DMG2302U-7原理图各脚功能电路原理芯片引脚定义引脚图及功能-中国IC网-芯三七

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产品型号DMG2302U-7的概述

DMG2302U-7的概述 DMG2302U-7是一款双向N沟道功率MOSFET，适用于各种电子应用，如开关电源、白炽灯、LED驱动以及其他需要高效开关特性的领域。其设计旨在提供较低的开启电阻和较高的电流承载能力，确保了其在高频和高功率应用中的有效性。DMG2302U-7以其优越的性能和可靠的稳定性，成为了电子工程师在设计功率控制电路时的热门选择。 DMG2302U-7的详细参数 DMG2302U-7的主要参数包括： - VDS（漏源电压）：60V - ID（连续漏电流）：30A - RDS(ON)（开启电阻）：典型值为10mΩ在VGS=10V时，20mΩ在VGS=4.5V时。 - VGS（栅源电压）：±20V - 功率耗散：75W（在25°C环境温度下） - 热阻：70°C/W（结到壳体） - 输入电容：约1500pF（VDS=25V，f=1MHz）这些参数使得DMG2302U-7...

产品型号DMG2302U-7的Datasheet PDF文件预览

DMG2302U

N-CHANNEL ENHANCEMENT MODE MOSFET

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Features

Mechanical Data

•

Low On-Resistance

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

Lead Free By Design/RoHS Compliant (Note 1)

"Green" Device (Note 2)

Qualified to AEC-Q101 Standards for High Reliability

•

Case: SOT-23

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020D

Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

Terminals Connections: See Diagram Below

Marking Information: See Page 4

Ordering Information: See Page 4

Weight: 0.008 grams (approximate)

•

Drain

Gate

Source

Internal Schematic

TOP VIEW

Maximum Ratings @T_A= 25°C unless otherwise specified

Characteristic

Drain-Source Voltage

Symbol

V_DSS

Value

±8

Units

Gate-Source Voltage

V_GSS

_A= 25°C

_A= 70°C

Steady

State

4.2

3.4

Continuous Drain Current (Note 3)

Pulsed Drain Current (Note 4)

I_D

I_DM

Thermal Characteristics

Characteristic

Symbol

P_D

Value

Unit

T_A= 25°C

T_A= 70°C

0.8

0.5

Power Dissipation (Note 3)

156

°C/W

°C

Thermal Resistance, Junction to Ambient @T_A= 25°C

Operating and Storage Temperature Range

R_θJA

-55 to +150

_J,T_STG

Notes:

1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB, with minimum recommended pad layout.

4. Repetitive rating, pulse width limited by junction temperature.

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www.diodes.com

June 2009

DMG2302U

Document number: DS31838 Rev. 2 - 2

DMG2302U

Electrical Characteristics @T_A= 25°C unless otherwise specified

Characteristic

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage

Symbol

Min

Typ

Max

Unit

Test Condition

BV_DSS

I_DSS

V_GS= 0V, I_D= 10μA

V_DS= 20V, V_GS= 0V

V_GS= ±8V, V_DS= 0V

Zero Gate Voltage Drain Current TJ = 25°C

Gate-Source Leakage

1.0

μA

±100

I_GSS

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

0.4

1.0

V_GS(th)

V_DS= V_GS, I_D= 50μA

V_GS= 4.5V, I_D= 3.6A

V_GS= 2.5V, I_D= 3.1A

V_DS= 5V, I_D= 3.6A

V_GS= 0V, I_S= 1A

120

mΩ

Static Drain-Source On-Resistance

R_{DS (ON)}

Forward Transfer Admittance

Diode Forward Voltage

DYNAMIC CHARACTERISTICS (Note 6)

Input Capacitance

|Y_fs|

V_SD

0.75

1.0

594.3

64.5

57.7

1.5

C_iss

C_oss

C_rss

R_g

V_DS= 10V, V_GS= 0V,

f = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

V_DS= 0V, V_GS= 0V, f = 1MHz

V_GS= 4.5V, V_DS= 10V,

Total Gate Charge

7.0

Q_g

Gate-Source Charge

Gate-Drain Charge

0.9

Q_gs

Q_gd

t_D(on)

t_r

_D= 3.6A

1.4

Turn-On Delay Time

7.4

Turn-On Rise Time

9.8

V_DD= 10V, V_GS= 4.5V,

R_L= 2.78Ω, R_G= 1.0Ω

Turn-Off Delay Time

28.1

6.7

t_D(off)

t_f

Turn-Off Fall Time

Notes:

5. Short duration pulse test used to minimize self-heating effect.

6. Guaranteed by design. Not subject to production testing.

= 8.0V

= 4.5V

= 3.0V

= 5V

= 2.5V

= 2.0V

= 1.5V

= 150°C

= 125°C

= 85°C

= 25°C

= 1.2V

= -55°C

0.5

1.5

2.5

0.5

1.5

V_DS, DRAIN-SOURCE VOLTAGE (V)

Fig. 1 Typical Output Characteristics

V_GS, GATE SOURCE VOLTAGE (V)

Fig. 2 Typical Transfer Characteristics

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www.diodes.com

June 2009

DMG2302U

Document number: DS31838 Rev. 2 - 2

DMG2302U

0.06

0.055

0.05

0.055

= 4.5V

0.05

0.045

0.04

= 150°C

= 125°C

0.045

0.035

0.04

= 85°C

= 1.8V

0.03

0.025

0.02

0.035

= 25°C

= 2.5V

= 4.5V

0.03

= -55°C

0.025

0.02

0.015

0.01

0.1

I_D, DRAIN-SOURCE CURRENT (A)

Fig. 3 Typical On-Resistance

vs. Drain Current and Gate Voltage

I_D, DRAIN CURRENT (A)

Fig. 4 Typical Drain-Source On-Resistance

vs. Drain Current and Temperature

1.8

1.6

0.06

0.05

= 2.5V

= 5A

1.4

1.2

0.04

0.03

0.02

= 2.5V

= 5A

= 4.5V

= 10A

= 4.5V

= 10A

1.0

0.8

0.6

0.01

-50 -25

75 100 125 150

-50 -25

75 100 125 150

T_J, JUNCTION TEMPERATURE (°C)

Fig. 5 On-Resistance Variation with Temperature

Fig. 6 On-Resistance Variation with Temperature

1.4

1.2

1.0

= 25°C

0.8

0.6

0.4

= 1mA

= 250µA

0.2

-50 -25

75 100 125 150

0.2

0.4

0.6

0.8

1.0

1.2

T_A, AMBIENT TEMPERATURE (°C)

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

V_SD, SOURCE-DRAIN VOLTAGE (V)

Fig. 8 Diode Forward Voltage vs. Current

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www.diodes.com

June 2009

DMG2302U

Document number: DS31838 Rev. 2 - 2

DMG2302U

1,000

100

10,000

1,000

100

= 150°C

= 125°C

iss

oss

= 85°C

rss

= 25°C

f = 1MHz

= -55°C

0.1

10 12 14 16 18 20

V_DS, DRAIN-SOURCE VOLTAGE (V)

Fig. 9 Typical Capacitance

Fig. 10 Typical Drain-Source Leakage Current

vs. Drain-Source Voltage

D = 0.7

D = 0.5

D = 0.3

0.1

D = 0.1

D = 0.9

D = 0.05

D = 0.02

(t) = r(t) * R

θJA

= 157°C/W

θJA

0.01

D = 0.01

P(pk)

D = 0.005

- T = P * R (t)

θJA

D = Single Pulse

Duty Cycle, D = t /t

0.001

0.00001

0.0001

0.001

0.01

0.1

100

1,000

t₁, PULSE DURATION TIME (s)

Fig. 11 Transient Thermal Response

Ordering Information (Note 7)

Part Number

Case

Packaging

DMG2302U-7

SOT-23

3000/Tape & Reel

Notes:

7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

G23 = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: W = 2009)

G23

M = Month (ex: 9 = September)

Date Code Key

Year

2009

2010

2011

2012

2013

2014

2015

Code

Month

Code

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

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www.diodes.com

June 2009

DMG2302U

Document number: DS31838 Rev. 2 - 2

DMG2302U

Package Outline Dimensions

SOT-23

Dim

Min

Max

0.51

1.40

2.50

1.03 0.915

0.60 0.535

Typ

0.40

1.30

2.40

0.37

1.20

2.30

0.89

0.45

1.78

2.80

0.013 0.10

0.903 1.10

2.05

3.00

1.83

2.90

0.05

1.00

0.400

0.55

0.11

0.45

0.085 0.18

0° 8°

0.61

All Dimensions in mm

Suggested Pad Layout

Dimensions Value (in mm)

2.9

0.8

0.9

2.0

1.35

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www.diodes.com

June 2009

DMG2302U

Document number: DS31838 Rev. 2 - 2

DMG2302U

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com

6 of 6

www.diodes.com

June 2009

DMG2302U

Document number: DS31838 Rev. 2 - 2

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DMG2302U-7产品参数

型号:	DMG2302U-7
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Obsolete
IHS 制造商：	DIODES INC
包装说明：	SMALL OUTLINE, R-PDSO-G3
针数：	3
Reach Compliance Code：	compliant
ECCN代码：	EAR99
风险等级：	7.8
Samacsys Confidence：	4
Samacsys Status：	Released
Samacsys PartID：	384997
Samacsys Pin Count：	3
Samacsys Part Category：	MOSFET (N-Channel)
Samacsys Package Category：	SOT23 (3-Pin)
Samacsys Footprint Name：	SOT23
Samacsys Released Date：	2016-10-03 09:50:20
Is Samacsys：	N
其他特性：	HIGH RELIABILITY
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	20 V
最大漏极电流 (Abs) (ID)：	4.2 A
最大漏极电流 (ID)：	4.2 A
最大漏源导通电阻：	0.09 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-G3
JESD-609代码：	e3
湿度敏感等级：	1
元件数量：	1
端子数量：	3
工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	0.8 W
认证状态：	Not Qualified
子类别：	FET General Purpose Powers
表面贴装：	YES
端子面层：	Matte Tin (Sn)
端子形式：	GULL WING
端子位置：	DUAL
处于峰值回流温度下的最长时间：	40
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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产品型号DMG2302U-7的概述

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