DS1210S现货热卖使用介绍供应商报价哪里找芯片批发报价-中国IC网-芯三七

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产品型号DS1210S的概述

芯片DS1210S的概述 DS1210S是一款由德州仪器（Texas Instruments）所生产的集成电路，主要用于微处理器系统的监控和故障保护。作为一种增强型时钟发生器，该芯片为系统提供了必要的时钟信号，并且具备一定的电源管理功能，以确保系统在各种工作状态下的稳定性。DS1210S普遍用于各种电子产品中，特别是在需要实时监测功能的嵌入式系统及计算机硬件中。本芯片能够有效地支持低功耗操作，适用于便携式设备与低功耗应用，对于现代电子产品的设计发展起到了重要作用。DS1210S的核心功能主要包括时钟信号生成、系统复位管理和电源故障监测等，极大地提高了系统的可靠性和安全性。芯片DS1210S的详细参数 DS1210S的主要技术参数包括但不限于以下几点： 1. 工作电压范围：2.0V至5.5V 2. 最大时钟频率：32 kHz至1 MHz，符合微控制器的常规需求 3. 温度范围：-40...

产品型号DS1210S的Datasheet PDF文件预览

19-6294; Rev 6/12

DS1210

Nonvolatile Controller Chip

FEATURES

. Converts CMOS RAMs into Nonvolatile

Memories

PIN ASSIGNMENT

VCCO

VCCI

VBAT2

CEO

VBAT1

TOL

. Unconditionally Write Protects when V_CCis

Out-of-Tolerance

. Automatically Switches to Battery when

Power-Fail Occurs

GND

DS1210 8-pin PDIP (300 mils)

. Space-Saving 8-Pin PDIP or 16-Pin SO

Packages

VCCO

. Consumes <100nA of Battery Current

. Tests Battery Condition on Power up

. Provides for Redundant Batteries

. Optional 5% or 10% Power-Fail Detection

. Low Forward Voltage Drop on the V_CC

Switch

VCCI

VBAT1

VBAT2

TOL

CEO

GND

. Optional Industrial (N) Temperature Range of

-40°C to +85°C

DS1210S 16-pin SO (300 mils)

PIN DESCRIPTION

V_CCO

V_BAT1

TOL

- RAM Supply

- + Battery 1

- Power Supply Tolerance

- Ground

GND

- Chip Enable Input

CEO

V_BAT2

V_CCI

- Chip Enable Output

- + Battery 2

- + Supply

- No Connect

DESCRIPTION

The DS1210 Nonvolatile Controller Chip is a CMOS circuit which solves the application problem of

converting CMOS RAM into nonvolatile memory. Incoming power is monitored for an out-of-tolerance

condition. When such a condition is detected, chip enable is inhibited to accomplish write protection and

the battery is switched on to supply the RAM with uninterrupted power. Special circuitry uses a low-

leakage CMOS process which affords precise voltage detection at extremely low battery consumption.

The 8-pin DIP package keeps PC board real estate requirements to a minimum. By combining the

DS1210 Nonvolatile Controller Chip with a CMOS memory and batteries, nonvolatile RAM operation

can be achieved.

1 of 8

DS1210

OPERATION

The DS1210 nonvolatile controller performs five circuit functions required to battery back up a RAM.

First, a switch is provided to direct power from the battery or the incoming supply (V_CCI) depending on

which is greater. This switch has a voltage drop of less than 0.3V.

The second function which the nonvolatile controller provides is power-fail detection. The DS1210

constantly monitors the incoming supply. When the supply goes out of tolerance, a precision comparator

detects power-fail and inhibits chip enable (CEO ).

The third function of write protection is accomplished by holding the CEO output signal to within 0.2

volts of the V_CCIor battery supply. If CE input is low at the time power-fail detection occurs, the CEO

output is kept in its present state until CE is returned high. The delay of write protection until the current

memory cycle is completed prevents the corruption of data. Power-fail detection occurs in the range of

4.75 volts to 4.5 volts with the tolerance (TOL) pin grounded. If TOL in connected to V_CCO, then power-

fail detection occurs in the range of 4.5 volts to 4.25 volts. During nominal supply conditions CEO will

follow CE with a maximum propagation delay of 20ns.

The fourth function the DS1210 performs is a battery status warning so that potential data loss is avoided.

Each time that the circuit is powered up the battery voltage is checked with a precision comparator. If the

battery voltage is less than 2.0 volts, the second memory cycle is inhibited. Battery status can, therefore,

be determined by performing a read cycle after power-up to any location in memory, verifying that

memory location content. A subsequent write cycle can then be executed to the same memory location

altering the data. If the next read cycle fails to verify the written data, then the batteries are less than 2.0V

and data is in danger of being corrupted.

The fifth function of the nonvolatile controller provides for battery redundancy. In many applications,

data integrity is paramount. In these applications it is often desirable to use two batteries to ensure

reliability. The DS1210 controller provides an internal isolation switch which allows the connection of

two batteries. During battery backup operation the battery with the highest voltage is selected for use. If

one battery should fail, the other will take over the load. The switch to a redundant battery is transparent

to circuit operation and to the user. A battery status warning will occur when the battery in use falls below

2.0 volts. A grounded V_BAT2pin will not activate a battery-fail warning. In applications where battery

redundancy is not required, a single battery should be connected to the BAT1 pin, and the BAT2 battery

pin must be grounded. The nonvolatile controller contains circuitry to turn off the battery backup. This is

to maintain the battery(s) at its highest capacity until the equipment is powered up and valid data is

written to the SRAM. While in the freshness seal mode the CEO and V_CCOwill be forced to V_OL. When

the batteries are first attached to one or both of the V_BATpins, V_CCOwill not provide battery back-up until

V_CCIexceeds V_CCTP, as set by the TOL pin, and then falls below V_BAT

Figure 1 shows a typical application incorporating the DS1210 in a microprocessor-based system. Section

A shows the connections necessary to write protect the RAM when V_CCis less than 4.75 volts and to back

up the supply with batteries. Section B shows the use of the DS1210 to halt the processor when V_CCis

less than 4.75 volts and to delay its restart on power-up to prevent spurious writes.

2 of 8

DS1210

SECTION A - BATTERY BACKUP Figure 1

BATTERY BACKUP CURRENT DRAIN EXAMPLE

CONSUMPTION

DS1210 I_BAT

RAM I_CC02

Total Drain

100 nA

10 µA

10.1 µA

SECTION B - PROCESSOR RESET

3 of 8

DS1210

ABSOLUTE MAXIMUM RATINGS

Voltage Range on Any Pin Relative to Ground

Operating Temperature Range

-0.3V to +7.0V

0°C to +70°C, -40°C to +85°C for N parts

Storage Temperature Range

Soldering Temperature (reflow, SO)

Lead Temperature (soldering, 10s)

-55°C to +125°C

+260°C

+300°C

This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the

operation sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of

time may affect reliability.

PACKAGE THERMAL CHARACTERISTICS (Note 1)

PDIP

Junction-to-Ambient Thermal Resistance (θ_JA).…………………...…………………………...….110°C/W

Junction-to-Case Thermal Resistance (θ_JC)…………………………………………………………40°C/W

Junction-to-Ambient Thermal Resistance (θ_JA).…………………………………………………….70°C/W

Junction-to-Case Thermal Resistance (θ_JC)…………………………………………………………23°C/W

Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer board for the SO.

Note 1:

For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial.

RECOMMENDED OPERATING CONDITIONS

(Note 10)

UNITS NOTES

PARAMETER

SYMBOL

V_CCI

MIN

4.75

4.5

TYP

5.0

MAX

5.5

V_CC+0.3

+0.8

4.0

TOL = GND Supply Voltage

TOL = V_CCOSupply Voltage

Logic 1 Input

2, 3

V_CCI

V_IH

2.2

Logic 0 Input

Battery Input

V_IL

V_BAT1

-0.3

2.0

V_BAT2

DC ELECTRICAL CHARACTERISTICS

(Note 10; V_CCI= 4.75 to 5.5V, TOL = GND)

(V_CCI= 4.5 to 5.5V, TOL = V_CCO

)

PARAMETER

Supply Current

Supply Voltage

Supply Current

Input Leakage

Output Leakage

SYMBOL

I_CCI

MIN

TYP

MAX

UNITS NOTES

µA

V_CCO

I_CCO1

I_IL

I_LO

I_OH

V_CC-0.2

+1.0

-1.0

CEO Output @ 2.4V

I_OL

4.0

CEO Output @ 0.4V

V_CCTrip Point (TOL=GND)

V_CCTP

V_OHL

4.50

4.25

V_BAT-0.2

4.62

4.37

4.74

4.49

V_CCTrip Point (TOL=V_CCO

)

CEO Output

V_BAT1or V_BAT2

Battery Current

Battery Backup Current

@ V_CCO= V_BAT– 0.3V

I_BAT

100

µA

3, 4

7, 8

I_CCO2

4 of 8

DS1210

CAPACITANCE

PARAMETER

Input Capacitance

Output Capacitance

(T_A= +25°C)

UNITS NOTES

SYMBOL

C_IN

MIN

TYP

MAX

C_OUT

AC ELECTRICAL CHARACTERISTICS

(Note 10; V_CCI= 4.75V to 5.5V, TOL = GND)

(V_CCI= 4.5V to 5.5V, TOL = V_CCO

)

PARAMETER

SYMBOL

MIN

TYP

MAX

UNITS NOTES

t_PD

CE Propagation Delay

CE High to Power-Fail

t_PF

AC ELECTRICAL CHARACTERISTICS

(Note 10; V_CCI= 4.75V, TOL = GND)

(V_CCI< 4.5, TOL = V_CCO

)

Recovery at Power Up

t_REC

t_F

t_FB

t_R

300

125

µs

V_CCSlew Rate Power-Down

V_CCSlew Rate Power-Up

t_CE

1.5

µs

CE Pulse Width

NOTES:

2. All voltages are referenced to ground.

3. Only one battery input is required. Unused battery inputs must be grounded.

4. Measured with V_CCOand CEO open.

5. I_CC01is the maximum average load which the DS1210 can supply to the memories.

6. Measured with a load as shown in Figure 2.

7. I_CC02is the maximum average load current which the DS1210 can supply to the memories in the battery backup mode.

8. t_CEmax must be met to ensure data integrity on power loss.

9. CEO can only sustain leakage current in the battery backup mode.

10. All AC and DC electrical characteristics are valid for the full temperature range. For commercial products, this range is 0

to +70°C. For industrial products (N), this range is -40°C to +85°C.

11. DS1210 is recognized by Underwriters Laboratories (UL) under file E99151.

5 of 8

DS1210

TIMING DIAGRAM: POWER-UP

TIMING DIAGRAM: POWER-DOWN

OUTPUT LOAD Figure 2

6 of 8

DS1210

ORDERING INFORMATION

PIN-

PACKAGE

8 PDIP

PART

TEMP RANGE

DS1210+

0°C to +70°C

DS1210N+

DS1210S+

DS1210SN+

-40°C to +85°C 8 PDIP

0°C to +70°C 16 SO

-40°C to +85°C 16 SO

+Denotes a lead(Pb)-free/RoHS-compliant package.

PACKAGE INFORMATION

For the latest package outline information and land patterns (footprints), go to www.maxim-ic.com/packages.

Note that a “+”, “#”, or “-” in the package code indicates RoHS status only. Package drawings may show a

different suffix character, but the drawing pertains to the package regardless of RoHS status.

PACKAGE TYPE

8 PDIP

PACKAGE CODE

P8+4

OUTLINE NO.

21-0043

LAND PATTERN NO.



16 SO

W16+2

21-0042

90-0107

7 of 8

DS1210

REVISION HISTORY

REVISION

PAGES

CHANGED

DESCRIPTION

DATE

Added lead temperature and soldering temperature information to

the Absolute Maximum Ratings section; changed “Pin 3” to “TOL”

in multiple places; added the Package Thermal Characteristics

section; added the Ordering Information and Package Information

sections

6/12

1, 2, 4, 5, 8

8 of 8

Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied. Maxim

reserves the right to change the circuitry and specifications without notice at any time.

Maxim Integrated Products, Inc. 160 Rio Robles, San Jose, CA 95134 USA 1-408-601-1000

Maxim is a registered trademark of Maxim Integrated Products, Inc.

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DS1210S产品参数

型号:	DS1210S
是否Rohs认证：	不符合
生命周期：	Transferred
IHS 制造商：	DALLAS SEMICONDUCTOR
包装说明：	0.300 INCH, SOIC-16
Reach Compliance Code：	unknown
风险等级：	4.69
可调阈值：	NO
模拟集成电路 - 其他类型：	POWER SUPPLY SUPPORT CIRCUIT
JESD-30 代码：	R-PDSO-G16
JESD-609代码：	e0
信道数量：	3
功能数量：	1
端子数量：	16
最高工作温度：	70 °C
最低工作温度：
封装主体材料：	PLASTIC/EPOXY
封装代码：	SOP
封装等效代码：	SOP16,.4
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
电源：	5 V
认证状态：	Not Qualified
子类别：	Power Management Circuits
最大供电电流 (Isup)：	80 mA
最大供电电压 (Vsup)：	5.5 V
最小供电电压 (Vsup)：	4.5 V
标称供电电压 (Vsup)：	5 V
表面贴装：	YES
技术：	CMOS
温度等级：	COMMERCIAL
端子面层：	Tin/Lead (Sn/Pb)
端子形式：	GULL WING
端子节距：	1.27 mm
端子位置：	DUAL

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