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产品型号DMTH6005LK3-13的Datasheet PDF文件预览

Green  
DMTH6005LK3  
60V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET  
Product Summary  
Features  
Rated to +175°C  
Environments  
Ideal for High Ambient Temperature  
ID  
BVDSS  
RDS(ON) max  
5.6mΩ @ VGS = 10V  
TC = +25°C  
100% Unclamped Inductive Switching ensures more reliable  
and robust end application  
60V  
90A  
Low RDS(ON) minimizes power losses  
Low Qg minimizes switching losses  
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  
Halogen and Antimony Free. “Green” Device (Note 3)  
Qualified to AEC-Q101 Standards for High Reliability  
Description and Applications  
This MOSFET has been designed to minimize the on-state resistance  
(RDS(ON)) and yet maintain superior switching performance, making it  
ideal for high efficiency power management applications.  
Mechanical Data  
Case: TO252  
Case Material: Molded Plastic, “Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminal Connections: See Diagram  
Engine Management Systems  
Body Control Electronics  
DCDC Converters  
Terminals: Finish Matte Tin Annealed over Copper Leadframe.  
e3  
Solderable per MIL-STD-202, Method 208  
Weight: 0.33 grams (Approximate)  
D
D
D
TO252  
G
G
S
S
Top View  
Top View  
Pin Out  
Internal Schematic  
Ordering Information (Note 4)  
Part Number  
DMTH6005LK3-13  
Case  
TO252  
Packaging  
2,500/Tape & Reel  
Notes:  
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.  
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"  
and Lead-free.  
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  
<1000ppm antimony compounds.  
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.  
Marking Information  
= Manufacturers Marking  
H6005L = Product Type Marking Code  
YYWW = Date Code Marking  
YY = Last Digit of Year (ex: 15 = 2015)  
WW = Week Code (01 to 53)  
H6005L  
YYWW  
1 of 7  
www.diodes.com  
November 2015  
© Diodes Incorporated  
DMTH6005LK3  
Document number: DS38211 Rev. 2 - 2  
DMTH6005LK3  
Maximum Ratings (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Drain-Source Voltage  
Symbol  
VDSS  
Value  
60  
Units  
V
V
Gate-Source Voltage  
±20  
VGSS  
TC = +25°C  
(Note 9)  
90  
Continuous Drain Current (Note 6)  
A
ID  
TC = +100°C  
70  
90  
Maximum Body Diode Forward Current (Note 6)  
Pulsed Drain Current (10µs pulse, duty cycle = 1%)  
Avalanche Current, L=1mH  
A
A
TC = +25C  
IS  
150  
14.8  
98  
IDM  
IAS  
A
Avalanche Energy, L=1mH  
mJ  
EAS  
Thermal Characteristics  
Characteristic  
Total Power Dissipation (Note 5)  
Symbol  
Value  
2.1  
Units  
W
TA = +25°C  
TC = +25°C  
PD  
Thermal Resistance, Junction to Ambient (Note 5)  
Total Power Dissipation (Note 6)  
38  
°C/W  
W
R  
JA  
100  
PD  
Thermal Resistance, Junction to Case (Note 6)  
Operating and Storage Temperature Range  
1.5  
°C/W  
°C  
R  
JC  
-55 to +175  
TJ, TSTG  
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)  
Characteristic  
OFF CHARACTERISTICS (Note 7 )  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate-Source Leakage  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
60  
V
BVDSS  
IDSS  
1
VGS = 0V, ID = 1mA  
VDS = 48V, VGS = 0V  
VGS = ±20V, VDS = 0V  
µA  
nA  
±100  
IGSS  
ON CHARACTERISTICS (Note 7)  
Gate Threshold Voltage  
1
3
V
mΩ  
V
VGS(TH)  
RDS(ON)  
VSD  
VDS = VGS, ID = 250µA  
VGS = 10V, ID = 50A  
VGS = 6V, ID = 20A  
VGS = 4.5V, ID = 12.5A  
VGS = 0V, IS = 20A  
4.5  
5.6  
7.9  
5.6  
7.2  
10  
  
Static Drain-Source On-Resistance  
Diode Forward Voltage  
1.2  
DYNAMIC CHARACTERISTICS (Note 8)  
Input Capacitance  
2962  
965.2  
  
  
  
  
  
  
  
  
Ciss  
Coss  
Crss  
RG  
VDS = 30V, VGS = 0V,  
f = 1MHz  
Output Capacitance  
pF  
Reverse Transfer Capacitance  
Gate Resistance  
59.8  
0.66  
VDS = 0V, VGS = 0V, f = 1MHz  
47.1  
23.1  
10.2  
12.5  
8.3  
Total Gate Charge (VGS = 10V)  
Total Gate Charge (VGS = 4.5V)  
Gate-Source Charge  
Qg  
Qg  
nC  
VDD = 30V, ID = 50A  
Qgs  
Qgd  
tD(ON)  
tR  
Gate-Drain Charge  
Turn-On Delay Time  
Turn-On Rise Time  
9.4  
22  
VDD = 30V, VGS = 10V,  
ID = 30A, RG = 3.3Ω  
ns  
Turn-Off Delay Time  
tD(OFF)  
tF  
Turn-Off Fall Time  
8.9  
Body Diode Reverse Recovery Time  
Body Diode Reverse Recovery Charge  
40.4  
49.7  
ns  
tRR  
IF = 30A, di/dt = 100A/μs  
nC  
QRR  
Notes:  
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout.  
6. Thermal resistance from junction to soldering point (on the exposed drain pad).  
7. Short duration pulse test used to minimize self-heating effect.  
8. Guaranteed by design. Not subject to production testing.  
9. Package limited.  
2 of 7  
www.diodes.com  
November 2015  
© Diodes Incorporated  
DMTH6005LK3  
Document number: DS38211 Rev. 2 - 2  
DMTH6005LK3  
50.0  
40.0  
30.0  
20.0  
10.0  
0.0  
30  
25  
20  
15  
10  
5
VGS = 10.0V  
VGS = 6.0V  
VDS = 5V  
VGS = 4.0V  
VGS = 5.0V  
VGS = 4.5V  
125  
85℃  
VGS = 3.5V  
VGS = 3.0V  
25℃  
150℃  
175℃  
-55℃  
0
1
2
3
4
5
6
0
0.5  
1
1.5  
VDS, DRAIN-SOURCE VOLTAGE (V)  
Figure 1. Typical Output Characteristic  
2
2.5  
3
3.5  
4
4.5  
5
VGS, GATE-SOURCE VOLTAGE (V)  
Figure 2. Typical Transfer Characteristic  
0.06  
0.05  
0.04  
0.03  
0.02  
0.01  
0
0.01  
0.009  
0.008  
0.007  
0.006  
0.005  
0.004  
0.003  
0.002  
0.001  
VGS = 4.5V  
VGS = 6.0V  
VGS = 10V  
ID = 50A  
ID = 20A  
ID = 12.5A  
0
4
8
12  
16  
20  
0
5
10 15 20 25 30 35 40 45 50  
ID, DRAIN-SOURCE CURRENT (A)  
VGS, GATE-SOURCE VOLTAGE (V)  
Figure 3. Typical On-Resistance vs. Drain Current and  
Gate Voltage  
Figure 4. Typical Transfer Characteristic  
2
1.8  
1.6  
1.4  
1.2  
1
0.01  
0.009  
0.008  
0.007  
0.006  
0.005  
0.004  
0.003  
0.002  
0.001  
0
VGS = 10V  
175oC  
150oC  
125oC  
85oC  
25oC  
VGS = 10V, ID = 50A  
VGS = 4.5V, ID = 12.5A  
-55oC  
0.8  
0.6  
-50 -25  
0
25  
50  
75 100 125 150 175  
10  
20  
30  
40  
50  
60  
70  
80  
90 100  
ID, DRAIN CURRENT (A)  
TJ, JUNCTION TEMPERATURE ()  
Figure 5. Typical On-Resistance vs. Drain Current and  
Junction Temperature  
Figure 6. On-Resistance Variation with Junction  
Temperature  
3 of 7  
www.diodes.com  
November 2015  
© Diodes Incorporated  
DMTH6005LK3  
Document number: DS38211 Rev. 2 - 2  
DMTH6005LK3  
0.014  
0.012  
0.01  
4
3.5  
3
VGS = 4.5V, ID = 12.5A  
ID = 1mA  
2.5  
2
0.008  
0.006  
0.004  
0.002  
0
ID = 250μA  
1.5  
1
VGS = 10V, ID = 50A  
0.5  
0
-50 -25  
0
25  
50  
75 100 125 150 175  
-50 -25  
0
25  
50  
75 100 125 150 175  
TJ, JUNCTION TEMPERATURE ()  
Figure 7. On-Resistance Variation with Junction  
Temperature  
TJ, JUNCTION TEMPERATURE ()  
Figure 8. Gate Threshold Variation vs. Junction  
Temperature  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
10000  
1000  
100  
VGS = 0V  
f=1MHz  
Ciss  
Coss  
TJ = 85oC  
TJ = 125oC  
Crss  
TJ = 150oC  
TJ = 175oC  
TJ = 25oC  
TJ = -55oC  
10  
1000  
100  
10  
0
5
10  
VDS, DRAIN-SOURCE VOLTAGE (V)  
Figure 10. Typical Junction Capacitance  
15  
20  
25  
30  
35  
40  
0
0.3  
0.6  
0.9  
1.2  
1.5  
VSD, SOURCE-DRAIN VOLTAGE (V)  
Figure 9. Diode Forward Voltage vs. Current  
10  
9
8
7
6
5
4
3
2
1
0
RDS(ON) Limited  
PW =1µs  
PW =10µs  
PW =100µs  
PW =1ms  
PW =10ms  
VDS = 30V, ID = 50A  
TJ(Max) = 175℃  
TC = 25℃  
Single Pulse  
DUT on Infinite  
Heatsink  
PW =100ms  
PW =1s  
VGS=10V  
1
0
5
10 15 20 25 30 35 40 45 50  
Qg (nC)  
0.1  
1
10  
100  
VDS, DRAIN-SOURCE VOLTAGE (V)  
Figure 12. SOA, Safe Operation Area  
Figure 11. Gate Charge  
4 of 7  
www.diodes.com  
November 2015  
© Diodes Incorporated  
DMTH6005LK3  
Document number: DS38211 Rev. 2 - 2  
DMTH6005LK3  
1
D=0.7  
D=0.5  
D=0.9  
D=0.3  
0.1  
D=0.1  
D=0.05  
D=0.02  
D=0.01  
0.01  
0.001  
RθJC(t) = r(t) * RθJC  
RθJC = 1.5/W  
Duty Cycle, D = t1 / t2  
D=0.005  
D=Single Pulse  
1E-06  
1E-05  
0.0001  
0.001  
0.01  
0.1  
1
10  
t1, PULSE DURATION TIME (sec)  
Figure 13. Transient Thermal Resistance  
5 of 7  
www.diodes.com  
November 2015  
© Diodes Incorporated  
DMTH6005LK3  
Document number: DS38211 Rev. 2 - 2  
DMTH6005LK3  
Package Outline Dimensions  
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.  
TO252 (DPAK)  
E
A
b3  
7°± 1°  
c
L3  
TO252 (DPAK)  
Dim Min Max Typ  
2.19 2.39 2.29  
A1 0.00 0.13 0.08  
A2 0.97 1.17 1.07  
A
D
A2  
H
L4  
b
0.64 0.88 0.783  
b2 0.76 1.14 0.95  
b3 5.21 5.46 5.33  
c
D
0.45 0.58 0.531  
6.00 6.20 6.10  
e
D1 5.21  
-
-
-
b( 3x)  
e
-
2.286  
b2( 2x)  
E
6.45 6.70 6.58  
0.508  
E1 4.32  
-
-
Gauge Plane  
H
L
9.40 10.41 9.91  
1.40 1.78 1.59  
D1  
Seating Plane  
E1  
L3 0.88 1.27 1.08  
L4 0.64 1.02 0.83  
a
L
A1  
0°  
10°  
-
2.74REF  
All Dimensions in mm  
Suggested Pad Layout  
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.  
TO252 (DPAK)  
X1  
Dimensions Value (in mm)  
Y1  
C
X
4.572  
1.060  
5.632  
2.600  
5.700  
10.700  
X1  
Y
Y2  
Y1  
Y2  
C
Y
X
6 of 7  
www.diodes.com  
November 2015  
© Diodes Incorporated  
DMTH6005LK3  
Document number: DS38211 Rev. 2 - 2  
DMTH6005LK3  
IMPORTANT NOTICE  
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,  
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE  
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the  
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or  
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume  
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated  
website, harmless against all damages.  
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.  
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and  
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or  
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.  
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings  
noted herein may also be covered by one or more United States, international or foreign trademarks.  
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the  
final and determinative format released by Diodes Incorporated.  
LIFE SUPPORT  
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express  
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:  
A. Life support devices or systems are devices or systems which:  
1. are intended to implant into the body, or  
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the  
labeling can be reasonably expected to result in significant injury to the user.  
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the  
failure of the life support device or to affect its safety or effectiveness.  
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and  
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any  
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related  
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its  
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.  
Copyright © 2015, Diodes Incorporated  
www.diodes.com  
7 of 7  
www.diodes.com  
November 2015  
© Diodes Incorporated  
DMTH6005LK3  
Document number: DS38211 Rev. 2 - 2  
配单直通车
DMTH6005LK3-13产品参数
型号:DMTH6005LK3-13
是否无铅: 不含铅
是否Rohs认证: 符合
生命周期:Active
包装说明:,
Reach Compliance Code:not_compliant
ECCN代码:EAR99
Factory Lead Time:23 weeks
风险等级:1.73
JESD-609代码:e3
峰值回流温度(摄氏度):NOT SPECIFIED
端子面层:Matte Tin (Sn)
处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1
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