DMP2004K-7原理图各脚功能电路原理芯片引脚定义引脚图及功能-中国IC网-芯三七

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产品型号DMP2004K-7的概述

芯片DMP2004K-7的概述 DMP2004K-7是一款广泛应用于电源管理和信号调节领域的功率MOSFET（金属氧化物半导体场效应晶体管）。它能够有效地处理高电流和高电压，成为许多电子设计中的关键组成部分。由于其优异的导通电阻和快速度的开关特性，DMP2004K-7在消费电子、工业设备、汽车电子及其它多种应用中得到了广泛的应用。 DMP2004K-7的主要特性包括其宽输入电压范围、高效的能量转换和出色的热性能。这些特性使其特别适合在功率放大器、开关电源、DC-DC转换器以及电机驱动电路中使用。芯片DMP2004K-7的详细参数 DMP2004K-7根据制造商的数据表提供了若干关键参数，主要包括： - 最大漏极源极电压（V_DS）: 40V - 最大漏极电流（I_D）: 52A - 导通电阻（R_DS(on)）: 通常在10mΩ范围内（取决于工作温度） - 栅极阈值电压（V_GS(t...

产品型号DMP2004K-7的Datasheet PDF文件预览

DMP2004K

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features

Mechanical Data

•

Low On-Resistance

•

Case: SOT-23

Case Material: Molded Plastic, “Green” Molding

Compound. UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

Terminal Connections: See Diagram

Marking Information: See Page 3

Ordering Information: See Page 3

Weight: 0.008 grams (approximate)

Very Low Gate Threshold Voltage V_GS(TH)<1V

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

Lead Free By Design/RoHS Compliant (Note 2)

ESD Protected Gate

•

"Green" Device (Note 3)

Qualified to AEC-Q101 standards for High Reliability

Drain

SOT-23

Gate

Protection

Diode

Source

TOP VIEW

ESD protected

Equivalent Circuit

Maximum Ratings @T_A= 25°C unless otherwise specified

Characteristic

Drain-Source Voltage

Symbol

V_DSS

V_GSS

I_D

Value

-20

Units

Gate-Source Voltage

±8

-600

-1.9

Drain Current (Note 1) V_GS= -4.5V

Pulsed Drain Current

I_DM

Thermal Characteristics @T_A= 25°C unless otherwise specified

Characteristic

Total Power Dissipation (Note 1)

Symbol

Value

550

Units

P_D

Thermal Resistance, Junction to Ambient

227

°C/W

R_θ

Operating and Storage Temperature Range

-55 to +150

°C

_,T_STG

Electrical Characteristics @T_A= 25°C unless otherwise specified

Characteristic

OFF CHARACTERISTICS (Note 4)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

Symbol

Min

Typ

Max

Unit

Test Condition

-20

⎯

BV_DSS

I_DSS

I_GSS

⎯

-1.0

V_GS= 0V, I_D= -250mA

V_DS= -20V, V_GS= 0V

V_GS= ±4.5V, V_DS= 0V

μA

±1.0

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

-0.5

-1.0

V_GS(th)

⎯

V_DS= V_GS, I_D= -250μA

_GS= -4.5V, I_D= -430mA

0.7

1.1

1.7

0.9

1.4

2.0

Static Drain-Source On-Resistance

R_{DS (ON)}

⎯

V_GS= -2.5V, I_D= -300mA

V_GS= -1.8V, I_D= -150mA

V_DS= -10V, I_D= -0.2A

V_GS= 0V, I_S= -115mA

Forward Transfer Admittance

Diode Forward Voltage (Note 4)

DYNAMIC CHARACTERISTICS

Input Capacitance

200

-0.5

|Y_fs|

V_SD

⎯

-1.2

175

C_iss

C_oss

C_rss

⎯

_DS= -16V, V_GS= 0V

Output Capacitance

f = 1.0MHz

Reverse Transfer Capacitance

Notes:

1. Device mounted on FR-4 PCB.

2. No purposefully added lead.

3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

4. Short duration pulse test used to minimize self-heating effect.

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www.diodes.com

June 2010

DMP2004K

Document number: DS30933 Rev. 4 - 2

DMP2004K

-V_DS, DRAIN-SOURCE VOLTAGE (V)

Fig. 1 Typical Output Characteristics

-V_GS, GATE-SOURCE VOLTAGE (V)

Fig. 2 Typical Transfer Characteristics

T_A, AMBIENT TEMPERATURE (°C)

-I_D, DRAIN-SOURCE CURRENT (A)

Fig. 3 Gate Threshold Voltage vs. Ambient Temperature

Fig. 4 Static Drain-Source On-Resistance vs. Drain Current

-I_D, DRAIN-SOURCE CURRENT (A)

Fig. 5 Static Drain-Source On-Resistance

vs. Drain Current

Fig. 6 Static Drain-Source On-Resistance vs.

Drain-Source Current

2 of 5

www.diodes.com

June 2010

DMP2004K

Document number: DS30933 Rev. 4 - 2

DMP2004K

-V_DS, SOURCE-DRAIN VOLTAGE (V)

Fig. 8 Reverse Drain Current vs. Source-Drain Voltage

T_A, AMBIENT TEMPERATURE (°C)

Fig. 7 Static Drain-Source On-State Resistance

vs. Ambient Temperature

150

120

-V_DS, DRAIN-SOURCE VOLTAGE (V)

Fig. 10 Typical Capacitance

-I_D, DRAIN CURRENT (A)

Fig. 9 Forward Transfer Admittance vs. Drain Current

Ordering Information (Note 5)

Part Number

Case

Packaging

DMP2004K-7

SOT-23

3000/Tape & Reel

Notes:

5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

PAB = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: U = 2007)

PAB

M = Month (ex: 9 = September)

Date Code Key

Year

2007

2008

2009

2010

2011

2012

Code

Month

Code

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

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www.diodes.com

June 2010

DMP2004K

Document number: DS30933 Rev. 4 - 2

DMP2004K

Package Outline Dimensions

SOT-23

Dim

Min

Max

0.51

1.40

2.50

1.03 0.915

0.60 0.535

Typ

0.40

1.30

2.40

0.37

1.20

2.30

0.89

0.45

1.78

2.80

0.013 0.10

0.903 1.10

2.05

3.00

1.83

2.90

0.05

1.00

0.400

0.55

0.11

0.45

0.085 0.18

0° 8°

0.61

All Dimensions in mm

Suggested Pad Layout

Dimensions Value (in mm)

2.9

0.8

0.9

2.0

1.35

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www.diodes.com

June 2010

DMP2004K

Document number: DS30933 Rev. 4 - 2

DMP2004K

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com

5 of 5

www.diodes.com

June 2010

DMP2004K

Document number: DS30933 Rev. 4 - 2

DMP2004K-7相关文章

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DMP2004K-7产品参数

型号:	DMP2004K-7
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Active
包装说明：	SMALL OUTLINE, R-PDSO-G3
针数：	3
Reach Compliance Code：	compliant
ECCN代码：	EAR99
Factory Lead Time：	16 weeks
风险等级：	0.8
其他特性：	ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	20 V
最大漏极电流 (Abs) (ID)：	0.6 A
最大漏极电流 (ID)：	0.6 A
最大漏源导通电阻：	0.9 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：	20 pF
JESD-30 代码：	R-PDSO-G3
JESD-609代码：	e3
湿度敏感等级：	1
元件数量：	1
端子数量：	3
工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性/信道类型：	P-CHANNEL
最大功率耗散 (Abs)：	0.55 W
认证状态：	Not Qualified
子类别：	Other Transistors
表面贴装：	YES
端子面层：	Matte Tin (Sn)
端子形式：	GULL WING
端子位置：	DUAL
处于峰值回流温度下的最长时间：	40
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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