FDD6690A各脚功能电路原理芯片引脚定义引脚图及功能IC贸易商-中国IC网-芯三七

当前位置：IC37首页_>F字母起始型号索引_>F字母起始型号索引第292页更新时间：2024-12-03 17:26:02

产品型号FDD6690A的概述

芯片FDD6690A的概述 FDD6690A是一款广泛应用的功率MOSFET（金属氧化物半导体场效应晶体管），主要用于开关电源、电机控制和其他高频应用。作为一种N沟道MOSFET，FDD6690A具有较低的导通电阻和高的开关速度，这使其在各种电力电子设备中成为优选元件。该芯片具备高效率和良好的热特性，适合于现代各种电子产品的需求，尤其是在实现功率控制和信号放大方面，表现出色。芯片FDD6690A的详细参数 FDD6690A的主要电气参数包括： - 最大漏源电压（V_DS）: 30V - 最大漏极电流（I_D）: 50A - 导通电阻（R_DS(on)） : 0.018Ω @ V_GS = 10V - 栅源电压（V_GS）: ±20V （最大） - 功率耗散（P_D）: 80W（在适当的散热条件下） - 工作温度范围: -55°C to +150°C - 开关时间（t_on, t_o...

产品型号FDD6690A的Datasheet PDF文件预览

July 2003

FDD6690A

30V N-Channel PowerTrench^ÒMOSFET

General Description

Features

This N-Channel MOSFET is produced using Fairchild

Semiconductor’s advanced PowerTrench process that

has been especially tailored to minimize the on state

resistance and yet maintain low gate charge for

superior switching performance.

46 A, 30 V

R_DS(ON)= 12 mW @ V_GS= 10 V

R_DS(ON)= 14 mW @ V_GS= 4.5 V

Low gate charge

Fast Switching Speed

Applications

DC/DC converter

Motor Drives

High performance trench technology for extremely

low R_DS(ON)

D-PAK

TO-252

(TO-252)

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

V_GSS

Gate-Source Voltage

Continuous Drain Current @T_C=25°C

@T_A=25°C

±20

I_D

(Note 3)

(Note 1a)

(Note 3)

100

Pulsed

P_D

Power Dissipation

@T_C=25°C

@T_A=25°C

(Note 1a)

(Note 1b)

3.3

1.5

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +175

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Case

(Note 1)

(Note 1a)

(Note 1b)

2.7

R_qJC

R_qJA

°C/W

Thermal Resistance, Junction-to-Ambient

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

Tape width

12mm

Quantity

FDD6690A

D-PAK (TO-252)

13’’

2500 units

FDD6690A Rev EW)

Ó2003 Fairchild Semiconductor Corp.

Electrical Characteristics

T_A= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min Typ Max Units

Drain-Source Avalanche Ratings (Note 2)

E_AS

I_AS

Drain-Source Avalanche Energy

Drain-Source Avalanche Current

Single Pulse, V_DD= 15 V, I_D= 12A

180

Off Characteristics

BV_DSS

Drain–Source Breakdown Voltage

V_GS= 0 V,

I_D= 250 mA

DBVDSS

DT_J

Breakdown Voltage Temperature

Coefficient

I_D= 250 mA,Referenced to 25°C

mV/°C

I_DSS

Zero Gate Voltage Drain Current

Gate–Body Leakage

V_DS= 24 V,

V_GS= 0 V

I_GSS

V_GS= ±20 V, V_DS= 0 V

±100

On Characteristics

(Note 2)

V_GS(th)

Gate Threshold Voltage

1.9

–5

V_DS= V_GS

I_D= 250 mA

Gate Threshold Voltage

Temperature Coefficient

DVGS(th)

DT_J

I_D= 250 mA,Referenced to 25°C

mV/°C

7.7

9.9

11.4

R_DS(on)

Static Drain–Source

On–Resistance

V_GS= 10 V,

V_GS= 4.5 V, I_D= 10 A

V_GS= 10 V, I_D= 12 A,T_J=125°C

I_D= 12 A

I_D(on)

g_FS

On–State Drain Current

V_GS= 10 V,

V_DS= 10 V,

V_DS= 5 V

I_D= 12 A

Forward Transconductance

Dynamic Characteristics

C_iss

C_oss

C_rss

R_G

Input Capacitance

1230

325

150

1.5

V_DS= 15 V,

f = 1.0 MHz

V _GS= 0 V,

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

V_GS= 15 mV, f = 1.0 MHz

Switching Characteristics (Note 2)

t_d(on)

t_r

t_d(off)

t_f

Turn–On Delay Time

Turn–On Rise Time

Turn–Off Delay Time

Turn–Off Fall Time

Total Gate Charge

Gate–Source Charge

Gate–Drain Charge

V_DD= 15 V,

V_GS= 10 V,

I_D= 1 A,

R_GEN= 6 W

3.5

5.1

Q_g

Q_gs

Q_gd

V_DS= 15V,

V_GS= 5 V

I_D= 12 A,

FDD6690A Rev. EW)

Electrical Characteristics

T_A= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min Typ Max Units

Drain–Source Diode Characteristics and Maximum Ratings

I_S

Maximum Continuous Drain–Source Diode Forward Current

2.3

1.2

V_SD

t_rr

Drain–Source Diode Forward Voltage

Diode Reverse Recovery Time

Diode Reverse Recovery Charge

0.76

_GS= 0 V, I_S= 2.3 A

(Note 2)

I_F= 12 A, d_iF/d_t= 100 A/µs

Q_rr

Notes:

1. R_qJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

the drain pins. R_qJCis guaranteed by design while R_qCAis determined by the user's board design.

_qJA= 45°C/W when mounted on a

_qJA= 96°C/W when mounted

1in²pad of 2 oz copper

on a minimum pad.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300ms, Duty Cycle < 2.0%

P_D

3. Maximum current is calculated as:

R_DS(ON)

where P_Dis maximum power dissipation at T_C= 25°C and R_DS(on)is at T_J(max)and V_GS= 10V. Package current limitation is 21A

FDD6690A Rev. EW)

Typical Characteristics

100

1.8

1.6

1.4

1.2

V_GS= 10.0V

6.0V

4.5V

5.0V

V_GS= 3.5V

4.0V

4.5V

3.5V

5.0V

6.0V

10.0V

3.0V

0.8

I_D, DRAIN CURRENT (A)

0.5

1.5

2.5

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage

0.03

1.6

1.4

1.2

I_D= 12A

V_GS= 10V

I_D= 6A

0.025

0.02

T_A= 125^oC

0.015

0.01

T_A= 25^oC

0.8

0.6

0.005

-50

-25

100

125

150

T_J, JUNCTION TEMPERATURE (^oC)

V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation

withTemperature

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage

1000

V_GS= 0V

T_A=-55^oC

V_DS= 5V

100

T_A= 125^oC

125^oC

25^oC

-55^oC

25^oC

0.1

0.01

0.001

0.0001

0.2

0.4

0.6

0.8

1.2

1.4

1.5

2.5

3.5

4.5

V_GS, GATE TO SOURCE VOLTAGE (V)

V_SD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature

FDD6690A Rev. EW)

Typical Characteristics

1800

1500

1200

900

600

300

f = 1MHz

V_GS= 0 V

I_D= 12 A

V_DS= 10V

20V

C_iss

15V

C_oss

C_rss

Q_g, GATE CHARGE (nC)

V_DS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics

Figure 8. Capacitance Characteristics

1000

100

SINGLE PULSE

R_qJA= 96°C/W

R_DS(ON)LIMIT

100µs

T_A= 25°C

1ms

10ms

100ms

V_GS= 4.5V

SINGLE PULSE

_qJA= 96^oC/W

T_A= 25^oC

0.1

0.01

0.1

100

0.01

0.1

100

V_DS, DRAIN-SOURCE VOLTAGE (V)

t₁, TIME (sec)

Figure 9. Maximum Safe Operating Area

Figure 10. Single Pulse Maximum

Power Dissipation

D = 0.5

_qJA(t) = r(t) * R_qJA

0.2

R_q_JA= 96 °C/W

0.1

0.05

0.02

P(pk)

0.01

t₁

t₂

T_J- T_A= P * R_qJA(t)

Duty Cycle, D = t₁/ t₂

SINGLE PULSE

0.001

0.0001

0.001

0.01

0.1

100

1000

t₁, TIME (sec)

Figure 11. Transient Thermal Response Curve

Thermal characterization performed using the conditions described in Note 1b.

Transient thermal response will change depending on the circuit board design.

FDD6690A Rev. EW)

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

ACEx™

Power247™

PowerTrench

QFET

SuperSOT™-6

SuperSOT™-8

SyncFET™

TinyLogic

LittleFET™

MICROCOUPLER™

MicroFET™

MicroPak™

MICROWIRE™

MSX™

MSXPro™

OCX™

OCXPro™

OPTOLOGIC

OPTOPLANAR™

PACMAN™

POP™

FACT Quiet Series™

FAST

FASTr™

FRFET™

GlobalOptoisolator™

GTO™

ActiveArray™

Bottomless™

CoolFET™

CROSSVOLT™

DOME™

EcoSPARK™

E²CMOS^TM

EnSigna^TM

FACT™

QS™

QT Optoelectronics™ TINYOPTO™

Quiet Series™

RapidConfigure™

RapidConnect™

TruTranslation™

UHC™

UltraFET

HiSeC™

I²C™

SILENT SWITCHER VCX™

SMART START™

SPM™

ImpliedDisconnect™

ISOPLANAR™

Across the board. Around the world.™

The Power Franchise™

ProgrammableActive Droop™

Stealth™

SuperSOT™-3

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVESTHE RIGHTTO MAKE CHANGES WITHOUTFURTHER NOTICETOANY

PRODUCTS HEREINTO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOTASSUMEANYLIABILITY

ARISING OUTOFTHEAPPLICATION OR USE OFANYPRODUCTOR CIRCUITDESCRIBED HEREIN; NEITHER DOES IT

CONVEYANYLICENSE UNDER ITS PATENTRIGHTS, NORTHE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or

In Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. I5

FDD6690A相关文章

配单直通车

首天国际（深圳）科技有限公司服务专线: 0755-82807802/82807803 在线联系:

QQ：528164397 复制

QQ：1318502189 复制

北京元坤伟业科技有限公司服务专线: 010-62104931621064316210489162104791 在线联系:

QQ：857273081 复制

QQ：1594462451 复制

深圳市中利达电子科技有限公司服务专线: 0755-13686833545 在线联系:

QQ：1902134819 复制

QQ：2881689472 复制

深圳市芯福林电子有限公司服务专线: 13418564337 在线联系:

QQ：2881495808 复制

QQ：308365177 复制

柒号芯城电子商务（深圳）有限公司服务专线: 18922803401 在线联系:

QQ：2881677436 复制

QQ：2881620402 复制

电子百科

产品导航

产品型号FDD6690A的概述

产品型号FDD6690A的Datasheet PDF文件预览

FDD6690A相关产品

FDD6690A相关文章

IC37:专业IC行业平台