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产品型号DM-106B的Datasheet PDF文件预览

DM-106B  
Magnetoresistance Element  
For the availability of this product, please contact the sales office.  
Description  
M-110 (Plastic)  
The DM-106B is a highly sensitive magneto-  
resistance element composed of an evaporated  
ferromagnetic alloy on a silicon substrate. (The  
element can be used for automatic shut off of tape  
recorders, as a contactless switch, and as a general  
detector of rotational motion.)  
Features  
Low power consumption  
11 mW (Typ.)  
VCC=5 V  
Low magnetic field and high sensitivity  
80 mVp-p (Typ.)  
VCC=5 V  
H=8000 A/m  
High reliability  
Ensured through silicon  
Nitride protective filming  
Structure  
Thin-film nickel-cobalt magnetic alloy on silicon  
substrate  
Absolute Maximum Ratings (Ta=25 °C)  
Supply voltage  
VCC  
Topr  
Tstg  
10  
V
°C  
°C  
Operating temperature  
Storage temperature  
–40 to +100  
–50 to +125  
Recommended Operating Supply voltage  
Electrical Characteristics  
5
V
(Ta=25 °C)  
Item  
Symbol  
RT  
Condition  
Min.  
1.4  
Typ.  
2.3  
Max.  
Unit  
VCC=5 V , H=8000 A/m  
Total resistance  
3.7  
k  
Revoiving magnetic field  
VCC=5 V , H=8000 A/m  
Revoiving magnetic field  
VCC=5 V , H=8000 A/m  
Revoiving magnetic field  
Midpoint potential  
Output voltage  
VC  
VO  
2.45  
60  
2.50  
80  
2.55  
V
mVp-p  
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by  
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the  
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.  
—1—  
E60142D5X-TE  
DM-106B  
Equivalent Circuit  
H
θ
RA : Resistance reduces as the  
magnetic field revolves.  
RA  
RB  
min  
RB  
RA max  
RB : Resistance increases as the  
magnetic field revolves.  
2
3
1
2
3
1
Introduction  
1. Power supplying pin output pin  
106  
B
3 2 1  
1
2
3
RA  
RB  
VCC  
2. Sensitive direction vs. Midpoint potential  
c
d
b
Direction of Magnetic-flux  
Incidence  
e
a
Midpoint potential  
Sensitive  
a
e
Non-sensitive  
d
b
VCC  
2
HS  
Direction of Magnetic-flux  
Incidence  
H
c
Changes occur to the output voltage at the saturation region  
of V-H curve according to the direction of magnetic flux.  
These changes provide for the operation.  
• With one rotation of magnetic flux, signals for 2 periods are  
obtained.  
Useful Region  
—2—  
DM-106B  
Applications  
1. Detection of revolution  
N
N
S
N
S
S
N
N
S
S
N
S
2. Position detecting  
Circuits  
S
N
VCC  
r1  
r2  
Differenntial  
Amplifier  
3. Bridge Circuits  
106  
B
106  
B
Output  
By coupling 2 pieces back to back and sticking them  
together in a gridge, the output voltage is doubled.  
Notes on Application  
• Execute the solder to the lead line within 10 seconds at a temperature below 260 °  
• To Fix the ELEMENTS : When glue is used, DO NOT apply mechanical stress to the elements.  
—3—  
DM-106B  
Midpoint potential vs. Direction of magnetic-flux incidence  
Midpoint potential vs. Magnetic field intensity  
VCC=5V  
2.55  
2.54  
2.53  
2.52  
2.51  
2.55  
2.54  
2.53  
2.52  
2.51  
1. VCC=5V  
H=12000A/m  
2. Output  
3. GND  
2.50  
2.49  
2.48  
2.47  
2.50  
2.49  
2.48  
H
θ
106B  
2.47  
2.46  
2.45  
2.46  
2.45  
3 2 1  
0
4000  
8000  
12000 16000  
225  
0
45  
90  
135  
180  
H-Revolving magnetic field intensity (A/m)  
θ-Direction of magnetic-flux incidence (deg)  
Total resistance, output voltage vs. Temperature  
Output voltage vs. Magnetic field intensity  
100  
80  
H=8000A/m  
(Revolving magnetic field)  
VCC=5V  
VCC=5V  
120  
110  
100  
3.0  
2.5  
2.0  
60  
RT  
VO  
90  
80  
70  
60  
40  
20  
0
50  
1.5  
4000  
8000  
0
12000  
16000  
—50 —25  
0
25 50 75 100 125 150  
H-Revolving magnetic field intensity (A/m)  
Ta-Ambient temperature (°C)  
Derating Curve  
5
4
3
VCC=10V  
2
1
0
0
40  
160  
—40  
80  
120  
Ta-Ambient temperature (°C)  
—4—  
DM-106B  
Package Outline Unit : mm  
M-110  
4.0 ± 0.2  
0.7  
0.5  
0.5  
0.8  
0.6  
0.4  
1.27  
1.27  
SONY CODE  
EIAJ CODE  
M-110  
JEDEC CODE  
0.09g  
PACKAGE WEIGHT  
—5—  
配单直通车
DM-111A产品参数
型号:DM-111A
是否Rohs认证: 不符合
生命周期:Obsolete
IHS 制造商:SONY CORP
零件包装代码:SIP
包装说明:SIP,
针数:3
Reach Compliance Code:unknown
HTS代码:8542.39.00.01
风险等级:5.92
Is Samacsys:N
模拟集成电路 - 其他类型:ANALOG CIRCUIT
JESD-30 代码:R-PSIP-T3
JESD-609代码:e0
长度:7 mm
功能数量:1
端子数量:3
最高工作温度:80 °C
最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY
封装代码:SIP
封装形状:RECTANGULAR
封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified
座面最大高度:8.4 mm
标称供电电压 (Vsup):5 V
表面贴装:NO
温度等级:OTHER
端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE
端子节距:2.54 mm
端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:2 mm
Base Number Matches:1
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