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产品型号D5V0F2U5LP37的Datasheet PDF文件预览

D5V0L2B3SO  
2 CHANNEL LOW CAPACITANCE BI-DIRECTIONAL TVS ARRAY  
Features  
Mechanical Data  
Provides ESD Protection per IEC 61000-4-2 Standard:  
Air – ±30kV, Contact – ±30kV  
2 Channels of Bi-Directional ESD Protection  
Low Channel Input Capacitance  
Typically Used in Cellular Handsets, Portable Electronics,  
Communication Systems, Computers and Peripherals  
Case: SOT23  
Case Material: Molded Plastic, “Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe  
(Lead Free Plating). Solderable per MIL-STD-202, Method 208  
Lead Free/RoHS Compliant (Note 1)  
“Green” Device (Note 2)  
Weight: 0.0089 grams (approximate)  
1
3
3
2
1
2
Top View  
Pin Configuration  
Device Schematic  
Ordering Information (Note 3)  
D 5V0 L X B X XXX- XX  
Voltage  
Capacitance  
# of Channels  
Polarity  
# of Pins  
Package  
Packing  
5V0: 5.0 Volts X: Extremely Low (<0.5pF) 1: 1 Channel  
F: Ultra Low (0.5 ~ 1.0pF) 2: 2 Channels  
B: Bidirectional  
(Symmetrical)  
U: Unidirectional  
A: Bidirectional  
(Asymmetrical)  
2: 2 Pins  
3: 3 Pins  
5: 5 Pins  
6: 6 Pins  
8: 8 Pins  
10: 10 Pins  
LP3: X3-DFN0603-2  
LP: X1-DFN1006-2 7B: 7” reel (10Kreel)  
LP4: X2-DFN1006-2  
7: 7” reel (3K/reel)  
P: Very Low (1.1 ~ 10pF) 4: 4 Channels  
13: 13” reel  
L: Low (10.1 ~ 20pF)  
M: Medium (>20pF)  
6: 6 Channels  
WS: SOD323  
T: SOD523/SOT523  
SO: SOT23/SOT25  
W: SOD123/SOT323  
TS: TSOT25/TSOT26  
S: SOT353/SOT363  
V:SOT553/SOT563  
Part Number  
D5V0L2B3SO-7  
Case  
SOT23  
Packaging  
3000/Tape & Reel  
Notes:  
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.  
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.  
3. For packaging details, go to our website at http://www.diodes.com.  
Marking Information  
TB2 = Product Type Marking Code  
YM = Date Code Marking  
Y = Year (ex: Z = 2012)  
TB2  
M = Month (ex: 9 = September)  
Date Code Key  
Year  
2011  
2012  
2013  
2014  
2015  
2016  
2017  
Code  
Y
Z
A
B
C
D
E
Month  
Code  
Jan  
1
Feb  
2
Mar  
3
Apr  
4
May  
5
Jun  
6
Jul  
7
Aug  
8
Sep  
9
Oct  
O
Nov  
N
Dec  
D
1 of 4  
www.diodes.com  
January 2012  
© Diodes Incorporated  
D5V0L2B3SO  
Document number: DS35430 Rev. 5 - 2  
D5V0L2B3SO  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Peak Pulse Power Dissipation  
Symbol  
PPP  
Value  
84  
Unit  
W
Conditions  
8/20μs, Per in Fig. 1  
Peak Pulse Current  
6
A
IPP  
8/20μs, Per in Fig. 1  
ESD Protection – Contact Discharge  
ESD Protection – Air Discharge  
±30  
±30  
kV  
kV  
Standard IEC 61000-4-2  
VESD_Contact  
VESD_Air  
Standard IEC 61000-4-2  
Thermal Characteristics  
Characteristic  
Package Power Dissipation (Note 5)  
Thermal Resistance, Junction to Ambient (Note 5)  
Operating Junction Temperature Range  
Storage Temperature Range  
Symbol  
PD  
Rθ  
Value  
300  
417  
Unit  
mW  
°C/W  
°C  
°C  
JA  
-65 to +150  
-65 to +150  
TJ  
TSTG  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
Reverse Working Voltage  
Symbol  
VRWM  
VBR  
Min  
Typ  
-
Max  
5.0  
8
Unit  
V
Test Conditions  
-
6
-
-
Breakdown Voltage  
7
V
IR = 1.0mA  
VRWM = 5V  
Reverse Leakage Current (Note 6)  
10  
100  
9.0  
10.7  
12.0  
14.0  
-
nA  
V
IR  
-
7.0  
8.7  
10.5  
11.5  
0.2  
I
I
I
I
PP = 1A, tp = 8/20μs  
PP = 3A, tp = 8/20μs  
PP = 5A, tp = 8/20μs  
PP = 6A, tp = 8/20μs  
IR = 1.0A, tp = 8/20μs  
IN = 0V, f = 1MHz  
(Channel to Pin 3)  
-
V
Clamping Voltage (Note 4)  
VCL  
-
V
-
V
Differential Resistance  
-
RDIF  
CT  
V
Channel Input Capacitance  
-
15  
20  
pF  
Notes:  
4. Measured from channel to pin 3; Non-repetitive current pulse per Fig. 1.  
5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at  
http://www.diodes.com.  
6. Short duration pulse test used to minimize self-heating effect.  
100  
100  
75  
50  
50  
25  
0
0
60  
20  
40  
0
25  
50  
150 175 200  
0
75 100 125  
TA, AMBIENT TEMPERATURE (°C)  
t, TIME (  
μs)  
Fig. 1 Typical 8 x 20µs Pulse Waveform  
Fig. 2 Pulse Derating Curve  
2 of 4  
www.diodes.com  
January 2012  
© Diodes Incorporated  
D5V0L2B3SO  
Document number: DS35430 Rev. 5 - 2  
D5V0L2B3SO  
18  
17  
100  
10  
f = 1MHz  
T
= 150°C  
A
16  
15  
T
= 125°C  
A
T
= 85°C  
A
14  
13  
12  
T
= 25°C  
A
T
= -55°C  
A
1
11  
10  
0.1  
0
1
2
3
4
5
6
0
1
2
3
4
5
6
VR, REVERSE VOLTAGE (V)  
VR, REVERSE VOLTAGE (V)  
Fig. 3 Typical Total Capacitance vs. Reverse Voltage  
Fig. 4 Typical Reverse Characteristics  
Package Outline Dimensions  
A
SOT23  
Dim  
A
B
C
D
F
G
H
J
K
Min  
0.37  
1.20  
2.30  
0.89  
0.45  
1.78  
2.80  
0.013 0.10  
0.903 1.10  
-
0.45  
0.085 0.18  
0° 8°  
Max  
0.51  
1.40  
2.50  
1.03 0.915  
0.60 0.535  
Typ  
0.40  
1.30  
2.40  
C
B
2.05  
3.00  
1.83  
2.90  
0.05  
1.00  
0.400  
0.55  
0.11  
-
H
G
M
K
J
K1  
D
K1  
L
M
-
F
L
0.61  
α
All Dimensions in mm  
Suggested Pad Layout  
Y
Dimensions Value (in mm)  
Z
X
Y
C
E
2.9  
0.8  
0.9  
2.0  
1.35  
Z
C
E
X
3 of 4  
www.diodes.com  
January 2012  
© Diodes Incorporated  
D5V0L2B3SO  
Document number: DS35430 Rev. 5 - 2  
D5V0L2B3SO  
IMPORTANT NOTICE  
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS DOCUMENT,  
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE  
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the  
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or  
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume  
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated  
website, harmless against all damages.  
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.  
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and  
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or  
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.  
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings  
noted herein may also be covered by one or more United States, international or foreign trademarks.  
LIFE SUPPORT  
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express  
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:  
A. Life support devices or systems are devices or systems which:  
1. are intended to implant into the body, or  
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the  
labeling can be reasonably expected to result in significant injury to the user.  
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the  
failure of the life support device or to affect its safety or effectiveness.  
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and  
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any  
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related  
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its  
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.  
Copyright © 2012, Diodes Incorporated  
www.diodes.com  
4 of 4  
www.diodes.com  
January 2012  
© Diodes Incorporated  
D5V0L2B3SO  
Document number: DS35430 Rev. 5 - 2  
配单直通车
D5V0H1U2LP1610-7产品参数
型号:D5V0H1U2LP1610-7
是否Rohs认证: 符合
生命周期:Active
包装说明:R-PBCC-N2
Reach Compliance Code:compliant
Factory Lead Time:12 weeks
风险等级:1.75
最小击穿电压:5.5 V
配置:SINGLE
二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:R-PBCC-N2
JESD-609代码:e4
元件数量:1
端子数量:2
最高工作温度:150 °C
最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:CHIP CARRIER
峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL
最大功率耗散:0.5 W
参考标准:IEC-61000-4-2
最大重复峰值反向电压:5 V
表面贴装:YES
技术:AVALANCHE
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:NO LEAD
端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1
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