Description
Mechanical Dimensions
TO-92
1
1. CATHODE
2. GATE
3. ANODE
2
3
.Sensitive gate trigger current.
.Driven directly with IC and MOS device.
.Feature proprietary, void-free glass passivate
chips.
.Available in voltage ratings from 400 to 600
volts. (VDRM and VRRM)
.Designed for high volume, line-powered
control application in relay lamp drivers, small
motor controls, gate drivers for large thyristors.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Ta=25℃)
DEVICE
NUMBER
PARAMETERS
SYMBOL
RATING
UNITS
VOLT
Repetitive Peak Off-State Voltage and
Repetitive Peak Reverse Voltage
* VDRM
* VRRM
FCR0840
FCR0860
400
600
RMS On-State Current at Ta=57℃ and Conduction
Angle of 180º
IT(RMS)
ITSM
0.8
8
AMP
AMP
Peak Surge (Non-Repetitive)On-State Current,
½
Cycle ,at 50Hz or 60Hz
Peak Gate-Trigger Current for 3µ sec , Max
Peak Gate-Power Dissipation at IGT≦IGTM
Average Gate-Power Dissipation
IGTM
PGM
0.8
0.1
AMP
WATT
WATT
PG(AV)
0.01
V
Peak gate reverse voltage
10
VRGM
Peak Off-State Current, Ta=25℃ (1)
VDRM & VRRM=Max. Rating Ta=125℃ (2)
* IDRM
* IRRM
(1) 10
(2) 100
µA
MAX
Maximum On-State Voltage. (Peak)
At Tc=25℃ and IT =Rated Amps
VOLT
MAX
VTM
* IH
1.7
5
mA
MAX
DC Holding Current
Critical Rate-Of-Rise of off-State Voltage
Gate Open,Ta=110℃
* Critical
dv/dt
V/µ sec
5
DC Gate –Trigger Current for Anode Voltage=7VDC,
RL=100Ω
µA
MAX
IGT
100
DC Gate –Trigger Voltage for Anode Voltage=7VDC,
RL=100Ω
VOLT
MAX
VGT
Tgt
0.8
2.2
µ sec
Gate-Controlled Turn-on Time tD+tR IGT=10mA
Thermal Resistance , Junction-to-Case
℃/WATT
RθJ-C
75
TYP
℃
℃
Storage Temperature range
Tstg
-40 to + 150
-40 to + 110
Operating Temperature Range , Tj
Toper
* RGK=1KΩ