EGP30C芯片引脚定义引脚图及功能IC贸易商引脚图技术参数-中国IC网-芯三七

产品型号EGP30C的概述

芯片EGP30C概述 EGP30C是一种广泛应用于电力和通信行业的高性能集成电路。其主要功能是用于电源管理和信号处理，使得系统在不同的电源条件下仍能保持稳定的性能。这种芯片由于其卓越的性能和可靠性，赢得了众多工程师和设计师的青睐。EGP30C具有多个输入输出端口，可以灵活地与其他电路或设备连通，从而实现更为复杂的功能。在现代电子设备中，随着对高性能和低功耗的追求，EGP30C逐渐成为一些关键应用的首选。例如，在数据中心、智能家居和物联网设备中，该芯片以其高度集成的特性得以广泛应用。芯片EGP30C详细参数 EGP30C芯片的详细参数如下： - 工作电压：3.3V至5V - 电流输出：最大提供500mA - 输入信号范围：0V至Vcc（Vcc为供电电压） - 工作温度范围：-40°C至85°C - 封装类型：SMD（表面贴装技术）或THT（穿孔式技术） - 尺寸：4mm x 4mm ...

产品型号EGP30C的Datasheet PDF文件预览

EGP30A THRU EGP30G

GLASS PASSIVATED FAST EFFICIENT RECTIFIER

Forward Voltage - 50 to 400 Volts

Reverse Current - 3.0 Amperes

Case Style GP20

FEATURES

♦ Plastic package has Underwriters Laboratories

Flammability Classification 94V-0

♦ Glass passivated cavity-free junction

♦ Superfast recovery time for high efficiency

♦ Low forward voltage,

1.0 (25.4)

MIN.

0.210 (5.3)

high current capability

♦ Low leakage current

0.190 (4.8)

DIA.

♦ High surge current capability

0.375 (9.5)

0.285 (7.2)

♦ High temperature metallurgically bonded construction

♦ High temperature soldering guaranteed:

300°C/10 seconds, 0.375" (9.5mm) lead length,

5 lbs. (2.3kg) tension

1.0 (25.4)

MIN.

0.042 (1.07)

MECHANICAL DATA

Case: Molded plastic over solid glass body

Terminals: Plated axial leads, solderable per MIL-STD-750,

Method 2026

Polarity: Color band denotes cathode end

Mounting Position: Any

0.037 (0.94)

DIA.

Dimensions in inches and (millimeters)

Glass-plastic encapsulation technique is covered by

Patent No.3,996,602 and brazed-lead assembly by Patent No. 3,930,306

Weight: 0.03 ounce, 0.8 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

EGP

30A

EGP

30B

EGP

30C

EGP

30D

EGP

30F

EGP

30G

SYMBOLS

V_RRM

V_RMS

V_DC

UNITS

Maximum repetitive peak reverse voltage

Maximum RMS voltage

100

150

105

150

200

140

200

300

210

300

400 Volts

280 Volts

400 Volts

Maximum DC blocking voltage

100

Maximum average forward rectified current

0.375" (9.5mm) lead length at T_A=55°C

I_(AV)

3.0

Amps

Peak forward surge current

8.3ms single half sine-wave superimposed

on rated load

I_FSM

V_F

125.0

Amps

Volts

Maximum instantaneous forward voltage at 3.0A

0.95

1.25

Maximum DC reverse current

at rated DC blocking voltage

T_A=25°C

T_A=125°C

5.0

100.0

I_R

trr

C_J

µA

Typical reverse recovery time _{(NOTE 1)}

Typical junction capacitance _{(NOTE 2)}

Typical thermal resistance _{(NOTE 3)}

50.0

95.0

75.0

R_ΘJA

R_ΘJL

20.0

8.0

°C/W

°C

Operating junction and storage temperature range

T_J,T_STG

-65 to +150

NOTES:

(1) Reverse recovery test conditions: I_F=0.5A, I_R=1.0A, Irr=0.25A

(2) Measured at 1.0 MH_Zand applied reverse voltage of 4.0 Volts

(3) Thermal resistance from junction to ambient, and from junction to lead at 0.375” (9.5mm) lead length, P.C.B. mounted

4/98

RATINGS AND CHARACTERISTIC CURVES EGP30A THRU EGP30G

FIG. 2 - MAXIMUM NON-REPETITIVE PEAK

FIG. 1 - MAXIMUM FORWARD CURRENT

FORWARD SURGE CURRENT

DERATING CURVE

175

3.0

2.0

1.0

T =T max.

RESISTIVE OR INDUCTIVE LOAD

0.375" (9.5mm) LEAD LENGTH

8.3ms SINGLE HALF SINE-WAVE

(JEDEC Method)

150

125

100

175

100

125

150

AMBIENT TEMPERATURE, °C

NUMBER OF CYCLES AT 60 H_Z

FIG. 4 - TYPICAL REVERSE LEAKAGE

CHARACTERISTICS

FIG. 3 - TYPICAL INSTANTANEOUS

FORWARD CHARACTERISTICS

100

PULSE WIDTH=300µs

1% DUTY CYCLE

T =150°C

T =125°C

T =150°C

T =25°C

T =75°C

0.1

T =25°C

0.1

0.01

EGP30A - EGP30D

EGP30F & EGP30G

T =25°C

0.01

0.2 0.4 0.6 0.8

1.0 1.2 1.4 1.6 1.8

INSTANTANEOUS FORWARD VOLTAGE,

0.001

100

120

VOLTS

PERCENT OF RATED PEAK REVERSE

VOLTAGE, %

FIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCE

FIG. 5 - TYPICAL JUNCTION CAPACITANCE

210

180

150

120

100

T =25°C

f=1.0 MH

Vsig=50mVp-p

EGP30A - EGP30D

EGP30F & EGP30G

0.1

0.01

t, PULSE DURATION, sec.

0.1

100

0.1

100

1,000

REVERSE VOLTAGE, VOLTS

电子百科

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