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产品型号ESM6045AV的概述

ESM6045AV芯片概述 ESM6045AV是一款高性能的电源管理IC，广泛应用于各种电子设备中。该芯片主要用于DC-DC转换、电池充电管理和电源分配等功能，满足下游设备对电源的多样化需求。随着电子产品小型化与功能多样化的趋势，ESM6045AV凭借其出色的技术参数与灵活的应用场景，成为现代电子设计领域的重要组成部分。详细参数 ESM6045AV的关键参数如下： - 输入电压范围（VIN）：通常范围为4.5V至28V，支持多种电源输入。 - 输出电压（VOUT）：可调输出电压范围为0.8V至24V，具有广泛的电压适应性。 - 输入电流（IIN）：额定输入电流为3A，适合需要中等电流供给的应用。 - 工作温度范围：-40°C至125°C，保证在严苛环境下稳定工作。 - 开关频率：典型开关频率为300kHz至1MHz，提供良好的效率。 - 效率：在满载条件下可达到90%以上，提供高效的...

产品型号ESM6045AV的Datasheet PDF文件预览

ESM6045AV

NPN DARLINGTON POWER MODULE

■

HIGH CURRENT POWER BIPOLAR MODULE

VERY LOW R_thJUNCTION CASE

SPECIFIED ACCIDENTAL OVERLOAD

AREAS

■

ISOLATED CASE (2500V RMS)

EASY TO MOUNT

LOW INTERNAL PARASITIC INDUCTANCE

INDUSTRIAL APPLICATIONS:

■

MOTOR CONTROL

SMPS & UPS

WELDING EQUIPMENT

ISOTOP

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Collector-Emitter Voltage (V_BE= -5 V)

Value

1000

450

Unit

V_CEV

V_CEO(sus)Collector-Emitter Voltage (I_B= 0)

V_EBO

I_C

I_CM

I_B

Emitter-Base Voltage (I_C= 0)

Collector Current

Collector Peak Current (t_p= 10 ms)

Base Current

108

I_BM

P_tot

T_stg

T_j

Base Peak Current (t_p= 10 ms)

Total Dissipation at T_c= 25 C

250

^oC

Storage Temperature

-55 to 150

150

Max. Operating Junction Temperature

Insulation Withstand Voltage (AC-RMS)

V_ISO

2500

1/7

September1997

ESM6045AV

THERMAL DATA

R_thj-caseThermal Resistance Junction-case

Max

0.5

^oC/W

R_thc-h

Thermal Resistance Case-heatsink With Conductive

Grease Applied

0.05

ELECTRICAL CHARACTERISTICS (T_case= 25 ^oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

I_CER

I_CEV

I_EBO

Collector Cut-off

Current (R_BE= 5 Ω)

V_CE= V_CEV

1.5

T_j= 100 C

Collector Cut-off

Current (V_BE= -5)

V_CE= V_CEV

T_j= 100 C

Emitter Cut-off Current V_EB= 5 V

(I_C= 0)

V_CEO(SUS)* Collector-Emitter

Sustaining Voltage

I_C= 0.2 A

L = 25 mH

450

_clamp= 450 V

h_FE

DC Current Gain

I_C= 60 A V_CE= 5 V

150

V_CE(sat)

Collector-Emitter

Saturation Voltage

I_C= 50 A I_B= 1 A

I_C= 60 A I_B= 2.4 A

1.2

1.6

1.3

T_j= 100 C

I_C= 60 A I_B= 2.4 A T_j= 100 C

1.55

V_BE(sat)

di_C/dt

Base-Emitter

Saturation Voltage

I_C= 60 A I_B= 2.4 A

I_C= 60 A I_B= 2.4 A T_j= 100 C

2.1

2.15

Rate of Rise of

On-state Collector

V_CC= 300 V R_C= 0

I_B1= 3.6 A T_j= 100 C

t_p= 3 µs

450

500

A/µs

V_CE(3 µs)•• Collector-Emitter

V_CC= 300 V R_C= 5 Ω

I_B1= 3.6 A T_j= 100 C

Dynamic Voltage

V_CE(5 µs)•• Collector-Emitter

V_CC= 300 V R_C= 5 Ω

2.5

Dynamic Voltage

I_B1= 3.6 A T_j= 100 C

t_s

t_f

t_c

Storage Time

Fall Time

Cross-over Time

I_C= 60 A V_CC= 50 V

V_BB= -5 V R_BB= 0.3 Ω

V_clamp= 450 V I_B1= 2.4 A

L = 0.04 mH T_j= 100 C

4.6

0.4

1.2

0.6

µs

V_CEW

Maximum Collector

Emitter Voltage

Without Snubber

I_CWoff= 72 A I_B1= 2.4 A

V_BB= -5 V V_CC= 50 V

L = 35 µH R_BB= 0.3 Ω

T_j= 125 ^oC

450

Pulsed:Pulse duration = 300 µs, duty cycle 1.5 %

# See test circuits in databook introduction

2/7

ESM6045AV

Safe Operating Areas

Thermal Impedance

Derating Curve

Collector-emitter Voltage Versus

base-emitter Resistance

Collector Emitter Saturation Voltage

Base-Emitter Saturation Voltage

3/7

ESM6045AV

Reverse Biased SOA

Foward Biased SOA

Reverse Biased AOA

Forward Biased AOA

Switching Times Inductive Load

Switching Times Inductive Load Versus

Temperature

4/7

ESM6045AV

Dc Current Gain

Turn-on Switching Test Circuit

Turn-on Switching Waveforms

Turn-off Switching Test Circuit

Turn-off Switching Waveforms

5/7

ESM6045AV

ISOTOP MECHANICAL DATA

inch

TYP.

DIM.

MIN.

11.8

8.9

TYP.

MAX.

12.2

9.1

MIN.

0.466

0.350

0.076

0.029

0.496

0.990

1.240

0.157

0.161

0.586

1.185

1.488

0.157

0.307

MAX.

0.480

0.358

0.080

0.033

0.503

1.003

1.248

1.95

0.75

12.6

25.15

31.5

2.05

0.85

12.8

25.5

31.7

4.1

4.3

0.169

0.594

1.193

1.503

14.9

30.1

37.8

15.1

30.3

38.2

7.8

8.2

0.322

6/7

ESM6045AV

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the

consequencesof use of such informationnor for any infringementof patents or other rightsof third parties which may results from its use. No

license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned

in thispublication are subject to change without notice. This publication supersedes and replacesall informationpreviously supplied.

SGS-THOMSON Microelectronicsproducts arenot authorized for useas critical componentsin life support devices or systems withoutexpress

written approval of SGS-THOMSON Microelectonics.

SGS-THOMSON MicroelectronicsGROUP OF COMPANIES

Australia - Brazil - Canada - China - France- Germany - Hong Kong - Italy - Japan- Korea - Malaysia - Malta - Morocco - The Netherlands -

Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - UnitedKingdom - U.S.A

. . .

7/7

型号:	ESM6045AV
生命周期：	Transferred
IHS 制造商：	NORTH AMERICAN PHILIPS DISCRETE PRODUCTS DIV
包装说明：	,
Reach Compliance Code：	unknown
风险等级：	5.75
Is Samacsys：	N
最大集电极电流 (IC)：	84 A
最大降落时间（tf）：	500 ns
元件数量：	1
最高工作温度：	150 °C
最大功率耗散 (Abs)：	250 W
最大上升时间（tr）：	5500 ns
子类别：	BIP General Purpose Power
VCEsat-Max：	2 V
Base Number Matches：	1

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