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  • 北京元坤伟业科技有限公司

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产品型号EL7154CSZ-T7的概述

芯片EL7154CSZ-T7的概述 EL7154CSZ-T7是一款由美信半导体(Maxim Integrated)生产的高性能线性驱动器芯片,专为需要高精度电压参考和高增益信号放大应用而设计。该芯片兼具高带宽和低失真特性,广泛应用于专业音频设备、医疗成像系统、传感器接口、以及工业自动化等各类电子产品。EL7154CSZ-T7以其卓越的线性增益和相对较低功耗的优势,使得它在现代电子设计中得到了广泛的关注和应用。 芯片EL7154CSZ-T7的详细参数 EL7154CSZ-T7的参数规格如下: - 增益带宽积:80MHz - 增益:具有可调增益,可以从1V/V到1000V/V范围内设置 - 输入电压范围:-0.3V到+6V - 输出电流能力:典型情况下为75mA - 相位裕度:大于60度,提供良好的稳定性 - 工作温度范围:-40°C至+85°C - 封装类型:SO-8 - 功耗:在典型条...

产品型号EL7154CSZ-T7的Datasheet PDF文件预览

EL7154  
®
Data Sheet  
May 6, 2005  
FN7278.1  
High Speed, Monolithic Pin Driver  
Features  
The EL7154 3-state pin driver is particularly well suited for  
ATE and level shifting applications. The 4A peak drive  
capability, makes the EL7154 an excellent choice when  
driving high speed capacitive lines.  
• Comparatively low cost  
• 3-State output  
• 3V and 5V Input compatible  
• Clocking speeds up to 10MHz  
• 20ns Switching/delay time  
• 4A Peak drive  
The p-channel MOSFET is completely isolated from the  
power supply, providing a high degree of flexibility. Pin (7)  
can be grounded, and the output can be taken from pin (8)  
when a “source follower” output is desired. Then n-channel  
MOSFET has an isolated drain, but shares a common bus  
with pre-drivers and level shifter circuits. This is necessary to  
ensure that the nchannel device can turn off effectively when  
• Isolated drains  
• Low output impedance—2.5  
• Low quiescent current—5mA  
• Wide operating voltage—4.5V–16V  
• Isolated P-channel device  
V goes below GND. In some power-FET and IGBT  
L
applications, negative drive is desirable to insure effective  
turn-off. The EL7154 can be used in these applications by  
returning V to a moderate negative potential.  
L
• Separate ground and V pins  
L
Pinout  
Pb-Free available (RoHS compliant)  
EL7154  
(8-PIN PDIP, SOIC)  
TOP VIEW  
Applications  
• Loaded circuit board testers  
• Digital testers  
• Level shifting below GND  
• IGBT drivers  
• CCD drivers  
Ordering Information  
TAPE &  
PART NUMBER  
EL7154CN  
PACKAGE  
8-Pin PDIP  
8-Pin SOIC  
8-Pin SOIC  
8-Pin SOIC  
REEL  
PKG. DWG. #  
MDP0031  
MDP0027  
MDP0027  
MDP0027  
MDP0027  
-
-
EL7154CS  
EL7154CS-T7  
EL7154CS-T13  
7”  
13”  
-
EL7154CSZ  
(See Note)  
8-Pin SOIC  
(Pb-free)  
Truth Table  
EL7154CSZ-T7  
(See Note)  
8-Pin SOIC  
(Pb-free)  
7”  
MDP0027  
MDP0027  
3-STATE  
INPUT  
P
N
OUT  
OUT  
EL7154CSZ-T13  
(See Note)  
8-Pin SOIC  
(Pb-free)  
13”  
0
0
1
1
0
1
0
1
Open  
Open  
HIGH  
Open  
Open  
Open  
Open  
LOW  
NOTE: Intersil Pb-free products employ special Pb-free material sets;  
molding compounds/die attach materials and 100% matte tin plate  
termination finish, which are RoHS compliant and compatible with  
both SnPb and Pb-free soldering operations. Intersil Pb-free products  
are MSL classified at Pb-free peak reflow temperatures that meet or  
exceed the Pb-free requirements of IPC/JEDEC J STD-020.  
Manufactured under U.S. Patent Nos. 5,334,883, #5,341,047,  
#5,352,578, #5,352,389, #5,351,012, #5,374,898  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1-888-INTERSIL or 1-888-352-6832 | Intersil (and design) is a registered trademark of Intersil Americas Inc.  
Copyright Intersil Americas Inc. 1996, 2003, 2005. All Rights Reserved  
1
All other trademarks mentioned are the property of their respective owners.  
EL7154  
Nominal Operating Voltage Range  
PIN  
MIN  
MAX  
V
V
-3  
0
L
–V  
5
15  
15  
15  
15  
DD  
L
V –V  
2
H
L
V
V
–V  
-0.5  
5
DD  
DD  
H
2
EL7154  
Absolute Maximum Ratings (T = 25°C)  
A
Supply (V  
to V ; V –V , V to GND),  
Storage Temperature Range. . . . . . . . . . . . . . . . . .-65°C to +150°C  
Ambient Operating Temperature . . . . . . . . . . . . . . . .-40°C to +85°C  
Operating Junction Temperature. . . . . . . . . . . . . . . . . . . . . . . 125°C  
Power Dissipation  
DD  
L
H
L
H
V+ to V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16.5V  
H
V
to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -5V  
L
Input Pins. . . . . . . . . . . . . . . . . -0.3V below V to +0.3V above V  
L
DD  
Peak Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4A  
SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .570mW  
PDIP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1050mW  
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the  
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.  
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typical values are for information purposes only. Unless otherwise noted, all tests  
are at the specified temperature and are pulsed tests, therefore: T = T = T  
A
J
C
DC Electrical Specifications  
T
= 25°C, V  
= +12V, V = +12V, V = -3V, unless otherwise specified  
A
DD  
H
L
PARAMETER  
INPUT  
DESCRIPTION  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
V
Logic “1” Input Voltage  
2.4  
V
µA  
V
IH  
I
Logic “1” Input Current  
Logic “0” Input Voltage  
Logic “0” Input Current  
Input Hysteresis  
V
= V  
DD  
0.1  
10  
0.6  
10  
IH  
IH  
IL  
V
IL  
I
V
= 0V  
0.1  
0.3  
µA  
V
IL  
V
HVS  
OUTPUT  
R
R
Pull-Up Resistance  
I
I
= -100mA  
= +100mA  
/GND  
1.5  
2
4
4
OH  
OUT  
Pull-Down Resistance  
Output Leakage Current  
Peak Output Current  
OL  
OUT  
I
I
V
0.2  
10  
µA  
A
OUT  
PK  
DD  
Source  
Sink  
4.0  
4.0  
I
Continuous Output Current  
Source/Sink  
200  
4.5  
mA  
DC  
POWER SUPPLY  
I
Power Supply Current  
Operating Voltage  
Inputs = V  
DD  
1
2.5  
16  
10  
10  
mA  
V
S
V
S
I
I
Current to GND (Pin 4)  
1
1
µA  
µA  
G
Off Leakage at V  
Pin 8 = 0V  
H
H
AC Electrical Specifications  
T
= 25°C unless otherwise specified  
A
PARAMETER  
DESCRIPTION  
= V = 12V; V = -3V)  
TEST CONDITIONS  
MIN  
TYP  
MAX  
25  
UNITS  
ns  
SWITCHING CHARACTERISTICS (V  
DD  
H
L
t
Rise Time  
C
C
C
C
C
C
= 100pF  
4
R
L
L
L
L
L
L
= 2000pF  
= 100pF  
20  
4
t
Fall Time  
25  
ns  
F
= 2000pF  
= 2000pF  
= 2000pF  
20  
20  
10  
t
t
t
t
Turn-Off Delay Time  
Turn-On Delay Time  
3-State Delay  
25  
25  
25  
25  
ns  
ns  
ns  
ns  
D-1  
D-2  
D-1  
D-2  
3-State Delay  
3
EL7154  
Timing Table  
Standard Tes t Configuration  
4
EL7154  
Typical Performance Curves  
Switch Threshold vs  
Supply Voltage  
Max Power/Derating Curves  
Peak Drive vs Supply Voltage  
Input Current vs Voltage  
Quiescent Supply Current  
“ON” Resistance vs Supply Voltage  
Average Supply Current vs  
Voltage and Frequency  
Rise/Fall Time vs Load  
5
EL7154  
Typical Applications  
Adjustable Amplitude Pulse Generator  
Pin Driver  
IGBT Driver (with Negative Swing)  
PMOS Follower  
Resonant Gate Driver  
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.  
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality  
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without  
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and  
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result  
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.  
For information regarding Intersil Corporation and its products, see www.intersil.com  
6
配单直通车
EL7154CSZ-T7产品参数
型号:EL7154CSZ-T7
Brand Name:Intersil
生命周期:Unknown
IHS 制造商:INTERSIL CORP
零件包装代码:SOIC
包装说明:SOP, SOP8,.25
针数:8
Reach Compliance Code:compliant
ECCN代码:EAR99
HTS代码:8542.39.00.01
Factory Lead Time:5 weeks
风险等级:5.07
接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 代码:R-PDSO-G8
JESD-609代码:e3
长度:4.9022 mm
湿度敏感等级:3
标称负供电电压:-3 V
功能数量:1
端子数量:8
最高工作温度:85 °C
最低工作温度:-40 °C
输出电流流向:SOURCE AND SINK
标称输出峰值电流:4 A
封装主体材料:PLASTIC/EPOXY
封装代码:SOP
封装等效代码:SOP8,.25
封装形状:RECTANGULAR
封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260
电源:12 V
认证状态:Not Qualified
座面最大高度:1.7272 mm
子类别:MOSFET Drivers
最大供电电压:16 V
最小供电电压:4.5 V
标称供电电压:12 V
电源电压1-Nom:12 V
表面贴装:YES
温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING
端子节距:1.27 mm
端子位置:DUAL
处于峰值回流温度下的最长时间:40
断开时间:0.025 µs
接通时间:0.025 µs
宽度:3.9116 mm
Base Number Matches:1
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