DMG3420U-7原理图各脚功能电路原理芯片引脚定义引脚图及功能-中国IC网-芯三七

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产品型号DMG3420U-7的概述

DMG3420U-7芯片概述 DMG3420U-7是一种高效的N沟道MOSFET（场效应晶体管），它广泛应用于各种电子设备和电力管理系统。该芯片具备出色的电流承载能力和低导通电阻，使其在需要高效能的应用场合显得尤为重要。其工作频率高，并能在多种驱动条件下保持高效，因此得到了广泛的市场认可。 DMG3420U-7详细参数 DMG3420U-7的主要参数包括其最大漏极源极电压（Vds）、最大漏极电流（Id）、导通电阻（Rds(on)）、以及开关特性等。具体参数如下： 1. 最大漏极源极电压 (Vds): 30V 2. 最大漏极电流 (Id): 60A（在适当的散热条件下） 3. 导通电阻 (Rds(on)): 0.027Ω（在10V栅源电压下） 4. 栅源电压高低极限 (Vgs): ±20V 5. PWM频率: 适用于高频开关应用 6. 封装类型: SOT-23-3 这些参数表明DMG34...

产品型号DMG3420U-7的Datasheet PDF文件预览

DMG3420U

N-CHANNEL ENHANCEMENT MODE MOSFET

Features

Mechanical Data

•

Low On-Resistance

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

Lead Free By Design/RoHS Compliant (Note 1)

"Green" Device (Note 2)

Qualified to AEC-Q101 Standards for High Reliability

•

Case: SOT-23

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

Terminals Connections: See Diagram Below

Marking Information: See Page 4

Ordering Information: See Page 4

Weight: 0.008 grams (approximate)

•

Drain

Gate

Source

Internal Schematic

TOP VIEW

Maximum Ratings @T_A= 25°C unless otherwise specified

Characteristic

Drain-Source Voltage

Symbol

V_DSS

Value

Units

Gate-Source Voltage

±12

V_GSS

_A= 25°C

Steady

State

5.47

3.43

Continuous Drain Current (Note 3)

Pulsed Drain Current (Note 4)

I_D

T_A= 85°C

I_DM

Thermal Characteristics

Characteristic

Symbol

P_D

Value

0.74

Unit

Power Dissipation (Note 3)

167

°C/W

°C

Thermal Resistance, Junction to Ambient @T_A= 25°C (Note 3)

Operating and Storage Temperature Range

R_θJA

-55 to +150

T_J,T_STG

Notes:

1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB, with minimum recommended pad layout.

4. Repetitive rating, pulse width limited by junction temperature.

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www.diodes.com

January 2010

DMG3420U

Document number: DS31867 Rev. 2 - 2

DMG3420U

Electrical Characteristics @T_A= 25°C unless otherwise specified

Characteristic

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current TJ = 25°C

Gate-Source Leakage

Symbol

Min

Typ

Max

Unit

Test Condition

BV_DSS

I_DSS

V_GS= 0V, I_D= 250μA

V_DS= 20V, V_GS= 0V

V_GS= ±12V, V_DS= 0V

1.0

μA

±100

I_GSS

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

0.5

0.95

1.2

V_GS(th)

V_DS= V_GS, I_D= 250μA

_GS= 10V, I_D= 6A

_GS= 4.5V, I_D= 5A

_GS= 2.5V, I_D= 4A

_GS= 1.8V, I_D= 2A

mΩ

Static Drain-Source On-Resistance

R_{DS (ON)}

Forward Transfer Admittance

Diode Forward Voltage

DYNAMIC CHARACTERISTICS (Note 6)

Input Capacitance

|Y_fs|

V_SD

V_DS= 5V, I_D= 3.8A

V_GS= 0V, I_S= 1A

0.75

1.0

434.7

69.1

61.2

1.53

5.4

C_iss

C_oss

C_rss

R_g

V_DS= 10V, V_GS= 0V,

f = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

V_DS= 0V, V_GS= 0V, f = 1MHz

Total Gate Charge

Q_g

_GS= 4.5V, V_DS= 10V,

Gate-Source Charge

Gate-Drain Charge

0.9

Q_gs

Q_gd

t_D(on)

t_r

I_D= 6A

1.5

Turn-On Delay Time

6.5

Turn-On Rise Time

8.3

_DD= 10V, V_GS= 5V,

Turn-Off Delay Time

21.6

5.3

R_L= 1.7Ω, R_G= 6Ω

t_D(off)

t_f

Turn-Off Fall Time

Notes:

5. Short duration pulse test used to minimize self-heating effect.

6. Guaranteed by design. Not subject to production testing.

= 5V

= 10V

= 4.5V

= 3.5V

= 3.0V

= 2.5V

= 2.0V

= 1.8V

= 1.5V

= 150°C

= 125°C

= 85°C

= 25°C

= -55°C

0.5

1.5

2.5

3.5

4.5

V_GS, GATE SOURCE VOLTAGE (V)

V_DS, DRAIN-SOURCE VOLTAGE (V)

Fig. 1 Typical Output Characteristics

Fig. 2 Typical Transfer Characteristics

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www.diodes.com

January 2010

DMG3420U

Document number: DS31867 Rev. 2 - 2

DMG3420U

0.08

0.06

0.08

0.06

= 4.5V

= 150°C

0.04

0.02

= 2.5V

= 4.5V

= 125°C

= 85°C

= 25°C

0.02

= -55°C

I_D, DRAIN-SOURCE CURRENT (A)

I_D, DRAIN CURRENT (A)

Fig. 4 Typical Drain-Source On-Resistance

vs. Drain Current and Temperature

Fig. 3 Typical On-Resistance

vs. Drain Current and Gate Voltage

1.7

1.5

1.3

0.06

0.05

0.04

0.03

= 2.5V

= 5A

1.1

= 4.5V

= 10A

= 4.5V

0.02

0.01

0.9

0.7

0.5

= 10A

= 2.5V

= 5A

-50 -25

75 100 125 150

-50 -25

75 100 125 150

T_J, JUNCTION TEMPERATURE (°C)

Fig. 6 On-Resistance Variation with Temperature

Fig. 5 On-Resistance Variation with Temperature

1.6

1.4

1.2

= 25°C

= 1mA

1.0

0.8

0.6

0.4

= 250µA

0.2

0.4

0.6

0.8

1.0

1.2

1.4

-50 -25

75 100 125 150

V_SD, SOURCE-DRAIN VOLTAGE (V)

T_A, AMBIENT TEMPERATURE (°C)

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

Fig. 8 Diode Forward Voltage vs. Current

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www.diodes.com

January 2010

DMG3420U

Document number: DS31867 Rev. 2 - 2

DMG3420U

1,000

100

10,000

1,000

100

f = 1MHz

= 150°C

iss

= 125°C

oss

rss

= 85°C

= 25°C

V_DS, DRAIN-SOURCE VOLTAGE (V)

Fig. 10 Typical Drain-Source Leakage Current

vs. Drain-Source Voltage

Fig. 9 Typical Capacitance

D = 0.7

D = 0.5

D = 0.3

0.1

D = 0.1

D = 0.9

D = 0.05

D = 0.02

(t) = r(t) * R

θJA

= 162°C/W

0.01

D = 0.01

P(pk)

D = 0.005

- T = P * R (t)

θJA

Duty Cycle, D = t /t

D = Single Pulse

0.001

0.00001

0.0001

0.001

0.01

0.1

100

1,000

t₁, PULSE DURATION TIME (s)

Fig. 11 Transient Thermal Response

Ordering Information (Note 7)

Part Number

Case

Packaging

DMG3420U-7

SOT-23

3000/Tape & Reel

Notes:

7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

G31 = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: W = 2009)

G31

M = Month (ex: 9 = September)

Date Code Key

Year

2009

2010

2011

2012

2013

2014

2015

Code

Month

Code

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

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www.diodes.com

January 2010

DMG3420U

Document number: DS31867 Rev. 2 - 2

DMG3420U

Package Outline Dimensions

SOT-23

Dim

Min

Max

0.51

1.40

2.50

1.03 0.915

0.60 0.535

Typ

0.40

1.30

2.40

0.37

1.20

2.30

0.89

0.45

1.78

2.80

0.013 0.10

0.903 1.10

2.05

3.00

1.83

2.90

0.05

1.00

0.400

0.55

0.11

0.45

0.085 0.18

0° 8°

0.61

All Dimensions in mm

Suggested Pad Layout

Dimensions Value (in mm)

2.9

0.8

0.9

2.0

1.35

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www.diodes.com

January 2010

DMG3420U

Document number: DS31867 Rev. 2 - 2

DMG3420U

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com

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January 2010

DMG3420U

Document number: DS31867 Rev. 2 - 2

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