FDC610PZ各脚功能电路原理芯片引脚定义引脚图及功能IC贸易商-中国IC网-芯三七

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产品型号FDC610PZ的概述

FDC610PZ芯片概述 FDC610PZ是一款由Texas Instruments（德州仪器）公司生产的高性能、低功耗的电压驱动器，其设计目标是满足仪器仪表、便携式设备和工业应用的需求。该芯片主要用于从0到12V的电压范围内，提供精确的电压调节和稳压功能。FDC610PZ不仅具备电源管理特性，且其小巧的封装使其极适合于空间受限的应用。该芯片的主要应用领域包括消费电子、工业自动化、电源管理系统及通信设备等。凭借其高效率、快速反应时间和出色的热稳定性，FDC610PZ被广泛运用于需要高可靠性的场合。 FDC610PZ的详细参数电气特性 - 输入电压范围: 3V至12V - 输出电压类型: 线性输出，具有很小的输出纹波 - 最大输出电流: 1500 mA - 静态功耗: 低静态功耗以提高整体系统效率 - 输出纹波: 小于5mV - 线性度: 优良的线性度性能，最大误差不超过1% ...

产品型号FDC610PZ的Datasheet PDF文件预览

August 2007

FDC610PZ

P-Channel PowerTrench^®MOSFET

–30V, –4.9A, 42mΩ

Features

General Description

Max r_DS(on)= 42mΩ at V_GS= –10V, I_D= –4.9A

Max r_DS(on)= 75mΩ at V_GS= –4.5V, I_D= –3.7A

Low gate charge (17nC typical).

This P-Channel MOSFET is produced using Fairchild

Semiconductor’s advanced PowerTrench^®process that has

been especially tailored to minimize the on-state resistance and

yet maintain low gate charge for superior switching performance.

These devices are well suited for battery power applications:

load switching and power management, battery charging

circuits, and DC/DC conversion.

High performance trench technology for extremely low r_DS(on).

SuperSOT^TM–6 package: small footprint (72% smaller than

standard SO–8) low profile (1mm thick).

Application

RoHS Compliant

DC - DC Conversion

Pin 1

SuperSOT^TM-6

MOSFET Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

Drain Current -Continuous

-Pulsed

–30

±25

(Note 1a)

–4.9

I_D

–20

Power Dissipation

(Note 1a)

(Note 1b)

1.6

P_D

Power Dissipation

0.8

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

R_θJA

Thermal Resistance, Junction to Ambient

(Note 1a)

(Note 1b)

°C/W

156

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

Tape Width

8mm

Quantity

.610Z

FDC610PZ

SSOT6

7’’

3000units

FDC610PZ Rev.B

www.fairchildsemi.com

Electrical Characteristics T_J= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

BV_DSS

Drain to Source Breakdown Voltage

I_D= –250µA, V_GS= 0V

–30

∆BV_DSS

∆T_J

Breakdown Voltage Temperature

Coefficient

I_D= –250µA, referenced to 25°C

–22

mV/°C

I_DSS

I_GSS

Zero Gate Voltage Drain Current

Gate to Source Leakage Current

V_DS= –24V, V_GS= 0V

V_GS= ±25V, V_DS= 0V

–1

µA

±10

On Characteristics

V_GS(th)

Gate to Source Threshold Voltage

V_GS= V_DS, I_D= –250µA

–1

–2.2

–3

∆V_GS(th)

∆T_J

Gate to Source Threshold Voltage

Temperature Coefficient

I_D= –250µA, referenced to 25°C

mV/°C

V_GS= –10V, I_D= –4.9A

r_DS(on)

g_FS

Static Drain to Source On Resistance

Forward Transconductance

V_GS= –4.5V, I_D= –3.7A

mΩ

V_GS= –10V, I_D= –4.9A, T_J= 125°C

V_DD= –10V, I_D= –4.9A

Dynamic Characteristics

C_iss

C_oss

C_rss

R_g

Input Capacitance

755

145

125

1005

195

Ω

V_DS= –15V, V_GS= 0V,

f = 1MHz

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

190

f = 1MHz

Switching Characteristics

t_d(on)

t_r

t_d(off)

t_f

Turn-On Delay Time

Rise Time

V_DD= –15V, I_D= –4.9A

V_GS= –10V, R_GEN= 6Ω

Turn-Off Delay Time

Fall Time

Q_g

Total Gate Charge

Gate to Source Gate Charge

Gate to Drain “Miller” Charge

V_GS= 0V to –10V

Q_g

V_GS= 0V to –4.5V

V_DD= –15V,

I_D= –4.9A

Q_gs

Q_gd

2.9

4.3

Drain-Source Diode Characteristics

I_S

Maximum Continuous Drain-Source Diode Forward Current

–1.3

–1.2

V_SD

t_rr

Source to Drain Diode Forward Voltage V_GS= 0V, I_S= –1.3A (Note 2)

–0.8

Reverse Recovery Time

I_F= –4.9A, di/dt = 100A/µs

Reverse Recovery Charge

Q_rr

Notes:

1. R

is determined with the device mounted on a 1in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

is guaranteed by design while R is determined by

θCA

θJA

θJC

the user's board design.

a. 78°C/W when mounted on a

1 in pad of 2 oz copper.

b. 156°C/W when mounted on a

minimum pad of 2 oz copper.

2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.

www.fairchildsemi.com

FDC610PZ Rev.B

Typical Characteristics T_J= 25°C unless otherwise noted

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

PULSE DURATION = 80µs

DUTY CYCLE = 0.5%MAX

PULSE DURATION = 80µs

DUTY CYCLE = 0.5%MAX

V_GS= -3.5V

V_GS= -10V

V_GS= -4V

V_GS= -5V

V_GS= -4.5V

V_GS= -4V

V_GS= -5V

V_GS= -3.5V

V_GS= -10V

-V_DS, DRAIN TO SOURCE VOLTAGE (V)

-I_D, DRAIN CURRENT(A)

Figure 1. On-Region Characteristics

Figure2. N o r m a l i z e d O n - R e s i s ta n c e

vs Drain Current and Gate Voltage

1.6

200

I_D= -4.9A

_GS= -10V

PULSE DURATION = 80µs

DUTY CYCLE = 0.5%MAX

I_D= -4.9A

1.4

1.2

1.0

0.8

0.6

150

100

T_J= 125^oC

T_J= 25^oC

-75 -50 -25

25 50 75 100 125 150

T_J, JUNCTION TEMPERATURE (^oC)

-V_GS, GATE TO SOURCE VOLTAGE (V)

F i gu re 3 . N orma li zed On - Res is ta nc e

vs Junction Temperature

Figure4. On-Resistance vs Gate to

Source Voltage

PULSE DURATION = 80µs

DUTY CYCLE = 0.5%MAX

V_GS= 0V

15 V_DD= -5V

T_J= 150^oC

0.1

T_J= 150^oC

T_J= 25^oC

0.01

T_J= 25^oC

T_J= -55^oC

1E-3

0.0

0.2

0.4

0.6

0.8

1.0

1.2

-V_GS, GATE TO SOURCE VOLTAGE (V)

-V_SD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics

Figure6. Source to Drain Diode

Forward Voltage vs Source Current

www.fairchildsemi.com

FDC610PZ Rev.B

Typical Characteristics T_J= 25°C unless otherwise noted

2000

1000

I_D= -4.9A

C_iss

V_DD= -10V

V_DD= -15V

C_oss

V_DD= -20V

C_rss

100

f = 1MHz

= 0V

0.1

-V_DS, DRAIN TO SOURCE VOLTAGE (V)

Q , GATE CHARGE(nC)

Figure 7. Gate Charge Characteristics

Figure8. C a p a c i t a n c e v s D r a i n

to Source Voltage

10⁵

10⁴

V_DS= 0V

100us

1ms

10³

10²

0.1

T_J= 150^oC

10¹

10ms

100ms

SINGLE PULSE

T_J= MAX RATED

10⁰

_θJA= 156^oC/W

_A= 25^oC

10^-1

T_J= 25^oC

10s

10^-2

10^-3

THIS AREA IS

LIMITED BY r

DS(on)

0.01

0.1

100

-V_GS, GATE TO SOURCE VOLTAGE (V)

-V_DS, DRAIN to SOURCE VOLTAGE (V)

Figure 9. Gate Leakage Current vs Gate to

Source Voltage

Figure10. Forward Bias Safe

Operating Area

1000

V_GS= -10V

SINGLE PULSE

R_θJA= 156^oC/W

_A= 25^oC

100

0.5

10^-4

10^-3

10^-2

10^-1

t, PULSE WIDTH (s)

10⁰

10¹

10²

10³

Figure 11. Single Pulse Maximum Power Dissipation

www.fairchildsemi.com

FDC610PZ Rev.B

Typical Characteristics T_J= 25°C unless otherwise noted

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.2

0.1

0.05

0.02

0.01

0.1

0.01

1E-3

NOTES:

DUTY FACTOR: D = t /t

PEAK T = P

x Z

x R

+ T

SINGLE PULSE

R_θJA= 156^oC/W

θJA

θJA A

10^-4

10^-3

10^-2

10^-1

10⁰

10¹

10²

10³

t, RECTANGULAR PULSE DURATION (s)

Figure 12. Transient Thermal Response Curve

www.fairchildsemi.com

FDC610PZ Rev.B

TRADEMARKS

The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not

intended to be an exhaustive list of all such trademarks.

ACEx^®

Power247^®

Green FPS™

Green FPS™ e-Series™

GTO™

i-Lo™

IntelliMAX™

ISOPLANAR™

MegaBuck™

MICROCOUPLER™

MicroFET™

SuperSOT™-8

POWEREDGE^®

Power-SPM™

PowerTrench^®

Programmable Active Droop™

QFET^®

Build it Now™

CorePLUS™

CROSSVOLT™

CTL™

SyncFET™

The Power Franchise^®

TinyBoost™

TinyBuck™

TinyLogic^®

TINYOPTO™

TinyPower™

TinyPWM™

TinyWire™

μSerDes™

UHC^®

Current Transfer Logic™

EcoSPARK^®

QS™

QT Optoelectronics™

Quiet Series™

RapidConfigure™

SMART START™

SPM^®

STEALTH™

SuperFET™

Fairchild^®

Fairchild Semiconductor^®

FACT Quiet Series™

FACT^®

MicroPak™

MillerDrive™

Motion-SPM™

OPTOLOGIC^®

FAST^®

OPTOPLANAR^®

FastvCore™

SuperSOT™-3

SuperSOT™-6

UniFET™

VCX™

FPS™

FRFET^®

PDP-SPM™

Power220^®

Global Power Resource^SM

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS

HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE

APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS

PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S

WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR

SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems 2. A critical component in any component of a life support,

which, (a) are intended for surgical implant into the body or

(b) support or sustain life, and (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in a significant injury of the user.

device, or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or In Design

This datasheet contains the design specifications for product

development. Specifications may change in any manner without notice.

Preliminary

First Production

Full Production

Not In Production

This datasheet contains preliminary data; supplementary data will be

published at a later date. Fairchild Semiconductor reserves the right to

make changes at any time without notice to improve design.

No Identification Needed

Obsolete

This datasheet contains final specifications. Fairchild Semiconductor

reserves the right to make changes at any time without notice to improve

design.

This datasheet contains specifications on a product that has been

discontinued by Fairchild Semiconductor. The datasheet is printed for

reference information only.

Rev. I31

www.fairchildsemi.com

FDC610PZ相关文章

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FDC610PZ产品参数

型号:	FDC610PZ
Brand Name：	Fairchild Semiconductor
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Transferred
零件包装代码：	SSOT
包装说明：	SMALL OUTLINE, R-PDSO-G6
针数：	6
制造商包装代码：	6LD, SUPERSOT6, JEDEC MO-193, 1.6MM WIDE
Reach Compliance Code：	compliant
ECCN代码：	EAR99
HTS代码：	8541.29.00.95
风险等级：	3.31
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	30 V
最大漏极电流 (Abs) (ID)：	4.9 A
最大漏极电流 (ID)：	0.0049 A
最大漏源导通电阻：	0.042 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：	190 pF
JESD-30 代码：	R-PDSO-G6
JESD-609代码：	e3
湿度敏感等级：	1
元件数量：	1
端子数量：	6
工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性/信道类型：	P-CHANNEL
最大功率耗散 (Abs)：	1.6 W
认证状态：	Not Qualified
子类别：	Other Transistors
表面贴装：	YES
端子面层：	Matte Tin (Sn)
端子形式：	GULL WING
端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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