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产品型号DMV1500MFD5的概述

芯片DMV1500MFD5的概述 DMV1500MFD5是一款高性能的双极性功率放大器，主要用于各种电子设备中的信号放大，其设计强调低噪声，广泛应用于通信、音频及其他需要高信号完整性的场合。该芯片通过提供高增益和宽带宽，使得其在高频应用中表现良好。该芯片的独特设计使其能够在不同的工作条件下提供稳定的性能，且具有良好的热稳定性。DMV1500MFD5的主要功能是增强输入信号的幅度，同时保留信号的质量与节能效率，广泛应用于无线通信系统、音频设备、传感器以及其他数字应用。芯片DMV1500MFD5的详细参数 DMV1500MFD5的详细参数如下： - 工作电压 (VCC)： 3V至15V - 工作频率 (f)： DC至500kHz - 增益 (Av)： 28 dB - 最大输出功率 (Pout)： 1W @ 8Ω - 最大输入电压 (Vin)： 1Vpp - 总谐波失真 (THD)： <...

产品型号DMV1500MFD5的Datasheet PDF文件预览

DMV1500M

DAMPER + MODULATION DIODE FOR VIDEO

Table 1: Main Product Characteristics

DAMPER

MODULATION

DAMPER

6 A

MODUL.

3 A

F(AV)

1500 V

135 ns

1.65V

600 V

50 ns

1.4 V

RRM

t (max)

V (max)

FEATURES AND BENEFITS

■

Full kit in one package

High breakdown voltage capability

Very fast recovery diode

Specified turn on switching characteristics

Low static and peak forward voltage drop for

low dissipation

TO-220FPAB

DMV1500MFD

■

Insulated version:

Insulated voltage = 2000 V

Capacitance = 7 pF

RMS

■

Planar technology allowing high quality and

best electrical characteristics

Outstanding performance of well proven DTV

as damper and new faster Turbo 2 600V

technology as modulation

TO-220FPAB F5 Bending

DMV1500MFD5

(optional)

DESCRIPTION

High voltage semiconductor especially designed

for horizontal deflection stage in standard and high

resolution video display with E/W correction.

The insulated TO-220FPAB package includes

both the DAMPER diode and the MODULATION

diode, thanks to a dedicated design.

Assembled on automated line, it offers very low

dispersion values on insulating and thermal

performances.

Table 2: Order Codes

Part Number

DMV1500MFD

DMV1500MFD5

Marking

DMV1500M

September 2004

REV. 1

1/8

DMV1500M

Table 3: Absolute Maximum Ratings

Value

Damper

Symbol

Parameter

Unit

Modul.

600

Repetitive peak reverse voltage

1500

RRM

Surge non repetitive forward current tp = 10ms sinusoidal

Storage temperature range

FSM

-40 to +150

150

°C

stg

Maximum operating junction temperature

Table 4: Thermal Resistance

Symbol

Parameter

Value

3.7

Unit

Junction to case thermal resistance

°C/W

th(j-c)

Table 5: Static Electrical Characteristics

Value

T = 125°C

T = 25°C

Symbol

Parameter

Test conditions

Unit

Typ. Max. Typ. Max.

V = 1500 V

Damper

100

1000

I *

Reverse leakage current

Forward voltage drop

µA

V = 600 V

Modulation

Damper

I = 6 A

1.4

2.2

1.8

1.2

1.1

1.65

1.4

V **

I = 3 A

Modulation

Pulse test:

* tp = 5 ms, δ < 2%

^{** tp = 380 µs,}δ < 2%

To evaluate the maximum conduction losses of the DAMPER and MODULATION diodes use the following equations :

DAMPER: P = 1.37 x I

F(AV)

+ 0.047 x I

F (RMS)

MODULATION: P = 1.12 x I

+ 0.092 x I

F(AV)

F (RMS)

Table 6: Recovery Characteristics

Value

Symbol

Parameter

Test conditions

Damper

Modul.

Unit

Typ.

Max.

Typ.

Max.

I = 100mA

I =100mA

T = 25°C

750

110

350

= 10mA

Reverse recovery time

I = 1A

dI /dt = -50 A/µs T = 25°C

135

V =30V

2/8

DMV1500M

Unit

Table 7: Turn-On Switching Characteristics

Value

Symbol

Parameter

Test conditions

Typ. Max.

I = 6 A

dI /dt = 80 A/µs T = 100°C

Forward recovery time Damper

570

= 3 V

I = 3 A

dI /dt = 80 A/µs T = 100°C

Modul.

240

= 2 V

I = 6 A

T = 100°C

Peak forward voltage

Damper

Modul.

dI /dt = 80 A/µs

I = 3 A

T = 100°C

dI /dt = 80 A/µs

Figure 1: Power dissipation versus peak

forward current (triangular waveform, δ=0.45)

Figure 2: Average forward current versus

ambient temperature

P (W)

F(AV)

(A)

F(AV)

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

R_th(j-a)=R_th(j-c)

DAMPER diode

R_th(j-a)=R_th(j-c)

MODULATION diode

=tp/T

T (°C)

amb

I (A)

100

125

150

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

Figure 3: Forward voltage drop versus forward

current (damper diode)

Figure 4: Forward voltage drop versus forward

current (modulation diode)

I (A)

T_j=125°C

(maximum values)

T_j=125°C

(maximum values)

T_j=125°C

(typical values)

T_j=125°C

(typical values)

T_j=25°C

(maximum values)

T_j=25°C

(maximum values)

(V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0

3/8

DMV1500M

Figure 5: Relative variation of thermal

impedance junction to case versus pulse

duration

Figure 6: Non repetitive peak forward current

versus overload duration (damper diode)

(A)

th(j-c) th(j-c)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

DAMPER diode

MODULATION diode

T_C=25°C

T_C=75°C

T_C=125°C

t(s)

δ=0.5

t (s)

Single pulse

1.E-03

1.E-02

1.E-01

1.E+00

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

Figure 7: Non repetitive peak forward current

versus overload duration (modulation diode)

Figure 8: Reverse recovery charges versus

dI /dt (damper diode)

(A)

Q (nC)

1000

I_F=I_P

T_j=125°C

900

90% confidence

800

700

600

500

400

300

200

100

T_C=25°C

T_C=75°C

T_C=125°C

t(s)

=0.5

dI /dt(A/µs)

0.1

1.0

10.0

1.E-03

1.E-02

1.E-01

1.E+00

Figure 9: Reverse recovery charges versus

Figure 10: Peak reverse recovery current

versus dI /dt (damper diode)

dI /dt (modulation diode)

Q (nC)

(A)

200

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

I_F=I_P

T_j=125°C

90% confidence

T_j=125°C

90% confidence

150

100

dI /dt(A/µs)

0.1

1.0

10.0

0.1

1.0

10.0

100.0

4/8

DMV1500M

Figure 11: Peak reverse recovery current

versus dI /dt (modulation diode)

Figure 12: Transient peak forward voltage

versus dI /dt (damper diode)

(A)

(V)

6.0

5.0

4.0

3.0

2.0

1.0

0.0

I_F=I_P

T_j=125°C

90% confidence

I_F=I_P

T_j=125°C

90% confidence

dI /dt(A/µs)

100

120

140

100

1000

Figure 13: Transient peak forward voltage

versus dI /dt (modulation diode)

Figure 14: Forward recovery time versus dI /dt

(damper diode)

t (ns)

(V)

800

I_F=I_P

T_j=125°C

V_FR=3V

90% confidence

I_F=I_P

T_j=125°C

90% confidence

750

700

650

600

550

500

450

400

dI /dt(A/µs)

100

120

140

160

180

200

100

120

140

Figure 15: Forward recovery time versus dI /dt

(modulation diode)

Figure 16: Relative variation of dynamic

parameters versus junction temperature

, V , Q

[T ]/ I , V , Q

[T =125°C]

RR j

t (ns)

RM FP

1.2

1.0

0.8

0.6

0.4

0.2

0.0

200

175

I_F=I_P

T_j=125°C

V_FR=2V

90% confidence

150

125

100

V_FP

I_RM

Q_RR

T (°C)

dI /dt(A/µs)

100

120

140

160

180

200

100

125

5/8

DMV1500M

Figure 17: Junction capacitance versus

reverse voltage applied (typical values)

C(pF)

100

F=1MHz

V_OSC=30mV_RMS

T_j=25°C

DAMPER diode or MODULATION diode

V (V)

100

1000

Figure 18: TO-220FPAB Package Mechanical Data

REF.

DIMENSIONS

Millimeters Inches

Min.

Max.

4.9

2.9

2.75

0.7

Max.

0.192

0.114

0.108

0.027

0.039

0.067

0.205

0.106

0.421

4.4

2.5

0.173

0.098

0.096

0.016

0.024

0.045

0.195

0.094

0.393

2.45

0.4

0.6

1.15

4.95

2.4

1.7

5.2

2.7

10.7

Dia.

16 Typ.

0.630 Typ.

28.6

9.8

15.8

30.6

10.7

16.4

9.9

1.126

0.385

0.622

0.354

0.114

1.205

0.421

0.646

0.390

0.138

2.9

3.5

6/8

DMV1500M

Inches

Figure 19: TO-220FPAB F5 Bending (option) Package Mechanical Data

REF.

DIMENSIONS

Millimeters

Min.

4.4

2.5

2.45

0.4

0.6

1.15

4.95

2.4

Max.

4.9

2.9

2.75

0.7

1.7

5.2

2.7

10.7

Min.

Max.

0.192

0.114

0.108

0.027

0.039

0.067

0.205

0.106

0.421

0.173

0.098

0.096

0.016

0.024

0.045

0.195

0.094

0.393

16 Typ.

0.630 Typ.

24.16

1.65

15.8

26.9

2.41

16.4

9.9

0.951

0.065

0.622

0.354

0.115

1.059

0.095

0.646

0.390

0.130

2.92

3.3

1.4 Typ.

0.055 Typ.

Dia.

2.9

3.5

0.114

0.138

Table 8: Ordering Information

Delivery

mode

Tube

Part Number

Marking

Package

Weight

Base qty

DMV1500MFD

DMV1500MFD5

DMV1500M

TO-220FPAB

TO-220FPAB F5

2.4 g

Tube

Table 9: Revision History

Date

Revision

Description of Changes

07-Sep-2004

First issue

7/8

DMV1500M

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences

of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted

by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject

to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not

authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

The ST logo is a registered trademark of STMicroelectronics.

All other names are the property of their respective owners

STMicroelectronics group of companies

Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -

Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America

www.st.com

8/8

DMV1500MFD5相关文章

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DMV1500MFD5产品参数

型号:	DMV1500MFD5
是否Rohs认证：	符合
生命周期：	Obsolete
IHS 制造商：	STMICROELECTRONICS
零件包装代码：	TO-220AB
包装说明：	R-PSFM-T3
针数：	3
Reach Compliance Code：	not_compliant
ECCN代码：	EAR99
HTS代码：	8541.10.00.80
风险等级：	5.79
应用：	HIGH VOLTAGE VERY FAST RECOVERY
外壳连接：	ISOLATED
配置：	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	1.1 V
JEDEC-95代码：	TO-220AB
JESD-30 代码：	R-PSFM-T3
JESD-609代码：	e3
最大非重复峰值正向电流：	75 A
元件数量：	2
相数：	1
端子数量：	3
最高工作温度：	150 °C
最大输出电流：	6 A
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED
认证状态：	Not Qualified
最大重复峰值反向电压：	1500 V
最大反向恢复时间：	0.135 µs
子类别：	Rectifier Diodes
表面贴装：	NO
端子面层：	Matte Tin (Sn)
端子形式：	THROUGH-HOLE
端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED

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