FDB5800现货热卖使用介绍供应商报价哪里找芯片批发报价-中国IC网-芯三七

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产品型号FDB5800的概述

芯片FDB5800的概述 FDB5800是一款由Fairchild Semiconductor（现属于NVIDIA）生产的集成电路，广泛应用于电源管理、直流-直流（DC-DC）转换器以及高效能电源系统中。作为一款高性能的功率放大器，FDB5800在多个电子应用领域中尤为重要，其设计不仅注重功率效率，还兼顾了热管理和体积优化。其工作原理基于MOSFET技术，具有低导通电阻和高开关速度，使其在高频操作时依然能够保持高效能。这使得FDB5800在需求高效率和高稳定性的现代电子产品中被广泛采用，如电源适配器、笔记本电脑以及汽车电子产品。芯片FDB5800的详细参数 FDB5800的典型参数包括： - 工作电压：最大输入电压可达到30V - 导通电阻：在Vgs = 10V时，Rds(on)约为3.6mΩ - 最大输出电流：可满足高达300A的瞬态电流需求 - 开关频率：可优化至1MHz以上 ...

产品型号FDB5800的Datasheet PDF文件预览

September 2005

FDB5800

N-Channel Logic Level PowerTrench^®MOSFET

60V, 80A, 7mΩ

Features

Applications

r_DS(ON)= 5.5mΩ (Typ.), V_GS= 5V, I_D= 80A

Motor/ Body Load Control

High performance trench technology for extermely low

ABS Systems

Rdson

Power Train Management

Injection Systems

Low Gate Charge

High power and current handling capability

Qualified to AEC Q101

RoHS Compliant

DC-DC Converters and Off-Line UPS

GATE

DRAIN

(FLANGE)

SOURCE

TO-263AB

FDB SERIES

FDB5800 Rev. A

www.fairchildsemi.com

MOSFET Maximum Ratings T_C= 25°C unless otherwise noted

Symbol

V_DSS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

Drain Current

±20

Continuous (T_C< 102^oC, V_GS= 10V)

Continuous (T_C< 90^oC, V_GS= 5V)

Continuous (T_amb= 25^oC, V_GS= 10V, with R_θJA= 43^oC/W)

Pulsed

I_D

Figure 4

652

E_AS

Single Pulse Avalanche Energy (Note 1)

Power dissipation

Derate above 25^oC

242

P_D

1.61

W/^oC

^oC

T_J, T_STG

Operating and Storage Temperature

-55 to 175

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance Junction to Case TO-263

0.62

62.5

^oC/W

Thermal Resistance Junction to Ambient TO-263 ( Note 2)

Thermal Resistance Junction to Ambient TO-263, 1in²copper pad area

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

Tape Width

24mm

Quantity

800 units

FDB5800

TO-263AB

330mm

Electrical Characteristics T_C= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

B_VDSS

Drain to Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate to Source Leakage Current

I_D= 250µA, V_GS= 0V

V_DS= 48V

I_DSS

µA

V_GS= 0V

T_C= 150^oC

250

±100

I_GSS

V_GS= ±20V

On Characteristics

V_GS(TH)

Gate to Source Threshold Voltage

V_GS= V_DS, I_D= 250µA

I_D= 80A, V_GS= 10V

I_D= 80A, V_GS= 4.5V

I_D= 80A, V_GS= 5V

1.0

2.5

6.0

7.2

7.0

4.6

5.8

5.5

r_DS(ON)

Drain to Source On Resistance

mΩ

I_D= 80A, V_GS= 10V,

T_J= 175^oC

12.6

Dynamic Characteristics

C_ISS

C_OSS

C_RSS

R_G

Input Capacitance

6625

628

262

1.4

Ω

V_DS= 15V, V_GS= 0V,

f = 1MHz

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

V_GS= 0.5V, f = 1MHz

V_GS= 0V to 10V

V_GS= 0V to 5V

Q_g(TOT)

Q_g(5)

Q_g(TH)

Q_gs

Total Gate Charge at 10V

Total Gate Charge at 5V

Threshold Gate Charge

Gate to Source Gate Charge

Gate Charge Threshold to Plateau

Gate to Drain “Miller” Charge

104

135

V_DD= 30V

I_D= 80A

V_GS= 0V to 1V

6.0

18.4

12.5

20.1

I_g= 1.0mA

Q_gs2

Q_gd

www.fairchildsemi.com

FDB5800 Rev. A

Switching Characteristics (V_GS= 5V)

t_ON

t_d(ON)

t_r

Turn-On Time

Turn-On Delay Time

Rise Time

62.1

20.3

22.0

27.1

12.1

V_DD= 30V, I_D= 80A

V_GS= 5V, R_GS= 2Ω

t_d(OFF)

t_f

Turn-Off Delay Time

Fall Time

t_OFF

Turn-Off Time

59.0

Drain-Source Diode Characteristics

I_SD= 80A

1.25

1.0

V_SD

Source to Drain Diode Voltage

I_SD= 40A

t_rr

Reverse Recovery Time

I_SD= 60A, dI_SD/dt = 100A/µs

Q_RR

Reverse Recovered Charge

Notes:

1: Starting T = 25°C, L = 1mH, I = 36A, V = 54V, V = 10V.

2: Pulse width = 100s.

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For

a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems

certification.

www.fairchildsemi.com

FDB5800 Rev. A

Typical Characteristics T_C= 25°C unless otherwise noted

1.2

1.0

0.8

0.6

0.4

0.2

140

CURRENT LIMITED

BY PACKAGE

120

100

VGS =10V

VGS = 5V

= 0.62°C/W

100

150

175

125

100

125

150

, CASE TEMPERATURE ( C)

, CASE TEMPERATURE (°C)

Figure 1. Normalized Power Dissipation vs Case

Temperature

Figure 2. Maximum Continuous Drain Current vs

Case Temperature

DUTY CYCLE - DESCENDING ORDER

0.5

0.2

0.1

0.05

0.02

0.01

0.1

NOTES:

DUTY FACTOR: D = t /t

SINGLE PULSE

0.01

PEAK T = P

x R

+ T

θJC C

-5

-4

-3

-2

-1

t, RECTANGULAR PULSE DURATION (s)

Figure 3. Normalized Maximum Transient Thermal Impedance

1000

= 25 C

FOR TEMPERATURES

TRANSCONDUCTANCE

MAY LIMIT CURRENT

IN THIS REGION

ABOVE 25 C DERATE PEAK

CURRENT AS FOLLOWS:

175 - T

150

I = I

= 5V

100

-5

-4

-3

-2

-1

t, PULSE WIDTH (s)

Figure 4. Peak Current Capability

www.fairchildsemi.com

FDB5800 Rev. A

Typical Characteristics T_C= 25°C unless otherwise noted

1000

500

If R = 0

= (L)(I )/(1.3*RATED BV

- V

)

If R

DSS

10µs

≠ 0

= (L/R)ln[(I *R)/(1.3*RATED BV

- V ) +1]

DSS

100

100µs

STARTING T = 25 C

OPERATION IN THIS

AREA MAY BE LIMITED

1ms

BY r

DS(ON)

STARTING T = 150 C

10ms

SINGLE PULSE

100ms

= MAX RATED

= 25 C

0.1

100

0.01

0.1

1000

100

, DRAIN TO SOURCE VOLTAGE (V)

, TIME IN AVALANCHE (ms)

NOTE: Refer to Fairchild Application Notes AN7514 and AN7515

Figure 6. Unclamped Inductive Switching

Capability

Figure 5. Forward Bias Safe Operating Area

160

PULSE DURATION = 80µs

10V

4.5V

140

120

100

DUTY CYCLE = 0.5% MAX

140

5.0V

4.0V

120

= 6V

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

100

= 125 C

3.5V

= 25 C

= -55 C

3.0V

0.5

1.0

1.5

2.0

, GATE TO SOURCE VOLTAGE (V)

, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Transfer Characteristics

Figure 8. Saturation Characteristics

0.016

0.014

0.012

2.2

= 20A

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

= 80A

2.0

1.8

1.6

1.4

1.2

1.0

0.8

= 10V

= 175 C

0.010

0.008

0.006

0.004

0.002

= 25 C

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

0.6

- 80

- 40

120

160

200

, GATE TO SOURCE VOLTAGE (V)

T , AMBIENT TEMPERATURE ( C)

Figure 9. On-Resistance Variation vs Gate-to-

Source Voltage

Figure 10. Normalized Drain to Source On

Resistance vs Junction Temperature

www.fairchildsemi.com

FDB5800 Rev. A

Typical Characteristics T_C= 25°C unless otherwise noted

1.4

1.2

1.0

1.2

1.1

1.0

0.9

= V

= 250µA

0.8

0.6

0.4

0.2

- 80

- 40

120

160

200

- 80

- 40

120

160

200

T , AMBIENT TEMPERATURE ( C)

Figure 11. Normalized Gate Threshold Voltage vs

Junction Temperature

Figure 12. Normalized Drain to Source

Breakdown Voltage vs Junction Temperature

20000

VDD =30V

10000

1000

100

ISS

OSS

WAVEFORMS IN

ASCENDING ORDER:

ID = 80A

ID = 1A

f = 1MHz

= 0V

RSS

100

0.1

100

, DRAIN TO SOURCE VOLTAGE (V)

Q , GATE CHARGE (nC)

Figure 13. Capacitance vs Drain to Source

Voltage

Figure 14. Gate Charge Waveforms for Constant

Gate Current

www.fairchildsemi.com

FDB5800 Rev. A

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

ACEx™

PowerSaver™

SuperSOT™-8

SyncFET™

TinyLogic

ISOPLANAR™

LittleFET™

MICROCOUPLER™

MicroFET™

MicroPak™

MICROWIRE™

MSX™

FAST

ActiveArray™

Bottomless™

Build it Now™

CoolFET™

CROSSVOLT™

DOME™

EcoSPARK™

E²CMOS™

EnSigna™

FACT™

PowerTrench

FASTr™

FPS™

FRFET™

GlobalOptoisolator™

GTO™

QFET

QS™

TINYOPTO™

TruTranslation™

UHC™

QT Optoelectronics™

Quiet Series™

RapidConfigure™

RapidConnect™

μSerDes™

SILENT SWITCHER

SMART START™

SPM™

UltraFET

HiSeC™

I²C™

UniFET™

VCX™

Wire™

MSXPro™

OCX™

i-Lo™

ImpliedDisconnect™

IntelliMAX™

OCXPro™

OPTOLOGIC

OPTOPLANAR™

PACMAN™

POP™

Power247™

PowerEdge™

FACT Quiet Series™

Stealth™

Across the board. Around the world.™

SuperFET™

SuperSOT™-3

SuperSOT™-6

The Power Franchise

Programmable Active Droop™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVESTHE RIGHTTO MAKE CHANGES WITHOUTFURTHER NOTICETOANY

PRODUCTS HEREINTO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOTASSUMEANYLIABILITY

ARISING OUTOFTHEAPPLICATION OR USE OFANYPRODUCTOR CIRCUITDESCRIBED HEREIN; NEITHER DOES IT

CONVEYANYLICENSE UNDER ITS PATENTRIGHTS, NORTHE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or

In Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. I16

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