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产品型号FDC604P的概述

芯片FDC604P的概述 FDC604P是一款由Fairchild Semiconductor（现属于ON Semiconductor）生产的高性能双通道功率MOSFET驱动器。这款驱动器以其高频率、高效率和紧凑的设计而著称，广泛应用于电源管理、马达控制以及开关电源等领域。FDC604P集成了高侧和低侧驱动器，特别适合对功率MOSFET进行驱动，可以有效提升电路的工作效率，并减少功率损耗。功能特点 FDC604P集成了两个完整的输出驱动电路，可以有效控制高、低侧MOSFET的开启与关闭。其有效的驱动能力确保了MOSFET在开关过程中快速切换，降低了发热量，同时提高了电源的效率。这种双通道设计能力使得FDC604P在多种应用场合具有相当强的适应性和灵活性。此外，该芯片具备防短路和过热保护等功能，增强了系统的整体可靠性。芯片FDC604P的详细参数 FDC604P的详细参数包括但不限...

产品型号FDC604P的Datasheet PDF文件预览

June 2000

PRELIMINARY

FDC604P

P-Channel 1.8V Specified PowerTrench^MOSFET

General Description

Features

This P-Channel 1.8V specified MOSFET uses

Fairchild’s low voltage PowerTrench process. It has

been optimized for battery power management

applications.

• –5.5 A, –20 V. R_DS(ON)= 0.033 Ω @ V_GS= –4.5 V

R_DS(ON)= 0.043 Ω @ V_GS= –2.5 V

_DS(ON)= 0.060 Ω @ V_GS= –1.8 V

• Fast switching speed.

Applications

• High performance trench technology for extremely

low R_DS(ON)

• Battery management

• Load switch

• Battery protection

SuperSOT ^TM-6

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

Parameter

Ratings

Units

V_DSS

Drain-Source Voltage

–20

V_GSS

I_D

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

-5.5

-20

(Note 1a)

P_D

Maximum Power Dissipation

(Note 1a)

(Note 1b)

1.6

0.8

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

R_θJA

R_θJC

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

.604

FDC604P

7’’

8mm

3000 units

FDC604P Rev B (W)

2000 Fairchild Semiconductor Corporation

Electrical Characteristics

T_A= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min Typ Max Units

Off Characteristics

BV_DSS

Drain–Source Breakdown Voltage

–20

_GS= 0 V, I_D= –250 µA

Breakdown Voltage Temperature

–12

∆BVDSS

===∆T_J

I_DSS

I_GSSF

I_GSSR

I_D= –250 µA,Referenced to 25°C

mV/°C

Coefficient

Zero Gate Voltage Drain Current

Gate–Body Leakage, Forward

Gate–Body Leakage, Reverse

V_DS= –16 V, V_GS= 0 V

–1

100

–100

µA

V_GS= 8 V,

V_GS= –8 V

V_DS= 0 V

On Characteristics

(Note 2)

Gate Threshold Voltage

V_GS(th)

–0.4

–20

–0.7

–1.5

_DS= V_GS, I_D= –250 µA

Gate Threshold Voltage

∆VGS(th)

===∆T_J

I_D= –250 µA,Referenced to 25°C

mV/°C

Temperature Coefficient

R_DS(on)

Static Drain–Source

On–Resistance

V_GS= –4.5 V,

V_GS= –2.5 V,

V_GS= –1.8 V,

V_GS= –4.5 V,

V_DS= –5 V,

I_D= –5.5 A

I_D= –4.8 A

I_D= –4.0 A

V_DS= –5 V

I_D= –3.5 A

0.024 0.033

0.030 0.043

0.042 0.060

Ω

I_D(on)

g_FS

On–State Drain Current

Forward Transconductance

Dynamic Characteristics

C_iss

C_oss

C_rss

Input Capacitance

1926

530

185

V_DS= –10 V,

f = 1.0 MHz

V _GS= 0 V,

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics (Note 2)

t_d(on)

t_r

t_d(off)

t_f

Turn–On Delay Time

Turn–On Rise Time

Turn–Off Delay Time

Turn–Off Fall Time

Total Gate Charge

Gate–Source Charge

Gate–Drain Charge

144

V_DD= –10 V,

V_GS= –4.5 V,

I_D= –1 A,

R_GEN= 6 Ω

Q_g

Q_gs

Q_gd

_DS= –10 V,

I_D= –3.5 A,

V_GS= –4.5 V

7.5

Drain–Source Diode Characteristics and Maximum Ratings

I_S

Maximum Continuous Drain–Source Diode Forward Current

–1.3

–1.2

V_SD

Drain–Source Diode Forward

V_GS= 0 V, I_S= –1.3 A (Note 2)

–0.7

Voltage

Notes:

1. R_θJAis the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain

pins. R_θJCis guaranteed by design while R_θCAis determined by the user's board design.

a. 78°C/W when mounted on a 1in²pad of 2oz copper on FR-4 board.

b. 156°C/W when mounted on a minimum pad.

2. Pulse Test: Pulse Width ≤=300 µs, Duty Cycle ≤=2.0%

FDC604P Rev B(W)

Typical Characteristics

2.5

V_GS= -1.5V

V_GS= -4.5V

-2.0V

-2.5V

-1.8V

-2.0V

1.5

-2.5V

-1.5V

-4.5V

0.5

-I_D, DRAIN CURRENT (A)

-V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

0.12

0.09

0.06

0.03

1.5

I_D= -2.8 A

I_D= -5.5A

_GS= -4.5V

1.4

1.3

1.2

1.1

T_A= 125^oC

0.9

0.8

0.7

T_A= 25^oC

-50

-25

100

125

150

T_J, JUNCTION TEMPERATURE (^oC)

-V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation

withTemperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

V_GS= 0V

T_A= -55^oC

V_DS= -5V

T_A= 125^oC

125^oC

0.1

25^oC

-55^oC

0.01

0.001

0.0001

0.2

0.4

0.6

0.8

1.2

0.5

1.5

2.5

-V_SD, BODY DIODE FORWARD VOLTAGE (V)

-V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDC604P Rev B(W)

Typical Characteristics

3500

3000

2500

2000

1500

1000

500

V_DS= -5V

I_D= -5.5A

f = 1MHz

_GS= 0 V

-10V

-15V

C_ISS

C_OSS

C_RSS

-V_DS, DRAIN TO SOURCE VOLTAGE (V)

Q_g, GATE CHARGE (nC)

Figure 7. Gate Charge Characteristics.

Figure 8. Capacitance Characteristics.

100

SINGLE PULSE

R_DS(ON)LIMIT

_θJA= 156^oC/W

T_A= 25^oC

100

1ms

10ms

100ms

V_GS= -4.5V

0.1

0.01

SINGLE PULSE

R^θ_JA= 156^oC/W

T_A= 25^oC

0.1

100

0.1

100

-V_DS, DRAIN-SOURCE VOLTAGE (V)

SINGLE PULSE TIME (SEC)

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum

Power Dissipation.

0 .5

0 .2

R _{θJ A}

_{θJ A}(t)

r(t)

+ R _{θJ A}

15 6 °C /W

0 .1

0.0 1

P (pk)

0.1

0 .05

t₁

T _J

T _A

_{θ J A}(t)

t₁/ t₂

t₂

D u ty C ycle, D

0 .0 2

0 .0 1

S IN G LE P U LS E

0.00 1

0 .000 1

0.001

0.01

0.1

1 0

100

10 00

₁, T IM E (se c)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b.

Transient thermal response will change depending on the circuit board design.

FDC604P Rev B(W)

SuperSOT^TM-6 Tape and Reel Data and Package Dimensions

SSOT-6 Packaging

Configuration:

Figure 1.0

Packaging Description:

Customize Label

SSOT-6 parts are shipped in tape. The carrier tape is

made from

a dissipative (carbon filled) polycarbonate

resin. The cover tape is a multilayer film (Heat Activated

Adhesive in nature) primarily composed of polyester film,

adhesive layer, sealant, and anti-static sprayed agent.

These reeled parts in standard option are shipped with

3,000 units per 7" or 177cm diameter reel. The reels are

dark blue in color and is made of polystyrene plastic (anti-

static coated). Other option comes in 10,000 units per 13"

or 330cm diameter reel. This and some other options are

described in the Packaging Information table.

Antistatic Cover Tape

These full reels are individually barcode labeled and

placed inside a pizza box (illustrated in figure 1.0) made of

recyclable corrugated brown paper with

printing. One pizza box contains three reels maximum.

And these pizza boxes are placed inside barcode

a Fairchild logo

labeled shipping box which comes in different sizes

depending on the number of parts shipped.

Embossed

Carrier Tape

F63TNR

Label

631

SSOT-6 Packaging Information

Pin 1

Standard

Packaging Option

D87Z

(no flow c ode)

Packaging type

TNR

3,000

7" Dia

TNR

10,000

13"

SSOT-6 Unit Orientation

Qty per Reel/Tube/Bag

Reel Size

Box Dimension (mm)

Max qty per Box

184x187x47 343x343x64

9,000

0.0158

0.1440

30,000

0.0158

0.4700

343mm x 342mm x 64mm

Intermediate box for D87Z Option

F63TNR Label

Weight per unit (gm)

Weight per Reel (kg)

Note/Comments

F63TNR

Label

F63TNR Label sample

F63TNR

Label

LOT: CBVK741B019

FSID: FDC633N

QTY: 3000

SPEC:

184mm x 187mm x 47mm

Pizza Box for Standard Option

D/C1: D9842

D/C2:

QTY1:

QTY2:

SPEC REV:

CPN:

SSOT-6 Tape Leader and Trailer

N/F: F

(F63TNR)3

Configuration:

Figure 2.0

Carrier Tape

Component s

Cover Tape

Trailer Tape

Leader Tape

300mm minimum or

75 empty poc kets

500mm minimum or

125 empty poc kets

1998 Fairchild Semiconductor Corporation

August 1999, Rev. C

SuperSOT^TM-6 Tape and Reel Data and Package Dimensions, continued

SSOT-6 Embossed Carrier Tape

Configuration:

Figure 3.0

User Direction of Feed

Dimensions are in millimeter

Pkg type

SSOT-6

(8mm)

3.23

+/-0.10

3.18

+/-0.10

8.0

+/-0.3

1.55

+/-0.05

1.125

+/-0.125

1.75

+/-0.10

6.25

min

3.50

+/-0.05

4.0

+/-0.1

4.0

+/-0.1

1.37

+/-0.10

0.255

+/-0.150

5.2

+/-0.3

0.06

+/-0.02

Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481

rotational and lateral movement requirements (see sketches A, B, and C).

0.5mm

maximum

20 deg maximum

Typical

component

cavity

center line

0.5mm

maximum

20 deg maximum component rotation

Typical

component

center line

Sketch A (Side or Front Sectional View)

Component Rotation

Sketch C (Top View)

Component lateral movement

Sketch B (Top View)

Component Rotation

SSOT-6 Reel Configuration:

Figure 4.0

W1 Measured at Hub

Dim A

Max

Dim A

max

See detail AA

Dim N

Diameter Option

B Min

Dim C

See detail AA

Dim D

min

13" Diameter Option

W2 max Measured at Hub

DETAIL AA

Dimensions are in inches and millimeters

Reel

Option

Tape Size

Dim A

Dim B

Dim C

Dim D

Dim N

Dim W1

Dim W2

Dim W3 (LSL-USL)

7.00

177.8

0.059

1.5

512 +0.020/-0.008

13 +0.5/-0.2

0.795

20.2

2.165

0.331 +0.059/-0.000

8.4 +1.5/0

0.567

14.4

0.311 – 0.429

7.9 – 10.9

8mm

7" Dia

13.00

330

0.059

1.5

512 +0.020/-0.008

13 +0.5/-0.2

0.795

20.2

4.00

100

0.331 +0.059/-0.000

8.4 +1.5/0

0.567

14.4

0.311 – 0.429

7.9 – 10.9

13" Dia

July 1999, Rev. C

SuperSOT^TM-6 Tape and Reel Data and Package Dimensions, continued

SuperSOT -6 (FS PKG Code 31, 33)

1:1

Scale 1:1 on letter size paper

Dimensions shown below are in:

inches [millimeters]

Part Weight per unit (gram): 0.0158

1998 Fairchild Semiconductor Corporation

September 1998, Rev. A

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

ACEx™

HiSeC™

SuperSOT™-8

SyncFET™

TinyLogic™

UHC™

Bottomless™

CoolFET™

CROSSVOLT™

E²CMOS^TM

FACT™

ISOPLANAR™

MICROWIRE™

POP™

PowerTrench

QFET™

VCX™

QS™

FACT Quiet Series™

FAST

FASTr™

Quiet Series™

SuperSOT™-3

SuperSOT™-6

GTO™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD

DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT

RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or

In Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. E

FDC604P相关文章

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FDC604P产品参数

型号:	FDC604P
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Active
IHS 制造商：	ROCHESTER ELECTRONICS LLC
零件包装代码：	SOT
包装说明：	SUPERSOT-6
针数：	6
Reach Compliance Code：	unknown
风险等级：	5.2
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	20 V
最大漏极电流 (ID)：	5.5 A
最大漏源导通电阻：	0.031 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-G6
JESD-609代码：	e3
湿度敏感等级：	1
元件数量：	1
端子数量：	6
工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性/信道类型：	P-CHANNEL
认证状态：	COMMERCIAL
表面贴装：	YES
端子面层：	MATTE TIN
端子形式：	GULL WING
端子位置：	DUAL
处于峰值回流温度下的最长时间：	30
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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