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产品型号FDD6637的概述

芯片FDD6637的概述 FDD6637是一款高性能的混合信号集成电路，主要用于无线通信领域，特别是在功率放大器（PA）和线性调制器等应用中。其设计理念是为现代无线电系统提供高效率、高线性度的解决方案，满足快速发展的无线通信需求。作为一种重要的射频（RF）前端器件，FDD6637具有出色的放大性能和低失真特性，使其在不同环境条件下的表现依然稳定。 FDD6637的核心架构采用了先进的工艺技术，确保其在高频信号处理中的优势。该芯片可以广泛应用于4G LTE和5G NR基站设备、无线网络设备，以及其他类似的射频系统。其主要的优点包括低功耗、高集成度和良好的热管理能力，使得开发者可以在多种应用场合中灵活使用这个芯片。芯片FDD6637的详细参数在了解FDD6637的应用之前，首先需要掌握其详细的技术参数。这些参数不仅影响芯片的性能表现，还直接关系到最终产品的质量和可靠性。 1. 频率范围...

产品型号FDD6637的Datasheet PDF文件预览

August 2006

FDD6637

35V P-Channel PowerTrench^ÒMOSFET

General Description

Features

This P-Channel MOSFET has been produced using

Fairchild Semiconductor’s proprietary PowerTrench

technology to deliver low Rdson and optimized Bvdss

capability to offer superior performance benefit in the

applications.

–55 A, –35 V R_DS(ON)= 11.6 mW @ V_GS= –10 V

R_DS(ON)= 18 mW @ V_GS= –4.5 V

High performance trench technology for extremely

low R_DS(ON)

RoHS Compliant

Applications

Inverter

Power Supplies

D-PAK

TO-252

(TO-252)

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

–35

Units

V_{DS(Avalanche)}

V_GSS

Drain-Source Avalanche Voltage (maximum)

Gate-Source Voltage

(Note 4)

–40

±25

I_D

Continuous Drain Current @T_C=25°C

@T_A=25°C

(Note 3)

(Note 1a)

(Note 3)

–55

–13

Pulsed

–100

P_D

Power Dissipation

@T_C=25°C

@T_A=25°C

(Note 1a)

(Note 1b)

3.1

1.3

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

°C/W

Thermal Resistance, Junction-to-Case

(Note 1)

(Note 1a)

(Note 1b)

2.2

R_qJC

R_qJA

Thermal Resistance, Junction-to-Ambient

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

Tape width

12mm

Quantity

FDD6637

D-PAK (TO-252)

13’’

2500 units

www.fairchildsemi.com

Ó2006 Fairchild Semiconductor Corporation

FDD6637 Rev C2(W)

Electrical Characteristics

= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min Typ Max Units

Drain-Source Avalanche Ratings

E_AS

I_AS

Drain-Source Avalanche Energy

(Single Pulse)

V_DD= -35 V, I_D= -11 A, L=1mH

Drain-Source Avalanche Current

–14

Off Characteristics(Note 2)

Drain–Source Breakdown

Voltage

BV_DSS

I_DSS

V_GS= 0 V,

V_DS= –28 V, V_GS= 0 V

V_GS= ±25 V, V_DS= 0 V

I_D= –250 mA

–35

–1

Zero Gate Voltage Drain Current

–1

I_GSS

Gate–Body Leakage

±100

On Characteristics

(Note 2)

V_GS(th)

Gate Threshold Voltage

–1.6

–3

V_DS= V_GS, I_D= –250 mA

9.7

14.4

14.7

11.6

R_DS(on)

Static Drain–Source

On–Resistance

V_GS= –10 V,

V_GS= –4.5 V, I_D= –11 A

V_GS= –10 V, I_D= –14 A, T_J=125°C

I_D= –14 A

g_FS

Forward Transconductance

V_DS=–5 V,

I_D= –14 A

Dynamic Characteristics

C_iss

C_oss

C_rss

Input Capacitance

2370

470

V_DS= –20 V,

f = 1.0 MHz

V _GS= 0 V,

Output Capacitance

Reverse Transfer Capacitance

250

R_G

Gate Resistance

f = 1.0 MHz

3.6

Switching Characteristics (Note 2)

t_d(on)

t_r

t_d(off)

t_f

Turn–On Delay Time

Turn–On Rise Time

V_DD= –20 V,

V_GS= –10 V,

I_D= –1 A,

Turn–Off Delay Time

R_GEN= 6 W

100

Turn–Off Fall Time

Q_g

Q_gs

Q_gd

Total Gate Charge, V_GS= –10V

Total Gate Charge, V_GS= –5V

Gate–Source Charge

Gate–Drain Charge

V_DS= – 20 V, I_D= –14 A

FDD6637 Rev. C2(W)

www.fairchildsemi.com

Electrical Characteristics

= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min Typ Max Units

Drain–Source Diode Characteristics

V_SD

Drain–Source Diode Forward

Voltage

V_GS= 0 V, I_S= –14 A

(Note 2)

–0.8

–1.2

IF = –14 A, diF/dt = 100 A/µs

trr

Diode Reverse Recovery Time

Qrr

Diode Reverse Recovery Charge

Notes:

1. R is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

qJA

the drain pins.

is guaranteed by design while R

is determined by the user's board design.

qCA

qJC

= 40°C/W when mounted on a

= 96°C/W when mounted

qJA

1in²pad of 2 oz copper

on a minimum pad.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300ms, Duty Cycle < 2.0%

P_D

3. Maximum current is calculated as:

R _DS(ON)

where P_Dis maximum power dissipation at T_C= 25°C and R_DS(on)is at T_J(max)and V_GS= 10V. Package current limitation is 21A

4. BV(avalanche) Single-Pulse rating is guaranteed if device is operated within the UIS SOA boundary of the device.

FDD6637 Rev. C2(W)

www.fairchildsemi.com

Typical Characteristics

100

2.4

2.2

V_GS= -3.5V

V_GS= -10V

-6.0V

-5.0V

-4.5V

-4.0V

1.8

1.6

1.4

1.2

-4.0V

-4.5V

-3.5V

-5.0V

-6.0V

-3.0V

-8.0V

-10V

0.8

100

-V_DS, DRAIN-SOURCE VOLTAGE (V)

-I_D, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage

0.05

1.8

I_D= -14A

I_D= -7A

V_GS= -10V

1.6

1.4

1.2

0.04

0.03

0.02

0.01

T_A= 125^oC

T_A= 25^oC

0.8

0.6

-50

-25

100

125

150

T_J, JUNCTION TEMPERATURE (^oC)

-V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with

Temperature

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage

100

1000

V_GS= 0V

V_DS= -5V

100

T_A= -55^oC

125^oC

T_A= 125^oC

25^oC

0.1

-55^oC

0.01

0.001

0.0001

0.2

0.4

0.6

0.8

1.2

1.4

-V_GS, GATE TO SOURCE VOLTAGE (V)

-V_SD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature

FDD6637 Rev. C2(W)

www.fairchildsemi.com

Typical Characteristics

3200

2400

1600

800

I_D= -14A

V_DS= 10V

f = 1MHz

V_GS= 0 V

30V

Ciss

20V

C_oss

C_rss

Q_g, GATE CHARGE (nC)

V_DS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics

Figure 8. Capacitance Characteristics

1000

100

SINGLE PULSE

Rq _JA= 96°C/W

T_A= 25°C

100µs

1ms

10ms

R_DS(ON)LIMIT

100ms

10s

V_GS= -10V

SINGLE PULSE

0.1

0.01

Rq_JA= 96^oC/W

T_A= 25^oC

0.01

0.1

100

1000

100

t₁, TIME (sec)

-V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 9. Maximum Safe Operating Area

Figure 10. Single Pulse Maximum

Power Dissipation

100

1000

100

SINGLE PULSE

Rq _JA= 96°C/W

T_A= 25°C

TJ = 25^oC

0.001

0.01

0.1

0.01

0.1

100

1000

t_AV, TIME IN AVANCHE(ms)

t₁, TIME (sec)

Figure 11. Single Pulse Maximum Peak

Current

Figure 12. Unclamped Inductive

Switching Capability

FDD6637 Rev. C2(W)

www.fairchildsemi.com

Typical Characteristics

D = 0.5

R JA(t) = r(t) * R JA

0.2

R JA = 96 °C/W

0.1

0.01

0.1

0.05

P(pk)

0.02

0.01

TJ - TA = P * R JA(t)

Duty Cycle, D = t₁/ t₂

SINGLE PULSE

0.01

0.001

0.1

100

1000

t₁, TIME (sec)

Figure 13. Transient Thermal Response Curve

Thermal characterization performed using the conditions described in Note 1b.

Transient thermal response will change depending on the circuit board design.

FDD6637 Rev. C2(W)

www.fairchildsemi.com

Test Circuits and Waveforms

BV_DSS

V_DS

t_P

V_DS

V_DD

V_G

R_GEN

I_AS

DUT

V_DD

V_GS

I_AS

vary t_Pto obtain

required peak I_AS

0.01W

t_AV

Figure 14. Unclamped Inductive Load Test

Circuit

Figure 15. Unclamped Inductive Waveforms

Drain Current Regulator

Same type as DUT

Q_G

10V

50kW

10V

10mF

1mF

Q_GD

Q_GS

V_GS

₊V_DD

V_G

DUT

Charge, (nC)

I_g(REF)

Figure 16. Gate Charge Test Circuit

Figure 17. Gate Charge Waveform

t_ON

R_L

t_OFF

V_DS

t_d(ON)

t_d(OFF)

t_f

t_r

V_DS

V_GS

90%

R_GEN

DUT

V_DD

10%

V_GS

Pulse Width £ 1ms

Duty Cycle £ 0.1%

90%

50%

V_GS

50%

Pulse Width

10%

Figure 18. Switching Time Test Circuit

Figure 19. Switching Time Waveforms

FDD6637 Rev. C2(W)

www.fairchildsemi.com

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not

intended to be an exhaustive list of all such trademarks.

ACEx™

FACT Quiet Series™

GlobalOptoisolator™

GTO™

OCX™

OCXPro™

OPTOLOGIC

OPTOPLANAR™

PACMAN™

POP™

Power247™

PowerEdge™

PowerSaver™

SILENT SWITCHER

SMART START™

SPM™

UniFET™

UltraFET

VCX™

ActiveArray™

Bottomless™

Build it Now™

CoolFET™

CROSSVOLT™

DOME™

HiSeC™

Stealth™

Wire™

I C™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

TCM™

TinyBoost™

TinyBuck™

i-Lo™

ImpliedDisconnect™

IntelliMAX™

ISOPLANAR™

LittleFET™

MICROCOUPLER™

MicroFET™

MicroPak™

MICROWIRE™

MSX™

MSXPro™

EcoSPARK™

E CMOS™

EnSigna™

FACT™

PowerTrench

QFET

FAST

QS™

FASTr™

FPS™

FRFET™

QT Optoelectronics™

Quiet Series™

RapidConfigure™

RapidConnect™

μSerDes™

TinyPWM™

TinyPower™

TinyLogic

TINYOPTO™

TruTranslation™

UHC™

Across the board. Around the world.™

The Power Franchise

ScalarPump™

Programmable Active Droop™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS

HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE

APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER

ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S

WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR

SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which,

(a) are intended for surgical implant into the body, or (b) support or

sustain life, or (c) whose failure to perform when properly used in

accordance with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or

system whose failure to perform can be reasonably expected to

cause the failure of the life support device or system, or to affect its

safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Advance Information

Product Status

Definition

Formative or In Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. I20

FDD6637相关文章

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FDD6637产品参数

型号:	FDD6637
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Active
IHS 制造商：	ROCHESTER ELECTRONICS LLC
零件包装代码：	TO-252
包装说明：	ROHS COMPLIANT, DPAK-3
针数：	3
Reach Compliance Code：	unknown
风险等级：	5.36
Is Samacsys：	N
雪崩能效等级（Eas）：	61 mJ
外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	35 V
最大漏极电流 (ID)：	13 A
最大漏源导通电阻：	0.0116 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-252
JESD-30 代码：	R-PSSO-G2
JESD-609代码：	e3
湿度敏感等级：	1
元件数量：	1
端子数量：	2
工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性/信道类型：	P-CHANNEL
最大脉冲漏极电流 (IDM)：	100 A
认证状态：	COMMERCIAL
表面贴装：	YES
端子面层：	MATTE TIN
端子形式：	GULL WING
端子位置：	SINGLE
处于峰值回流温度下的最长时间：	30
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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