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  • 北京元坤伟业科技有限公司

         该会员已使用本站17年以上

  • CSD95480RWJ
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  • 集好芯城

     该会员已使用本站13年以上
  • CSD95480RWJ 现货库存
  • 数量22002 
  • 厂家TI(德州仪器) 
  • 封装 
  • 批号22+ 
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  • 深圳市恒达亿科技有限公司

     该会员已使用本站16年以上
  • CSD95480RWJ 现货库存
  • 数量8000 
  • 厂家TI 
  • 封装VQFN-41 
  • 批号24+ 
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  • 深圳市雅维特电子有限公司

     该会员已使用本站15年以上
  • CSD95480RWJ 现货库存
  • 数量5000 
  • 厂家TI 
  • 封装VQFN41 
  • 批号23+ 
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  • 深圳市广百利电子有限公司

     该会员已使用本站6年以上
  • CSD95480RWJ 现货库存
  • 数量18500 
  • 厂家TI(德州仪器) 
  • 封装VQFN-41 
  • 批号24+ 
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  • 深圳市芯脉实业有限公司

     该会员已使用本站11年以上
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  • 数量2500 
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  • 深圳市雅维特电子有限公司

     该会员已使用本站15年以上
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  • 数量5000 
  • 厂家TI 
  • 封装VQFN41 
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     该会员已使用本站1年以上
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  • 北京耐芯威科技有限公司

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  • 数量5000 
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  • 深圳市得捷芯城科技有限公司

     该会员已使用本站11年以上
  • CSD95480RWJ
  • 数量100 
  • 厂家TI/德州仪器 
  • 封装NA/ 
  • 批号23+ 
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  • 集好芯城

     该会员已使用本站13年以上
  • CSD95480RWJ
  • 数量20463 
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  • 深圳市和诚半导体有限公司

     该会员已使用本站11年以上
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  • 数量5600 
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  • 深圳市得捷芯城科技有限公司

     该会员已使用本站11年以上
  • CSD95480RWJ
  • 数量12048 
  • 厂家TI(德州仪器) 
  • 封装VQFN-41 
  • 批号23+ 
  • 原厂可订货,技术支持,直接渠道。可签保供合同
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  • 深圳市美思瑞电子科技有限公司

     该会员已使用本站12年以上
  • CSD95480RWJT
  • 数量12245 
  • 厂家TI/德州仪器 
  • 封装QFN 
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  • 深圳市西源信息科技有限公司

     该会员已使用本站9年以上
  • CSD95480RWJ
  • 数量8800 
  • 厂家TI 
  • 封装SON8 
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  • 北京齐天芯科技有限公司

     该会员已使用本站15年以上
  • CSD95480RWJT
  • 数量5000 
  • 厂家Texas Instruments 
  • 封装41-VQFN-CLIP(5x6) 
  • 批号2024+ 
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  • 深圳市宏世佳电子科技有限公司

     该会员已使用本站13年以上
  • CSD95480RWJ
  • 数量3565 
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  • 北京齐天芯科技有限公司

     该会员已使用本站15年以上
  • CSD95480RWJT
  • 数量5000 
  • 厂家Texas Instruments 
  • 封装41-VQFN-CLIP(5x6) 
  • 批号2024+ 
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  • 深圳市拓亿芯电子有限公司

     该会员已使用本站12年以上
  • CSD95480RWJ
  • 数量30000 
  • 厂家TI 
  • 封装QFN 
  • 批号23+ 
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  • 深圳市华芯盛世科技有限公司

     该会员已使用本站13年以上
  • CSD95480RWJ
  • 数量865000 
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  • 深圳市芯福林电子有限公司

     该会员已使用本站15年以上
  • CSD95480RWJ
  • 数量13880 
  • 厂家TI/德州仪器 
  • 封装41-VQFN-CLIP 
  • 批号21+ 
  • 公司只售原装 支持实单
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  • 深圳市芯鹏泰科技有限公司

     该会员已使用本站8年以上
  • CSD95480RWJT
  • 数量6538 
  • 厂家TI/德州仪器 
  • 封装VQFN-41 
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  • 深圳市惊羽科技有限公司

     该会员已使用本站11年以上
  • CSD95480RWJ
  • 数量6328 
  • 厂家TI-德州仪器 
  • 封装QFN-41 
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  • 深圳市雅维特电子有限公司

     该会员已使用本站15年以上
  • CSD95480RWJ
  • 数量5000 
  • 厂家TI 
  • 封装VQFN41 
  • 批号19+ 
  • 原装正品假一赔十支持实单
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  • 深圳市一呈科技有限公司

     该会员已使用本站9年以上
  • CSD95480RWJ
  • 数量5280 
  • 厂家TI(德州仪器) 
  • 封装VQFN-41 
  • 批号23+ 
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  • 现代芯城(深圳)科技有限公司

     该会员已使用本站15年以上
  • CSD95480RWJ
  • 数量60000 
  • 厂家一级代理 
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     该会员已使用本站2年以上
  • CSD95480RWJ
  • 数量45000 
  • 厂家TI(德州仪器) 
  • 封装VQFN-41-CLIP(5x6) 
  • 批号2年内 
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  • 深圳市芯福林电子有限公司

     该会员已使用本站15年以上
  • CSD95480RWJ
  • 数量85000 
  • 厂家TI/德州仪器 
  • 封装QFN 
  • 批号23+ 
  • 真实库存全新原装正品!代理此型号
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  • 深圳市惠诺德电子有限公司

     该会员已使用本站7年以上
  • CSD95480RWJ
  • 数量29500 
  • 厂家Texas Instruments 
  • 封装SYNCHRONOUS BUCK 
  • 批号21+ 
  • 只做原装现货代理
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  • 宇芯通实业(深圳)有限公司

     该会员已使用本站8年以上
  • CSD95480RWJ
  • 数量5000 
  • 厂家TI 
  • 封装VQFN-CLIP|41 
  • 批号21+ 
  • 只做品牌原装假一赔十
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  • 深圳市婷轩实业有限公司

     该会员已使用本站6年以上
  • CSD95480RWJ
  • 数量10000 
  • 厂家TI 
  • 封装VQFN41 
  • 批号23+ 
  • 原装正品 公司现货
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  • 深圳市西源信息科技有限公司

     该会员已使用本站9年以上
  • CSD95480RWJ
  • 数量8800 
  • 厂家TI 
  • 封装VQFN-41 
  • 批号最新批号 
  • 原装现货零成本有接受价格就出
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  • 北京耐芯威科技有限公司

     该会员已使用本站13年以上
  • CSD95480RWJT
  • 数量5000 
  • 厂家Texas Instruments 
  • 封装41-VQFN-CLIP(5x6) 
  • 批号21+ 
  • 全新原装、现货库存,欢迎询价
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  • 深圳市龙腾新业科技有限公司

     该会员已使用本站17年以上
  • CSD95480RWJ
  • 数量20463 
  • 厂家TI/德州仪器 
  • 封装QFN 
  • 批号24+ 
  • 原装原厂 现货现卖
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  • 深圳市中空科技有限公司

     该会员已使用本站11年以上
  • CSD95480RWJ
  • 数量12000 
  • 厂家VQFN-41 
  • 封装24+ 
  • 批号TI 
  • 原装正品可含税
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  • 深圳市芯柏然科技有限公司

     该会员已使用本站7年以上
  • CSD95480RWJ
  • 数量23480 
  • 厂家TI 
  • 封装QFN 
  • 批号21+ 
  • 新到现货、一手货源、当天发货、价格低于市场
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产品型号CSD95480RWJ的概述

CSD95480RWJ芯片的概述 CSD95480RWJ是一款高效能的功率管理IC,主要应用于DC-DC转换器、车载电源供应、便携式设备以及各种消费电子类产品。这款芯片是由德州仪器(Texas Instruments)设计和生产的,专门用于提供高效率、低EMI的电源解决方案。凭借其高度集成的设计,CSD95480RWJ能够满足现代电力管理系统对效率和性能的严格要求,尤其适用于需要快速充电、低功耗和高密度的应用场景。 CSD95480RWJ的详细参数 CSD95480RWJ芯片具备诸多显著参数,可以为应用提供有效的支持。以下是一些关键参数: - 输入电压范围: 4.5V至16V,适用于多种供电情境。 - 输出电流: 最大支持20A,能够满足高负载需求。 - 开关频率: 可调范围从200kHz至2MHz,用户可以根据需要选择频率,以优化效能。 - 效率: 在大多数应用条件下,提供超过95%...

产品型号CSD95480RWJ的Datasheet PDF文件预览

Support &  
Community  
Product  
Folder  
Order  
Now  
Tools &  
Software  
Technical  
Documents  
CSD95480RWJ  
SLPS670 JUNE 2017  
CSD95480RWJ Synchronous Buck NexFET™ Smart Power Stage  
1 Features  
2 Applications  
1
70-A Continuous Operating Current Capability  
Over 95% System Efficiency at 30 A  
High-Frequency Operation (up to 1.25 MHz)  
Diode Emulation Function  
Multiphase Synchronous Buck Converters  
High-Frequency Applications  
High-Current, Low-Duty Cycle Applications  
POL DC-DC Converters  
Temperature Compensated Bi-Directional Current  
Sense  
Memory and Graphic Cards  
Desktop and Server VR12.x / VR13.x V-Core  
Synchronous Buck Converters  
Analog Temperature Output  
Fault Monitoring  
3 Description  
3.3-V and 5-V PWM Signal Compatible  
Tri-State PWM Input  
The CSD95480RWJ NexFET™ power stage is a  
highly optimized design for use in a high-power, high-  
density synchronous buck converter. This product  
integrates the driver IC and power MOSFETs to  
complete the power stage switching function. This  
combination produces high-current, high-efficiency,  
and high-speed switching capability in a small 5-mm  
× 6-mm outline package. It also integrates the  
accurate current sensing and temperature sensing  
functionality to simplify system design and improve  
accuracy. In addition, the PCB footprint has been  
optimized to help reduce design time and simplify the  
completion of the overall system design.  
Integrated Bootstrap Switch  
Optimized Dead Time for Shoot-Through  
Protection  
High-Density QFN 5-mm × 6-mm Footprint  
Ultra-Low-Inductance Package  
System Optimized PCB Footprint  
Thermally Enhanced Topside Cooling  
RoHS Compliant – Lead-Free Terminal Plating  
Halogen Free  
Device Information(1)  
DEVICE  
MEDIA  
QTY  
PACKAGE  
SHIP  
Application Diagram  
CSD95480RWJ  
13-Inch Reel  
2500  
QFN  
Tape  
and  
Reel  
5.00-mm × 6.00-mm  
Package  
P12V  
CSD95480RWJT  
7-Inch Reel  
250  
TPS53679  
BOOT BOOT_R  
AVSP  
AVSN  
VIN  
VOS  
PWM  
PWM1  
CSD95480RWJ  
ASKIP#  
EN/FCCM  
(1) For all available packages, see the orderable addendum at  
the end of the data sheet.  
P5V  
VSW  
TAO  
VDD  
LOAD  
PVDD  
LSET  
PGND IOUT REFIN  
ACSP1  
TSEN  
Typical Power Stage Efficiency and Power Loss  
100  
90  
80  
70  
60  
50  
40  
30  
17.5  
P12V  
P5V  
15  
BOOT BOOT_R  
VOS  
VIN  
APWM6  
PWM  
CSD95480RWJ  
EN/FCCM  
VREF  
3.3V  
VSW  
TAO  
ADDR  
VDD  
12.5  
10  
PVDD  
LSET  
PGND IOUT REFIN  
VDD = 5 V  
VIN = 12 V  
VOUT = 1.8 V  
LOUT = 150 nH  
fSW = 600 kHz  
TA = 25èC  
V3P3  
ACSP6  
VREF  
P12V  
VIN_CSNIN  
7.5  
5
CSPIN  
BVSN  
BVSP  
VCCIO  
BEN_VCCIO  
P12V  
P5V  
SCLK  
SDIO  
BOOT BOOT_R  
VIN  
SALERT#  
PIN_ALT#  
VR_HOT#  
SMB_CLK  
SMB_ALERT#  
SMB_DIO  
AVR_RDY  
BVR_RDY  
AVR_EN  
2.5  
0
VOS  
PWM  
BPWM1  
BSKIP#  
CSD95492QVM  
EN/FCCM  
VSW  
TAO  
VDD  
LOAD  
PVDD  
LSET  
PGND IOUT REFIN  
0
10  
20  
30  
40  
50  
60  
70  
Output Current (A)  
D000  
VR_FAULT#  
RESET#  
BCSP1  
AGND  
Copyright  
© 2016, Texas Instruments Incorporated  
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,  
intellectual property matters and other important disclaimers. PRODUCTION DATA.  
 
 
 
CSD95480RWJ  
SLPS670 JUNE 2017  
www.ti.com  
Table of Contents  
1
2
3
4
5
6
Features.................................................................. 1  
8
Device and Documentation Support.................... 7  
8.1 Receiving Notification of Documentation Updates.... 7  
8.2 Community Resources.............................................. 7  
8.3 Trademarks............................................................... 7  
8.4 Electrostatic Discharge Caution................................ 7  
8.5 Glossary.................................................................... 7  
Applications ........................................................... 1  
Description ............................................................. 1  
Revision History..................................................... 2  
Pin Configuration and Functions......................... 3  
Specifications......................................................... 4  
6.1 Absolute Maximum Ratings ...................................... 4  
6.2 ESD Ratings.............................................................. 4  
6.3 Recommended Operating Conditions....................... 4  
6.4 Thermal Information.................................................. 5  
Application Schematic .......................................... 6  
9
Mechanical, Packaging, and Orderable  
Information ............................................................. 8  
9.1 Mechanical Drawing.................................................. 8  
9.2 Recommended PCB Land Pattern............................ 9  
9.3 Recommended Stencil Opening ............................. 10  
7
4 Revision History  
DATE  
REVISION  
NOTES  
June 2017  
*
Initial release.  
2
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5 Pin Configuration and Functions  
Top View  
39 38 37 36 35 34 33 32 31 30  
VOS  
AGND  
VDD  
1
2
3
4
5
6
VIN  
29  
28 VIN  
27 VIN  
26 VIN  
25 VIN  
VIN  
40  
PVDD  
PGND  
NC  
41  
PGND  
24  
23 PGND  
22 PGND  
21 PGND  
PGND  
PGND  
PGND  
7
8
9
PGND  
PGND  
20  
10 11 12 13 14 15 16 17 18 19  
Pin Functions  
PIN  
DESCRIPTION  
NAME  
VOS  
NUMBER  
1
2
Output voltage sensing pin for the internal current sensing circuitry.  
This pin is internally connected to PGND.  
AGND  
VDD  
3
Supply voltage for internal circuitry. This pin should be bypassed directly to pin 2.  
Supply voltage for gate drivers. This pin should be bypassed to PGND.  
Power ground.  
PVDD  
PGND  
NC  
4
5
6
Not connected. This pin needs to be left floating in application.  
Power ground.  
PGND  
VSW  
PGND  
VIN  
7-9  
10-19  
20-24  
25-30  
31  
Phase node connecting the HS MOSFET source and LS MOSFET drain – pin connection to the output inductor.  
Power ground.  
Input voltage pin. Connect input capacitors close to this pin.  
Not connected. This pin needs to be left floating in application.  
Return path for HS gate driver. It is connected to VSW internally.  
NC  
BOOTR  
32  
Bootstrap capacitor connection. Connect a minimum 0.1-µF, 16-V, X5R ceramic capacitor from BOOT to  
BOOTR pins. The bootstrap capacitor provides the charge to turn on the control FET. The bootstrap diode is  
integrated.  
BOOT  
PWM  
33  
34  
Tri-state input from external controller. Logic low sets control FET gate low and sync FET gate high. Logic high  
sets control FET gate high and sync FET gate low. Both MOSFET gates are set low if PWM stays in Hi-Z for  
greater than the tri-state shutdown holdoff time (T3HT).  
This dual function pin either enables the diode emulation function or can be used as a simple enable for the  
device. When this pin is driven into the tri-state window and held there for more than the tri-state holdoff time,  
diode emulation mode is enabled for sync FET. When the pin is high, device operates in forced continuous  
conduction mode. When the pin is low, both FETs are held off. An internal resistor pulls this pin low if left  
floating.  
EN/FCCM  
35  
Temperature amplifier output. Reports a voltage proportional to the IC temperature. An ORing diode is integrated  
in the IC. When used in multiphase application, a single wire can be used to connect the TAO pins of all the ICs.  
Only the highest temperature will be reported. TAO will be pulled up to 3.3 V if thermal shutdown LSOC or HSS  
detection circuit is tripped.  
TAO/FLT  
36  
LSET  
IOUT  
REFIN  
PGND  
NC  
37  
38  
39  
40  
41  
A resistor from this pin to PGND pin sets the inductor value for the internal current sensing circuitry.  
Output of current sensing amplifier. V(IOUT) – V(REFIN) is proportional to the phase current.  
External reference voltage input for current sensing amplifier.  
Power ground.  
Not connected. This pin needs to be left floating in application.  
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6 Specifications  
6.1 Absolute Maximum Ratings  
TA = 25°C (unless otherwise stated)(1)  
MIN  
–0.3  
–0.3  
MAX  
UNIT  
V
VIN to PGND  
20  
VIN to VSW  
20  
V
VIN to VSW (10 ns)  
VSW to PGND  
23  
V
–0.3  
–7  
20  
V
VSW to PGND (10 ns)  
VDD to PGND  
23  
V
–0.3  
–0.3  
–0.3  
–0.3  
–0.3  
–0.3  
–0.3  
–55  
–55  
7
V
PVDD to PGND  
7
VDD + 0.3  
7
V
EN/FCCM, TAO/FLT, LSET to PGND  
IOUT, VOS, PWM to PGND  
REFIN  
V
V
3.6  
V
BOOT to BOOTR(2)  
VDD + 0.3  
30  
V
BOOT to PGND  
V
TJ  
Operating junction temperature  
Storage temperature  
150  
°C  
°C  
Tstg  
150  
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings  
only, and functional operation of the device at these or any other conditions beyond those indicated in the Recommended Operating  
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
(2) Should not exceed 7 V.  
6.2 ESD Ratings  
VALUE  
±2000  
±500  
UNIT  
Human-body model (HBM)  
V(ESD)  
Electrostatic discharge  
V
Charged-device model (CDM)  
6.3 Recommended Operating Conditions  
TA = 25°C (unless otherwise stated)  
MIN  
4.5  
4.5  
4.5  
MAX  
5.5  
UNIT  
VDD  
Driver supply voltage  
Gate drive voltage  
Input supply voltage(1)  
Output voltage  
V
V
PVDD  
VIN  
5.5  
16  
V
VOUT  
5.5  
V
PWM to PGND  
VDD + 0.3  
70  
V
IOUT  
Continuous output current  
IOUT-PK Peak output current(3)  
A
VIN = 12 V, VDD = 5 V, PVDD = 5 V, VOUT = 1.2 V,  
ƒSW = 500 kHz(2)  
90  
A
ƒSW  
Switching frequency  
CBST = 0.1 µF (min), VOUT = 2.5 V (max)  
ƒSW = 1 MHz  
1250  
85%  
kHz  
On-time duty cycle  
Minimum PWM on-time  
Operating junction temperature  
20  
ns  
°C  
–40  
125  
(1) Operating at high VIN can create excessive AC voltage overshoots on the switch node (VSW) during MOSFET switching transients. For  
reliable operation, the switch node (VSW) to ground voltage must remain at or below the Absolute Maximum Ratings.  
(2) Measurement made with six 10-µF (TDK C3216X7R1C106KT or equivalent) ceramic capacitors across VIN to PGND pins.  
(3) System conditions as defined in Note 2. Peak output current is applied for tp = 50 µs.  
4
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6.4 Thermal Information  
TA = 25°C (unless otherwise stated)  
THERMAL METRIC  
MIN  
TYP  
MAX UNIT  
°C/W  
θJC  
θJB  
ΨJT  
Thermal resistance, junction-to-case (top of package)  
Thermal resistance, junction-to-board(1)  
7.4  
2.2  
0.9  
°C/W  
Junction-to-top characterization parameter  
°C/W  
(1) θJB is determined with the device mounted on a 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu pad on a 1.5-in × 1.5-in, 0.06-in (1.52-mm)  
thick FR4 board based on hottest board temperature within 1 mm of the package.  
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7 Application Schematic  
P12V  
P5V  
TPS53679  
BOOT BOOT_R  
AVSP  
AVSN  
VIN  
VOS  
PWM  
PWM1  
CSD95480RWJ  
ASKIP#  
EN/FCCM  
VSW  
TAO  
VDD  
LOAD  
PVDD  
LSET  
PGND IOUT REFIN  
ACSP1  
TSEN  
P12V  
P5V  
BOOT BOOT_R  
VOS  
VIN  
PWM  
APWM6  
CSD95480RWJ  
EN/FCCM  
VREF  
3.3V  
VSW  
TAO  
ADDR  
VDD  
PVDD  
LSET  
PGND IOUT REFIN  
V3P3  
ACSP6  
VREF  
P12V  
VIN_CSNIN  
CSPIN  
BVSN  
BVSP  
VCCIO  
BEN_VCCIO  
P12V  
P5V  
SCLK  
SDIO  
BOOT BOOT_R  
VIN  
SALERT#  
PIN_ALT#  
VR_HOT#  
SMB_CLK  
SMB_ALERT#  
SMB_DIO  
AVR_RDY  
BVR_RDY  
AVR_EN  
VOS  
PWM  
BPWM1  
BSKIP#  
CSD95492QVM  
EN/FCCM  
VSW  
TAO  
VDD  
LOAD  
PVDD  
LSET  
PGND IOUT REFIN  
VR_FAULT#  
RESET#  
BCSP1  
AGND  
Copyright © 2016, Texas Instruments Incorporated  
Figure 1. Application Schematic  
Note: The schematic in Figure 1 is a conceptual drawing only. Actual designs may require additional components  
not shown.  
6
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8 Device and Documentation Support  
8.1 Receiving Notification of Documentation Updates  
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper  
right corner, click on Alert me to register and receive a weekly digest of any product information that has  
changed. For change details, review the revision history included in any revised document.  
8.2 Community Resources  
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective  
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of  
Use.  
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration  
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help  
solve problems with fellow engineers.  
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and  
contact information for technical support.  
8.3 Trademarks  
NexFET, E2E are trademarks of Texas Instruments.  
All other trademarks are the property of their respective owners.  
8.4 Electrostatic Discharge Caution  
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam  
during storage or handling to prevent electrostatic damage to the MOS gates.  
8.5 Glossary  
SLYZ022 TI Glossary.  
This glossary lists and explains terms, acronyms, and definitions.  
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9 Mechanical, Packaging, and Orderable Information  
The following pages include mechanical, packaging, and orderable information. This information is the most  
current data available for the designated devices. This data is subject to change without notice and revision of  
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.  
9.1 Mechanical Drawing  
5.1  
4.9  
A
B
PIN 1 INDEX AREA  
6.1  
5.9  
C
1.05 MAX  
SEATING PLANE  
0.08  
(0.203) TYP  
0.05  
0.00  
0.3  
0.2  
9X 0.45  
10X  
0.13 TYP  
10  
19  
0.3  
0.2  
13X  
2.6 0.1  
2.2 0.1  
9
20  
2.05  
1.95  
7
6
10X 0.45  
0.8 0.1  
0.4 0.1  
0.1 0.1  
R0.05  
TYP  
24  
25  
41  
0.000  
PKG  
0.3 0.1  
0.45  
0.35  
16X  
40  
2.25 0.1  
2.275  
2.175  
29  
1
PIN 1 ID  
39  
30  
(45 X0.3)  
0.3  
0.2  
14X 0.45  
16X  
0.1  
C A B  
0.05  
4221590/C 01/2017  
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning  
and tolerancing per ASME Y14.5M.  
2. This drawing is subject to change without notice.  
3. The package thermal pads must be soldered to the printed circuit board for optimal thermal and mechanical  
performance.  
8
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9.2 Recommended PCB Land Pattern  
METAL UNDER  
SOLDER MASK  
TYP  
16X (0.6)  
39  
30  
(2.9)  
16X (0.25)  
1
(2.25)  
(2.175)  
(2.05)  
(2.25)  
29  
SOLDER MASK  
OPENING, TYP  
40  
(1.275)  
14X (0.45)  
(0.5)  
(0.3)  
25  
24  
(0.3)  
(0.025)  
6
(0.1)  
0.000 PKG  
(0.3)  
41  
(0.4)  
(R0.05) TYP  
5X (1.15)  
(0.8)  
7
(1.05)  
19X (0.45)  
(
0.2) VIA  
TYP  
9
5X (2)  
(2.05)  
20  
(2.2)  
(0.05) MIN  
TYP  
(2.6)  
(2.75) TYP  
(3.2) TYP  
19  
10  
PKG  
20X (0.25)  
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning  
and tolerancing per ASME Y14.5M.  
2. This drawing is subject to change without notice.  
3. This package is designed to be soldered to thermal pads on the board. For more information, see QFN/SON  
PCB Attachment (SLUA271).  
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9.3 Recommended Stencil Opening  
29X (0.6)  
39  
30  
29X (0.25)  
1
EXPOSED  
METAL  
4X (2.245)  
29  
24X (0.45)  
4X (1.375)  
4X (1.175)  
40  
EXPOSED  
METAL  
SOLDER MASK  
OPENING  
TYP  
25  
24  
(0.375)  
4X (0.305)  
(0.025)  
6
(0.1)  
(0.4)  
0.000 PKG  
3X (0.13)  
(0.25)  
41  
(0.84)  
(1.05)  
7
9
3X (1.05)  
3X (1.25)  
(R0.05) TYP  
20  
EXPOSED  
METAL  
4X (2.17)  
(2.6)  
(2.75) TYP  
METAL UNDER  
SOLDER MASK  
TYP  
10  
(3.2) TYP  
19  
10X (0.25)  
9X (0.45)  
SOLDER PAST EXAMPLE  
BASED ON 0.125 mm THICK STENCIL  
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning  
and tolerancing per ASME Y14.5M.  
2. This drawing is subject to change without notice.  
3. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525  
may have alternate design recommendations.  
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PACKAGE OPTION ADDENDUM  
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10-Dec-2020  
PACKAGING INFORMATION  
Orderable Device  
Status Package Type Package Pins Package  
Eco Plan  
Lead finish/  
Ball material  
MSL Peak Temp  
Op Temp (°C)  
Device Marking  
Samples  
Drawing  
Qty  
2500  
250  
(1)  
(2)  
(3)  
(4/5)  
(6)  
CSD95480RWJ  
CSD95480RWJT  
ACTIVE  
VQFN-CLIP  
VQFN-CLIP  
RWJ  
41  
41  
RoHS-Exempt  
& Green  
NIPDAU | SN  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
-55 to 150  
-55 to 150  
95480RWJ  
95480RWJ  
ACTIVE  
RWJ  
RoHS-Exempt  
& Green  
NIPDAU | SN  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance  
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may  
reference these types of products as "Pb-Free".  
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.  
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based  
flame retardants must also meet the <=1000ppm threshold requirement.  
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.  
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation  
of the previous line and the two combined represent the entire Device Marking for that device.  
(6)  
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two  
lines if the finish value exceeds the maximum column width.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and  
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.  
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
Addendum-Page 1  
PACKAGE OPTION ADDENDUM  
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10-Dec-2020  
Addendum-Page 2  
PACKAGE MATERIALS INFORMATION  
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3-Jun-2023  
TAPE AND REEL INFORMATION  
REEL DIMENSIONS  
TAPE DIMENSIONS  
K0  
P1  
W
B0  
Reel  
Diameter  
Cavity  
A0  
A0 Dimension designed to accommodate the component width  
B0 Dimension designed to accommodate the component length  
K0 Dimension designed to accommodate the component thickness  
Overall width of the carrier tape  
W
P1 Pitch between successive cavity centers  
Reel Width (W1)  
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE  
Sprocket Holes  
Q1 Q2  
Q3 Q4  
Q1 Q2  
Q3 Q4  
User Direction of Feed  
Pocket Quadrants  
*All dimensions are nominal  
Device  
Package Package Pins  
Type Drawing  
SPQ  
Reel  
Reel  
A0  
B0  
K0  
P1  
W
Pin1  
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant  
(mm) W1 (mm)  
CSD95480RWJT  
CSD95480RWJT  
VQFN-  
CLIP  
RWJ  
RWJ  
41  
41  
250  
250  
180.0  
12.4  
5.3  
6.3  
1.2  
8.0  
12.0  
Q1  
VQFN-  
CLIP  
180.0  
12.4  
5.3  
6.3  
1.2  
8.0  
12.0  
Q1  
Pack Materials-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
3-Jun-2023  
TAPE AND REEL BOX DIMENSIONS  
Width (mm)  
H
W
L
*All dimensions are nominal  
Device  
Package Type Package Drawing Pins  
SPQ  
Length (mm) Width (mm) Height (mm)  
CSD95480RWJT  
CSD95480RWJT  
VQFN-CLIP  
VQFN-CLIP  
RWJ  
RWJ  
41  
41  
250  
250  
213.0  
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配单直通车
CSD95480RWJ产品参数
型号:CSD95480RWJ
Brand Name:Texas Instruments
是否无铅: 不含铅
是否Rohs认证: 符合
生命周期:Active
包装说明:HQCCN,
Reach Compliance Code:not_compliant
Factory Lead Time:12 weeks
风险等级:1.72
其他特性:ADJUSTABLE VOLTAGE RANGE IS UPTO 5.5V
模拟集成电路 - 其他类型:SWITCHING REGULATOR
控制技术:PULSE WIDTH MODULATION
最大输入电压:16 V
最小输入电压:4.5 V
标称输入电压:12 V
JESD-30 代码:R-XQCC-N41
JESD-609代码:e3
长度:6 mm
湿度敏感等级:2
功能数量:1
端子数量:41
最高工作温度:150 °C
最低工作温度:-55 °C
最大输出电流:90 A
封装主体材料:UNSPECIFIED
封装代码:HQCCN
封装形状:RECTANGULAR
封装形式:CHIP CARRIER, HEAT SINK/SLUG
座面最大高度:1.05 mm
表面贴装:YES
切换器配置:BUCK
最大切换频率:1250 kHz
温度等级:MILITARY
端子面层:Matte Tin (Sn)
端子形式:NO LEAD
端子节距:1.05 mm
端子位置:QUAD
宽度:5 mm
Base Number Matches:1
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