Technische Information / technical information
IGBT-Module
IGBT-modules
BSM300GA120DLC
IGBT-Wechselrichter / IGBT-inverter
Höchstzulässige Werte / maximum rated values
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
TÝÎ = 25°C
V†Š»
1200
V
Kollektor-Dauergleichstrom
DC-collector current
T† = 80°C
T† = 25°C
I† ÒÓÑ
I†
300
570
A
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t« = 1 ms, T† = 80°C
T† = 25°C
I†ç¢
PÚÓÚ
600
2250
+/-20
A
W
V
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V•Š»
Charakteristische Werte / characteristic values
min. typ. max.
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
I† = 300 A, V•Š = 15 V, TÝÎ = 25°C
I† = 300 A, V•Š = 15 V, TÝÎ = 125°C
V†Š ÙÈÚ
2,10 2,60
2,40 2,90
V
V
Gate-Schwellenspannung
gate threshold voltage
I† = 12,0 mA, V†Š = V•Š, TÝÎ = 25°C
V•ŠÚÌ
Q•
4,5
5,5
3,20
1,3
6,5
V
µC
Â
Gateladung
gate charge
V•Š = -15 V ... +15 V
Interner Gatewiderstand
internal gate resistor
TÝÎ = 25°C
R•ÍÒÚ
CÍþÙ
CØþÙ
I†Š»
I•Š»
Eingangskapazität
input capacitance
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V
V†Š = 1200 V, V•Š = 0 V, TÝÎ = 25°C
V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C
22,0
1,45
nF
nF
mA
nA
Rückwirkungskapazität
reverse transfer capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
5,0
Gate-Emitter Reststrom
gate-emitter leakage current
400
Einschaltverzögerungszeit (ind. Last)
turn-on delay time (inductive load)
I† = 300 A, V†Š = 600 V
V•Š = ±15 V, R•ÓÒ = 3,3 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓÒ = 3,3 Â, TÝÎ = 125°C
tÁ ÓÒ
tØ
0,09
0,09
µs
µs
Anstiegszeit (induktive Last)
rise time (inductive load)
I† = 300 A, V†Š = 600 V
V•Š = ±15 V, R•ÓÒ = 3,3 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓÒ = 3,3 Â, TÝÎ = 125°C
0,09
0,10
µs
µs
Abschaltverzögerungszeit (ind. Last)
turn-off delay time (inductive load)
I† = 300 A, V†Š = 600 V
V•Š = ±15 V, R•ÓËË = 3,3 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓËË = 3,3 Â, TÝÎ = 125°C
tÁ ÓËË
tË
0,54
0,59
µs
µs
Fallzeit (induktive Last)
fall time (inductive load)
I† = 300 A, V†Š = 600 V
V•Š = ±15 V, R•ÓËË = 3,3 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓËË = 3,3 Â, TÝÎ = 125°C
0,06
0,09
µs
µs
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
I† = 300 A, V†Š = 600 V, L» = 90 nH
V•Š = ±15 V, R•ÓÒ = 3,3 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓÒ = 3,3 Â, TÝÎ = 125°C
EÓÒ
EÓËË
mJ
mJ
29,0
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
I† = 300 A, V†Š = 600 V, L» = 90 nH
V•Š = ±15 V, R•ÓËË = 3,3 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓËË = 3,3 Â, TÝÎ = 125°C
mJ
mJ
39,0
Kurzschlußverhalten
SC data
t« ù 10 µs, V•Š ù 15 V
TÝÎù125°C, V†† = 900 V, V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt
IȠ
1800
A
Innerer Wärmewiderstand
thermal resistance, junction to case
pro IGBT
per IGBT
RÚÌœ†
0,055 K/W
prepared by: Mark Münzer
date of publication: 2003-5-21
revision: 3.1
approved by: Wilhelm Rusche
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