FCH041N60F原理图各脚功能电路原理芯片引脚定义引脚图及功能-中国IC网-芯三七

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产品型号FCH041N60F的概述

FCH041N60F概述 FCH041N60F是一款高性能的N沟道MOSFET，专为高效能的电力电子应用而设计。其主要功能是作为开关元件，在电源管理和高频转换电路中起到关键作用。由于其良好的导通性能和高耐压特性，FCH041N60F广泛应用于各种工业和消费电子设备中。此高压MOSFET的设计特点和电气性能使其成为电源适配器、DC-DC转换器、逆变器及其他高频开关应用的理想选择。FCH041N60F不仅在提高电源效率方面表现优异，而且其热管理特性也使其能够在严苛的工作环境下稳定工作，从而满足现代电子设备对性能和可靠性的要求。详细参数 FCH041N60F的主要电气参数如下： - 最大漏源电压 (V_DS): 600V - 最大连续漏电流 (I_D): 41A - 脉冲漏电流 (I_DM): 100A - 栅源电压 (V_GS): ±20V - 导通电阻 (R_DS(on)): 0.1...

产品型号FCH041N60F的Datasheet PDF文件预览

March 2013

SuperFET II

FCH041N60F

600V N-Channel MOSFET, FRFET

Features

Description

•

R_DS(on)= 36mΩ (Typ)

SuperFET II is, Farichild’s proprietary, new generation of high

voltage MOSFET family that is utilizing an advanced charge

balance mechanism for outstanding low on-resistance and lower

gate charge performance.

Ultra low gate charge (Typ. Q_g=277nC)

Low effective output capacitance

100% avalanche tested

This advanced technology has been tailored to minimize

conduction loss, provide superior switching performance, and

withstand extreme dv/dt rate and higher avalanche energy.

RoHS Compliant

Consequently, SuperFET II is very suitable for various AC/DC

power conversion in switching mode operation for system

miniaturization and higher efficiency.

TO-247

MOSFET Maximum Ratings T_C= 25^oC unless otherwise noted*

Symbol

V_DSS

Parameter

FCH041N60F

Units

Drain to Source Voltage

Gate to Source Voltage

600

±20

-DC

V_GSS

I_D

-AC

(f>1Hz)

-Continuous (T_C= 25^oC)

-Continuous (T_C= 100^oC)

- Pulsed

Drain Current

48.1

228

I_DM

E_AS

I_AR

Drain Current

(Note 1)

(Note 2)

(Note 1)

Single Pulsed Avalanche Energy

Avalanche Current

2025

E_AR

Repetitive Avalanche Energy

MOSFET dv/dt

5.95

100

dv/dt

P_D

V/ns

Peak Diode Recovery dv/dt

(Note 3)

(T_C= 25^oC)

- Derate above 25^oC

595

W/^oC

^oC

Power Dissipation

4.76

-55 to +150

T_J, T_STG

T_L

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

^oC

Thermal Characteristics

Symbol

Parameter

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Units

FCH041N60F

R_θJC

R_θJA

0.21

^oC/W

FCH041N60F Rev. C3

www.fairchildsemi.com

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FCH041N60F

TO-247

Electrical Characteristics ^T_C= 25^oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Off Characteristics

_D= 10mA, V_GS= 0V, T_J= 25^oC

600

BV_DSS

Drain to Source Breakdown Voltage

I_D= 10mA, V_GS= 0V, T_J= 150^oC

_D= 10mA, Referenced to 25^oC

_DS= 480V, V_GS= 0V

650

ΔBV_DSS

ΔT_J

Breakdown Voltage Temperature

Coefficient

0.67

V/^oC

I_DSS

I_GSS

Zero Gate Voltage Drain Current

Gate to Body Leakage Current

μA

V_DS= 480V, T_C= 125^oC

V_GS= ±20V, V_DS= 0V

±100

On Characteristics

V_GS(th)

R_DS(on)

g_FS

Gate Threshold Voltage

V_GS= V_DS, I_D= 250μA

V_GS= 10V, I_D= 38A

V_DS= 20V, I_D= 38A

mΩ

Static Drain to Source On Resistance

Forward Transconductance

(Note 4)

64.5

Dynamic Characteristics

C_iss

Input Capacitance

10800

324

4.5

14365

V_DS= 100V, V_GS= 0V

f = 1MHz

C_oss

Output Capacitance

430

C_rss

Reverse Transfer Capacitance

Output Capacitance

C_oss

V_DS= 380V, V_GS= 0V, f = 1.0MHz

V_DS= 0V to 480V, V_GS= 0V

185

748

277

65.3

C_osseff.

Q_g(tot)

Q_gs

Effective Output Capacitance

Total Gate Charge at 10V

Gate to Source Gate Charge

360

_DS= 380V, I_D= 38A

_GS= 10V

Q_gd

Gate to Drain “Miller” Charge

Equivalent Series Resistance

116

(Note 4)

ESR

f=1MHz

Ω

Switching Characteristics

t_d(on)

t_r

t_d(off)

t_f

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

136

142

498

116

V_DD= 380V, I_D= 38A

_GEN= 4.7Ω

244

(Note 4)

Drain-Source Diode Characteristics

I_S

Maximum Continuous Drain to Source Diode Forward Current

Maximum Pulsed Drain to Source Diode Forward Current

231

1.2

I_SM

V_SD

t_rr

Drain to Source Diode Forward Voltage

Reverse Recovery Time

V_GS= 0V, I_SD= 38A

190

1490

_GS= 0V, I_SD= 38A

dI_F/dt = 100A/μs

(Note 4)

Q_rr

Reverse Recovery Charge

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. I = 15A, R = 25Ω, Starting T = 25°C

3. I ≤ 38A, di/dt ≤ 200A/μs, V ≤ 380V, Starting T = 25°C

4. Essentially Independent of Operating Temperature Typical Characteristics

www.fairchildsemi.com

FCH041N60F Rev. C3

Typical Performance Characteristics

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

250

1000

V_GS= 15.0V

*Notes:

1. V_DS= 20V

100

10.0V

8.0V

7.0V

6.5V

6.0V

5.5V

2. 250μs Pulse Test

100

5.0V

25^oC

-55^oC

150^oC

*Notes:

1. 250μs Pulse Test

2. T_C= 25^oC

0.1

0.05 0.1

10 20

V_GS, Gate-Source Voltage[V]

V_DS, Drain-Source Voltage[V]

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

250

100

150^oC

25^oC

V_GS= 10V

V_GS= 20V

*Notes:

1. V_GS= 0V

*Note: T_C= 25^oC

150 200 250

I_D, Drain Current [A]

2. 250μs Pulse Test

0.1

0.4

0.8

1.2

1.6

100

V_SD, Body Diode Forward Voltage [V]

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

10⁵

C_iss

V_DS= 120V

10⁴

_DS= 300V

_DS= 480V

= C + C (C = shorted)

gs gd ds

iss

= C + C

ds gd

= C

os s

rss

10³

10²

10¹

10⁰

C_oss

C_rss

*Note:

1. V_GS= 0V

2. f = 1MHz

*Note: I_D= 38A

200 250 300

100

200

300

400

500 600

100

150

V_DS, Drain-SourceVoltage [V]

Q_g, Total Gate Charge [nC]

www.fairchildsemi.com

FCH041N60F Rev. C3

Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation

Figure 8. On-Resistance Variation

vs. Temperature

2.5

1.15

1.10

1.05

1.00

2.0

1.5

1.0

0.95

0.90

*Notes:

1. V_GS= 0V

*Notes:

1. V_GS= 10V

2. I_D= 10mA

2. I_D= 38A

0.5

-80

-40

120 160

-80

-40

120

160

T_J, Junction Temperature [^oC]

Figure 9. Maximum Safe Operating Area

vs. Case Temperature

Figure 10. Maximum Drain Current

500

100

10μs

100μs

1ms

V_GS= 10V

10ms

Operation in This Area

is Limited by R _DS(on)

*Notes:

1. T_C= 25^oC

2. T_J= 150^oC

_θJC= 0.21^oC/W

3. Single Pulse

0.1

100

125

150

100

1000

T_C, Case Temperature [^oC]

V_DS, Drain-Source Voltage [V]

Figure 11. Eoss vs. Drain to Source Voltage

100

200

300

400

500

600

V_DS, Drain to Source Voltage [V]

www.fairchildsemi.com

FCH041N60F Rev. C3

Typical Performance Characteristics (Continued)

Figure 12. Transient Thermal Response Curve

0.3

0.1

0.5

0.2

P_DM

t₁

0.1

t₂

0.05

0.02

*Notes:

1. Z_θJC(t) = 0.21^oC/W Max.

2. Duty Factor, D= t₁/t₂

3. T_JM- T_C= P_DM* Z_θJC(t)

0.01

Single pulse

0.01

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

Rectangular Pulse Duration [sec]

www.fairchildsemi.com

FCH041N60F Rev. C3

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

www.fairchildsemi.com

FCH041N60F Rev. C3

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

V_DS

I _SD

Driver

R_G

Same Type

as DUT

V_DD

V_GS

• dv/dt controlled by R_G

• I_SDcontrolled by pulse period

Gate Pulse Width

--------------------------

V_GS

D =

Gate Pulse Period

10V

( Driver )

I_FM, Body Diode Forward Current

I _SD

di/dt

( DUT )

I_RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V_SD

V_DS

( DUT )

V_DD

Body Diode

Forward Voltage Drop

www.fairchildsemi.com

FCH041N60F Rev. C3

Mechanical Dimensions

TO-247

www.fairchildsemi.com

FCH041N60F Rev. C3

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not

intended to be an exhaustive list of all such trademarks.

2Cool™

F-PFS™

PowerTrench^®

PowerXS™

The Power Franchise^®

FRFET^®

AccuPower™

AX-CAP™*

Global Power Resource^SM

Green Bridge™

Green FPS™

Green FPS™ e-Series™

Gmax™

Programmable Active Droop™

BitSiC^®

QFET^®

TinyBoost™

TinyBuck™

Build it Now™

CorePLUS™

CorePOWER™

CROSSVOLT™

CTL™

QS™

Quiet Series™

RapidConfigure™

™

TinyCalc™

TinyLogic^®

GTO™

IntelliMAX™

TINYOPTO™

TinyPower™

TinyPWM™

TinyWire™

Current Transfer Logic™

DEUXPEED^®

Dual Cool™

EcoSPARK^®

EfficentMax™

ESBC™

ISOPLANAR™

Marking Small Speakers Sound Louder SignalWise™

and Better™

MegaBuck™

MICROCOUPLER™

MicroFET™

Saving our world, 1mW/W/kW at a time™

SmartMax™

SMART START™

Solutions for Your Success™

SPM^®

TranSiC^®

TriFault Detect™

TRUECURRENT^®*

μSerDes™

MicroPak™

STEALTH™

MicroPak2™

MillerDrive™

MotionMax™

Motion-SPM™

mWSaver™

SuperFET^®

Fairchild^®

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SupreMOS^®

SyncFET™

UHC^®

Ultra FRFET™

UniFET™

VCX™

VisualMax™

VoltagePlus™

XS™

Fairchild Semiconductor^®

FACT Quiet Series™

FACT^®

FAST^®

OptoHiT™

OPTOLOGIC^®

OPTOPLANAR^®

Sync-Lock™

®*

FastvCore™

FETBench™

FlashWriter^®

FPS™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY

PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY

THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE

EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used here in:

1. Life support devices or systems are devices or systems which, (a) are

intended for surgical implant into the body or (b) support or sustain life,

and (c) whose failure to perform when properly used in accordance with

instructions for use provided in the labeling, can be reasonably

expected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, or

system whose failure to perform can be reasonably expected to cause

the failure of the life support device or system, or to affect its safety or

effectiveness.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,

www.Fairchildsemi.com, under Sales Support.

Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their

parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed

application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the

proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild

Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild

Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of

up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and

warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is

committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Datasheet contains the design specifications for product development. Specifications

may change in any manner without notice.

Advance Information

Formative / In Design

Datasheet contains preliminary data; supplementary data will be published at a later

date. Fairchild Semiconductor reserves the right to make changes at any time without

notice to improve design.

Preliminary

First Production

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

make changes at any time without notice to improve the design.

No Identification Needed

Obsolete

Full Production

Datasheet contains specifications on a product that is discontinued by Fairchild

Semiconductor. The datasheet is for reference information only.

Not In Production

Rev. I61

www.fairchildsemi.com

FCH041N60F Rev. C3

FCH041N60F相关文章

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FCH041N60F产品参数

型号:	FCH041N60F
Brand Name：	Fairchild Semiconductor
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Transferred
IHS 制造商：	FAIRCHILD SEMICONDUCTOR CORP
零件包装代码：	TO-247
包装说明：	ROHS COMPLIANT, PLASTIC PACKAGE-3
针数：	3
制造商包装代码：	TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB
Reach Compliance Code：	not_compliant
ECCN代码：	EAR99
HTS代码：	8541.29.00.95
风险等级：	4.47
雪崩能效等级（Eas）：	2025 mJ
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	600 V
最大漏极电流 (Abs) (ID)：	76 A
最大漏极电流 (ID)：	76 A
最大漏源导通电阻：	0.041 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-247AB
JESD-30 代码：	R-PSFM-T3
JESD-609代码：	e3
元件数量：	1
端子数量：	3
工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	595 W
最大脉冲漏极电流 (IDM)：	228 A
子类别：	FET General Purpose Power
表面贴装：	NO
端子面层：	Matte Tin (Sn)
端子形式：	THROUGH-HOLE
端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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产品型号FCH041N60F的概述

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