PP  
I
Ǹ
The power dissipation in the output capacitor can be  
calculated from:  
PP  
12  
I
+
AC  
where I = α I  
.
2
PP  
O,MAX  
P + I  
AC  
  C  
ESR  
The total I  
of the current will be calculated from:  
RMS  
where:  
= AC RMS of the inductor  
Ǹ
2
2
I
+
I
) I  
RMS  
OUT AC  
I
AC  
C
= Effective series resistance of the output capacitor  
ESR  
The power dissipation for the inductor can be determined  
from:  
network.  
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8
CS5212  
MOSFET & Heatsink Selection  
may be specified in the data sheet or approximated from the  
gate–charge curve as shown in the Figure 5.  
Power dissipation, package size, and thermal solution  
drive MOSFET selection. To adequately size the heat sink,  
the design must first predict the MOSFET power dissipation.  
Once the dissipation is known, the heat sink thermal  
impedance can be calculated to prevent the specified  
maximum case or junction temperatures from being exceeded  
at the highest ambient temperature. Power dissipation has two  
primary contributors: conduction losses and switching losses.  
The control or upper MOSFET will display both switching  
and conduction losses. The synchronous or lower MOSFET  
will exhibit only conduction losses because it switches into  
nearly zero voltage. However, the body diode in the  
synchronous MOSFET will suffer diode losses during the  
non–overlap time of the gate drivers.  
Q
+ Q  
) Q  
gs2 gd  
switch  
I
D
V
GATE  
V
GS_TH  
For the upper or control MOSFET, the power dissipation  
can be approximated from:  
Q
Q
Q
V
DRAIN  
GS1  
GS2  
GD  
2
P
+ (I  
@ R  
)
DS(on)  
D,CONTROL  
RMS,CNTL  
@ Q ńI @ V @ f  
Figure 5. MOSFET Switching Characteristics  
) (I  
)
Lo,MAX  
switch g IN SW  
) (Q  
ń2 @ V @ f  
) ) (V @ Q  
@ f )  
RR SW  
oss  
IN SW IN  
I is the output current from the gate driver IC.  
g
V
is the input voltage to the converter.  
is the switching frequency of the converter.  
is the MOSFET total gate charge to obtain R  
IN  
The first term represents the conduction or IR losses when  
the MOSFET is ON while the second term represents the  
switching losses. The third term is the losses associated with  
the control and synchronous MOSFET output charge when  
the control MOSFET turns ON. The output losses are caused  
by both the control and synchronous MOSFET but are  
dissipated only in the control FET. The fourth term is the loss  
due to the reverse recovery time of the body diode in the  
synchronous MOSFET. The first two terms are usually  
adequate to predict the majority of the losses.  
f
sw  
Q
G
.
DS(on)  
Commonly specified in the data sheet.  
V is the gate drive voltage.  
g
Q
Q
is the reverse recovery charge of the lower MOSFET.  
is the MOSFET output charge specified in the data  
sheet.  
RR  
oss  
For the lower or synchronous MOSFET, the power  
dissipation can be approximated from:  
2
P
+ (I  
RMS,SYNCH  
@ R  
)
DS(on)  
Where I  
is the RMS value of the trapezoidal  
D,SYNCH  
) (Vf  
RMS,CNTL  
current in the control MOSFET:  
@ I  
ń2 @ t_nonoverlap @ f  
)
diode O,MAX SW  
Ǹ
2
I
+ D @ [(I  
) I  
@ I  
RMS,CNTL  
Lo,MAX Lo,MAX Lo,MIN  
The first term represents the conduction or IR losses when  
the MOSFET is ON and the second term represents the diode  
losses that occur during the gate non–overlap time.  
All terms were defined in the previous discussion for the  
control MOSFET with the exception of:  
2
)ń3]  
1ń2  
) I  
Lo,MIN  
I
is the maximum output inductor current:  
Lo,MAX  
I
+ I  
O,MAX  
ń2 ) DI ń2  
Lo  
Lo,MAX  
Ǹ
I
+ 1 * D  
RMS,SYNCH  
I
I
is the minimum output inductor current:  
Lo,MIN  
O,MAX  
I
+ I  
ń2 * DI ń2  
2
2 1ń2  
)ń3]  
Lo,MIN  
O,MAX  
Lo  
@ [(I  
Lo,MAX  
) I  
@ I  
) I  
Lo,MIN  
Lo,MAX Lo,MIN  
is the maximum converter output current.  
where:  
Vf  
D is the duty cycle of the converter:  
is the forward voltage of the MOSFET’s intrinsic  
diode at the converter output current.  
diode  
D + V  
ńV  
OUT IN  
t_nonoverlap is the non–overlap time between the upper  
and lower gate drivers to prevent cross conduction. This  
time is usually specified in the data sheet for the control  
IC.  
I is the peak–to–peak ripple current in the output  
inductor of value Lo:  
Lo  
DI + (V * V  
Lo IN  
) @ Dń(Lo @ f )  
OUT SW  
When the MOSFET power dissipations are known, the  
designer can calculate the required thermal impedance to  
maintain a specified junction temperature at the worst case  
ambient operating temperature  
R
is the ON resistance of the MOSFET at the  
DS(on)  
applied gate drive voltage.  
is the post gate threshold portion of the  
Q
switch  
gate–to–source charge plus the gate–to–drain charge. This  
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9
CS5212  
q
T
t (T * T )ńP  
J A D  
The COMP output current range is given in the data sheet  
and will affect the ramp–up time. The value of the capacitor  
on the COMP pin will have an effect on the loop response  
and the transient response of the converter. Transient  
response can be enhanced by the addition of a parallel  
combination of a resistor and capacitor between the COMP  
pin and the comp capacitor.  
where;  
θ is the total thermal impedance (θ + θ ).  
T
JC  
SA  
θ
θ
is the junction–to–case thermal impedance of the  
MOSFET.  
is the sink–to–ambient thermal impedance of the  
JC  
SA  
heatsink assuming direct mounting of the MOSFET (no  
thermal “pad” is used).  
ROSC Selection  
The switching frequency is programmed by selecting the  
T
is the specified maximum allowed junction  
temperature.  
J
resistor connected between the R  
pin and SGND (pin 7).  
OSC  
The grounded side of this resistor should be directly  
connected to the SGND pin, without any other currents  
flowing between the bottom of the resistor and the pin. Also,  
avoid running any noisy signals under the resistor, since  
injected noise could cause frequency jitter. The graph in  
Figure NO TAG shows the required resistance to program  
the frequency. Below 500 kHz, the following formula is  
accurate:  
T is the worst case ambient operating temperature.  
For TO–220 and TO–263 packages, standard FR–4  
copper clad circuit boards will have approximate thermal  
A
resistances (θ ) as shown below:  
SA  
Pad Size  
(in /mm )  
Single–Sided  
2
2
1 oz. Copper  
60–65°C/W  
55–60°C/W  
50–55°C/W  
45–50°C/W  
38–42°C/W  
33–37°C/W  
0.5/323  
R + 17544ńf  
SW  
* 4 kW  
0.75/484  
1.0/645  
where f is the switching frequency in kHz.  
SW  
1.5/968  
140  
120  
100  
80  
2.0/1290  
2.5/1612  
As with any power design, proper laboratory testing  
should be performed to insure the design will dissipate the  
required power under worst case operating conditions.  
Variables considered during testing should include  
maximum ambient temperature, minimum airflow,  
maximum input voltage, maximum loading, and component  
60  
40  
variations (i.e. worst case MOSFET R ). Also, the  
DS(on)  
20  
inductors and capacitors share the MOSFET’s heatsinks and  
will add heat and raise the temperature of the circuit board  
and MOSFET. For any new design, its advisable to have as  
much heatsink area as possible – all too often new designs  
are found to be too hot and require re–design to add  
heatsinking.  
0
0
100 200 300 400 500 600 700 800  
Frequency (kHz)  
Figure 6. Frequency vs. ROSC  
Differential Remote Sense Operation  
Compensation Capacitor Selection  
The ability to implement fully differential remote sense is  
provided by the CS5212. The positive remote sense is  
implemented by bringing the output remote sense  
connection to the positive load connection. A low value  
resistor is connected from Vout to the feedback point at the  
regulator to provide feedback in the instance when the  
remote sense point is not connected.  
The negative remote sense connection is provided by  
connecting the SGND of the CS5212 to the negative of the  
load return. Again, a low value resistor should be connected  
between SGND and LGND at the regulator to provide  
feedback in the instance when the remote sense point is not  
connected. The maximum voltage differential between the  
three grounds for this part is 200 mV.  
The nominal output current capability of the error amp is  
30 µA. This current charging the capacitor on the COMP pin  
is used as soft start for the converter. The COMP pin is going  
to ramp up to a voltage level that is within 70 mV of what  
V
FFB  
is going to be when in regulation. This is the voltage  
that will determine the soft start. Therefore, the COMP  
capacitor can be established by the following relationship:  
soft start  
FFB(REG)  
C + 30 mA   
V
where:  
soft start = output ramp–up time  
= V voltage when in regulation  
V
FFB(REG)  
FFB  
30 µA = COMP output current, typ.  
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10  
CS5212  
Feedback Divider Selection  
Maximum Frequency Operation  
The feedback voltage measured at V during normal  
The minimum pulse width may limit the maximum  
operating frequency. The duty factor, given by the  
output/input voltage ratio, multiplied by the period  
determines the pulse width during normal operation. This  
pulse width must be greater than 200 ns, or duty cycle jitter  
could become excessive. For low pulse widths below 300 ns,  
FB  
regulation will be 1.0 V. This voltage is compared to an  
internal 1.0 V reference and is used to regulate the output  
voltage. The bias current into the error amplifier is 1.0 µA  
max, so select the resistor values so that this current does not  
add an excessive offset voltage.  
external slope compensation should be added to the V  
FFB  
VFFB Feedback Selection  
To take full advantage of the V control scheme, a small  
amount of output ripple must be fed back to the V  
pin to increase the PWM ramp signal and improve stability.  
50 mV of added ramp at the V pin is typically enough.  
2
FFB  
pin,  
FFB  
typically 50 mV. For most application, this requirement is  
simple to achieve and the V can be connected directly to  
Current Sense Component Selection  
The current limit threshold is set by sensing a 60 mV  
voltage differential between the IS+ and IS– pins. Referring  
to Figure 8, the time constant of the R2,C1 filter should be  
set larger than the L/R1 time constant under worst case  
tolerances, to prevent overshoot in the sensed voltage and  
tripping the current limit too low. Resistor R3 of value equal  
to R2 is added for bias current cancellation. R2 and R3  
should not be made too large, to reduce errors from bias  
current offsets. For typical L/R time constants, a 0.1 µF  
capacitor for C1 will allow R2 to be between 1.0 k and 10 k.  
The current limit without R4 and R5, which are optional,  
is given by 60 mV/R1, where R1 is the internal resistance of  
the inductor, obtained from the manufacturer. The addition  
of R5 can be used to decrease the current limit to a value  
given by:  
FFB  
the V pin. There are some application that have to meet  
FB  
stringent load transient requirements. One of the key factor  
in achieving tight dynamic voltage regulation is low ESR.  
Low ESR at the regulator output results in low output  
voltage ripple. This situation could result in increase noise  
sensitivity and a potential for loop instability. In applications  
where the output ripple is not sufficient, the performance of  
the CS5212 can be improved by adding a fixed amount  
external ramp compensation to the V  
pin. Refer to Figure  
FFB  
7, the amount of ramp at the V  
pin depends on the switch  
FFB  
node Voltage, Feedback Voltage, R1 and C2.  
Vramp + (Vsw * V )   tonń(R1   C2)  
FB  
where:  
Vramp = amount of ramp needed;  
Vsw = switch note voltage;  
I
+ (60 mV * (V  
  R3ń(R3 ) R5))ńR1  
OUT  
LIM  
V
FB  
= voltage feedback, 1 V;  
where V  
is the output voltage.  
OUT  
ton = switch on–time.  
Similiarly, omitting R5 and adding R4 will increase the  
current limit to a value given by:  
To minimize the lost in efficiency R1 resistance should be  
large, typically 100 k or larger. With R1 chosen, C2 can be  
determined by the following;  
I
+ 60 mVńR1   (1 ) R2ńR4)  
LIM  
Essentially, R4 or R5 are used to increase or decrease the  
inductor voltage drop which corresponds to 60 mV at the IS+  
and IS– pins.  
C2 + (Vsw * V )   tonń(R1   Vramp)  
FB  
C1 is used as a bypass capacitor and its value should be  
equal to or greater than C2.  
IS–  
Vsw  
R3  
R5  
60 mV Trip  
IS+  
R1  
C1  
V
FFB  
R2  
C1  
C2  
R2  
1.0 k  
R4  
Switching  
Node  
V
FB  
V
OUT  
L1  
R1  
Figure 7. Small RC Filter Providing the Proper Voltage  
Ramp at the Beginning of Each On–Time Cycle  
L
Figure 8. Current Limit  
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11  
CS5212  
Boost Component Selection for Upper and Lower  
FET Gate Drive  
output cannot provide sufficient Vgs to turn on the  
MOSFET. A resistor from GATE(H) to BST allows  
bypassing of the GATE(H) driver until the boost circuitry is  
charged. The time constant, set by the pull–up resistor and  
the Cin of the top MOSFET, must be fast enough to turn on  
the MOSFET during the switching period. The following  
equation is used to determine Rpull–up:  
The boost (BST) pin provides for application of a higher  
voltage to drive the upper FET. This voltage may be  
provided by a fixed higher voltage or it may be generated  
with a boost capacitor and charging diodes, as shown in  
Figure 1. The voltage in the boost configuration would be  
the summation of the voltage from the charging diodes and  
the output voltage swing. Care must be taken to keep the  
peak voltage with respect to ground less than 20 V peak. The  
capacitor value should be ten times larger than the  
capacitance of the top FET. The boost circuit requires a  
modification to achieve startup. See Rpull–up Selection for  
boost circuit startup.  
1
Rpull–up t  
(Cin   f  
)
SW  
where f is the switching frequency.  
SW  
Choosing components according to this equation will  
insure that approximately 63% of the boost voltage will be  
applied to GATE(H) within one switching period. To start  
charge pumping, the control MOSFET must pull up the  
switching node above 0.6 V, two Schottky drops, which will  
Rpull–up Value Selection for Boost Circuit Startup  
The CS5212 application circuit incorporates a pull–up  
resistor, R7, into the boost circuitry. This resistor is essential  
to achieving startup of the boost circuit. At startup, the  
GATE(H) output may be limited to 0.8 V, due to internal Vbe  
drops. Until the boost circuitry charges up, the GATE(H)  
allow V voltage to increase. Therefore, the voltage applied  
C
by GATE(H) must be 0.6 V greater than Vth of the top FET.  
Both high– and low–side switches must be sublogic level  
MOSFETs with R  
ensure proper up.  
specified at 2.5 Vgs in order to  
DS(on)  
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12  
CS5212  
ORDERING INFORMATION  
Device  
Operating Temperature Range  
–40°C < T < 85°C  
Package  
SO–14  
SO–14  
SO–14  
SO–14  
Shipping  
55 Units/Rail  
CS5212ED14  
A
CS5212EDR14  
CS5212GD14  
2500 Tape & Reel  
55 Units/Rail  
0°C < T < 70°C  
A
CS5212GDR14  
2500 Tape & Reel  
PACKAGE DIMENSIONS  
SO–14  
D SUFFIX  
CASE 751A–03  
ISSUE F  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: MILLIMETER.  
3. DIMENSIONS A AND B DO NOT INCLUDE  
MOLD PROTRUSION.  
–A–  
14  
8
7
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)  
PER SIDE.  
–B–  
5. DIMENSION D DOES NOT INCLUDE DAMBAR  
PROTRUSION. ALLOWABLE DAMBAR  
PROTRUSION SHALL BE 0.127 (0.005) TOTAL  
IN EXCESS OF THE D DIMENSION AT  
MAXIMUM MATERIAL CONDITION.  
P 7 PL  
M
M
B
0.25 (0.010)  
1
MILLIMETERS  
INCHES  
MIN  
G
DIM MIN  
MAX  
8.75  
4.00  
1.75  
0.49  
1.25  
MAX  
0.344  
0.157  
0.068  
0.019  
0.049  
F
R X 45  
_
C
A
B
C
D
F
8.55  
3.80  
1.35  
0.35  
0.40  
0.337  
0.150  
0.054  
0.014  
0.016  
–T–  
SEATING  
PLANE  
J
M
G
J
1.27 BSC  
0.050 BSC  
K
D 14 PL  
0.19  
0.10  
0
0.25  
0.25  
7
0.008  
0.004  
0
0.009  
0.009  
7
M
S
S
0.25 (0.010)  
T B  
A
K
M
P
R
_
_
_
_
5.80  
0.25  
6.20  
0.50  
0.228  
0.010  
0.244  
0.019  
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13  
CS5212  
Notes  
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14  
CS5212  
Notes  
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15  
CS5212  
2
V is a trademark of Switch Power, Inc.  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make  
changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any  
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all  
liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be  
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.  
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death  
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC  
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees  
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that  
SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.  
PUBLICATION ORDERING INFORMATION  
Literature Fulfillment:  
JAPAN: ON Semiconductor, Japan Customer Focus Center  
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031  
Phone: 81–3–5740–2700  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada  
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada  
Email: ONlit@hibbertco.com  
Email: r14525@onsemi.com  
ON Semiconductor Website: http://onsemi.com  
For additional information, please contact your local  
Sales Representative.  
N. American Technical Support: 800–282–9855 Toll Free USA/Canada  
CS5212/D  
配单直通车
CS5212EDR14产品参数
型号:CS5212EDR14
生命周期:Obsolete
IHS 制造商:ROCHESTER ELECTRONICS INC
零件包装代码:SOIC
包装说明:SOP,
针数:14
Reach Compliance Code:unknown
风险等级:5.83
Is Samacsys:N
模拟集成电路 - 其他类型:SWITCHING CONTROLLER
控制模式:CURRENT/VOLTAGE-MODE
控制技术:PULSE WIDTH MODULATION
最大输入电压:7 V
最小输入电压:3.1 V
标称输入电压:3.5 V
JESD-30 代码:R-PDSO-G14
长度:8.65 mm
功能数量:1
端子数量:14
最高工作温度:85 °C
最低工作温度:-40 °C
最大输出电流:1.5 A
封装主体材料:PLASTIC/EPOXY
封装代码:SOP
封装形状:RECTANGULAR
封装形式:SMALL OUTLINE
座面最大高度:1.75 mm
表面贴装:YES
切换器配置:PUSH-PULL
最大切换频率:900 kHz
温度等级:INDUSTRIAL
端子形式:GULL WING
端子节距:1.27 mm
端子位置:DUAL
宽度:3.9 mm
Base Number Matches:1
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