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  • DTC144EM3图
  • 深圳市芯脉实业有限公司

     该会员已使用本站11年以上
  • DTC144EM3 现货库存
  • 数量26800 
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  • 深圳市芯脉实业有限公司

     该会员已使用本站11年以上
  • DTC144EM3 现货库存
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  • DTC144EM3T5G图
  • 深圳市力拓辉电子有限公司

     该会员已使用本站13年以上
  • DTC144EM3T5G 现货库存
  • 数量3400 
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  • 深圳市芯福林电子有限公司

     该会员已使用本站15年以上
  • DTC144EM3T5G
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  • 现代芯城(深圳)科技有限公司

     该会员已使用本站15年以上
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     该会员已使用本站13年以上
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  • DTC144EM3T5G
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     该会员已使用本站17年以上
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  • DTC144EM3T5G
  • 数量236000 
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  • DTC144EM3T5G
  • 数量5000 
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  • 深圳市华斯顿电子科技有限公司

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  • DTC144EM3T5G
  • 数量13500 
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     该会员已使用本站15年以上
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  • 数量91752 
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  • DTC144EM3T5G
  • 数量8800 
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  • 深圳市惠诺德电子有限公司

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  • DTC144EM3T5G
  • 数量29500 
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  • DTC144EM3T5G
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     该会员已使用本站6年以上
  • DTC144EM3T5G
  • 数量5000 
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  • 宇芯通实业(深圳)有限公司

     该会员已使用本站8年以上
  • DTC144EM3T5G
  • 数量36000 
  • 厂家ON安森美 
  • 封装50V,NPN数字晶体管(BRT) 
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  • DTC144EM3图
  • 深圳市芯脉实业有限公司

     该会员已使用本站11年以上
  • DTC144EM3
  • 数量26800 
  • 厂家on 
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  • 批号22+ 
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  • 深圳市一线半导体有限公司

     该会员已使用本站16年以上
  • DTC144EM3T5G
  • 数量25000 
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  • 深圳市鹏睿康科技有限公司

     该会员已使用本站16年以上
  • DTC144EM3T5G
  • 数量20176 
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  • 深圳市捷立辉科技有限公司

     该会员已使用本站10年以上
  • DTC144EM3T5G
  • 数量29686 
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  • DTC144EM3T5G
  • 数量6600 
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  • DTC144EM3
  • 数量26800 
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  • DTC144EM3T5G
  • 数量660000 
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产品型号DTC144EM3的Datasheet PDF文件预览

MUN2213, MMUN2213L,  
MUN5213, DTC144EE,  
DTC144EM3, NSBC144EF3  
Digital Transistors (BRT)  
R1 = 47 kW, R2 = 47 kW  
http://onsemi.com  
PIN CONNECTIONS  
NPN Transistors with Monolithic Bias  
Resistor Network  
PIN 3  
COLLECTOR  
(OUTPUT)  
This series of digital transistors is designed to replace a single  
device and its external resistor bias network. The Bias Resistor  
Transistor (BRT) contains a single transistor with a monolithic bias  
network consisting of two resistors; a series base resistor and a base  
emitter resistor. The BRT eliminates these individual components by  
integrating them into a single device. The use of a BRT can reduce  
both system cost and board space.  
PIN 1  
BASE  
(INPUT)  
R1  
R2  
PIN 2  
EMITTER  
(GROUND)  
Features  
MARKING DIAGRAMS  
Simplifies Circuit Design  
Reduces Board Space  
SC59  
CASE 318D  
STYLE 1  
XX MG  
Reduces Component Count  
G
S and NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC-Q101  
Qualified and PPAP Capable  
1
SOT23  
CASE 318  
STYLE 6  
XXX MG  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
G
Compliant  
1
MAXIMUM RATINGS (T = 25°C)  
A
SC70/SOT323  
CASE 419  
Rating  
CollectorBase Voltage  
CollectorEmitter Voltage  
Collector Current Continuous  
Input Forward Voltage  
Symbol  
Max  
50  
Unit  
Vdc  
XX MG  
G
V
V
CBO  
CEO  
STYLE 3  
1
50  
Vdc  
SC75  
CASE 463  
STYLE 1  
I
C
100  
40  
mAdc  
Vdc  
XX M  
XX M  
V
IN(fwd)  
1
Input Reverse Voltage  
V
10  
Vdc  
IN(rev)  
SOT723  
CASE 631AA  
STYLE 1  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1
SOT1123  
CASE 524AA  
STYLE 1  
X M  
1
XXX  
M
G
=
=
=
Specific Device Code  
Date Code*  
PbFree Package  
(Note: Microdot may be in either location)  
*Date Code orientation may vary depending  
upon manufacturing location.  
ORDERING INFORMATION  
See detailed ordering, marking, and shipping information in  
the package dimensions section on page 2 of this data sheet.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
August, 2012 Rev. 0  
DTC144E/D  
MUN2213, MMUN2213L, MUN5213, DTC144EE, DTC144EM3, NSBC144EF3  
Table 1. ORDERING INFORMATION  
Device  
MUN2213T1G, SMUN2213T1G  
MMUN2213LT1G, SMMUN2213LT1G  
SMMUN2213LT3G  
Part Marking  
Package  
SC59  
Shipping  
8C  
A8C  
A8C  
8C  
3,000 / Tape & Reel  
3,000 / Tape & Reel  
10,000 / Tape & Reel  
3,000 / Tape & Reel  
3,000 / Tape & Reel  
8,000 / Tape & Reel  
8,000 / Tape & Reel  
SOT23  
SOT23  
MUN5213T1G, SMUN5213T1G  
DTC144EET1G  
SC70/SOT323  
SC75  
8C  
DTC144EM3T5G  
8C  
SOT723  
SOT1123  
NSBC144EF3T5G  
D
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
300  
250  
(1) SC75 and SC70/SOT323; Minimum Pad  
(2) SC59; Minimum Pad  
200  
(1) (2) (3) (4) (5)  
(3) SOT23; Minimum Pad  
(4) SOT1123; 100 mm , 1 oz. copper trace  
(5) SOT723; Minimum Pad  
2
150  
100  
50  
0
50 25  
0
25  
50  
75  
100  
125 150  
AMBIENT TEMPERATURE (°C)  
Figure 1. Derating Curve  
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2
MUN2213, MMUN2213L, MUN5213, DTC144EE, DTC144EM3, NSBC144EF3  
Table 2. THERMAL CHARACTERISTICS  
Characteristic  
THERMAL CHARACTERISTICS (SC59) (MUN2213)  
Total Device Dissipation  
Symbol  
Max  
Unit  
P
D
T
= 25°C  
(Note 1)  
(Note 2)  
(Note 1)  
(Note 2)  
230  
338  
1.8  
2.7  
mW  
A
Derate above 25°C  
mW/°C  
Thermal Resistance,  
Junction to Ambient  
(Note 1)  
(Note 2)  
R
540  
370  
°C/W  
°C/W  
°C  
q
JA  
Thermal Resistance,  
Junction to Lead  
(Note 1)  
(Note 2)  
R
264  
287  
q
JL  
Junction and Storage Temperature Range  
THERMAL CHARACTERISTICS (SOT23) (MUNN2213L)  
Total Device Dissipation  
T , T  
J
55 to +150  
stg  
P
D
T
A
= 25°C  
(Note 1)  
(Note 2)  
(Note 1)  
(Note 2)  
246  
400  
2.0  
3.2  
mW  
Derate above 25°C  
mW/°C  
Thermal Resistance,  
Junction to Ambient  
(Note 1)  
(Note 2)  
R
R
508  
311  
°C/W  
°C/W  
°C  
q
JA  
Thermal Resistance,  
Junction to Lead  
(Note 1)  
(Note 2)  
174  
208  
q
JL  
Junction and Storage Temperature Range  
THERMAL CHARACTERISTICS (SC70/SOT323) (MUN5213)  
Total Device Dissipation  
T , T  
J
55 to +150  
stg  
P
D
T
A
= 25°C  
(Note 1)  
(Note 2)  
(Note 1)  
(Note 2)  
202  
310  
1.6  
2.5  
mW  
Derate above 25°C  
mW/°C  
Thermal Resistance,  
Junction to Ambient  
(Note 1)  
(Note 2)  
R
R
618  
403  
°C/W  
°C/W  
°C  
q
JA  
Thermal Resistance,  
Junction to Lead  
(Note 1)  
(Note 2)  
280  
332  
q
JL  
Junction and Storage Temperature Range  
THERMAL CHARACTERISTICS (SC75) (DTC144EE)  
Total Device Dissipation  
T , T  
J
55 to +150  
stg  
P
D
T
A
= 25°C  
(Note 1)  
(Note 2)  
(Note 1)  
(Note 2)  
200  
300  
1.6  
2.4  
mW  
Derate above 25°C  
mW/°C  
Thermal Resistance,  
Junction to Ambient  
(Note 1)  
(Note 2)  
R
600  
400  
°C/W  
°C  
q
JA  
Junction and Storage Temperature Range  
THERMAL CHARACTERISTICS (SOT723) (DTC144EM3)  
Total Device Dissipation  
T , T  
J
55 to +150  
stg  
P
D
T
A
= 25°C  
(Note 1)  
(Note 2)  
(Note 1)  
(Note 2)  
260  
600  
2.0  
4.8  
mW  
Derate above 25°C  
mW/°C  
Thermal Resistance,  
Junction to Ambient  
(Note 1)  
(Note 2)  
R
480  
205  
°C/W  
°C  
q
JA  
Junction and Storage Temperature Range  
T , T  
J
55 to +150  
stg  
1. FR4 @ Minimum Pad.  
2. FR4 @ 1.0 x 1.0 Inch Pad.  
2
2
3. FR4 @ 100 mm , 1 oz. copper traces, still air.  
4. FR4 @ 500 mm , 1 oz. copper traces, still air.  
http://onsemi.com  
3
 
MUN2213, MMUN2213L, MUN5213, DTC144EE, DTC144EM3, NSBC144EF3  
Table 2. THERMAL CHARACTERISTICS  
Characteristic  
THERMAL CHARACTERISTICS (SOT1123) (NSBC144EF3)  
Total Device Dissipation  
Symbol  
Max  
Unit  
P
D
T
= 25°C  
(Note 3)  
(Note 4)  
(Note 3)  
(Note 4)  
254  
297  
2.0  
2.4  
mW  
A
Derate above 25°C  
mW/°C  
Thermal Resistance,  
Junction to Ambient  
(Note 3)  
(Note 4)  
R
q
493  
421  
°C/W  
JA  
Thermal Resistance, Junction to Lead  
(Note 3)  
R
193  
°C/W  
°C  
q
JL  
Junction and Storage Temperature Range  
T , T  
J
55 to +150  
stg  
1. FR4 @ Minimum Pad.  
2. FR4 @ 1.0 x 1.0 Inch Pad.  
2
2
3. FR4 @ 100 mm , 1 oz. copper traces, still air.  
4. FR4 @ 500 mm , 1 oz. copper traces, still air.  
Table 3. ELECTRICAL CHARACTERISTICS (T = 25°C, unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
CollectorBase Cutoff Current  
I
I
nAdc  
nAdc  
mAdc  
Vdc  
CBO  
(V = 50 V, I = 0)  
100  
500  
0.1  
CB  
E
CollectorEmitter Cutoff Current  
(V = 50 V, I = 0)  
CEO  
CE  
B
EmitterBase Cutoff Current  
(V = 6.0 V, I = 0)  
I
EBO  
EB  
C
CollectorBase Breakdown Voltage  
(I = 10 mA, I = 0)  
V
V
(BR)CBO  
(BR)CEO  
50  
50  
C
E
CollectorEmitter Breakdown Voltage (Note 5)  
(I = 2.0 mA, I = 0)  
Vdc  
C
B
ON CHARACTERISTICS  
DC Current Gain (Note 5)  
h
FE  
(I = 5.0 mA, V = 10 V)  
80  
140  
0.25  
C
CE  
CollectorEmitter Saturation Voltage (Note 5)  
(I = 10 mA, I = 0.3 mA)  
V
Vdc  
Vdc  
Vdc  
Vdc  
Vdc  
kW  
CE(sat)  
C
B
Input Voltage (off)  
(V = 5.0 V, I = 100 mA)  
V
i(off)  
i(on)  
1.2  
1.9  
CE  
C
Input Voltage (on)  
(V = 0.2 V, I = 3.0 mA)  
V
CE  
C
Output Voltage (on)  
(V = 5.0 V, V = 3.5 V, R = 1.0 kW)  
V
OL  
0.2  
CC  
B
L
Output Voltage (off)  
V
OH  
(V = 5.0 V, V = 0.5 V, R = 1.0 kW)  
4.9  
32.9  
0.8  
CC  
B
L
Input Resistor  
Resistor Ratio  
R1  
R /R  
47  
1.0  
61.1  
1.2  
1
2
5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%.  
http://onsemi.com  
4
 
MUN2213, MMUN2213L, MUN5213, DTC144EE, DTC144EM3, NSBC144EF3  
TYPICAL CHARACTERISTICS  
MUN2213, MMUN2213L, MUN5213, DTC144EE, DTC144EM3  
10  
1
1000  
I /I = 10  
V
= 10 V  
CE  
C
B
T
A
= 75°C  
25°C  
T
A
= 25°C  
25°C  
100  
10  
25°C  
75°C  
0.1  
0.01  
0
20  
40  
50  
1
10  
100  
I , COLLECTOR CURRENT (mA)  
C
I , COLLECTOR CURRENT (mA)  
C
Figure 2. VCE(sat) vs. IC  
Figure 3. DC Current Gain  
3.2  
100  
10  
1
f = 10 kHz  
= 0 V  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
T
A
= 25°C  
I
E
75°C  
T
= 25°C  
A
25°C  
0.1  
0.01  
0.4  
0
V
= 5 V  
O
0.001  
0
10  
20  
30  
40  
50  
0
2
4
6
8
10  
V , REVERSE VOLTAGE (V)  
R
V , INPUT VOLTAGE (V)  
in  
Figure 4. Output Capacitance  
Figure 5. Output Current vs. Input Voltage  
100  
V
= 0.2 V  
O
25°C  
75°C  
T
A
= 25°C  
10  
1
0.1  
0
10  
20  
30  
40  
50  
I , COLLECTOR CURRENT (mA)  
C
Figure 6. Input Voltage vs. Output Current  
http://onsemi.com  
5
MUN2213, MMUN2213L, MUN5213, DTC144EE, DTC144EM3, NSBC144EF3  
TYPICAL CHARACTERISTICS NSBC144EF3  
10  
1
1000  
I /I = 10  
25°C  
C
B
V
= 10 V  
CE  
150°C  
55°C  
25°C  
100  
55°C  
150°C  
0.1  
10  
1
0.01  
0
10  
20  
30  
40  
50  
0.1  
1
10  
100  
I , COLLECTOR CURRENT (mA)  
C
I , COLLECTOR CURRENT (mA)  
C
Figure 7. VCE(sat) vs. IC  
Figure 8. DC Current Gain  
100  
10  
1
2.4  
2.0  
1.6  
1.2  
0.8  
150°C  
f = 10 kHz  
= 0 V  
55°C  
I
E
T
= 25°C  
A
25°C  
0.1  
0.01  
0.4  
0
V
= 5 V  
24  
O
0.001  
0
10  
20  
30  
40  
50  
0
4
8
12  
16  
20  
28  
V , REVERSE VOLTAGE (V)  
R
V , INPUT VOLTAGE (V)  
in  
Figure 9. Output Capacitance  
Figure 10. Output Current vs. Input Voltage  
100  
25°C  
10  
55°C  
150°C  
1
V
= 0.2 V  
40  
O
0.1  
0
10  
20  
30  
50  
I , COLLECTOR CURRENT (mA)  
C
Figure 11. Input Voltage vs. Output Current  
http://onsemi.com  
6
MUN2213, MMUN2213L, MUN5213, DTC144EE, DTC144EM3, NSBC144EF3  
PACKAGE DIMENSIONS  
SC59  
CASE 318D04  
ISSUE H  
D
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.  
2. CONTROLLING DIMENSION: MILLIMETER.  
MILLIMETERS  
INCHES  
NOM  
3
DIM  
A
A1  
b
c
D
E
e
L
MIN  
1.00  
0.01  
0.35  
0.09  
2.70  
1.30  
1.70  
0.20  
2.50  
NOM  
1.15  
0.06  
0.43  
0.14  
2.90  
1.50  
1.90  
0.40  
2.80  
MAX  
MIN  
MAX  
0.051  
0.004  
0.020  
0.007  
0.122  
0.067  
0.083  
0.024  
0.118  
E
1.30  
0.10  
0.50  
0.18  
3.10  
1.70  
2.10  
0.60  
3.00  
0.039  
0.001  
0.014  
0.003  
0.106  
0.051  
0.067  
0.008  
0.099  
0.045  
0.002  
0.017  
0.005  
0.114  
0.059  
0.075  
0.016  
0.110  
H
E
1
2
b
e
H
E
STYLE 1:  
PIN 1. BASE  
2. EMITTER  
3. COLLECTOR  
C
A
L
A1  
SOLDERING FOOTPRINT*  
0.95  
0.037  
0.95  
0.037  
2.4  
0.094  
1.0  
0.039  
0.8  
0.031  
mm  
inches  
ǒ
Ǔ
SCALE 10:1  
*For additional information on our PbFree strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
http://onsemi.com  
7
MUN2213, MMUN2213L, MUN5213, DTC144EE, DTC144EM3, NSBC144EF3  
PACKAGE DIMENSIONS  
SOT23 (TO236)  
CASE 31808  
ISSUE AP  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
D
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH  
SEE VIEW C  
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM  
3
THICKNESS OF BASE MATERIAL.  
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,  
PROTRUSIONS, OR GATE BURRS.  
H
E
MILLIMETERS  
INCHES  
E
DIM  
A
A1  
b
c
D
E
e
L
L1  
MIN  
0.89  
0.01  
0.37  
0.09  
2.80  
1.20  
1.78  
0.10  
0.35  
2.10  
0°  
NOM  
1.00  
0.06  
0.44  
0.13  
2.90  
1.30  
1.90  
0.20  
0.54  
2.40  
−−−  
MAX  
MIN  
0.035  
0.001  
0.015  
0.003  
0.110  
0.047  
0.070  
0.004  
0.014  
0.083  
0°  
NOM  
0.040  
0.002  
0.018  
0.005  
0.114  
0.051  
0.075  
0.008  
0.021  
0.094  
−−−  
MAX  
0.044  
0.004  
0.020  
0.007  
0.120  
0.055  
0.081  
0.012  
0.029  
0.104  
10°  
1.11  
0.10  
0.50  
0.18  
3.04  
1.40  
2.04  
0.30  
0.69  
2.64  
10°  
c
1
2
b
0.25  
e
q
H
A
E
q
L
STYLE 6:  
A1  
PIN 1. BASE  
L1  
VIEW C  
2. EMITTER  
3. COLLECTOR  
SOLDERING FOOTPRINT  
0.95  
0.037  
0.95  
0.037  
2.0  
0.079  
0.9  
0.035  
mm  
inches  
ǒ
Ǔ
SCALE 10:1  
0.8  
0.031  
http://onsemi.com  
8
MUN2213, MMUN2213L, MUN5213, DTC144EE, DTC144EM3, NSBC144EF3  
PACKAGE DIMENSIONS  
SC70 (SOT323)  
CASE 41904  
ISSUE N  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
D
e1  
MILLIMETERS  
INCHES  
DIM  
A
A1  
A2  
b
c
D
E
e
e1  
L
MIN  
0.80  
0.00  
NOM  
0.90  
0.05  
0.70 REF  
0.35  
0.18  
2.10  
1.24  
1.30  
0.65 BSC  
0.38  
MAX  
1.00  
0.10  
MIN  
0.032  
0.000  
NOM  
0.035  
0.002  
0.028 REF  
0.014  
0.007  
0.083  
0.049  
0.051  
0.026 BSC  
0.015  
MAX  
0.040  
0.004  
3
E
H
E
1
2
0.30  
0.10  
1.80  
1.15  
1.20  
0.40  
0.25  
2.20  
1.35  
1.40  
0.012  
0.004  
0.071  
0.045  
0.047  
0.016  
0.010  
0.087  
0.053  
0.055  
b
e
0.20  
2.00  
0.56  
2.40  
0.008  
0.079  
0.022  
0.095  
H
2.10  
0.083  
E
STYLE 3:  
c
PIN 1. BASE  
2. EMITTER  
3. COLLECTOR  
A
A2  
0.05 (0.002)  
L
A1  
SOLDERING FOOTPRINT*  
0.65  
0.025  
0.65  
0.025  
1.9  
0.075  
0.9  
0.035  
0.7  
0.028  
mm  
inches  
ǒ
Ǔ
SCALE 10:1  
*For additional information on our PbFree strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
http://onsemi.com  
9
MUN2213, MMUN2213L, MUN5213, DTC144EE, DTC144EM3, NSBC144EF3  
PACKAGE DIMENSIONS  
SC75/SOT416  
CASE 463  
ISSUE F  
NOTES:  
E−  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: MILLIMETER.  
2
MILLIMETERS  
DIM MIN NOM MAX  
0.70  
A1 0.00  
INCHES  
NOM MAX  
3
MIN  
e
D−  
A
0.80  
0.05  
0.90 0.027 0.031 0.035  
0.10 0.000 0.002 0.004  
0.30 0.006 0.008 0.012  
0.25 0.004 0.006 0.010  
1.65 0.059 0.063 0.067  
0.90 0.027 0.031 0.035  
0.04 BSC  
1
b 3 PL  
0.20 (0.008)  
b
C
D
E
e
0.15  
0.10  
1.55  
0.70  
0.20  
0.15  
1.60  
0.80  
1.00 BSC  
0.15  
M
D
H
0.20 (0.008) E  
E
L
0.10  
1.50  
0.20 0.004 0.006 0.008  
1.70 0.061 0.063 0.065  
H
1.60  
E
STYLE 1:  
PIN 1. BASE  
2. EMITTER  
3. COLLECTOR  
C
A
L
A1  
SOLDERING FOOTPRINT*  
0.356  
0.014  
1.803  
0.071  
0.787  
0.031  
0.508  
0.020  
1.000  
0.039  
mm  
inches  
ǒ
Ǔ
SCALE 10:1  
*For additional information on our PbFree strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
http://onsemi.com  
10  
MUN2213, MMUN2213L, MUN5213, DTC144EE, DTC144EM3, NSBC144EF3  
PACKAGE DIMENSIONS  
SOT723  
CASE 631AA01  
ISSUE D  
NOTES:  
X−  
1. DIMENSIONING AND TOLERANCING PER ASME  
D
Y14.5M, 1994.  
A
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD  
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM  
THICKNESS OF BASE MATERIAL.  
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD  
FLASH, PROTRUSIONS OR GATE BURRS.  
b1  
Y−  
3
E
HE  
1
2
MILLIMETERS  
2X b  
3X  
C
DIM MIN  
NOM  
0.50  
0.21  
0.31  
0.12  
1.20  
0.80  
MAX  
0.55  
0.27  
0.37  
0.17  
1.25  
0.85  
2X e  
0.08 X Y  
A
b
0.45  
0.15  
0.25  
0.07  
1.15  
0.75  
SIDE VIEW  
TOP VIEW  
b1  
C
L
D
1
E
0.40 BSC  
1.20  
0.29 REF  
0.20  
e
H E  
L
1.15  
0.15  
1.25  
0.25  
L2  
STYLE 1:  
PIN 1. BASE  
2. EMITTER  
3. COLLECTOR  
3X  
L2  
BOTTOM VIEW  
RECOMMENDED  
SOLDERING FOOTPRINT*  
2X  
0.40  
2X 0.27  
PACKAGE  
OUTLINE  
1.50  
3X 0.52  
0.36  
DIMENSIONS: MILLIMETERS  
*For additional information on our PbFree strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
http://onsemi.com  
11  
MUN2213, MMUN2213L, MUN5213, DTC144EE, DTC144EM3, NSBC144EF3  
PACKAGE DIMENSIONS  
SOT1123  
CASE 524AA  
ISSUE C  
NOTES:  
X−  
D
1. DIMENSIONING AND TOLERANCING PER ASME  
Y14.5M, 1994.  
Y−  
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD  
FINISH. MINIMUM LEAD THICKNESS IS THE  
MINIMUM THICKNESS OF BASE MATERIAL.  
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD  
FLASH, PROTRUSIONS, OR GATE BURRS.  
1
2
3
E
TOP VIEW  
MILLIMETERS  
A
DIM MIN  
MAX  
0.40  
0.28  
0.20  
0.17  
0.85  
0.65  
0.40  
1.05  
A
b
0.34  
0.15  
b1 0.10  
c
D
E
e
0.07  
0.75  
0.55  
0.35  
0.95  
H
E
c
H
E
SIDE VIEW  
L
0.185 REF  
L2 0.05  
0.15  
STYLE 1:  
b
3X  
L2  
PIN 1. BASE  
2. EMITTER  
3. COLLECTOR  
0.08 X Y  
e
3X  
L
2X  
b1  
BOTTOM VIEW  
SOLDERING FOOTPRINT*  
1.20  
3X 0.34  
0.26  
1
0.38  
2X  
0.20  
PACKAGE  
OUTLINE  
DIMENSIONS: MILLIMETERS  
*For additional information on our PbFree strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,  
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DTC144E/D  
配单直通车
DTC144EM3T5G产品参数
型号:DTC144EM3T5G
是否无铅:不含铅
是否Rohs认证:符合
生命周期:Active
IHS 制造商:ROCHESTER ELECTRONICS LLC
包装说明:HALOGEN FREE AND ROHS COMPLIANT, CASE 631AA-01, 3 PIN
针数:3
制造商包装代码:CASE 631AA-01
Reach Compliance Code:unknown
风险等级:5.33
Is Samacsys:N
其他特性:BUILT-IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):80
JESD-30 代码:R-PDSO-F3
JESD-609代码:e3
湿度敏感等级:NOT SPECIFIED
元件数量:1
端子数量:3
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260
极性/信道类型:NPN
认证状态:COMMERCIAL
表面贴装:YES
端子面层:MATTE TIN
端子形式:FLAT
端子位置:DUAL
处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING
晶体管元件材料:SILICON
Base Number Matches:1
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