FDMC6675BZ原理图各脚功能电路原理芯片引脚定义引脚图及功能-中国IC网-芯三七

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产品型号FDMC6675BZ的概述

芯片FDMC6675BZ的概述 FDMC6675BZ是一款集成的功率MOSFET，主要用于高效率开关电源和其他需要高效电源管理的应用。这款芯片由著名半导体制造厂商Fairchild Semiconductor（现为ON Semiconductor的一部分）生产，广泛应用于通信、工控、消费电子等领域。 FDMC6675BZ采用的是N沟MOSFET技术，具备出色的电流承载能力和低导通电阻表现，这使得它在高频率和高负载的环境下依然能够有效运行。较低的导通电阻不仅降低了功率损耗，而且帮助提升了系统的整体效率，延长了设备的使用寿命。芯片FDMC6675BZ的详细参数 FDMC6675BZ 的关键参数包括： - 最大漏源电压 (V_DS): 30V - 最大漏电流 (I_D): 75A - 导通电阻 (R_DS(on)): 4.5 mΩ (V_GS = 10V) - 沟道热电阻 (R θJA):...

产品型号FDMC6675BZ的Datasheet PDF文件预览

June 2009

FDMC6675BZ

P-Channel Power Trench^®MOSFET

-30 V, -20 A, 14.4 mΩ

Features

General Description

Max r_DS(on)= 14.4 mΩ at V_GS= -10 V, I_D= -9.5 A

Max r_DS(on)= 27.0 mΩ at V_GS= -4.5 V, I_D= -6.9 A

HBM ESD protection level of 8 kV typical(note 3)

Extended V_GSSrange (-25 V) for battery applications

High performance trench technology for extremely low r_DS(on)

High power and current handling capability

Termination is Lead-free and RoHS Compliant

The FDMC6675BZ has been designed to minimize losses in

load switch applications. Advancements in both silicon and

package technologies have been combined to offer the lowest

r_DS(on)and ESD protection.

Application

Load Switch in Notebook and Server

Notebook Battery Pack Power Management

Bottom

Top

Pin 1

MLP 3.3x3.3

MOSFET Maximum Ratings T_A= 25 °C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

-30

Units

Drain to Source Voltage

Gate to Source Voltage

±25

Drain Current -Continuous (Package limited)

-Continuous (Silicon limited)

-Continuous

T_C= 25 °C

_C= 25 °C

-20

-40

I_D

T_A= 25 °C

(Note 1a)

-9.5

-Pulsed

-32

Power Dissipation

T_C= 25 °C

T_A= 25 °C

P_D

Power Dissipation

2.3

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

3.4

°C/W

(Note 1a)

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

13 ’’

Tape Width

12 mm

Quantity

FDMC6675BZ

MLP 3.3X3.3

3000 units

FDMC6675BZ Rev.D1

www.fairchildsemi.com

Electrical Characteristics T_J= 25 °C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

BV_DSS

Drain to Source Breakdown Voltage

I_D= -250 µA, V_GS= 0 V

-30

∆BV_DSS

∆T_J

Breakdown Voltage Temperature

Coefficient

_D= -250 µA, referenced to 25 °C

mV/°C

-1

_DS= -24 V,

_GS= 0 V

I_DSS

I_GSS

Zero Gate Voltage Drain Current

Gate to Source Leakage Current

µA

T_J= 125 °C

-100

±10

V_GS= ±25 V, V_DS= 0 V

On Characteristics

V_GS(th)

Gate to Source Threshold Voltage

V_GS= V_DS, I_D= -250 µA

-1.0

-1.9

-6

-3.0

∆V_GS(th)

∆T_J

Gate to Source Threshold Voltage

Temperature Coefficient

_D= -250 µA, referenced to 25 °C

_GS= -10 V, I_D= -9.5 A

mV/°C

10.7

17.4

15.2

14.4

27.0

20.5

r_DS(on)

g_FS

Static Drain to Source On Resistance

Forward Transconductance

V_GS= -4.5 V, I_D= -6.9 A

mΩ

V_GS= -10 V, I_D= -9.5 A, T_J= 125 °C

V_DD= -5 V, I_D= -9.5 A

Dynamic Characteristics

C_iss

C_oss

C_rss

Input Capacitance

2154

392

2865

525

V_DS= -15 V, V_GS= 0 V,

f = 1 MHz

Output Capacitance

Reverse Transfer Capacitance

349

525

Switching Characteristics

t_d(on)

t_r

t_d(off)

t_f

Turn-On Delay Time

Rise Time

6.4

V_DD= -15 V, I_D= -9.5 A,

_GS= -10 V, R_GEN= 6 Ω

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate to Source Charge

Gate to Drain “Miller” Charge

V_GS= 0 V to -10 V

V_GS= 0 V to -5 V

Q_g(TOT)

V_DD= -15 V,

_D= -9.5 A

Q_gs

Q_gd

Drain-Source Diode Characteristics

_GS= 0 V, I_S= -9.5 A

(Note 2)

0.89

0.73

1.3

1.2

V_SD

Source to Drain Diode Forward Voltage

V_GS= 0 V, I_S= -1.6 A

t_rr

Reverse Recovery Time

I_F= -9.5 A, di/dt = 100 A/µs

Q_rr

Reverse Recovery Charge

NOTES:

1. R

is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

is guaranteed by design while R is determined by

θCA

θJA

θJC

the user's board design.

b.125 °C/W when mounted on

a minimum pad of 2 oz copper

a. 53 °C/W when mounted on

a 1 in pad of 2 oz copper

2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0 %.

3. The diode connected between the gate and source servers only as protection against ESD. No gate overvoltage rating is implied.

FDMC6675BZ Rev.D1

www.fairchildsemi.com

Typical Characteristics T_J= 25 °C unless otherwise noted

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

V_GS= -4 V

PULSE DURATION = 80 µs

DUTY CYCLE = 0.5%MAX

V_GS= -3.5 V

V_GS= -4.5 V

V_GS= -6 V

V_GS= -10 V

V_GS= -4 V

V_GS= -4.5 V

V_GS= -3.5 V

V_GS= -6 V

PULSE DURATION = 80

DUTY CYCLE = 0.5% MAX

µs

V_GS= -10 V

0.0

0.5

-V_DS

1.0

1.5

2.0

2.5

3.0

-I_D

DRAIN CURRENT (A)

DRAIN TO SOURCE VOLTAGE (V)

Figure2. N o r m a l i z e d O n - R e s i s ta n c e

vs Drain Current and Gate Voltage

Figure 1. On Region Characteristics

1.6

I_D= -9.5 A

_GS= -10 V

PULSE DURATION = 80 µs

DUTY CYCLE = 0.5% MAX

1.4

1.2

1.0

0.8

0.6

I_D= -9.5 A

T_J= 125 ^o

T_J= 25 ^o

-75 -50 -25

T_J

25 50 75 100 125 150

JUNCTION TEMPERATURE ( )

^oC

-V_GS

, GATE TO SOURCE VOLTAGE (V)

Figure4. On-Resistance vs Gate to

Source Voltage

Figure 3. Normalized On Resistance

vs Junction Temperature

100

PULSE DURATION = 80 µs

DUTY CYCLE = 0.5% MAX

V_GS= 0 V

T_J= 150 ^o

V_DS= -5 V

T_J= 25 ^o

T_J= 150 ^oC

T_J= 25 ^o

0.1

T_J= -55 ^o

0.01

0.2

0.4

0.6

0.8

1.0

1.2

-V_SD, BODY DIODE FORWARD VOLTAGE (V)

-V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

Figure6. Source to Drain Diode

Forward Voltage vs Source Current

FDMC6675BZ Rev.D1

www.fairchildsemi.com

Typical Characteristics T_J= 25 °C unless otherwise noted

5000

1000

I_D= -9.5 A

V_DD= -10 V

C_iss

V_DD= -15 V

C_oss

V_DD= -20 V

C_rss

f = 1 MHz

= 0 V

100

0.1

-V_DS, DRAIN TO SOURCE VOLTAGE (V)

Q , GATE CHARGE (nC)

Figure 7. Gate Charge Characteristics

Figure8. C a p a c i t a n c e v s D r a i n

to Source Voltage

V_GS= -10 V

T_J= 25 ^o

V_GS= -4.5 V

T_J= 100 ^o

T_J= 125 ^o

Limited by Package

R_θJC= 3.4 ^oC/W

0.001

0.01

0.1

100

125

^oC

150

t_AV, TIME IN AVALANCHE (ms)

T_C,

CASE TEMPERATURE

(

)

Figure 9. Unclamped Inductive

S w i t c h i n g C a p a b i l i t y

Figure10. Maximum Continuous Drain

Current vs Case Temperature

10^-4

V_GS= 0V

10^-5

10^-6

10^-7

10^-8

10^-9

T_J= 150^oC

1 ms

10 ms

0.1

THIS AREA IS

LIMITED BY r_DS(on)

100 ms

1 s

T_J= 25^oC

SINGLE PULSE

T_J= MAX RATED

R_θ_JA= 125 ^oC/W

10 s

_A= 25 ^oC

0.01

0.1

100

-V_DS, DRAIN to SOURCE VOLTAGE (V)

-V_GS, GATE TO SOURCE VOLTAGE(V)

Figure11. Forward Bias Safe

Operating Area

Figure 12. I_gssvs V_gss

FDMC6675BZ Rev.D1

www.fairchildsemi.com

Typical Characteristics T_J= 25 °C unless otherwise noted

1000

V_GS= -10 V

100

SINGLE PULSE

R_θ_JA= 125 ^oC/W

_A= 25 ^o

0.3

10^-3

10^-2

10^-1

100

1000

t, PULSE WIDTH (sec)

Figure 13. Single Pulse Maximum Power Dissipation

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.2

0.1

0.05

0.02

0.01

0.1

0.01

NOTES:

DUTY FACTOR: D = t /t

SINGLE PULSE

R_θ_JA= 125 ^oC/W

PEAK T = P

x Z

x R

+ T

θJA

θJA A

0.001

10^-3

10^-2

10^-1

100

1000

t, RECTANGULAR PULSE DURATION (sec)

Figure 14. Junction-to-Ambient Transient Thermal Response Curve

FDMC6675BZ Rev.D1

www.fairchildsemi.com

Dimensional Outline and Pad Layout

3.30

0.10 C

3.30

PIN#1 QUADRANT

0.10 C

TOP VIEW

0.8 MAX

RECOMMENDED LAND PATTERN

0.10 C

(0.203)

0.08 C

0.05

0.00

SEATING

PLANE

SIDE VIEW

2.32

2.22

PIN #1 IDENT

^0.7854

0.55

0.45

(4X)

0.350

1.150

R0.150

0.299

2.05

1.95

0.40

0.30

0.65

(8X)

0.10

0.05

C A B

1.95

BOTTOM VIEW

A. DOES NOT CONFORM TO JEDEC

REGISTRATION MO-229

B. DIMENSIONS ARE IN MILLIMETERS.

C. DIMENSIONS AND TOLERANCES PER

ASME Y14.5M, 1994

D. DRAWING FILE NAME : MLP08XREVA

E. LAND PATTERN RECOMMENDATION IS

BASED ON FSC DESIGN ONLY

FDMC6675BZ Rev.D1

www.fairchildsemi.com

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not

intended to be an exhaustive list of all such trademarks.

Auto-SPM™

Build it Now™

CorePLUS™

CorePOWER™

CROSSVOLT™

CTL™

F-PFS™

FRFET

Global Power Resource

Green FPS™

Green FPS™ e-Series™

Gmax™

PowerTrench

PowerXS™

The Power Franchise

Programmable Active Droop™

QFET

TinyBoost™

TinyBuck™

QS™

Quiet Series™

RapidConfigure™

TinyLogic

Current Transfer Logic™

EcoSPARK

GTO™

IntelliMAX™

TINYOPTO™

TinyPower™

TinyPWM™

EfficentMax™

ISOPLANAR™

MegaBuck™

MICROCOUPLER™

MicroFET™

™

EZSWITCH™ *

Saving our world, 1mW /W /kW at a time™

SmartMax™

TinyWire™

™*

TriFault Detect™

TRUECURRENT™*

µSerDes™

SMART START™

MicroPak™

SPM

MillerDrive™

MotionMax™

Motion-SPM™

STEALTH™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SupreMOS™

SyncFET™

Sync-Lock™

®*

Fairchild

Fairchild Semiconductor

FACT Quiet Series™

OPTOLOGIC

UHC

FACT

FAST

OPTOPLANAR

Ultra FRFET™

UniFET™

VCX™

VisualMax™

XS™

FastvCore™

FETBench™

PDP SPM™

Power-SPM™

FlashWriter

FPS™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY

PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY

THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE

EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are

intended for surgical implant into the body or (b) support or sustain life,

and (c) whose failure to perform when properly used in accordance with

instructions for use provided in the labeling, can be reasonably

expected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, or

system whose failure to perform can be reasonably expected to cause

the failure of the life support device or system, or to affect its safety or

effectiveness.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,

www.Fairchildsemi.com, under Sales Support.

Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their

parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed

application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the

proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild

Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild

Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of

up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and

warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is

committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Datasheet contains the design specifications for product development. Specifications

may change in any manner without notice.

Advance Information

Formative / In Design

Datasheet contains preliminary data; supplementary data will be published at a later

date. Fairchild Semiconductor reserves the right to make changes at any time without

notice to improve design.

Preliminary

First Production

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

make changes at any time without notice to improve the design.

No Identification Needed

Obsolete

Full Production

Datasheet contains specifications on a product that is discontinued by Fairchild

Semiconductor. The datasheet is for reference information only.

Not In Production

Rev. I40

www.fairchildsemi.com

FDMC6675BZ Rev.D1

FDMC6675BZ相关文章

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FDMC6675BZ产品参数

型号:	FDMC6675BZ
Brand Name：	Fairchild Semiconductor
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Transferred
IHS 制造商：	FAIRCHILD SEMICONDUCTOR CORP
零件包装代码：	MLP
包装说明：	SMALL OUTLINE, S-PDSO-N5
针数：	8
制造商包装代码：	8LD,MLP,DUAL, 3.3MM SQUARE
Reach Compliance Code：	compliant
ECCN代码：	EAR99
HTS代码：	8541.29.00.95
风险等级：	5.72
Is Samacsys：	N
其他特性：	ULTRA-LOW RESISTANCE
外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	30 V
最大漏极电流 (Abs) (ID)：	40 A
最大漏极电流 (ID)：	9.5 A
最大漏源导通电阻：	0.0144 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	S-PDSO-N5
JESD-609代码：	e4
湿度敏感等级：	1
元件数量：	1
端子数量：	5
工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	SQUARE
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性/信道类型：	P-CHANNEL
最大功率耗散 (Abs)：	36 W
最大脉冲漏极电流 (IDM)：	32 A
认证状态：	Not Qualified
子类别：	Other Transistors
表面贴装：	YES
端子面层：	Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式：	NO LEAD
端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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产品型号FDMC6675BZ的概述

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