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产品型号FDA20N50的概述

芯片FDA20N50的概述 FDA20N50是一款广泛应用于电力电子领域的功率MOSFET，属于N-channel类型的金属氧化物半导体场效应晶体管。随着科技的发展，对高性能、低能耗的电子设备的需求日益增加，因此对于高压、高通用性的MOSFET的应用十分广泛。FDA20N50由于其出色的电气特性，在电源转换、开关电源、逆变器等应用中备受青睐。芯片FDA20N50的详细参数详细参数是评估电子元件性能的关键因素。FDA20N50的主要电气参数如下： - 额定电压（VDS）: 500V - 额定电流（ID）: 20A - 栅源阈值电压（VGS(th)）: 2-4V - 漏源电压（VSD）: -1.5V - 最大耗散功率（PD）: 94W - 输入电容（Ciss）: 1600pF - 输出电容（Coss）: 240pF - 反向恢复时间（trr）: 200ns - 开关损耗: 优良 - 工...

产品型号FDA20N50的Datasheet PDF文件预览

April 2007

UniFET

FDA20N50

500V N-Channel MOSFET

Features

Description

•

22A, 500V, R_DS(on)= 0.23Ω @V_GS= 10 V

Low gate charge ( typical 45.6 nC)

Low C_rss( typical 27 pF)

Fast switching

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficient switched mode power supplies and active power factor

correction.

100% avalanche tested

Improved dv/dt capability

TO-3P

FDA Series

G D S

Absolute Maximum Ratings

Symbol

Parameter

FDA20N50

Unit

V_DSS

Drain-Source Voltage

Drain Current

500

I_D

- Continuous (T_C= 25°C)

- Continuous (T_C= 100°C)

13.2

(Note 1)

(Note 2)

I_DM

Drain Current

- Pulsed

± 30

1110

V_GSS

E_AS

I_AR

Gate-Source voltage

Single Pulsed Avalanche Energy

Avalanche Current

(Note 1)

(Note 3)

E_AR

dv/dt

P_D

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

28.0

4.5

V/ns

Power Dissipation

(T_C= 25°C)

- Derate above 25°C

280

2.3

W/°C

T_J,T_STG

T_L

Operating and Storage Temperature Range

-55 to +150

300

°C

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

°C

* Drain current limited by maximum junction termperature.

Thermal Characteristics

Symbol

Parameter

Min.

Max.

0.44

Unit

°C/W

R_θJC

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink

0.24

R_θCS

R_θJA

Thermal Resistance, Junction-to-Ambient

FDA20N50 Rev. B

www.fairchildsemi.com

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FDA20N50

TO-3P

Electrical Characteristics

= 25°C unless otherwise noted

Symbol

Parameter

Conditions

Min

Typ Max Units

Off Characteristics

BV_DSS

Drain-Source Breakdown Voltage

V_GS= 0V, I_D= 250μA, T_J= 25°C

I_D= 250μA, Referenced to 25°C

500

ΔBV_DSS

Breakdown Voltage Temperature

Coefficient

0.50

V/°C

ΔT_J

I_DSS

Zero Gate Voltage Drain Current

V_DS= 500V, V_GS= 0V

V_DS= 400V, T_C= 125°C

μA

I_GSSF

I_GSSR

Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

V_GS= 30V, V_DS= 0V

V_GS= -30V, V_DS= 0V

100

-100

On Characteristics

V_GS(th)Gate Threshold Voltage

R_DS(on)

V_DS= V_GS, I_D= 250μA

V_GS= 10V, I_D= 11A

V_DS= 40V, I_D= 11A

3.0

5.0

0.23

Static Drain-Source

On-Resistance

0.20

24.6

(Note 4)

g_FS

Forward Transconductance

Dynamic Characteristics

C_iss

C_oss

C_rss

Input Capacitance

V_DS= 25V, V_GS= 0V,

f = 1.0MHz

2400

355

3120

465

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics

t_d(on)Turn-On Delay Time

t_r

t_d(off)

t_f

V_DD= 250V, I_D= 20A

R_G= 25Ω

200

760

210

220

59.5

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

375

100

105

45.6

14.8

21.6

(Note 4, 5)

Q_g

V_DS= 400V, I_D= 20A

V_GS= 10V

Q_gs

Q_gd

(Note 4, 5)

Drain-Source Diode Characteristics and Maximum Ratings

I_S

Maximum Continuous Drain-Source Diode Forward Current

Maximum Pulsed Drain-Source Diode Forward Current

1.4

I_SM

V_SD

t_rr

Drain-Source Diode Forward Voltage

Reverse Recovery Time

V_GS= 0V, I_S= 22A

V_GS= 0V, I_S= 20A

507

7.20

μC

dI_F/dt =100A/μs

(Note 4)

Q_rr

Reverse Recovery Charge

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 4.1mH, I = 22A, V = 50V, R = 25Ω, Starting T = 25°C

3. I ≤ 22A, di/dt ≤ 200A/μs, V ≤ BV

, Starting T = 25°C

DSS

4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

www.fairchildsemi.com

FDA20N50 Rev. B

Typical Performance Characteristics

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

10²

V_GS

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

150^oC

25^oC

10¹

Bottom : 5.5 V

10¹

-55^oC

10⁰

* Notes :

1. 250μs Pulse Test

2. T_C= 25^oC

1. V_DS= 40V

2. 250μs Pulse Test

10⁰

10^-1

10⁰

10¹

V_DS, Drain-Source Voltage [V]

V_GS, Gate-Source Voltage [V]

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperatue

0.8

0.6

V_GS= 10V

10¹

0.4

150^oC

25^oC

V_GS= 20V

0.2

*Notes :

1. V_GS= 0V

* Note : T_J= 25^oC

2. 250μs Pulse Test

0.0

10⁰

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

V_SD, Source-Drain voltage [V]

I_D, Drain Current [A]

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

6000

C_iss= C_gs+ C_gd(C_ds= shorted)

V_DS= 100V

C_oss= C_ds+ C_gd

V_DS= 250V

V_DS= 400V

5000

4000

3000

2000

1000

C_rss= C_gd

C_oss

iss

Note :

1. V_GS= 0 V

2. f = 1 MHz

C_rss

* Note : I_D= 20A

10^-1

10⁰

10¹

Q_G, Total Gate Charge [nC]

V_DS, Drain-Source Voltage [V]

www.fairchildsemi.com

FDA20N50 Rev. B

Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation

vs. Temperature

Figure 8. On-Resistance Variation

vs. Temperature

3.0

1.2

2.5

1.1

2.0

1.5

1.0

0.9

0.8

1.0

* Notes :

1. V_GS= 0 V

1. V_GS= 10 V

2. I_D= 5.5 A

0.5

* Notes :

0.5

0.0

-100

2. I_D= 250 μA

1. V_GS= 10 V

2. I_D= 11 A

150

-50

100

200

T_J, Junction Temperature [^oC]

0.0

-100

-50

100

150

200

100

150

T, Junction Temperature [^oC]

T_J, Junction Temperature [^oC]

Figure 9. Safe Operating Area

Figure 10. Maximum Drain Current

vs. Case Temperature

10²

10¹

10 μs

100 μs

1 ms

10 ms

100 ms

Operation in This Area

is Limited by R _DS(on)

10⁰

* Notes :

1. T_C= 25 ^o

2. T_J= 150 ^o

3. Single Pulse

10^-1

10⁰

10¹

10²

10³

100

125

150

T_C, Case Temperature [^oC]

V_DS, Drain-Source Voltage [V]

Figure 11. Transient Thermal Response Curve

1 0 ⁰

1 0 ^-1

1 0 ^-2

D = 0 .5

0 .2

0 .1

P_DM

0 .0 5

t₁

0 .0 2

0 .0 1

t₂

N o te s

1 . _{θ J C}(t)

2 . D u ty F a c to r,

3 . T _JMT _CP _D

0 .4 4 ^oC /W M a x .

t₁/t₂

s in g le p u ls e

_{θ J C}(t)

1 0 ^-5

1 0 ^-4

1 0 ^-3

1 0 ^-2

1 0 ^-1

1 0 ⁰

1 0 ¹

t₁, S q u a re W a v e P u ls e D u ra tio n [s e c ]

www.fairchildsemi.com

FDA20N50 Rev. B

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

www.fairchildsemi.com

FDA20N50 Rev. B

Peak Diode Recovery dv/dt Test Circuit & Waveforms

www.fairchildsemi.com

FDA20N50 Rev. B

Mechanical Dimensions

TO-3P

15.60 ±0.20

4.80 ±0.20

13.60 ±0.20

9.60 ±0.20

+0.15

ø3.20 ±0.10

1.50

–0.05

2.00 ±0.20

3.00 ±0.20

1.00 ±0.20

1.40 ±0.20

+0.15

–0.05

0.60

5.45TYP

[5.45 ±0.30

]

[5.45 ±0.30]

Dimensions in Millimeters

www.fairchildsemi.com

FDA20N50 Rev. B

Mechanical Dimensions

TO-3PN

Dimensions in Millimeters

www.fairchildsemi.com

FDA20N50 Rev. B

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not

intended to be an exhaustive list of all such trademarks.

ACEx^®

HiSeC™

i-Lo™

Programmable Active Droop™

QFET^®

QS™

QT Optoelectronics™

Quiet Series™

RapidConfigure™

RapidConnect™

ScalarPump™

SMART START™

SPM^®

STEALTH™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

TinyLogic^®

TINYOPTO™

TinyPower™

TinyWire™

TruTranslation™

µSerDes™

UHC^®

UniFET™

VCX™

Wire™

Across the board. Around the world.™

ActiveArray™

Bottomless™

Build it Now™

CoolFET™

ImpliedDisconnect™

IntelliMAX™

ISOPLANAR™

MICROCOUPLER™

MicroPak™

MICROWIRE™

MSX™

CROSSVOLT™

CTL™

Current Transfer Logic™

DOME™

MSXPro™

OCX™

OCXPro™

E²CMOS™

EcoSPARK^®

EnSigna™

OPTOLOGIC^®

OPTOPLANAR^®

PACMAN™

POP™

FACT Quiet Series™

FACT^®

FAST^®

FASTr™

Power220^®

Power247^®

PowerEdge™

PowerSaver™

PowerTrench^®

TCM™

FPS™

The Power Franchise^®

FRFET^®

™

GlobalOptoisolator™

GTO™

TinyBoost™

TinyBuck™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO

IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE

OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE

RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS,

SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT

THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which,

(a) are intended for surgical implant into the body or (b) support

or sustain life, and (c) whose failure to perform when properly

used in accordance with instructions for use provided in the

labeling, can be reasonably expected to result in a significant

injury of the user.

2. A critical component in any component of a life support,

device, or system whose failure to perform can be reasonably

expected to cause the failure of the life support device or system,

or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or In Design

This datasheet contains the design specifications for product

development. Specifications may change in any manner without notice.

Preliminary

First Production

Full Production

This datasheet contains preliminary data; supplementary data will be

published at a later date. Fairchild Semiconductor reserves the right to

make changes at any time without notice to improve design.

No Identification Needed

This datasheet contains final specifications. Fairchild Semiconductor

reserves the right to make changes at any time without notice to

improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product that has been dis-

continued by Fairchild Semiconductor.The datasheet is printed for refer-

ence information only.

Rev. I24

www.fairchildsemi.com

FDA20N50 Rev. B

FDA20N50相关文章

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FDA20N50产品参数

型号:	FDA20N50
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Active
IHS 制造商：	ROCHESTER ELECTRONICS LLC
零件包装代码：	TO-3P
包装说明：	LEAD FREE, TO-3P, 3 PIN
针数：	3
Reach Compliance Code：	unknown
风险等级：	5.36
Is Samacsys：	N
其他特性：	FAST SWITCHING
雪崩能效等级（Eas）：	1110 mJ
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	500 V
最大漏极电流 (ID)：	22 A
最大漏源导通电阻：	0.23 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PSFM-T3
JESD-609代码：	e3
湿度敏感等级：	NOT APPLICABLE
元件数量：	1
端子数量：	3
工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT APPLICABLE
极性/信道类型：	N-CHANNEL
最大脉冲漏极电流 (IDM)：	88 A
认证状态：	COMMERCIAL
表面贴装：	NO
端子面层：	MATTE TIN
端子形式：	THROUGH-HOLE
端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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