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  • 北京元坤伟业科技有限公司

         该会员已使用本站17年以上

  • CY62157EV30LL-45ZSXIT
  • 数量-
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  • QQ:857273081QQ:857273081 复制
    QQ:1594462451QQ:1594462451 复制
  • 010-62104931、62106431、62104891、62104791 QQ:857273081QQ:1594462451
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  • CY62157EV30LL-45ZSXIT图
  • 深圳市高捷芯城科技有限公司

     该会员已使用本站11年以上
  • CY62157EV30LL-45ZSXIT 现货库存
  • 数量5768 
  • 厂家CYPRESS(赛普拉斯) 
  • 封装TSOPII-44 
  • 批号23+ 
  • 百分百原装正品,可原型号开票
  • QQ:3007977934QQ:3007977934 复制
    QQ:3007947087QQ:3007947087 复制
  • 0755-83062789 QQ:3007977934QQ:3007947087
  • CY62157EV30LL-45ZSXIT图
  • 集好芯城

     该会员已使用本站13年以上
  • CY62157EV30LL-45ZSXIT 现货库存
  • 数量25729 
  • 厂家Cypress(赛普拉斯) 
  • 封装 
  • 批号22+ 
  • 原装原厂现货
  • QQ:3008092965QQ:3008092965 复制
    QQ:3008092965QQ:3008092965 复制
  • 0755-83239307 QQ:3008092965QQ:3008092965
  • CY62157EV30LL-45ZSXIT图
  • HECC GROUP CO.,LIMITED

     该会员已使用本站17年以上
  • CY62157EV30LL-45ZSXIT 现货库存
  • 数量9860 
  • 厂家CYPRESS 
  • 封装PBFREETSOPII 
  • 批号24+ 
  • Cypress专营,假一罚万!
  • QQ:3007947169QQ:3007947169 复制
    QQ:3007947210QQ:3007947210 复制
  • 755-83950895 QQ:3007947169QQ:3007947210
  • CY62157EV30LL-45ZSXIT图
  • HECC GROUP CO.,LIMITED

     该会员已使用本站17年以上
  • CY62157EV30LL-45ZSXIT 现货库存
  • 数量9860 
  • 厂家CYPRESS 
  • 封装PBFREETSOPII 
  • 批号24+ 
  • Cypress专营,假一罚万!
  • QQ:3003818780QQ:3003818780 复制
    QQ:3003819484QQ:3003819484 复制
  • 0755-83950895 QQ:3003818780QQ:3003819484
  • CY62157EV30LL-45ZSXIT图
  • 深圳市创德丰电子有限公司

     该会员已使用本站15年以上
  • CY62157EV30LL-45ZSXIT 现货库存
  • 数量149 
  • 厂家CYPRESS 
  • 封装TSSOP44 
  • 批号18+/17+ 
  • 一定原装房间现货
  • QQ:2851807192QQ:2851807192 复制
    QQ:2851807191QQ:2851807191 复制
  • 86-755-83226910, QQ:2851807192QQ:2851807191
  • CY62157EV30LL-45ZSXIT图
  • 深圳市宗天技术开发有限公司

     该会员已使用本站10年以上
  • CY62157EV30LL-45ZSXIT 现货库存
  • 数量8000 
  • 厂家Cypress(赛普拉斯) 
  • 封装TSOP-44 
  • 批号22+ 
  • 宗天技术 原装现货/假一赔十
  • QQ:444961496QQ:444961496 复制
    QQ:2824256784QQ:2824256784 复制
  • 0755-88601327 QQ:444961496QQ:2824256784
  • CY62157EV30LL-45ZSXIT图
  • 深圳市芯脉实业有限公司

     该会员已使用本站11年以上
  • CY62157EV30LL-45ZSXIT 现货库存
  • 数量26980 
  • 厂家CYPRESS 
  • 封装TSOP44 
  • 批号新年份 
  • 新到现货、一手货源、当天发货、bom配单
  • QQ:1435424310QQ:1435424310 复制
  • 0755-84507451 QQ:1435424310
  • CY62157EV30LL-45ZSXIT图
  • 深圳市宏捷佳电子科技有限公司

     该会员已使用本站12年以上
  • CY62157EV30LL-45ZSXIT 现货库存
  • 数量50600 
  • 厂家CYPRESS/赛普拉斯 
  • 封装TSOPI48 
  • 批号2103+ 
  • 原装价格当天为准可含票
  • QQ:2885134398QQ:2885134398 复制
    QQ:2885134554QQ:2885134554 复制
  • 0755- QQ:2885134398QQ:2885134554
  • CY62157EV30LL-45ZSXIT图
  • 深圳市澳亿芯电子科技有限公司

     该会员已使用本站13年以上
  • CY62157EV30LL-45ZSXIT 现货库存
  • 数量1000 
  • 厂家CYPRESS/赛普拉斯 
  • 封装TSOP44 
  • 批号【正品现货!】 
  • 【进口原装现货!】
  • QQ:347068106QQ:347068106 复制
  • 13760200702 QQ:347068106
  • CY62157EV30LL-45ZSXIT图
  • 深圳市芯脉实业有限公司

     该会员已使用本站11年以上
  • CY62157EV30LL-45ZSXIT 现货库存
  • 数量6980 
  • 厂家CYPRESS 
  • 封装TSOP44 
  • 批号22+ 
  • 新到现货、一手货源、当天发货、bom配单
  • QQ:2881512844QQ:2881512844 复制
  • 075584507705 QQ:2881512844
  • CY62157EV30LL-45ZSXIT图
  • 深圳市拓森弘电子有限公司

     该会员已使用本站1年以上
  • CY62157EV30LL-45ZSXIT
  • 数量5300 
  • 厂家Cypress(赛普拉斯) 
  • 封装TSOP-44 
  • 批号21+ 
  • 全新原装正品,库存现货实报
  • QQ:1300774727QQ:1300774727 复制
  • 13714410484 QQ:1300774727
  • CY62157EV30LL-45ZSXIT图
  • 深圳市芯福林电子有限公司

     该会员已使用本站15年以上
  • CY62157EV30LL-45ZSXIT
  • 数量65000 
  • 厂家CYPRESS(赛普拉斯) 
  • 封装TSOP-44 
  • 批号23+ 
  • 真实库存全新原装正品!代理此型号
  • QQ:2881495753QQ:2881495753 复制
  • 0755-23605827 QQ:2881495753
  • CY62157EV30LL-45ZSXIT图
  • 深圳市龙腾新业科技有限公司

     该会员已使用本站17年以上
  • CY62157EV30LL-45ZSXIT
  • 数量13406 
  • 厂家CYPRESS/赛普拉斯 
  • 封装NA 
  • 批号24+ 
  • 原装原厂 现货现卖
  • QQ:562765057QQ:562765057 复制
    QQ:370820820QQ:370820820 复制
  • 0755-84509636 QQ:562765057QQ:370820820
  • CY62157EV30LL-45ZSXIT图
  • 现代芯城(深圳)科技有限公司

     该会员已使用本站15年以上
  • CY62157EV30LL-45ZSXIT
  • 数量58000 
  • 厂家一级代理 
  • 封装一级代理 
  • 批号一级代理 
  • 一级代理正品采购
  • QQ:3007226851QQ:3007226851 复制
    QQ:3007226849QQ:3007226849 复制
  • 0755-82542579 QQ:3007226851QQ:3007226849
  • CY62157EV30LL-45ZSXIT图
  • 深圳市得捷芯城科技有限公司

     该会员已使用本站11年以上
  • CY62157EV30LL-45ZSXIT
  • 数量9689 
  • 厂家CYPRESS(赛普拉斯) 
  • 封装TSOPII-44 
  • 批号23+ 
  • 原厂直销,现货供应,账期支持!
  • QQ:3007977934QQ:3007977934 复制
    QQ:3007947087QQ:3007947087 复制
  • 0755-82546830 QQ:3007977934QQ:3007947087
  • CY62157EV30LL-45ZSXIT图
  • 集好芯城

     该会员已使用本站13年以上
  • CY62157EV30LL-45ZSXIT
  • 数量13406 
  • 厂家CYPRESS/赛普拉斯 
  • 封装NA 
  • 批号最新批次 
  • 原装原厂 现货现卖
  • QQ:3008092965QQ:3008092965 复制
    QQ:3008092965QQ:3008092965 复制
  • 0755-83239307 QQ:3008092965QQ:3008092965
  • CY62157EV30LL-45ZSXIT图
  • 深圳市拓亿芯电子有限公司

     该会员已使用本站12年以上
  • CY62157EV30LL-45ZSXIT
  • 数量7500 
  • 厂家CYPRESS/赛普拉斯 
  • 封装TSSOP44 
  • 批号23+ 
  • 进口原装原盘原标签假一赔十
  • QQ:2103443489QQ:2103443489 复制
    QQ:2924695115QQ:2924695115 复制
  • 0755-82702619 QQ:2103443489QQ:2924695115
  • CY62157EV30LL-45ZSXIT图
  • 柒号芯城电子商务(深圳)有限公司

     该会员已使用本站13年以上
  • CY62157EV30LL-45ZSXIT
  • 数量700000 
  • 厂家CYPRESS 
  • 封装TSOP-44 
  • 批号2023+ 
  • 柒号芯城跟原厂的距离只有0.07公分
  • QQ:2881677436QQ:2881677436 复制
    QQ:2881620402QQ:2881620402 复制
  • 18922803401 QQ:2881677436QQ:2881620402
  • CY62157EV30LL-45ZSXIT图
  • 深圳市西源信息科技有限公司

     该会员已使用本站9年以上
  • CY62157EV30LL-45ZSXIT
  • 数量8800 
  • 厂家CYPRESS/赛普拉斯 
  • 封装TSSOP44 
  • 批号最新批号 
  • 原装现货零成本有接受价格就出
  • QQ:3533288158QQ:3533288158 复制
    QQ:408391813QQ:408391813 复制
  • 0755-84876394 QQ:3533288158QQ:408391813
  • CY62157EV30LL-45ZSXIT_图
  • 北京首天国际有限公司

     该会员已使用本站16年以上
  • CY62157EV30LL-45ZSXIT_
  • 数量1050 
  • 厂家CYPRESS 
  • 封装 
  • 批号16+ 
  • 百分百原装正品,现货库存
  • QQ:528164397QQ:528164397 复制
    QQ:1318502189QQ:1318502189 复制
  • 010-62565447 QQ:528164397QQ:1318502189
  • CY62157EV30LL-45ZSXIT图
  • 深圳市恒佳微电子有限公司

     该会员已使用本站12年以上
  • CY62157EV30LL-45ZSXIT
  • 数量5212 
  • 厂家CYPRESS/赛普拉斯 
  • 封装TSOP44 
  • 批号23+ 
  • 全新原装进口现货支持宍单
  • QQ:864187665QQ:864187665 复制
    QQ:1807086236QQ:1807086236 复制
  • 755-82533156 QQ:864187665QQ:1807086236
  • CY62157EV30LL-45ZSXIT图
  • 深圳市华芯盛世科技有限公司

     该会员已使用本站13年以上
  • CY62157EV30LL-45ZSXIT
  • 数量865000 
  • 厂家CYPRESS/赛普拉斯 
  • 封装SMD 
  • 批号最新批号 
  • 一级代理,原装特价现货!
  • QQ:2881475757QQ:2881475757 复制
  • 0755-83225692 QQ:2881475757
  • CY62157EV30LL-45ZSXIT图
  • 深圳市美思瑞电子科技有限公司

     该会员已使用本站12年以上
  • CY62157EV30LL-45ZSXIT
  • 数量12245 
  • 厂家CYPRESS/赛普拉斯 
  • 封装N/A 
  • 批号22+ 
  • 现货,原厂原装假一罚十!
  • QQ:2885659458QQ:2885659458 复制
    QQ:2885657384QQ:2885657384 复制
  • 0755-83952260 QQ:2885659458QQ:2885657384
  • CY62157EV30LL-45ZSXIT图
  • HECC GROUP CO.,LIMITED

     该会员已使用本站17年以上
  • CY62157EV30LL-45ZSXIT
  • 数量4500 
  • 厂家CYPRESS 
  • 封装代理 
  • 批号2021+ 
  • 原装假一赔十!可提供正规渠道证明!
  • QQ:3003818780QQ:3003818780 复制
    QQ:3003819484QQ:3003819484 复制
  • 755-83950019 QQ:3003818780QQ:3003819484
  • CY62157EV30LL-45ZSXIT图
  • 深圳市华斯顿电子科技有限公司

     该会员已使用本站16年以上
  • CY62157EV30LL-45ZSXIT
  • 数量17779 
  • 厂家CYPRESS 
  • 封装TSOP-44 
  • 批号2023+ 
  • 绝对原装正品全新进口深圳现货
  • QQ:1002316308QQ:1002316308 复制
    QQ:515102657QQ:515102657 复制
  • 深圳分公司0755-83777708“进口原装正品专供” QQ:1002316308QQ:515102657
  • CY62157EV30LL-45ZSXIT图
  • 深圳市惊羽科技有限公司

     该会员已使用本站11年以上
  • CY62157EV30LL-45ZSXIT
  • 数量6328 
  • 厂家CYPRESS-赛普拉斯 
  • 封装TSOP-44 
  • 批号▉▉:2年内 
  • ▉▉¥73.4元一有问必回一有长期订货一备货HK仓库
  • QQ:43871025QQ:43871025 复制
  • 131-4700-5145---Q-微-恭-候---有-问-秒-回 QQ:43871025
  • CY62157EV30LL-45ZSXIT图
  • 深圳市一呈科技有限公司

     该会员已使用本站9年以上
  • CY62157EV30LL-45ZSXIT
  • 数量3850 
  • 厂家Cypress(赛普拉斯) 
  • 封装TSOP-44 
  • 批号23+ 
  • ▉原装现货▉可含税可订货
  • QQ:3003797048QQ:3003797048 复制
    QQ:3003797050QQ:3003797050 复制
  • 0755-82779553 QQ:3003797048QQ:3003797050
  • CY62157EV30LL-45ZSXIT图
  • 深圳市誉兴微科技有限公司

     该会员已使用本站4年以上
  • CY62157EV30LL-45ZSXIT
  • 数量12600 
  • 厂家CYPRESS/赛普拉斯 
  • 封装TSSOP44 
  • 批号22+ 
  • 深圳原装现货,支持实单
  • QQ:2252757071QQ:2252757071 复制
  • 0755-82579431 QQ:2252757071
  • CY62157EV30LL-45ZSXIT图
  • 深圳市晶美隆科技有限公司

     该会员已使用本站14年以上
  • CY62157EV30LL-45ZSXIT
  • 数量12736 
  • 厂家Cypress 
  • 封装SOP 
  • 批号23+ 
  • 全新原装正品现货特价
  • QQ:2885348339QQ:2885348339 复制
    QQ:2885348317QQ:2885348317 复制
  • 0755-82519391 QQ:2885348339QQ:2885348317
  • CY62157EV30LL-45ZSXIT图
  • 深圳市水星电子有限公司

     该会员已使用本站4年以上
  • CY62157EV30LL-45ZSXIT
  • 数量26300 
  • 厂家Cypress 
  • 封装44-TSOP 
  • 批号23+ 
  • 确保原装正品,终端可支持一站式BOM配单
  • QQ:2881703403QQ:2881703403 复制
  • 0755-89585609 QQ:2881703403
  • CY62157EV30LL-45ZSXIT图
  • 昂富(深圳)电子科技有限公司

     该会员已使用本站4年以上
  • CY62157EV30LL-45ZSXIT
  • 数量17127 
  • 厂家CYPRESS 
  • 封装TSOP44 
  • 批号24+ 
  • 一站式BOM配单,短缺料找现货,怕受骗,就找昂富电子.
  • QQ:GTY82dX7
  • 0755-23611557【陈妙华 QQ:GTY82dX7
  • CY62157EV30LL-45ZSXIT图
  • 深圳市羿芯诚电子有限公司

     该会员已使用本站7年以上
  • CY62157EV30LL-45ZSXIT
  • 数量8500 
  • 厂家CYPRESS(赛普拉斯) 
  • 封装TSOP-44 
  • 批号新年份 
  • 羿芯诚只做原装,原厂渠道,价格优势可谈!
  • QQ:2853992132QQ:2853992132 复制
  • 0755-82570683 QQ:2853992132
  • CY62157EV30LL-45ZSXIT图
  • 深圳市意好科技有限公司

     该会员已使用本站15年以上
  • CY62157EV30LL-45ZSXIT
  • 数量4300 
  • 厂家CYPRESS 
  • 封装原厂 
  • 批号24+ 
  • 中华地区销售
  • QQ:2853107358QQ:2853107358 复制
    QQ:2853107357QQ:2853107357 复制
  • 0755-88608316 QQ:2853107358QQ:2853107357
  • CY62157EV30LL-45ZSXIT图
  • 深圳市创德丰电子有限公司

     该会员已使用本站15年以上
  • CY62157EV30LL-45ZSXIT
  • 数量149 
  • 厂家CYPRESS 
  • 封装TSSOP44 
  • 批号18+/17+ 
  • 一定原装房间现货
  • QQ:2851807192QQ:2851807192 复制
    QQ:2851807191QQ:2851807191 复制
  • 86-755-83226910, QQ:2851807192QQ:2851807191
  • CY62157EV30LL-45ZSXIT图
  • 深圳市宇集芯电子有限公司

     该会员已使用本站6年以上
  • CY62157EV30LL-45ZSXIT
  • 数量99000 
  • 厂家CYPRESS 
  • 封装TSOP/44 
  • 批号23+ 
  • 一级代理进口原装现货、假一罚十价格合理
  • QQ:1157099927QQ:1157099927 复制
    QQ:2039672975QQ:2039672975 复制
  • 0755-2870-8773手机微信同号13430772257 QQ:1157099927QQ:2039672975
  • CY62157EV30LL-45ZSXIT图
  • 深圳市宏世佳电子科技有限公司

     该会员已使用本站13年以上
  • CY62157EV30LL-45ZSXIT
  • 数量3587 
  • 厂家Cypress 
  • 封装44-TSOP(0.400,10.16mm 宽) 
  • 批号2023+ 
  • 全新原厂原装产品、公司现货销售
  • QQ:2881894393QQ:2881894393 复制
    QQ:2881894392QQ:2881894392 复制
  • 0755- QQ:2881894393QQ:2881894392
  • CY62157EV30LL-45ZSXIT图
  • 深圳市迈锐达科技有限公司

     该会员已使用本站14年以上
  • CY62157EV30LL-45ZSXIT
  • 数量8500 
  • 厂家CY 
  • 封装原 厂原包 
  • 批号08+ 
  • 原装现货特价!!
  • QQ:603546486QQ:603546486 复制
    QQ:1181043992QQ:1181043992 复制
  • 86-0755 QQ:603546486QQ:1181043992
  • CY62157EV30LL-45ZSXIT图
  • 深圳市宏世佳电子科技有限公司

     该会员已使用本站13年以上
  • CY62157EV30LL-45ZSXIT
  • 数量3577 
  • 厂家CYPRESS 
  • 封装TSOP 
  • 批号2023+ 
  • 全新原厂原装产品、公司现货销售
  • QQ:2881894392QQ:2881894392 复制
    QQ:2881894393QQ:2881894393 复制
  • 0755- QQ:2881894392QQ:2881894393
  • CY62157EV30LL-45ZSXIT图
  • 深圳市宏捷佳电子科技有限公司

     该会员已使用本站12年以上
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产品型号CY62157EV30LL-45ZSXIT的概述

CY62157EV30LL-45ZSXIT 概述 CY62157EV30LL-45ZSXIT是一款由赛普拉斯半导体(Cypress Semiconductor)公司制造的高性能SRAM(静态随机存取存储器),专为高密度、高速度的应用而设计。该芯片采用了高效的CMOS工艺,相比于传统的存储器,其在功耗、速度以及整体性能上具备显著优势。CY62157EV30LL-45ZSXIT主要广泛用于嵌入式系统、消费电子、通信设备及其他需要快速存储和访问的应用场合。 详细参数 CY62157EV30LL-45ZSXIT的关键特性包括: - 存储容量:该芯片提供了2M x 8位的存储容量,能够满足大多数应用的数据存储需求。 - 读写速度:其访问时间能够达到45纳秒,使其适合高频率的操作。 - 操作电压:芯片工作在3.0V至3.6V的电源范围,适合低功耗电子产品。 - 功耗:在静态状态下,芯片的功耗非常低...

产品型号CY62157EV30LL-45ZSXIT的Datasheet PDF文件预览

CY62157EV30 MoBL®  
8 Mbit (512K x 16) Static RAM  
advanced circuit design to provide ultra low active current. This  
is ideal for providing More Battery Life(MoBL®) in portable  
applications such as cellular telephones. The device also has an  
automatic power down feature that significantly reduces power  
consumption when addresses are not toggling. Place the device  
into standby mode when deselected (CE1 HIGH or CE2 LOW or  
both BHE and BLE are HIGH). The input or output pins (IO0  
through IO15) are placed in a high impedance state when the  
device is deselected (CE1HIGH or CE2 LOW), the outputs are  
disabled (OE HIGH), Byte High Enable and Byte Low Enable are  
disabled (BHE, BLE HIGH), or a write operation is active (CE1  
LOW, CE2 HIGH and WE LOW).  
Features  
TSOP I Package Configurable as 512K x 16 or 1M x 8 SRAM  
High Speed: 45 ns  
Temperature Ranges  
Industrial: –40°C to +85°C  
Automotive-A: –40°C to +85°C  
Automotive-E: –40°C to +125°C  
Wide Voltage Range: 2.20V to 3.60V  
Pin Compatible with CY62157DV30  
Ultra Low Standby Power  
To write to the device, take Chip Enable (CE1 LOW and CE2  
HIGH) and Write Enable (WE) inputs LOW. If Byte Low Enable  
(BLE) is LOW, then data from IO pins (IO0 through IO7) is written  
into the location specified on the address pins (A0 through A18).  
If Byte High Enable (BHE) is LOW, then data from IO pins (IO8  
through IO15) is written into the location specified on the address  
pins (A0 through A18).  
Typical standby current: 2 μA  
Maximum standby current: 8 μA (Industrial)  
Ultra Low Active Power  
Typical active current: 1.8 mA at f = 1 MHz  
To read from the device, take Chip Enable (CE1 LOW and CE2  
HIGH) and Output Enable (OE) LOW while forcing the Write  
Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data  
from the memory location specified by the address pins appear  
on IO0 to IO7. If Byte High Enable (BHE) is LOW, then data from  
memory appears on IO8 to IO15. See the Truth Table on page 10  
for a complete description of read and write modes.  
Easy Memory Expansion with CE1, CE2, and OE Features  
Automatic Power Down when Deselected  
CMOS for Optimum Speed and Power  
Available in Pb-free and non Pb-free 48-Ball VFBGA, Pb-free  
44-Pin TSOP II and 48-Pin TSOP I Packages  
For best practice recommendations, refer to the Cypress  
application note AN1064, SRAM System Guidelines.  
Functional Description  
The CY62157EV30 is a high performance CMOS static RAM  
organized as 512K words by 16 bits. This device features  
Logic Block Diagram  
DATA IN DRIVERS  
A10  
A 9  
A 8  
A 7  
A 6  
A 5  
A 4  
512K × 16/1M x 8  
RAM Array  
IO0–IO7  
A 3  
IO8–IO15  
A 2  
A 1  
A 0  
COLUMN DECODER  
BYTE  
CE2  
CE  
BHE  
WE  
1
PowerDown  
Circuit  
CE2  
CE  
BHE  
BLE  
1
OE  
BLE  
Cypress Semiconductor Corporation  
Document #: 38-05445 Rev. *F  
198 Champion Court  
San Jose  
,
CA 95134-1709  
408-943-2600  
Revised June 26, 2009  
[+] Feedback  
CY62157EV30 MoBL®  
Pin Configuration  
Figure 1. 48-Ball VFBGA (Top View) [2]  
Figure 2. 44-Pin TSOP II (Top View) [3]  
1
3
4
5
2
6
A
A
A
A
A
1
2
3
4
5
6
7
8
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
4
3
5
6
A
A
A
A2  
CE2  
A0  
A3  
A5  
A1  
A4  
A6  
7
BLE OE  
A
B
C
2
1
OE  
BHE  
BLE  
IO  
15  
IO  
14  
IO  
0
IO8  
IO0  
IO2  
CE1  
IO1  
BHE  
CE  
IO  
0
IO9  
IO10  
IO  
1
IO  
2
9
13  
IO  
3
IO  
V
10  
11  
12  
13  
14  
15  
16  
V
CC  
IO11 A17  
D
V
SS  
A7  
IO3  
IO4  
IO5  
12  
V
CC  
SS  
V
SS  
V
CC  
IO  
IO  
IO  
IO  
A16  
A15  
A13  
A10  
V
SS  
IO12  
V
CC  
NC  
A14  
A12  
A9  
E
F
IO  
4
5
6
7
11  
10  
IO  
IO  
IO  
IO14 IO13  
IO6  
IO7  
NC  
9
8
WE 17  
A
9
G
H
8
IO15  
A18  
NC  
A8  
WE  
A11  
A
A
A
A
A
18  
19  
20  
21  
22  
A
18  
17  
16  
15  
A
A
A
A
10  
11  
12  
13  
14  
Figure 3. 48-Pin TSOP I (512K x 16/1M x 8) (Top View) [2, 4]  
A15  
A14  
A13  
A12  
A11  
A10  
A9  
A8  
NC  
DNU 10  
WE  
CE2  
DNU 13  
BHE 14  
BLE  
A18  
A17  
A7  
A6  
A5  
1
2
3
4
5
6
7
8
9
48  
47  
46  
45  
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
A16  
BYTE  
Vss  
IO15/A19  
IO7  
IO14  
IO6  
IO13  
IO5  
IO12  
IO4  
Vcc  
IO11  
IO3  
IO10  
IO2  
IO9  
IO1  
IO8  
IO0  
OE  
Vss  
CE1  
A0  
11  
12  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
A4  
A3  
A2  
A1  
Product Portfolio  
Power Dissipation  
Operating ICC, (mA)  
f = 1 MHz f = fmax  
Typ [1] Max Typ [1] Max  
Speed  
(ns)  
VCC Range (V)  
Standby, ISB2  
Product  
Range  
(μA)  
Min  
2.2  
2.2  
Typ [1]  
3.0  
Max  
Typ [1]  
Max  
8
CY62157EV30LL  
Ind’l/Auto-A  
Auto-E  
3.6  
3.6  
45  
55  
1.8  
1.8  
3
4
18  
18  
25  
35  
2
2
3.0  
30  
Notes  
1. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V = V  
, T = 25°C.  
A
CC  
CC(typ)  
2. NC pins are not connected on the die.  
3. The 44-TSOP II package has only one chip enable (CE) pin.  
4. The BYTE pin in the 48-TSOP I package must be tied HIGH to use the device as a 512K × 16 SRAM. The 48-TSOP I package can also be used as a 1M × 8  
SRAM by tying the BYTE signal LOW. In the 1M x 8 configuration, Pin 45 is A19, while BHE, BLE and IO8 to IO14 pins are not used (DNU).  
Document #: 38-05445 Rev. *F  
Page 2 of 15  
[+] Feedback  
 
 
 
 
CY62157EV30 MoBL®  
DC Input Voltage [5, 6]........... –0.3V to 3.9V (VCC max + 0.3V)  
Output Current into Outputs (LOW) ............................ 20 mA  
Maximum Ratings  
Exceeding the maximum ratings may impair the useful life of the  
device. User guidelines are not tested.  
Static Discharge Voltage .......................................... > 2001V  
(MIL-STD-883, Method 3015)  
Storage Temperature ................................ –65°C to + 150°C  
Latch Up Current ................................................... > 200 mA  
Ambient Temperature with  
Power Applied .......................................... –55°C to + 125°C  
Operating Range  
Supply Voltage to Ground  
Potential ............................... –0.3V to 3.9V (VCCmax + 0.3V)  
Ambient  
Temperature  
[7]  
Device  
Range  
VCC  
DC Voltage Applied to Outputs  
CY62157EV30LL Ind’l/Auto-A –40°C to +85°C  
2.2V to  
3.6V  
in High-Z State [5, 6] ............... –0.3V to 3.9V (VCCmax + 0.3V)  
Auto-E  
–40°C to +125°C  
Electrical Characteristics  
Over the Operating Range  
45 ns (Ind’l/Auto-A)  
55 ns (Auto-E)  
Parameter Description  
Test Conditions  
IOH = –0.1 mA  
Unit  
Min  
2.0  
2.4  
Typ [1]  
Max  
Min  
Typ [1]  
Max  
VOH  
VOL  
VIH  
Output HIGH  
Voltage  
2.0  
2.4  
V
V
V
V
IOH = –1.0 mA, VCC > 2.70V  
IOL = 0.1 mA  
Output LOW  
Voltage  
0.4  
0.4  
0.4  
0.4  
IOL = 2.1mA, VCC > 2.70V  
VCC = 2.2V to 2.7V  
Input HIGH  
Voltage  
1.8  
2.2  
VCC + 0.3 1.8  
VCC + 0.3 2.2  
VCC + 0.3  
VCC + 0.3  
V
V
VCC = 2.7V to 3.6V  
VIL  
Input LOW  
Voltage  
VCC = 2.2V to 2.7V  
VCC = 2.7V to 3.6V  
GND < VI < VCC  
–0.3  
–0.3  
–1  
0.6  
0.8  
+1  
–0.3  
–0.3  
–4  
0.6  
0.8  
+4  
V
V
IIX  
Input Leakage  
Current  
μA  
IOZ  
ICC  
Output Leakage GND < VO < VCC, Output Disabled  
Current  
–1  
+1  
–4  
+4  
μA  
VCC Operating  
Supply Current  
f = fmax = 1/tRC VCC = VCCmax  
18  
25  
3
18  
35  
4
IOUT = 0 mA  
mA  
f = 1 MHz  
1.8  
1.8  
CMOS levels  
ISB1  
Automatic CE  
Power Down  
Current —  
2
8
2
30  
μA  
CE1 > VCC 0.2V, CE2 < 0.2V  
VIN > VCC – 0.2V, VIN < 0.2V)  
f = fmax (Address and Data Only),  
f = 0 (OE, BHE, BLE and WE),  
VCC = 3.60V  
CMOS Inputs  
[8]  
ISB2  
Automatic CE  
Power Down  
Current —  
2
8
2
30  
μA  
CE1 > VCC – 0.2V or CE2 < 0.2V,  
V
IN > VCC – 0.2V or VIN < 0.2V,  
f = 0, VCC = 3.60V  
CMOS Inputs  
Notes  
5.  
6.  
V
V
= –2.0V for pulse durations less than 20 ns.  
IL(min)  
= V + 0.75V for pulse durations less than 20 ns.  
IH(max)  
CC  
7. Full device AC operation assumes a 100 μs ramp time from 0 to V (min) and 200 μs wait time after V stabilization.  
cc  
CC  
8. Only chip enables (CE and CE ), byte enables (BHE and BLE) and BYTE (48 TSOP I only) need to be tied to CMOS levels to meet the I / I spec. Other inputs  
1
2
SB2 CCDR  
can be left floating.  
9. Tested initially and after any design or process changes that may affect these parameters.  
Document #: 38-05445 Rev. *F  
Page 3 of 15  
[+] Feedback  
 
 
 
 
 
CY62157EV30 MoBL®  
Capacitance  
Tested initially and after any design or process changes that may affect these parameters.  
Parameter  
CIN  
Description  
Test Conditions  
TA = 25°C, f = 1 MHz,  
CC = VCC(typ)  
Max  
10  
Unit  
pF  
Input Capacitance  
Output Capacitance  
V
COUT  
10  
pF  
Thermal Resistance  
Tested initially and after any design or process changes that may affect these parameters.  
Parameter  
Description  
Test Conditions  
BGA  
TSOP I  
TSOP II  
Unit  
ΘJA  
Thermal Resistance Still Air, soldered on a 3 × 4.5 inch,  
(Junction to Ambient) two-layer printed circuit board  
72  
74.88  
76.88  
°C/W  
ΘJC  
Thermal Resistance  
(Junction to Case)  
8.86  
8.6  
13.52  
°C/W  
Figure 4. AC Test Loads and Waveforms  
R1  
ALL INPUT PULSES  
VCC  
OUTPUT  
VCC  
90%  
90%  
10%  
10%  
GND  
Fall Time = 1 V/ns  
Rise Time = 1 V/ns  
R2  
30 pF  
INCLUDING  
JIG AND  
SCOPE  
Equivalent to:  
THÉVENIN EQUIVALENT  
RTH  
OUTPUT  
VTH  
Parameters  
2.5V  
16667  
15385  
8000  
1.20  
3.0V  
Unit  
Ω
Ω
Ω
V
R1  
R2  
1103  
1554  
645  
RTH  
VTH  
1.75  
Document #: 38-05445 Rev. *F  
Page 4 of 15  
[+] Feedback  
 
CY62157EV30 MoBL®  
Data Retention Characteristics  
Over the Operating Range  
Parameter  
Description  
Conditions  
Min Typ [1] Max Unit  
VDR  
VCC for Data Retention  
Data Retention Current  
1.5  
V
[8]  
VCC= 1.5V, CE1 > VCC – 0.2V,  
CE < 0.2V VIN > VCC – 0.2V or VIN < 0.2V  
Ind’l/Auto-A  
Auto-E  
2
5
μA  
ICCDR  
,
2
30  
[9]  
tCDR  
Chip Deselect to Data  
Retention Time  
0
ns  
ns  
[10]  
tR  
Operation Recovery Time  
tRC  
Data Retention Waveform  
Figure 5. Data Retention Waveform [11]  
DATA RETENTION MODE  
VCC(min)  
tR  
VCC(min)  
tCDR  
> 1.5V  
VDR  
VCC  
CE1 or  
BHE.BLE  
or  
CE2  
Notes  
10. Full device operation requires linear V ramp from V to V  
11. BHE.BLE is the AND of both BHE and BLE. Deselect the chip by either disabling chip enable signals or by disabling both BHE and BLE.  
> 100 μs or stable at V  
> 100 μs.  
CC(min)  
CC  
DR  
CC(min)  
Document #: 38-05445 Rev. *F  
Page 5 of 15  
[+] Feedback  
 
 
CY62157EV30 MoBL®  
Switching Characteristics  
Over the Operating Range[12, 13]  
45 ns (Ind’l/Auto-A)  
55 ns (Auto-E)  
Unit  
Parameter  
Description  
Min  
Max  
Min  
Max  
Read Cycle  
tRC  
Read Cycle Time  
45  
55  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
tAA  
Address to Data Valid  
45  
55  
tOHA  
tACE  
tDOE  
tLZOE  
tHZOE  
tLZCE  
tHZCE  
Data Hold from Address Change  
CE1 LOW and CE2 HIGH to Data Valid  
OE LOW to Data Valid  
OE LOW to LOW-Z[14]  
OE HIGH to High-Z[14, 15]  
10  
10  
45  
22  
55  
25  
5
5
18  
18  
20  
20  
CE1 LOW and CE2 HIGH to Low-Z[14]  
10  
10  
CE1 HIGH and CE2 LOW to High-Z[14,  
15]  
tPU  
tPD  
CE1 LOW and CE2 HIGH to Power Up  
0
0
ns  
ns  
CE1 HIGH and CE2 LOW to Power  
Down  
45  
45  
55  
55  
tDBE  
BLE/BHE LOW to Data Valid  
BLE/BHE LOW to Low-Z[14, 16]  
BLE/BHE HIGH to HIGH-Z[14, 15]  
ns  
ns  
ns  
tLZBE  
5
10  
55  
tHZBE  
Write Cycle[17]  
18  
20  
tWC  
Write Cycle Time  
45  
ns  
tSCE  
tAW  
tHA  
tSA  
CE1 LOW and CE2 HIGH to Write End  
Address Setup to Write End  
35  
35  
40  
40  
ns  
ns  
Address Hold from Write End  
Address Setup to Write Start  
0
0
0
0
ns  
ns  
tPWE  
tBW  
tSD  
WE Pulse Width  
35  
35  
25  
0
40  
40  
25  
0
ns  
ns  
ns  
ns  
BLE/BHE LOW to Write End  
Data Setup to Write End  
Data Hold from Write End  
tHD  
tHZWE  
tLZWE  
WE LOW to High-Z[14, 15]  
WE HIGH to Low-Z[14]  
18  
20  
ns  
ns  
10  
10  
Notes  
12. Test conditions for all parameters other than tri-state parameters assume signal transition time of 3 ns or less, timing reference levels of V  
/2, input pulse  
CC(typ)  
levels of 0 to V  
, and output loading of the specified I /I as shown in the AC Test Loads and Waveforms on page 4.  
CC(typ)  
OL OH  
13. AC timing parameters are subject to byte enable signals (BHE or BLE) not switching when chip is disabled. See application note AN13842 for further clarification.  
14. At any temperature and voltage condition, t is less than t , t is less than t , t is less than t , and t is less than t for any device.  
HZCE  
LZCE HZBE  
LZBE HZOE  
LZOE  
HZWE  
LZWE  
15. t  
, t  
, t  
, and t  
transitions are measured when the outputs enter a high-impedance state.  
HZOE HZCE HZBE  
HZWE  
16. If both byte enables are toggled together, this value is 10 ns.  
17. The internal write time of the memory is defined by the overlap of WE, CE = V , BHE, BLE or both = V , and CE = V . All signals must be active to initiate a  
IL  
IL  
2
IH  
write and any of these signals can terminate a write by going inactive. The data input setup and hold timing must be referenced to the edge of the signal that  
terminates the write.  
Document #: 38-05445 Rev. *F  
Page 6 of 15  
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CY62157EV30 MoBL®  
Switching Waveforms  
Figure 6 shows Address Transition Controlled read cycle waveforms.[18, 19]  
Figure 6. Read Cycle No. 1  
t
RC  
ADDRESS  
DATA OUT  
t
AA  
t
OHA  
PREVIOUS DATA VALID  
DATA VALID  
Figure 7 shows OE Controlled read cycle waveforms. [19, 20]  
Figure 7. Read Cycle No. 2  
ADDRESS  
tRC  
CE1  
CE2  
tPD  
t
HZCE  
tACE  
BHE/BLE  
OE  
tDBE  
tHZBE  
tLZBE  
tHZOE  
tDOE  
tLZOE  
HIGH  
IMPEDANCE  
HIGH IMPEDANCE  
DATA OUT  
VCC  
SUPPLY  
CURRENT  
DATA VALID  
tLZCE  
ICC  
ISB  
tPU  
50%  
50%  
Notes  
18. The device is continuously selected. OE, CE = V , BHE, BLE, or both = V , and CE = V .  
IH  
1
IL  
IL  
2
19. WE is HIGH for read cycle.  
20. Address valid before or similar to CE , BHE, BLE transition LOW and CE transition HIGH.  
1
2
Document #: 38-05445 Rev. *F  
Page 7 of 15  
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CY62157EV30 MoBL®  
Switching Waveforms (continued)  
Figure 8 shows WE Controlled write cycle waveforms.[17, 21, 22]  
Figure 8. Write Cycle No. 1  
tWC  
ADDRESS  
CE1  
tSCE  
CE2  
tAW  
tHA  
tSA  
tPWE  
WE  
tBW  
BHE/BLE  
OE  
tHD  
tSD  
NOTE 23  
DATA IO  
VALID DATA  
tHZOE  
Figure 9 shows CE1 or CE2 Controlled write cycle waveforms.[17, 21, 22]  
Figure 9. Write Cycle No. 1  
tWC  
ADDRESS  
tSCE  
CE1  
CE2  
tSA  
tAW  
tHA  
tPWE  
WE  
tBW  
BHE/BLE  
OE  
tHD  
tSD  
VALID DATA  
DATA IO  
NOTE 23  
tHZOE  
Notes  
21. Data I/O is high impedance if OE = V  
.
IH  
22. If CE goes HIGH and CE goes LOW simultaneously with WE = V , the output remains in a high impedance state.  
1
2
IH  
23. During this period, the I/Os are in output state. Do not apply input signals.  
Document #: 38-05445 Rev. *F  
Page 8 of 15  
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CY62157EV30 MoBL®  
Switching Waveforms (continued)  
Figure 10 shows WE Controlled, OE LOW write cycle waveforms.[22]  
Figure 10. Write Cycle No. 3  
tWC  
ADDRESS  
CE1  
tSCE  
CE2  
tBW  
BHE/BLE  
tAW  
tHA  
tSA  
tPWE  
WE  
tSD  
tHD  
NOTE 23  
DATA IO  
VALID DATA  
tLZWE  
tHZWE  
Figure 11 shows BHE/BLE Controlled, OE LOW write cycle waveforms.[22]  
Figure 11. Write Cycle No. 4  
tWC  
ADDRESS  
CE1  
CE2  
tSCE  
tAW  
tHA  
tBW  
BHE/BLE  
WE  
tSA  
tPWE  
tSD  
VALID DATA  
tHD  
NOTE 23  
DATA IO  
Document #: 38-05445 Rev. *F  
Page 9 of 15  
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CY62157EV30 MoBL®  
Truth Table  
CE1  
H
CE2  
X
WE  
X
OE  
X
BHE  
X
BLE  
X
Inputs/Outputs  
High-Z  
Mode  
Deselect/Power Down  
Deselect/Power Down  
Deselect/Power Down  
Read  
Power  
Standby (ISB  
Standby (ISB  
Standby (ISB  
)
)
)
X
L
X
X
X
X
High-Z  
X
X
X
X
H
H
High-Z  
L
H
H
L
L
L
Data Out (IO0–IO15  
)
Active (ICC  
)
)
L
H
H
L
H
L
Data Out (IO0–IO7);  
High-Z (IO8–IO15  
Read  
Active (ICC  
)
L
H
H
L
L
H
High-Z (IO0–IO7);  
Data Out (IO8–IO15  
Read  
Active (ICC  
)
)
L
L
L
L
L
H
H
H
H
H
H
H
H
L
H
H
H
X
X
L
H
L
H
L
L
L
L
High-Z  
High-Z  
High-Z  
Output Disabled  
Output Disabled  
Output Disabled  
Write  
Active (ICC  
Active (ICC  
Active (ICC  
Active (ICC  
Active (ICC  
)
)
)
)
)
L
Data In (IO0–IO15)  
L
H
Data In (IO0–IO7);  
High-Z (IO8–IO15)  
Write  
L
H
L
X
L
H
High-Z (IO0–IO7);  
Data In (IO8–IO15)  
Write  
Active (ICC  
)
Ordering Information  
Speed  
(ns)  
Package  
Diagram  
Operating  
Range  
Package Type  
Ordering Code  
45  
CY62157EV30LL-45BVI  
51-85150 48-ball Very Fine Pitch Ball Grid Array  
Industrial  
CY62157EV30LL-45BVXI  
CY62157EV30LL-45ZSXI  
CY62157EV30LL-45ZXI  
CY62157EV30LL-45BVXA  
CY62157EV30LL-45ZSXA  
CY62157EV30LL-45ZXA  
CY62157EV30LL-55ZSXE  
CY62157EV30LL-55ZXE  
51-85150 48-ball Very Fine Pitch Ball Grid Array (Pb-free)  
51-85087 44-pin Thin Small Outline Package Type II (Pb-free)  
51-85183 48-pin Thin Small Outline Package Type I (Pb-free)  
51-85150 48-ball Very Fine Pitch Ball Grid Array (Pb-free)  
51-85087 44-pin Thin Small Outline Package Type II (Pb-free)  
51-85183 48-pin Thin Small Outline Package Type I (Pb-free)  
51-85087 44-pin Thin Small Outline Package Type II (Pb-free)  
51-85183 48-pin Thin Small Outline Package Type I (Pb-free)  
Automotive-A  
Automotive-E  
55  
Contact your local Cypress sales representative for availability of these parts.  
Document #: 38-05445 Rev. *F  
Page 10 of 15  
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CY62157EV30 MoBL®  
Package Diagrams  
Figure 12. 48-Pin VFBGA (6 x 8 x 1 mm), 51-85150  
BOTTOM VIEW  
A1 CORNER  
TOP VIEW  
Ø0.05 M C  
Ø0.25 M C A B  
Ø0.30 0.05ꢀ(48X  
A1 CORNER  
1
2
3
(
5
6
6
5
(
3
2
1
A
A
B
C
D
B
C
D
E
E
F
F
G
G
H
H
1.475  
A
A
0.75  
B
6.00 0.10  
3.75  
B
6.00 0.10  
0.15ꢀ(8X  
SEATING PLANE  
C
51-85150-*D  
Document #: 38-05445 Rev. *F  
Page 11 of 15  
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CY62157EV30 MoBL®  
Package Diagrams (continued)  
Figure 13. 44-Pin TSOP II, 51-85087  
51-85087-*A  
Document #: 38-05445 Rev. *F  
Page 12 of 15  
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CY62157EV30 MoBL®  
Package Diagrams (continued)  
Figure 14. 48-Pin TSOP I (12 mm x 18.4 mm x 1.0 mm), 51-85183  
DIMENSIONS IN INCHES[MM] MIN.  
MA8.  
JEDEC # MO-1(2  
0.037[0.95]  
0.0(1[1.05]  
N
1
0.020[0.50]  
TYP.  
0.(72[12.00]  
0.007[0.17]  
0.011[0.27]  
0.002[0.05]  
0.006[0.15]  
0.72( [14.(0]  
0.747[20.00]  
0.0(7[1.20]  
MA8.  
0.00([0.10]  
0.004[0.21]  
0.010[0.25]  
GAUGE PLANE  
51-85183-*A  
0.020[0.50]  
0.024[0.70]  
0°-5°  
Document #: 38-05445 Rev. *F  
Page 13 of 15  
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CY62157EV30 MoBL®  
Document History Page  
Document Title: CY62157EV30 MoBL®, 8 Mbit (512K x 16) Static RAM  
Document Number: 38-05445  
Orig. of Submission  
Rev.  
ECN No.  
Description of Change  
Change  
Date  
**  
202940  
291272  
AJU  
See ECN New Data Sheet  
*A  
SYT  
See ECN Converted from Advance Information to Preliminary  
Removed 48-TSOP I Package and the associated footnote  
Added footnote stating 44 TSOP II Package has only one CE on Page # 2  
Changed VCC stabilization time in footnote #7 from 100 μs to 200 μs  
Changed ICCDR from 4 to 4.5 μA  
Changed tOHA from 6 to 10 ns for both 35 and 45 ns Speed Bins  
Changed tDOE from 15 to 18 ns for 35 ns Speed Bin  
Changed tHZOE, tHZBE and tHZWE from 12 and 15 ns to 15 and 18 ns for 35 and 45  
ns Speed Bins respectively  
Changed tHZCE from 12 and 15 ns to 18 and 22 ns for 35 and 45 ns Speed Bins  
respectively  
Changed tSCE, tAW and tBW from 25 and 40 ns to 30 and 35 ns for 35 and 45 ns Speed  
Bins respectively  
Changed tSD from 15 and 20 ns to 18 and 22 ns for 35 and 45 ns Speed Bins respectively  
Added Lead-Free Package Information  
*B  
444306  
NXR  
See ECN Converted from Preliminary to Final.  
Changed ball E3 from DNU to NC  
Removed redundant footnote on DNU.  
Removed 35 ns speed bin  
Removed “L” bin  
Added 48 pin TSOP I package  
Added Automotive product information.  
Changed the ICC Typ value from 16 mA to 18 mA and ICC Max value from 28 mA  
to 25 mA for test condition f = fax = 1/tRC.  
Changed the ICC Max value from 2.3 mA to 3 mA for test condition f = 1MHz.  
Changed the ISB1 and ISB2 Max value from 4.5 μA to 8 μA and Typ value from 0.9  
μA to 2 μA respectively.  
Modified ISB1 test condition to include BHE, BLE  
Updated Thermal Resistance table.  
Changed Test Load Capacitance from 50 pF to 30 pF.  
Added Typ value for ICCDR .  
Changed the ICCDR Max value from 4.5 μA to 5 μA  
Corrected tR in Data Retention Characteristics from 100 μs to tRC ns.  
Changed tLZOE from 3 to 5  
Changed tLZCE from 6 to 10  
Changed tHZCE from 22 to 18  
Changed tLZBE from 6 to 5  
Changed tPWE from 30 to 35  
Changed tSD from 22 to 25  
Changed tLZWE from 6 to 10  
Added footnote #15  
Updated the ordering Information and replaced the Package Name column with  
Package Diagram.  
*C  
*D  
467052  
925501  
NXR  
VKN  
See ECN Modified Data sheet to include x8 configurability.  
Updated the Ordering Information table  
See ECN Removed Automotive-E information  
Added Preliminary Automotive-A information  
Added footnote #10 related to ISB2 and ICCDR  
Added footnote #15 related AC timing parameters  
*E  
1045801  
VKN  
See ECN Converted Automotive-A specs from preliminary to final  
Updated footnote #9  
Document #: 38-05445 Rev. *F  
Page 14 of 15  
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CY62157EV30 MoBL®  
Document Title: CY62157EV30 MoBL®, 8 Mbit (512K x 16) Static RAM  
Document Number: 38-05445  
Orig. of Submission  
Rev.  
ECN No.  
Description of Change  
Change  
Date  
06/26/09 Added Automotive-E information  
Included -45ZXA/-55ZSXE/-55ZXE parts in the Ordering Information table  
*F  
2724889 NXR/AESA  
Sales, Solutions, and Legal Information  
Worldwide Sales and Design Support  
Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office  
closest to you, visit us at cypress.com/sales.  
Products  
PSoC  
psoc.cypress.com  
clocks.cypress.com  
wireless.cypress.com  
memory.cypress.com  
image.cypress.com  
Clocks & Buffers  
Wireless  
Memories  
Image Sensors  
© Cypress Semiconductor Corporation, 2004-2009. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use  
of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used  
for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use  
as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support  
systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.  
Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign),  
United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of,  
and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress  
integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without  
the express written permission of Cypress.  
Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES  
OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not  
assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where  
a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer  
assumes all risk of such use and in doing so indemnifies Cypress against all charges.  
Use may be limited by and subject to the applicable Cypress software license agreement.  
Document #: 38-05445 Rev. *F  
Revised June 26, 2009  
Page 15 of 15  
MoBL is aregisteredtrademark andMore Battery Lifeis atrademark of Cypress Semiconductor. All product andcompany names mentioned in this document are the trademarks of their respective holders.  
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配单直通车
CY62157EV30LL-45ZSXIT产品参数
型号:CY62157EV30LL-45ZSXIT
是否无铅: 不含铅
是否Rohs认证: 符合
生命周期:Active
包装说明:TSOP2, TSOP44,.46,32
Reach Compliance Code:compliant
ECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41
风险等级:1.17
最长访问时间:45 ns
I/O 类型:COMMON
JESD-30 代码:R-PDSO-G44
JESD-609代码:e4
长度:18.415 mm
内存密度:8388608 bit
内存集成电路类型:STANDARD SRAM
内存宽度:16
湿度敏感等级:3
功能数量:1
端子数量:44
字数:524288 words
字数代码:512000
工作模式:ASYNCHRONOUS
最高工作温度:85 °C
最低工作温度:-40 °C
组织:512KX16
输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY
封装代码:TSOP2
封装等效代码:TSOP44,.46,32
封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL
峰值回流温度(摄氏度):260
电源:2.5/3.3 V
认证状态:Not Qualified
座面最大高度:1.194 mm
最大待机电流:0.000005 A
最小待机电流:1.5 V
子类别:SRAMs
最大压摆率:0.025 mA
最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.2 V
标称供电电压 (Vsup):3 V
表面贴装:YES
技术:CMOS
温度等级:INDUSTRIAL
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:GULL WING
端子节距:0.8 mm
端子位置:DUAL
处于峰值回流温度下的最长时间:30
宽度:10.16 mm
Base Number Matches:1
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