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    产品型号DTP0403的Datasheet PDF文件预览

    DT1  
    www.daysemi.jp  
    N-Channel 30-V (D-S) MOSFET  
    FEATURES  
    TrenchFET® Power MOSFET  
    PRODUCT SUMMARY  
    •
    •
    •
    VDS (V)  
    RDS(on) ()  
    Qg (Typ)  
    I
    D (A)a, e  
    90  
    100 % Rg and UIS Tested  
    Compliant to RoHS Directive 2011/65/EU  
    0.0029 at VGS = 10 V  
    0.0033 at VGS = 4.5 V  
    30  
    82 nC  
    90  
    APPLICATIONS  
    •
    •
    •
    OR-ing  
    Server  
    DC/DC  
    TO-220AB  
    D
    G
    S
    N-Channel MOSFET  
    G D S  
    Top View  
    ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)  
    A
    Parameter  
    Symbol  
    Limit  
    30  
    Unit  
    VDS  
    Drain-Source Voltage  
    Gate-Source Voltage  
    V
    VGS  
    20  
    90a, e  
    90e  
    28.8b, c  
    TC = 25 °C  
    TC = 70 °C  
    TA = 25 °C  
    TA = 70 °C  
    Continuous Drain Current (TJ = 175 °C)  
    ID  
    A
    27b, c  
    IDM  
    IAS  
    Pulsed Drain Current  
    90  
    Avalanche Current Pulse  
    Single Pulse Avalanche Energy  
    36  
    L = 0.1 mH  
    EAS  
    64.8  
    V
    A
    90a, e  
    3.13b, c  
    250a  
    TC = 25 °C  
    TA = 25 °C  
    TC = 25 °C  
    IS  
    Continuous Source-Drain Diode Current  
    TC = 70 °C  
    A = 25 °C  
    175  
    PD  
    Maximum Power Dissipation  
    W
    3.75b, c  
    T
    2.63b, c  
    TA = 70 °C  
    TJ, Tstg  
    Operating Junction and Storage Temperature Range  
    - 55 to 175  
    °C  
    THERMAL RESISTANCE RATINGS  
    Parameter  
    Maximum Junction-to-Ambientb, d  
    Symbol  
    Typ.  
    32  
    Max.  
    40  
    Unit  
    RthJA  
    t 10 sec  
    °C/W  
    RthJC  
    Maximum Junction-to-Case  
    Steady State  
    0.5  
    0.6  
    Notes:  
    a. Based on TC = 25 °C.  
    b. Surface mounted on 1" x 1" FR4 board.  
    c. t = 10 sec.  
    d. Maximum under steady state conditions is 90 °C/W.  
    e. Calculated based on maximum junction temperature. Package limitation current is 90 A.  
    1
    DT1  
    www.daysemi.jp  
    SPECIFICATIONS (T = 25 °C, unless otherwise noted)  
    J
    Parameter  
    Symbol  
    Test Conditions  
    Min.  
    Typ.  
    Max.  
    Unit  
    Static  
    VDS  
    VDS/TJ  
    VGS(th)/TJ  
    VGS(th)  
    VGS = 0 V, ID = 250 µA  
    ID = 250 µA  
    Drain-Source Breakdown Voltage  
    30  
    V
    V
    DS Temperature Coefficient  
    35  
    mV/°C  
    VGS(th) Temperature Coefficient  
    Gate-Source Threshold Voltage  
    Gate-Source Leakage  
    - 7.5  
    VDS = VGS, ID = 250 µA  
    1.5  
    90  
    2.5  
    100  
    1
    V
    IGSS  
    VDS = 0 V, VGS  
    =
    20 V  
    nA  
    VDS = 30 V, VGS = 0 V  
    DS = 30 V, VGS = 0 V, TJ = 55 °C  
    VDS 5 V, VGS = 10 V  
    IDSS  
    ID(on)  
    RDS(on)  
    gfs  
    Zero Gate Voltage Drain Current  
    On-State Drain Currenta  
    µA  
    A
    V
    10  
    VGS = 10 V, ID = 28.8 A  
    VGS = 4.5 V, ID = 27 A  
    0.0024  
    0.0027  
    160  
    0.0029  
    0.0033  
    Drain-Source On-State Resistancea  
    S
    Forward Transconductancea  
    Dynamicb  
    VDS = 15 V, ID = 28.8 A  
    Ciss  
    Coss  
    Crss  
    Input Capacitance  
    12065  
    1725  
    970  
    171  
    81.5  
    34  
    VDS = 15 V, VGS = 0 V, f = 1 MHz  
    VDS = 15 V, VGS = 10 V, ID = 28.8 A  
    Output Capacitance  
    Reverse Transfer Capacitance  
    pF  
    257  
    123  
    Qg  
    Total Gate Charge  
    nC  
    Qgs  
    Qgd  
    Rg  
    Gate-Source Charge  
    V
    DS = 15 V, VGS = 4.5 V, ID = 28.8 A  
    f = 1 MHz  
    Gate-Drain Charge  
    29  
    Gate Resistance  
    1.4  
    18  
    2.1  
    27  
    td(on)  
    tr  
    td(off)  
    tf  
    td(on)  
    tr  
    td(off)  
    tf  
    Turn-On Delay Time  
    Rise Time  
    11  
    17  
    VDD = 15 V, RL = 0.625   
    ID 24 A, VGEN = 10 V, Rg = 1   
    Turn-Off Delay Time  
    70  
    105  
    15  
    Fall Time  
    10  
    ns  
    Turn-On Delay Time  
    55  
    83  
    Rise Time  
    180  
    55  
    270  
    83  
    V
    DD = 15 V, RL = 0.67   
    ID 22.5 A, VGEN = 4.5 V, Rg = 1   
    Turn-Off Delay Time  
    Fall Time  
    12  
    18  
    Drain-Source Body Diode Characteristics  
    Continuous Source-Drain Diode Current  
    Pulse Diode Forward Currenta  
    Body Diode Voltage  
    IS  
    ISM  
    VSD  
    trr  
    TC = 25 °C  
    IS = 22 A  
    90  
    90  
    A
    0.8  
    52  
    1.2  
    78  
    V
    Body Diode Reverse Recovery Time  
    Body Diode Reverse Recovery Charge  
    Reverse Recovery Fall Time  
    Reverse Recovery Rise Time  
    ns  
    nC  
    Qrr  
    ta  
    70.2  
    27  
    105  
    IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C  
    ns  
    tb  
    25  
    Notes:  
    a. Pulse test; pulse width 300 µs, duty cycle 2 %.  
    b. Guaranteed by design, not subject to production testing.  
    Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation  
    of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum  
    rating conditions for extended periods may affect device reliability.  
    2
    DT1  
    www.daysemi.jp  
    TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)  
    90  
    75  
    60  
    45  
    30  
    15  
    0
    3.0  
    2.4  
    1.8  
    1.2  
    0.6  
    0.0  
    V
    = 10 V thru 4 V  
    GS  
    T
    = 25 °C  
    C
    T
    C
    = 125 °C  
    V
    GS  
    = 2 V  
    V
    GS  
    = 3 V  
    T
    C
    = - 55 °C  
    0.0  
    0.5  
    1.0  
    1.5  
    2.0  
    2.5  
    0
    1
    2
    3
    4
    V
    DS  
    - Drain-to-Source Voltage (V)  
    V
    GS  
    - Gate-to-Source Voltage (V)  
    Output Characteristics  
    Transfer Characteristics  
    600  
    500  
    400  
    300  
    200  
    100  
    0
    0.0032  
    0.0030  
    0.0028  
    0.0026  
    0.0024  
    0.0022  
    0.0020  
    T
    = 25 °C  
    C
    T
    V
    = 4.5 V  
    = 10 V  
    GS  
    = 125 °C  
    = - 55 °C  
    C
    V
    GS  
    T
    C
    0
    10  
    20  
    30  
    40  
    50  
    60  
    70  
    80  
    90  
    0
    15  
    30  
    45  
    60  
    75  
    90  
    I
    D
    - Drain Current (A)  
    I
    D
    - Drain Current (A)  
    Transconductance  
    RDS(on) vs. Drain Current  
    15 000  
    12 000  
    9000  
    6000  
    3000  
    0
    10  
    8
    V
    DS  
    = 15 V  
    I
    D
    = 28.8 A  
    C
    iss  
    V
    DS  
    = 24 V  
    6
    4
    C
    oss  
    2
    C
    rss  
    0
    0
    6
    12  
    18  
    24  
    30  
    0
    30  
    60  
    90  
    120  
    150  
    180  
    V
    DS  
    - Drain-to-Source Voltage (V)  
    Q
    - Total Gate Charge (nC)  
    g
    Capacitance  
    Gate Charge  
    3
    DT1  
    www.daysemi.jp  
    TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)  
    100  
    1.6  
    1.4  
    1.2  
    1.0  
    0.8  
    0.6  
    V
    = 10 V, I = 28.8 A  
    GS  
    D
    V
    = 4.5 V, I = 27 A  
    GS  
    D
    10  
    1
    T
    = 150 °C  
    J
    T
    = 25 °C  
    J
    0.1  
    0.01  
    0.001  
    0
    0.2  
    0.4  
    - Source-to-Drain Voltage (V)  
    SD  
    0.6  
    0.8  
    1
    - 50 - 25  
    0
    25  
    50  
    75 100 125 150 175  
    V
    T
    - Junction Temperature (°C)  
    J
    On-Resistance vs. Junction Temperature  
    Forward Diode Voltage vs. Temperature  
    0.005  
    0.004  
    0.003  
    0.002  
    0.001  
    0.000  
    2.8  
    2.4  
    2.0  
    1.6  
    1.2  
    0.8  
    I
    = 28.8 A  
    D
    T
    A
    = 125 °C  
    I
    D
    = 250 µA  
    T
    = 25 °C  
    A
    0
    2
    4
    6
    8
    10  
    - 50 - 25  
    0
    25  
    50  
    75 100 125 150 175  
    V
    GS  
    - Gate-to-Source Voltage (V)  
    T
    J
    - Temperature (°C)  
    RDS(on) vs. VGS vs. Temperature  
    Threshold Voltage  
    1000  
    *Limited by r  
    DS (on)  
    100  
    10  
    10 ms  
    100 ms  
    1
    1 s  
    10 s  
    0.1  
    dc  
    0.01  
    T
    = 25 °C  
    A
    Single Pulse  
    0.001  
    0.1  
    1
    10  
    100  
    V
    DS  
    - Drain-to-Source Voltage (V)  
    *V  
    GS  
    minimum V at which r  
    is specified  
    GS  
    DS(on)  
    Safe Operating Area, Junction-to-Ambient  
    4
    DT1  
    www.daysemi.jp  
    TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)  
    300  
    250  
    200  
    150  
    100  
    50  
    300  
    250  
    200  
    150  
    100  
    50  
    Package Limited  
    0
    0
    0
    25  
    50  
    75  
    100  
    125  
    150  
    175  
    0
    25  
    50  
    75  
    100  
    125  
    150  
    175  
    T
    T
    C
    - Case Temperature (°C)  
    - Case Temperature (°C)  
    C
    Current Derating*  
    Power Derating  
    *The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper  
    dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package  
    limit.  
    2
    1
    Duty Cycle = 0.5  
    0.2  
    0.1  
    0.1  
    0.05  
    0.02  
    Single Pulse  
    0.01  
    -4  
    -3  
    10  
    -2  
    10  
    -1  
    10  
    10  
    1
    10  
    Square Wave Pulse Duration (sec)  
    Normalized Thermal Transient Impedance, Junction-to-Case  
    5
    Package Information  
    TO-220AB  
    MILLIMETERS  
    INCHES  
    MIN.  
    A
    E
    DIM.  
    MIN.  
    4.25  
    0.69  
    1.20  
    0.36  
    14.85  
    10.04  
    2.41  
    4.88  
    1.14  
    6.09  
    2.41  
    13.35  
    3.32  
    3.54  
    2.60  
    MAX.  
    4.65  
    1.01  
    1.73  
    0.61  
    15.49  
    10.51  
    2.67  
    5.28  
    1.40  
    6.48  
    2.92  
    14.02  
    3.82  
    3.94  
    3.00  
    MAX.  
    0.183  
    0.040  
    0.068  
    0.024  
    0.610  
    0.414  
    0.105  
    0.208  
    0.055  
    0.255  
    0.115  
    0.552  
    0.150  
    0.155  
    0.118  
    F
    A
    b
    0.167  
    0.027  
    0.047  
    0.014  
    0.585  
    0.395  
    0.095  
    0.192  
    0.045  
    0.240  
    0.095  
    0.526  
    0.131  
    0.139  
    0.102  
    Ø P  
    b(1)  
    c
    D
    E
    e
    e(1)  
    F
    H(1)  
    J(1)  
    L
    1
    3
    2
    L(1)  
    Ø P  
    Q
    *
    M
    b(1)  
    ECN: X12-0208-Rev. N, 08-Oct-12  
    DWG: 5471  
    Notes  
    * M = 1.32 mm to 1.62 mm (dimension including protrusion)  
    Heatsink hole for HVM  
    C
    b
    e
    J(1)  
    e(1)  
    1
    Legal Disclaimer Notice  
    www.daysemi.jp  
    Disclaimer  
    ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE  
    RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.  
    Din-Tek Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,  
    “Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other  
    disclosure relating to any product.  
    Din-Tek makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or  
    the continuing production of any product. To the maximum extent permitted by applicable law, Din-Tek disclaims (i) any and all  
    liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,  
    consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular  
    purpose, non-infringement and merchantability.  
    Statements regarding the suitability of products for certain types of applications are based on Din-Tek’s knowledge of typical  
    requirements that are often placed on Din-Tek products in generic applications. Such statements are not binding statements  
    about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular  
    product with the properties described in the product specification is suitable for use in a particular application. Parameters  
    provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All  
    operating parameters, including typical parameters, must be validated for each customer application by the customer’s  
    technical experts. Product specifications do not expand or otherwise modify Din-Tek’s terms and conditions of purchase,  
    including but not limited to the warranty expressed therein.  
    Except as expressly indicated in writing, Din-Tek products are not designed for use in medical, life-saving, or life-sustaining  
    applications or for any other application in which the failure of the Din-Tek product could result in personal injury or death.  
    Customers using or selling Din-Tek products not expressly indicated for use in such applications do so at their own risk. Please  
    contact authorized Din-Tek personnel to obtain written terms and conditions regarding products designed for such applications.  
    No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by  
    any conduct of Din-Tek. Product names and markings noted herein may be trademarks of their respective owners.  
    Material Category Policy  
    Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the  
    definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council  
    of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment  
    (EEE) - recast, unless otherwise specified as non-compliant.  
    Please note that some Din-Tek documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that  
    all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.  
    Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free  
    requirements as per JEDEC JS709A standards. Please note that some Din-Tek documentation may still make reference  
    to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21  
    conform to JEDEC JS709A standards.  
    1
    配单直通车
    DTP0110D产品参数
    型号:DTP0110D
    生命周期：Obsolete
    Reach Compliance Code：unknown
    风险等级：5.84
    射频/微波设备类型：LINEAR DETECTOR
    Base Number Matches：1
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