FCP11N60各脚功能电路原理芯片引脚定义引脚图及功能IC贸易商-中国IC网-芯三七

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产品型号FCP11N60的概述

芯片FCP11N60的概述 FCP11N60是一款广泛应用于功率电子设备的晶体管芯片，属于N沟道增强型MOSFET（场效应晶体管），其工作电压高达600V，适用于多种高压应用场合。该芯片由于其低导通电阻、高速开关及良好的热管理能力，被广泛应用于开关电源、逆变器、电动机驱动以及其他高频和高压应用中。芯片FCP11N60的详细参数 FCP11N60MOSFET拥有一系列值得关注的电气特性。以下是其主要参数： - 最大漏极-源极电压（V_DS）: 600V - 最大栅极-源极电压（V_GS）: ±20V - 漏极电流（I_D）: 11A - 脉冲漏极电流（I_DM）: 32A - 通态电阻（R_DS(on)）: 0.75Ω（在V_GS=10V时） - 工作温度范围: -55℃至+150℃ - 电容（Ciss）: 700pF（@V_DS=0V） - 开关速度: 典型的开关时间和关断时间小于5...

产品型号FCP11N60的Datasheet PDF文件预览

SuperFET

FCP11N60/FCPF11N60

General Description

Features

SuperFET is a new generation of high voltage MOSFETs

•

650V @T = 150°C

Typ. Rds(on)=0.32Ω

Ultra low gate charge (typ. Qg=40nC)

Low effective output capacitance (typ. Coss.eff=95pF)

100% avalanche tested

from Fairchild with outstanding low on-resistance and low

gate charge performance, a result of proprietary technology

utilizing advanced charge balance mechanisms.

This advanced technology has been tailored to minimize

conduction loss, provide superior switching performance,

and withstand extreme dv/dt rate and higher avalanche

energy. Consequently, SuperFET is very suitable for

various AC/DC power conversion in switching mode

operation for system miniaturization and higher efficiency.

●

◀

▲

●

TO-220

FCP Series

TO-220F

FCPF Series

G D

D S

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

FCP11N60

FCPF11N60

Units

- Continuous (T = 25°C)

Drain Current

11*

- Continuous (T = 100°C)

(Note 1)

Drain Current

- Pulsed

33*

Gate-Source Voltage

± 30

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

340

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

12.5

4.5

V/ns

dv/dt

Power Dissipation (T = 25°C)

125

1.0

- Derate above 25°C

Operating and Storage Temperature Range

0.29

W/°C

°C

T , T

-55 to +150

STG

Maximum lead temperature for soldering purposes,

300

°C

1/8" from case for 5 seconds

* Drain current limited by maximum junction termperature

Thermal Characteristics

Symbol

Parameter

FCP11N60

1.0

FCPF11N60

Units

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink

3.5

θJC

0.5

θCS

θJA

Thermal Resistance, Junction-to-Ambient

62.5

Rev. B, March 2004

Electrical Characteristics

T = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max Units

Off Characteristics

= 0 V, I = 250 µA, T = 25°C

D J

600

Drain-Source Breakdown Voltage

DSS

= 0 V, I = 250 µA, T = 150°C

650

∆BV

Breakdown Voltage Temperature Coef-

ficient

DSS

= 250 µA, Referenced to 25°C

0.6

V/°C

∆T

Drain-Source Avalanche Breakdown

Voltage

= 0 V, I = 11 A

700

= 600 V, V = 0 V

µA

DSS

Zero Gate Voltage Drain Current

= 480 V, T = 125°C

= 30 V, V = 0 V

Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

100

-100

GSSF

= -30 V, V = 0 V

GSSR

On Characteristics

= V , I = 250 µA

Gate Threshold Voltage

3.0

5.0

0.38

Ω

GS(th)

Static Drain-Source

On-Resistance

DS(on)

= 10 V, I = 5.5 A

0.32

9.7

= 40 V, I = 5.5 A

(Note 4)

Forward Transconductance

Dynamic Characteristics

Input Capacitance

1148 1490

iss

= 25 V, V = 0 V,

Output Capacitance

671

870

oss

rss

f = 1.0 MHz

Reverse Transfer Capacitance

= 480 V, V = 0 V,

Output Capacitance

oss

f = 1.0 MHz

eff.

= 0V to 480 V, V = 0 V

Effective Output Capacitance

Switching Characteristics

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

205

250

120

d(on)

= 300 V, I = 11 A,

= 25 Ω

119

d(off)

(Note 4, 5)

= 480 V, I = 11 A,

7.2

= 10 V

Drain-Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain-Source Diode Forward Current

1.4

Maximum Pulsed Drain-Source Diode Forward Current

= 0 V, I = 11 A

Drain-Source Diode Forward Voltage

Reverse Recovery Time

= 0 V, I = 11 A,

390

5.7

µC

dI / dt = 100 A/µs

(Note 4)

Reverse Recovery Charge

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. I = 5.5A, V = 50V, R = 25 Ω, Starting T = 25°C

3. I ≤ 11A, di/dt ≤ 200A/µs, V ≤ BV

Starting T = 25°C

DSS,

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Rev. B, March 2004

Typical Characteristics

10²

V_GS

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

10¹

10⁰

Bottom : 5.5 V

150^oC

25^oC

-55^oC

10⁰

* Notes :

* Note

1. V_DS= 40V

2. 250 µs Pulse Test

1. 250 µs Pulse Test

2. T_C= 25^oC

-1

10⁰

10¹

V_DS, Drain-Source Voltage [V]

V_GS, Gate-Source Voltage [V]

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

1.0

0.8

0.6

0.4

0.2

0.0

10¹

V_GS= 10V

V_GS= 20V

10⁰

150 ^oC

25 ^oC

* Notes :

1. V_GS= 0V

2. 250 µs Pulse Test

* Note : T_J= 25^oC

-1

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

I_D, Drain Current [A]

V_SD, Source-Drain Voltage [V]

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

6000

_iss= C_gs+ C_gd(C_ds= shorted)

V_DS= 100V

V_DS= 250V

C_oss= C_ds+ C_gd

C_rss= C_gd

5000

4000

3000

2000

1000

V_DS= 400V

C_oss

* Notes :

1. V_GS= 0 V

2. f = 1 MHz

iss

C_rss

* Note : I_D= 11A

10^-1

10⁰

10¹

Q_G, Total Gate Charge [nC]

V_DS, Drain-Source Voltage [V]

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

Rev. B, March 2004

Typical Characteristics (Continued)

3.0

2.5

2.0

1.5

1.0

0.5

0.0

1.2

1.1

1.0

* Notes :

1. V_GS= 0 V

2. I_D= 250 µA

0.9

* Notes :

1. V_GS= 10 V

2. I_D= 5.5 A

0.8

-100

-50

100

150

200

-100

-50

100

150

200

T_J, Junction Temperature [^oC]

Figure 7. Breakdown Voltage Variation

vs. Temperature

Figure 8. On-Resistance Variation

vs. Temperature

10²

10¹

10⁰

10²

Operation in This Area

is Limited by R _DS(on)

Operation in This Area

is Limited by R _DS(on)

100 us

1 ms

10¹

10⁰

1 ms

10 ms

100 ms

* Notes :

-1

1. T_C= 25 ^o

-1

1. T_C= 25 ^o

2. T_J= 150 ^o

3. Single Pulse

-2

10⁰

10¹

10²

10³

10⁰

10¹

10²

10³

V_DS, Drain-Source Voltage [V]

Figure 9-1. Maximum Safe Operating Area

for FCP11N60

Figure 9-2. Maximum Safe Operating Area

for FCPF11N60

12.5

10.0

7.5

5.0

2.5

0.0

100

125

150

T_C, Case Temperature [^oC]

Figure 10. Maximum Drain Current

vs. Case Temperature

Rev. B, March 2004

Typical Characteristics (Continued)

10⁰

D =0.5

0.2

N otes

1. _{θ JC}(t)

2. D uty F actor, D =t₁/t₂

1.0 ^oC /W M ax.

0.1

10^-1

0.05

3. T_JM

T_C

P _{D M}* Z_{θ JC}(t)

0.02

0.01

P_DM

t₁

t₂

single pulse

10^-2

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

10¹

t₁, S quare W ave P ulse D uration [sec]

Figure 11-1. Transient Thermal Response Curve for FCP11N60

D=0.5

10⁰

0.2

0.1

N otes

1. _{θ JC}(t)

2. D uty Factor, D =t₁/t₂

3.5 ^oC /W M ax.

0.05

3. T_JM

T_C

P_{D M}* Z_{θ JC}(t)

10^-1

0.02

0.01

P_DM

t₁

t₂

single pulse

10^-2

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

10¹

t₁, Square W ave Pulse Duration [sec]

Figure 11-2. Transient Thermal Response Curve for FCPF11N60

Rev. B, March 2004

Gate Charge Test Circuit & Waveform

V_GS

Same Type

50KΩ

as DUT

Q_g

12V

200nF

10V

300nF

V_DS

V_GS

Q_gs

Q_gd

DUT

3mA

Charge

Resistive Switching Test Circuit & Waveforms

R_L

V_DS

90%

V_DS

V_DD

V_GS

R_G

10%

V_GS

DUT

10V

t_d(on)

t_r

t_d(off)

t_f

t _on

t _off

Unclamped Inductive Switching Test Circuit & Waveforms

BV_DSS

--------------------

BV_DSS- V_DD

----

E_AS

L I_AS

V_DS

I _D

BV_DSS

I_AS

R_G

V_DD

I_D(t)

V_DD

V_DS(t)

DUT

10V

t _p

Time

Rev. B, March 2004

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

V_DS

I _SD

Driver

R_G

Same Type

as DUT

V_DD

V_GS

• dv/dt controlled by R_G

• I_SDcontrolled by pulse period

Gate Pulse Width

--------------------------

V_GS

D =

Gate Pulse Period

10V

( Driver )

I_FM, Body Diode Forward Current

I _SD

di/dt

( DUT )

I_RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V_SD

V_DS

( DUT )

V_DD

Body Diode

Forward Voltage Drop

Rev. B, March 2004

Package Dimensions

TO-220

4.50 ±0.20

9.90 ±0.20

(8.70)

+0.10

–0.05

1.30

ø3.60 ±0.10

1.27 ±0.10

1.52 ±0.10

0.80 ±0.10

+0.10

–0.05

0.50

2.40 ±0.20

2.54TYP

[2.54 ±0.20]

10.00 ±0.20

Dimensions in Millimeters

Rev. B, March 2004

Package Dimensions

TO-220F

2.54 ±0.20

10.16 ±0.20

ø3.18 ±0.10

(7.00)

(0.70)

(1.00x45°)

MAX1.47

0.80 ±0.10

0.35 ±0.10

+0.10

–0.05

0.50

2.76 ±0.20

2.54TYP

[2.54 ±0.20]

9.40 ±0.20

Dimensions in Millimeters

Rev. B, March 2004

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

ACEx™

POP™

Stealth™

ISOPLANAR™

LittleFET™

MICROCOUPLER™

MicroFET™

MicroPak™

MICROWIRE™

MSX™

MSXPro™

OCX™

OCXPro™

FACT Quiet Series™

FAST

FASTr™

FPS™

FRFET™

ActiveArray™

Bottomless™

CoolFET™

CROSSVOLT™

DOME™

EcoSPARK™

E²CMOS^TM

EnSigna^TM

FACT™

Power247™

PowerSaver™

PowerTrench

QFET

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

QS™

GlobalOptoisolator™

GTO™

QT Optoelectronics™ TinyLogic

Quiet Series™

RapidConfigure™

RapidConnect™

TINYOPTO™

TruTranslation™

UHC™

HiSeC™

I²C™

ImpliedDisconnect™

SILENT SWITCHER UltraFET

OPTOLOGIC

OPTOPLANAR™

PACMAN™

Across the board. Around the world.™

The Power Franchise™

ProgrammableActive Droop™

SMART START™

SPM™

VCX™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVESTHE RIGHTTO MAKE CHANGES WITHOUTFURTHER NOTICETOANY

PRODUCTS HEREINTO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOTASSUMEANYLIABILITY

ARISING OUTOFTHEAPPLICATION OR USE OFANYPRODUCTOR CIRCUITDESCRIBED HEREIN; NEITHER DOES IT

CONVEYANYLICENSE UNDER ITS PATENTRIGHTS, NORTHE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or

In Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. I8

FCP11N60相关文章

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FCP11N60产品参数

型号:	FCP11N60
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Active
零件包装代码：	TO-220AB
包装说明：	ROHS COMPLIANT PACKAGE-3
针数：	3
Reach Compliance Code：	unknown
风险等级：	5.2
雪崩能效等级（Eas）：	340 mJ
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	600 V
最大漏极电流 (ID)：	11 A
最大漏源导通电阻：	0.38 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-220AB
JESD-30 代码：	R-PSFM-T3
JESD-609代码：	e3
湿度敏感等级：	NOT APPLICABLE
元件数量：	1
端子数量：	3
工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL
最大脉冲漏极电流 (IDM)：	33 A
认证状态：	COMMERCIAL
表面贴装：	NO
端子面层：	MATTE TIN
端子形式：	THROUGH-HOLE
端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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