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  • 上海意淼电子科技有限公司

     该会员已使用本站14年以上
  • EL2227CS 现货库存
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  • 首天国际(深圳)科技有限公司

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  • 数量10000 
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  • 深圳市科雨电子有限公司

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  • 数量1001 
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  • 上海磐岳电子有限公司

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  • EL2227CS
  • 数量5800 
  • 厂家ELNETEC 
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  • 深圳市得捷芯城科技有限公司

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  • EL2227CS
  • 数量13386 
  • 厂家ELANTEC 
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  • 深圳市华科泰电子商行

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  • EL2227CS
  • 数量6800 
  • 厂家ELANTEC 
  • 封装SO-8 
  • 批号0224+ 
  • 绝对原装现货特价
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  • 深圳市欧立现代科技有限公司

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  • EL2227CS-T13
  • 数量5369 
  • 厂家ELANTEC 
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  • 北京首天国际有限公司

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  • 深圳市硅诺电子科技有限公司

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  • EL2227CS
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  • 厂家EL 
  • 封装原厂指定分销商,有意请来电或QQ洽谈 
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  • 北京首天国际有限公司

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  • 北京齐天芯科技有限公司

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  • 数量10000 
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  • 长荣电子

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  • 北京齐天芯科技有限公司

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  • 万三科技(深圳)有限公司

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  • 数量660000 
  • 厂家RENESAS(瑞萨电子) 
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  • 深圳市芯福林电子有限公司

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  • EL2227CS
  • 数量36000 
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  • 深圳市瑞天芯科技有限公司

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  • EL2227CS
  • 数量20000 
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  • EL2227CS图
  • 深圳市婷轩实业有限公司

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  • EL2227CS
  • 数量5000 
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  • 深圳市芯福林电子有限公司

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  • EL2227CS
  • 数量65000 
  • 厂家ELANTEC 
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  • 深圳市隆鑫创展电子有限公司

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  • EL2227CS
  • 数量30000 
  • 厂家TI 
  • 封装TSSOP16 
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  • 深圳市特拉特科技有限公司

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  • EL2227CS-T13
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  • 深圳市创思克科技有限公司

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  • EL2227CS
  • 数量7800 
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  • 深圳市雅维特电子有限公司

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  • 数量15000 
  • 厂家INTERSIL 
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  • EL2227CS图
  • 深圳市澳亿芯电子

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  • EL2227CS
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  • EL2227CS图
  • 深圳市凯睿晟科技有限公司

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  • EL2227CS图
  • 上海意淼电子科技有限公司

     该会员已使用本站14年以上
  • EL2227CS
  • 数量20000 
  • 厂家EL 
  • 封装SMD 
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  • EL2227CSZ图
  • 深圳市晨豪科技有限公司

     该会员已使用本站12年以上
  • EL2227CSZ
  • 数量89630 
  • 厂家INTERSIL 
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  • 深圳市华来深电子有限公司

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  • 数量8560 
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  • 深圳市顺鑫诚电子科技有限公司

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  • EL2227CS
  • 数量5000 
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  • 北京元坤伟业科技有限公司

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  • 深圳市凯信扬科技有限公司

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  • EL2227CS
  • 数量6800 
  • 厂家EL 
  • 封装SO-3.9 
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产品型号EL2227CS的概述

芯片EL2227CS的概述 EL2227CS是一款高性能的运算放大器,主要应用于高精度信号处理领域。该芯片由Intersil公司设计并制造,以其出色的电性能和广泛的应用场景而闻名。EL2227CS具备较高的增益带宽积和低噪声特性,非常适合用于音频设备、医疗仪器、数据采集系统等多个领域。 该芯片的设计宗旨在于提供高精度的信号放大,而其架构和工作原理使得EL2227CS能够在多种环境下稳定运行。此外,EL2227CS的低功耗特性也使其适合于便携式设备的使用。 芯片EL2227CS的详细参数 EL2227CS具体的技术参数包括如下几点: - 增益带宽积(GBW): 通常为20 MHz,确保在较高频率下依然能够维持理想的增益。 - 偏置电流: 输入偏置电流通常为50 nA,符合高精度测量的需求。 - 输入电阻: 较大的输入阻抗,约为1 MΩ,有效降低了信号源的负担。 - 输出电压摆幅: 具有较...

产品型号EL2227CS的Datasheet PDF文件预览

EL2227C  
Dual Very Low Noise Amplifier  
Features  
General Description  
• Voltage noise of only 1.9nV/ÖHz  
• Current noise of only 1.2pA/ÖHz  
• Bandwidth (-3dB) of 115MHz  
@AV = +2  
The EL2227C is a dual, low-noise amplifier, ideally suited to line  
receiving applications in ADSL and HDSLII designs. With low noise  
specification of just 1.9nV/ÖHz and 1.2pA/ÖHz, the EL2227C is per-  
fect for the detection of very low amplitude signals.  
• Gain-of-2 stable  
The EL2227C features a -3dB bandwidth of 115MHz and is gain-of-2  
stable. The EL2227C also affords minimal power dissipation with a  
supply current of just 4.8mA per amplifier. The amplifier can be pow-  
ered from supplies ranging from ±2.5V to ±12V.  
• Just 4.8mA per amplifier  
• 8-pin MSOP package  
• ±2.5V to ±12V operation  
The EL2227C is available in a space-saving 8-pin MSOP package as  
well as the industry-standard 8-pin SO. It can operate over the -40°C  
to +85°C temperature range.  
Applications  
• ADSL receivers  
• HDSLII receivers  
• Ultrasound input amplifiers  
• Wideband instrumentation  
• Communications equipment  
• AGC & PLL active filters  
• Wideband sensors  
Ordering Information  
Part No.  
Package  
8-Pin MSOP  
8-Pin MSOP  
8-Pin MSOP  
8-Pin SO  
Tape & Reel  
Outline #  
MDP0043  
MDP0043  
MDP0043  
MDP0027  
MDP0027  
MDP0027  
EL2227CY  
-
Connection Diagram  
EL2227CY-T13  
EL2227CY-T7  
EL2227CS  
13”  
7”  
-
EL2227CS-T13  
EL2227CS-T7  
8-Pin SO  
13”  
7”  
8-Pin SO  
VOUTA  
VINA-  
VINA+  
VS-  
1
2
3
4
8
7
6
5
VS+  
-
VOUTB  
VINB-  
VINB+  
+
-
+
EL2227C  
(8-Pin SO and 8-Pin MSOP)  
Note: All information contained in this data sheet has been carefully checked and is believed to be accurate as of the date of publication; however, this data sheet cannot be a “controlled document”. Current revisions, if any, to these  
specifications are maintained at the factory and are available upon your request. We recommend checking the revision level before finalization of your design documentation.  
© 2001 Elantec Semiconductor, Inc.  
EL2227C  
Dual Very Low Noise Amplifier  
Absolute Maximum Ratings (T = 25°C)  
A
Values beyond absolute maximum ratings can cause the device to be pre-  
maturely damaged. Absolute maximum ratings are stress ratings only  
and functional device operation is not implied  
Maximum Die Temperature  
Storage Temperature  
Operating Temperature  
Power Dissipation  
150°C  
-65°C to +150°C  
-40°C to +85°C  
See Curves  
Supply Voltage between VS+ and VS-  
Input Voltage  
28V  
VS- - 0.3V, VS +0.3V  
40mA  
ESD Voltage  
2kV  
Maximum Continuous Output Current  
Important Note:  
All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are at the  
specified temperature and are pulsed tests, therefore: TJ = TC = TA.  
Electrical Characteristics  
VS+ = +12V, VS - = -12V, RL = 500W and CL = 3pF to 0V, RF = RG = 620W, and TA = 25°C unless otherwise specified.  
Parameter  
Description  
Condition  
Min  
Typ  
Max  
Unit  
Input Characteristics  
VOS  
TCVOS  
IB  
Input Offset Voltage  
VCM = 0V  
[1]  
-0.2  
-0.6  
-3.4  
7.3  
3
mV  
µV/°C  
µA  
Average Offset Voltage Drift  
Input Bias Current  
VCM = 0V  
-9  
RIN  
Input Impedance  
MW  
pF  
CIN  
Input Capacitance  
1.6  
CMIR  
CMRR  
AVOL  
en  
Common-Mode Input Range  
Common-Mode Rejection Ratio  
Open-Loop Gain  
-11.8  
60  
+10.4  
V
for VIN from -11.8V to 10.4V  
-5V £ VOUT £ 5V  
f = 100kHz  
94  
87  
dB  
70  
dB  
Voltage Noise  
1.9  
1.2  
nV/ÖHz  
pA/ÖHz  
in  
Current Noise  
f = 100kHz  
Output Characteristics  
VOL  
VOH  
ISC  
Output Swing Low  
RL = 500W  
RL = 250W  
RL = 500W  
RL = 250W  
RL = 10W  
-10.4  
-9.8  
10.4  
10  
-10  
-9  
V
V
Output Swing High  
10  
9.5  
140  
V
V
Short Circuit Current  
180  
mA  
Power Supply Performance  
PSRR  
IS  
Power Supply Rejection Ratio  
VS is moved from ±2.25V to ±12V  
No Load  
65  
±2.5  
40  
95  
dB  
mA  
V
Supply Current (Per Amplifier)  
Operating Range  
4.8  
6.5  
VS  
±12  
Dynamic Performance  
SR  
Slew Rate[2]  
±2.5V square wave, measured 25%-75%  
(AV = +2), VO = ±1V  
50  
65  
V/µS  
ns  
tS  
Settling to 0.1% (AV = +2)  
-3dB Bandwidth  
BW  
HD2  
RF = 358W  
115  
93  
MHz  
dBc  
dBc  
dBc  
dBc  
2nd Harmonic Distortion  
f = 1MHz, VO = 2VP-P, RL = 500W, RF = 358W  
f = 1MHz, VO = 2VP-P, RL = 150W, RF = 358W  
f = 1MHz, VO = 2VP-P, RL = 500W, RF = 358W  
f = 1MHz, VO = 2VP-P, RL = 150W, RF = 358W  
83  
HD3  
3rd Harmonic Distortion  
94  
76  
2
EL2227C  
Dual Very Low Noise Amplifier  
Electrical Characteristics  
VS+= +5V, VS - = -5V, RL = 500W and CL = 3pF to 0V, RF = 620W & TA = 25°C unless otherwise specified.  
Parameter  
Description  
Condition  
Min  
Typ  
Max  
Unit  
Input Characteristics  
VOS  
TCVOS  
IB  
Input Offset Voltage  
VCM = 0V  
[1]  
0.2  
-0.6  
-3.7  
7.3  
3
mV  
µV/°C  
µA  
Average Offset Voltage Drift  
Input Bias Current  
VCM = 0V  
-9  
RIN  
Input Impedance  
MW  
pF  
CIN  
Input Capacitance  
1.6  
CMIR  
CMRR  
AVOL  
en  
Common-Mode Input Range  
Common-Mode Rejection Ratio  
Open-Loop Gain  
-4.8  
60  
3.4  
V
for VIN from -4.8V to 3.4V  
-5V £ VOUT £ 5V  
f = 100kHz  
97  
84  
dB  
70  
dB  
Voltage Noise  
1.9  
1.2  
nV/ÖHz  
pA/ÖHz  
in  
Current Noise  
f = 100kHz  
Output Characteristics  
VOL  
VOH  
ISC  
Output Swing Low  
RL = 500W  
RL = 250W  
RL = 500W  
RL = 250W  
RL = 10W  
-3.8  
-3.7  
3.7  
-3.5  
-3.5  
V
V
Output Swing High  
Short Circuit Current  
3.5  
3.5  
60  
V
3.6  
V
100  
mA  
Power Supply Performance  
PSRR  
IS  
Power Supply Rejection Ratio  
VS is moved from ±2.25V to ±12V  
No Load  
65  
±2.5  
35  
95  
dB  
mA  
V
Supply Current (Per Amplifier)  
Operating Range  
4.5  
5.5  
VS  
±12  
Dynamic Performance  
SR  
Slew Rate[2]  
±2.5V square wave, measured 25%-75%  
(AV = +2), VO = ±1V  
45  
77  
90  
98  
90  
94  
79  
V/µS  
ns  
tS  
Settling to 0.1% (AV = +2)  
-3dB Bandwidth  
BW  
HD2  
RF = 358W  
MHz  
dBc  
dBc  
dBc  
dBc  
2nd Harmonic Distortion  
f = 1MHz, VO = 2VP-P, RL = 500W, RF = 358W  
f = 1MHz, VO = 2VP-P, RL = 150W, RF = 358W  
f = 1MHz, VO = 2VP-P, RL = 500W, RF = 358W  
f = 1MHz, VO = 2VP-P, RL = 150W, RF = 358W  
HD3  
3rd Harmonic Distortion  
3
EL2227C  
Dual Very Low Noise Amplifier  
Typical Performance Curves  
Non-inverting Frequency Response for Various R  
Inverting Frequency Response for Various R  
F
F
4
3
2
4
3
R =100W  
F
2
R =350W  
F
R =1kW  
F
R =620W  
F
1
0
1
0
-1  
-2  
-3  
-4  
-5  
-6  
R =100W  
F
-1  
-2  
-3  
-4  
-5  
-6  
R =420W  
F
R =350W  
F
R =620W  
F
R =1kW  
F
V =±12V  
V =±12V  
S
S
A =+2  
A =-1  
V
V
R =500W  
L
R =500W  
L
1M  
10M  
100M 200M  
1M  
10M  
Frequency (Hz)  
100M 200M  
Frequency (Hz)  
Non-inverting Frequency Response (Gain)  
Inverting Frequency Response (Gain)  
4
3
4
3
2
2
A =-2  
V
A =-1  
V
1
1
A =2  
V
0
0
-1  
-2  
-3  
-4  
-5  
-6  
A =10  
V
A =5  
-1  
-2  
-3  
-4  
-5  
-6  
A =-10  
V
V
A =-5  
V
V =±12V  
V =±12V  
S
R =420W  
R =500W  
L
S
R =350W  
F
F
R =500W  
L
1M  
10M  
Frequency (Hz)  
100M 200M  
1M  
10M  
100M 200M  
Frequency (Hz)  
Non-inverting Frequency Response (Phase)  
Inverting Frequency Response (Phase)  
135  
90  
135  
90  
45  
45  
A =5  
V
A =-1  
V
0
0
A =2  
V
-45  
-45  
A =-10  
V
A =-2  
V
-90  
-90  
A =10  
V
A =-5  
V
-135  
-180  
-225  
-270  
-315  
-135  
-180  
-225  
-270  
-315  
V =±12  
S
V =±12V  
S
R =350W  
R =420W  
F
F
R =500W  
L
R =500W  
L
100M 200M  
1M  
10M  
1M  
10M  
Frequency (Hz)  
100M 200M  
Frequency (Hz)  
4
EL2227C  
Dual Very Low Noise Amplifier  
Typical Performance Curves  
Non-inverting Frequency Response for Various  
Input Signal Levels  
Inverting Frequency Response for Various Input  
Signal Levels  
4
4
3
V =±12V  
S
3
2
R =350W  
F
A =+2  
V
2
V
IN  
=20mV  
V
V
=1.4V  
=2.8V  
V =20mV  
IN PP  
PP  
IN  
PP  
R =500W  
L
V
IN  
=100mV  
PP  
1
1
0
0
-1  
-2  
-3  
-4  
-5  
-6  
-1  
-2  
-3  
-4  
-5  
-6  
IN  
PP  
V
IN  
=500mV  
PP  
V
IN  
=280mV  
PP  
V
IN  
=1V  
=2V  
PP  
V =±12V  
R =420W  
R =500W  
S
F
V
IN  
PP  
L
A =-1  
V
100k  
1M  
10M  
100M  
1M  
10M  
Frequency (Hz)  
100M 200M  
Frequency (Hz)  
Non-inverting Frequency Response for Various C  
Inverting Frequency Response for Various C  
L
L
5
4
4
3
C =30pF  
L
C =30pF  
L
3
2
C =12pF  
L
C =12pF  
L
2
1
1
0
0
-1  
-2  
-3  
-4  
-5  
-6  
C =2pF  
L
C =2pF  
L
-1  
-2  
-3  
-4  
-5  
V =±12V  
S
V =±12V  
S
R =620W  
R =420W  
F
F
R =500W  
R =500W  
L
L
A =+2  
V
A =-1  
V
1M  
10M  
Frequency (Hz)  
100M 200M  
1M  
10M  
Frequency (Hz)  
100M 200M  
Non-inverting Frequency Response for Various R  
Frequency Response for Various Output DC  
Levels  
L
4
3
4
3
V =+10V  
O
R =100W  
L
R =500W  
L
V
O
=-10V  
V =+5V  
O
2
2
1
1
0
0
R =50W  
L
-1  
-2  
-3  
-4  
-5  
-6  
-1  
-2  
-3  
-4  
-5  
-6  
V
=0V  
O
V =-5V  
O
V =±12V  
S
V =±12V  
S
R =620W  
R =620W  
F
F
R =500W  
C =15pF  
L
L
A =+2  
V
A =+2  
V
100M  
1M  
10M  
Frequency (Hz)  
100M 200M  
100k  
1M  
10M  
Frequency (Hz)  
5
EL2227C  
Dual Very Low Noise Amplifier  
Typical Performance Curves  
3dB Bandwidth vs Supply Voltage  
Peaking vs Supply Voltage  
140  
4
3.5  
3
A =+2  
A =+2  
V
R =620W  
F
V
A =+2  
V
R =620W  
F
120  
100  
80  
60  
40  
20  
0
A =-1  
R =500W  
L
R =500W  
L
V
2.5  
2
A =+2  
A =-1  
V
V
A =-2  
V
A =+10  
V
1.5  
1
A =-10  
V
A =+5  
V
A =-5  
V
A =+10  
A =-2  
V
V
A =+5  
V
A =-5  
V
0.5  
0
A =-10  
V
2
4
6
8
10  
12  
2
4
6
8
10  
12  
Supply Voltage (±V)  
Supply Voltage (±V)  
Large Signal Step Response  
V =±12V  
Large Signal Step Response  
V =±2.5V  
S
S
R =620W  
F
R =620W  
F
A =2  
V
A =2  
V
R =500W  
L
R =500W  
L
0.5V/div  
0.5V/div  
100ns/div  
100ns/div  
Small Signal Step Response  
V =±12V  
Small Signal Step Response  
V =±2.5V  
S
S
R =620W  
F
R =620W  
F
A =2  
V
A =2  
V
R =500W  
L
R =500W  
L
20mV/div  
20mV/div  
100ns/div  
100ns/div  
6
EL2227C  
Dual Very Low Noise Amplifier  
Typical Performance Curves  
Group Delay vs Frequency  
Differential Gain/Phase vs DC Input Voltage at  
3.58MHz  
10  
8
0.1  
0.08  
0.06  
0.04  
0.02  
0
A =5V  
V
6
4
2
A =2V  
V
A =2  
R =620W  
F
V
dP  
0
R =150W  
L
-2  
-4  
-6  
-8  
-10  
f
O
=3.58MHz  
V =±12V  
S
R =620W  
F
dG  
R =500W  
L
P
=-20dBm into 50W  
IN  
-0.02  
100M  
1
1M  
10M  
Frequency (Hz)  
-1  
-0.5  
0
0.5  
DC Input Voltage (V)  
Supply Current vs Supply Voltage  
Closed Loop Output Impedance vs Frequency  
12  
100  
10  
1.2/div  
6
1
0.1  
0.01  
1.2/div  
0
100M  
0
6
12  
10k  
100k  
1M  
10M  
Supply Voltage (±V)  
Frequency (Hz)  
CMRR  
PSRR  
110  
90  
70  
50  
30  
10  
0
20  
40  
V -  
S
60  
V +  
S
80  
V =±12  
S
100  
1k  
10  
100  
1k  
10k  
100k  
1M  
10M 100M  
10k  
100k  
1M  
10M  
100M  
Frequency (Hz)  
Frequency (Hz)  
7
EL2227C  
Dual Very Low Noise Amplifier  
Typical Performance Curves  
1MHz 2nd and 3rd Harmonic Distortion vs Output  
1MHz 2nd and 3rd Harmonic Distortion vs Output  
Swing for V =±2.5V  
Swing for V =±12V  
S
S
-40  
-50  
-50  
-60  
A =2  
A =2  
V
V
R =620W  
R =358W  
F
F
R =500W  
L
R =500W  
L
2nd H  
3rd H  
-60  
-70  
2nd H  
-70  
-80  
-80  
3rd H  
1.5  
-90  
-90  
-100  
-100  
0
4
8
12  
16  
20  
0
0.5  
1
2
2.5  
Output Swing (V  
)
Output Swing (V )  
PP  
PP  
Total Harmonic Distortion vs Frequency @ 2V  
V =±2.5V  
S
Total Harmonic Distortion vs Frequency @ 2V  
V =±12V  
S
PP  
PP  
-60  
-70  
-60  
-70  
R =50  
L
-80  
R =50  
L
-80  
-90  
-90  
R =500  
L
-100  
-110  
-120  
-100  
-110  
-120  
R =500  
L
1
10  
100  
1000  
1
10  
100  
1000  
Frequency (kHz)  
Frequency (kHz)  
Voltage and Current Noise vs Frequency  
Channel to Channel Isolation vs Frequency  
10  
9
0
-20  
8
A ®  
B ®  
B
A
7
I
N
-40  
6
5
-60  
4
3
-80  
E
N
2
1
10  
-100  
100k  
100  
1k  
10k  
100k  
1M  
10M  
Frequency (Hz)  
100M  
Frequency (Hz)  
8
EL2227C  
Dual Very Low Noise Amplifier  
Typical Performance Curves  
-3dB Bandwidth vs Temperature  
Supply Current vs Temperature  
150  
10  
9.5  
9
140  
130  
120  
110  
100  
90  
80  
8.5  
-40 -20  
0
20  
40  
60  
80 100 120 140  
-50  
0
50  
100  
150  
150  
1
Die Temperature (°C)  
Die Temperature (°C)  
V
vs Temperature  
Input Bias Current vs Temperature  
OS  
2
0
-2  
-3  
-4  
-5  
-6  
-2  
-4  
-50  
0
50  
Die Temperature (°C)  
100  
150  
-50  
0
50  
100  
Die Temperature (°C)  
Slew Rate vs Temperature  
Settling Time vs Accuracy  
55  
53  
51  
49  
47  
45  
160  
140  
120  
100  
80  
V =±2.5V  
=2V  
S
V
O
PP  
V =±12V  
S
V
O
=5V  
PP  
60  
V =±12V  
=2V  
S
40  
V
O
PP  
20  
0
0.01  
-50  
0
50  
100  
150  
0.1  
Die Temperature (°C)  
Accuracy (%)  
9
EL2227C  
Dual Very Low Noise Amplifier  
Typical Performance Curves  
Package Power Dissipation vs Ambient Temp.  
JEDEC JESD51-3 Low Effective Thermal Conductivity Test Board  
0.9  
781mW  
0.8  
0.7  
607mW  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
0
25  
50  
75 85 100  
125  
150  
Ambient Temperature (°C)  
10  
EL2227C  
Dual Very Low Noise Amplifier  
Pin Descriptions  
EL2227CY  
8-Pin MSOP  
EL2227CS  
8-Pin SO  
Pin Name  
Pin Function  
Equivalent Circuit  
1
1
VOUTA  
Output  
V +  
S
V
OUT  
Circuit 1  
2
2
VINA-  
Input  
V +  
S
V
+
IN  
V -  
IN  
V -  
S
Circuit 2  
3
4
5
6
7
8
3
4
5
6
7
8
VINA+  
VS-  
Input  
Supply  
Input  
Reference Circuit 2  
VINB+  
VINB-  
VOUTB  
VS+  
Input  
Reference Circuit 2  
Reference Circuit 1  
Output  
Supply  
11  
EL2227C  
Dual Very Low Noise Amplifier  
Applications Information  
choice for applications such as active filters, sample-  
and-holds, or integrators.  
Product Description  
The EL2227C is a dual voltage feedback operational  
amplifier designed especially for DMT ADSL and other  
applications requiring very low voltage and current  
noise. It also features low distortion while drawing mod-  
erately low supply current and is built on Elantec's  
proprietary high-speed complementary bipolar process.  
The EL2227C use a classical voltage-feedback topology  
which allows them to be used in a variety of applications  
where current-feedback amplifiers are not appropriate  
because of restrictions placed upon the feedback ele-  
ment used with the amplifier. The conventional topology  
of the EL2227C allows, for example, a capacitor to be  
placed in the feedback path, making it an excellent  
ADSL CPE Applications  
The low noise EL2227C amplifier is specifically  
designed for the dual differential receiver amplifier  
function with ADSL transceiver hybrids as well as other  
low-noise amplifier applications. A typical ADSL CPE  
line interface circuit is shown in Figure 1. The EL2227C  
is used in receiving DMT down stream signal. With  
careful transceiver hybrid design and the EL2227C  
1.9nV/ÖHz voltage noise and 1.2pA/ÖHz current noise  
performance, -140dBm/Hz system background noise  
performance can be easily achieved.  
Driver  
Input  
R
Line +  
OUT  
+
-
R
R
F
R
G
Z
LINE  
F
R
Line -  
OUT  
-
+
R
F
R
R
IN  
-
Receive  
Out +  
+
Receive  
Amplifiers  
+
-
R
R
F
R
IN  
Receive  
Out -  
Figure 1. Typical Line Interface Connection  
12  
EL2227C  
Dual Very Low Noise Amplifier  
qJA =Thermal Resistance of the Package  
Disable Function  
The EL2227C is in the standard dual amplifier package  
without the enable/disable function. A simple way to  
implement the enable/disable function is depicted  
below. When disabled, both the positive and negative  
supply voltages are disconnected (see Figure 2 below.)  
PDMAX =Maximum Power Dissipation of 1 Amplifier  
VS =Supply Voltage  
IMAX =Maximum Supply Current of 1 Amplifier  
VOUTMAX=Maximum Output Voltage Swing of the  
Application  
+12V  
RL =Load Resistance  
1k  
1µF  
10k  
To serve as a guide for the user, we can calculate maxi-  
mum allowable supply voltages for the example of the  
10k  
1k  
video cable-driver below since we know that TJMAX  
=
+
150°C, TMAX = 75°C, ISMAX = 9.5mA, and the package  
qJAs are shown in Table 1. If we assume (for this exam-  
ple) that we are driving a back-terminated video cable,  
then the maximum average value (over duty-cycle) of  
VOUTMAX is 1.4V, and RL = 150W, giving the results  
seen in Table 1.  
-
1µF  
4.7µF  
1k  
75k  
Table 1  
Max PDISS  
TMAX  
@
Part  
Package  
SO8  
qJA  
Max VS  
Power Dissipation  
EL2227CS  
EL2227CY  
160°C/W  
206°C/W  
0.406W @ 85°C  
0.315W @ 85°C  
With the wide power supply range and large output drive  
capability of the EL2227C, it is possible to exceed the  
150°C maximum junction temperatures under certain  
load and power-supply conditions. It is therefore impor-  
tant to calculate the maximum junction temperature  
(TJMAX) for all applications to determine if power sup-  
ply voltages, load conditions, or package type need to be  
modified for the EL2227C to remain in the safe operat-  
ing area. These parameters are related as follows:  
MSOP8  
Single-Supply Operation  
The EL2227C have been designed to have a wide input  
and output voltage range. This design also makes the  
EL2227C an excellent choice for single-supply opera-  
tion. Using a single positive supply, the lower input  
voltage range is within 200mV of ground (RL = 500W),  
and the lower output voltage range is within 875mV of  
ground. Upper input voltage range reaches 3.6V, and  
output voltage range reaches 3.8V with a 5V supply and  
RL = 500W. This results in a 2.625V output swing on a  
single 5V supply. This wide output voltage range also  
allows single-supply operation with a supply voltage as  
high as 28V.  
T
= T  
+ (q ´ PD  
)
MAXTOTAL  
JMAX  
MAX  
JA  
where:  
PDMAXTOTAL is the sum of the maximum power dissi-  
pation of each amplifier in the package (PDMAX  
)
PDMAX for each amplifier can be calculated as follows:  
Gain-Bandwidth Product and the -3dB  
Bandwidth  
V
OUTMAX  
PD  
= 2 ´ V ´ I  
+ (V – V  
) ´ ----------------------------  
MAX  
S
SMAX  
S
OUTMAX  
R
L
The EL2227C have a gain-bandwidth product of  
137MHz while using only 5mA of supply current per  
amplifier. For gains greater than 2, their closed-loop ----  
-3dB bandwidth is approximately equal to the gain-  
where:  
TMAX =Maximum Ambient Temperature  
13  
EL2227C  
Dual Very Low Noise Amplifier  
bandwidth product divided by the noise gain of the cir-  
cuit. For gains less than 2, higher-order poles in the  
amplifiers' transfer function contribute to even higher  
closed loop bandwidths. For example, the EL2227C  
have a -3dB bandwidth of 115MHz at a gain of +2, drop-  
ping to 28MHz at a gain of +5. It is important to note  
that the EL2227C have been designed so that this  
“extra” bandwidth in low-gain applications does not  
come at the expense of stability. As seen in the typical  
performance curves, the EL2227C in a gain of +2 only  
exhibit 0.5dB of peaking with a 1000W load.  
Output Drive Capability  
The EL2227C have been designed to drive low imped-  
ance loads. They can easily drive 6VPP into a 500W load.  
This high output drive capability makes the EL2227C an  
ideal choice for RF, IF and video applications.  
Printed-Circuit Layout  
The EL2227C are well behaved, and easy to apply in  
most applications. However, a few simple techniques  
will help assure rapid, high quality results. As with any  
high-frequency device, good PCB layout is necessary  
for optimum performance. Ground-plane construction is  
highly recommended, as is good power supply bypass-  
ing. A 0.1µF ceramic capacitor is recommended for  
bypassing both supplies. Lead lengths should be as short  
as possible, and bypass capacitors should be as close to  
the device pins as possible. For good AC performance,  
parasitic capacitances should be kept to a minimum at  
both inputs and at the output. Resistor values should be  
kept under 5kW because of the RC time constants associ-  
ated with the parasitic capacitance. Metal-film and  
carbon resistors are both acceptable, use of wire-wound  
resistors is not recommended because of their parasitic  
inductance. Similarly, capacitors should be low-induc-  
tance for best performance.  
14  
EL2227C  
Dual Very Low Noise Amplifier  
General Disclaimer  
Specifications contained in this data sheet are in effect as of the publication date shown. Elantec Semiconductor, Inc. reserves the right to make  
changes in the circuitry or specifications contained herein at any time without notice. Elantec Semiconductor, Inc. assumes no responsibility for  
the use of any circuits described herein and makes no representations that they are free from patent infringement.  
WARNING - Life Support Policy  
Elantec Semiconductor, Inc. products are not authorized for and should  
not be used within Life Support Systems without the specific written con-  
sent of Elantec Semiconductor, Inc. Life Support systems are equipment  
intended to support or sustain life and whose failure to perform when  
properly used in accordance with instructions provided can be reasonably  
expected to result in significant personal injury or death. Users contem-  
plating application of Elantec Semiconductor, Inc. Products in Life  
Support Systems are requested to contact Elantec Semiconductor, Inc. fac-  
tory headquarters to establish suitable terms & conditions for these  
applications. Elantec Semiconductor, Inc.’s warranty is limited to replace-  
ment of defective components and does not cover injury to persons or  
property or other consequential damages.  
Elantec Semiconductor, Inc.  
675 Trade Zone Blvd.  
Milpitas, CA 95035  
Telephone: (408) 945-1323  
(888) ELANTEC  
(408) 945-9305  
Fax:  
European Office: +44-118-977-6020  
Japan Technical Center: +81-45-682-5820  
Printed in U.S.A.  
15  
配单直通车
EL2227CS产品参数
型号:EL2227CS
生命周期:Transferred
包装说明:SO-8
Reach Compliance Code:unknown
风险等级:5.68
Is Samacsys:N
放大器类型:OPERATIONAL AMPLIFIER
最大平均偏置电流 (IIB):9 µA
标称共模抑制比:97 dB
最大输入失调电压:3000 µV
JESD-30 代码:R-PDSO-G8
负供电电压上限:-14 V
标称负供电电压 (Vsup):-5 V
功能数量:2
端子数量:8
最高工作温度:85 °C
最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY
封装代码:SOP
封装形状:RECTANGULAR
封装形式:SMALL OUTLINE
认证状态:Not Qualified
标称压摆率:45 V/us
子类别:Operational Amplifier
供电电压上限:14 V
标称供电电压 (Vsup):5 V
表面贴装:YES
技术:BIPOLAR
温度等级:INDUSTRIAL
端子形式:GULL WING
端子位置:DUAL
标称均一增益带宽:137000 kHz
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