FDMC7678各脚功能电路原理芯片引脚定义引脚图及功能IC贸易商-中国IC网-芯三七

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产品型号FDMC7678的概述

芯片FDMC7678的概述在现代电子工程中，功率MOSFET（Metal-Oxide-Semiconductor Field-Effect Transistor）广泛应用于电源管理、高效能开关电路和驱动应用等领域。FDMC7678是一款由Fairchild Semiconductor（现为ON Semiconductor的一部分）推出的N沟道MOSFET，特别设计来满足高频率和高效率应用的要求。FDMC7678以其优良的电气性能和热管理特性，成为许多电子设计工程师首选的功率开关解决方案。 FDMC7678具有较低的导通电阻和短的开关时间，这使其非常适合用于DC-DC转换器、LED驱动、电机控制及其他需要高效功率转换的场合。此外，FDMC7678的出色热性能使其能在高温环境下稳定运行，进一步提高了其在功率电子应用中的可靠性。芯片FDMC7678的详细参数 FDMC7678的详细技术参...

产品型号FDMC7678的Datasheet PDF文件预览

November 2013

FDMC7678

N-Channel Power Trench^®MOSFET

30 V, 19.5 A, 5.3 mΩ

Features

General Description

Max r_DS(on)= 5.3 mΩ at V_GS= 10 V, I_D= 17.5 A

Max r_DS(on)= 6.8 mΩ at V_GS= 4.5 V, I_D= 15.0 A

High performance technology for extremely low r_DS(on)

Termination is Lead-free and RoHS Compliant

This N-Channel MOSFET is produced using Fairchild

Semiconductor’s advanced Power Trench^®process that has

been especially tailored to minimize the on-state resistance. This

device is well suited for Power Management and load switching

applications common in Notebook Computers and Portable

Battery Packs.

Application

DC - DC Buck Converters

Notebook battery power management

Load switch in Notebook

Bottom

D D

Top

G S

Pin 1

MLP 3.3x3.3

MOSFET Maximum Ratings T_A= 25 °C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

±20

(Note 3)

Drain Current -Continuous (Package limited) T_C= 25 °C

19.5

Drain Current -Continuous (Silicon limited)

-Continuous

T_C= 25 °C

I_D

T_A= 25 °C

(Note 1a)

(Note 4)

17.5

-Pulsed

E_AS

Single Pulse Avalanche Energy

Power Dissipation

T_C= 25 °C

T_A= 25 °C

P_D

Power Dissipation

(Note 1a)

2.3

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

4.0

°C/W

(Note 1a)

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

13 ’’

Tape Width

12 mm

Quantity

FDMC7678

MLP 3.3x3.3

3000 units

FDMC7678 Rev. C2

www.fairchildsemi.com

Electrical Characteristics T_J= 25 °C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

BV_DSS

Drain to Source Breakdown Voltage

I_D= 250 μA, V_GS= 0 V

ΔBV_DSS

ΔT_J

Breakdown Voltage Temperature

Coefficient

_D= 250 μA, referenced to 25 °C

mV/°C

I_DSS

I_GSS

Zero Gate Voltage Drain Current

V_DS= 24 V, V_GS= 0 V

μA

Gate to Source Leakage Current, Forward V_GS= 20 V, V_DS= 0 V

100

On Characteristics

V_GS(th)

Gate to Source Threshold Voltage

V_GS= V_DS, I_D= 250 μA

_D= 250 μA, referenced to 25 °C

V_GS= 10 V, I_D= 17.5 A

_GS= 4.5 V, I_D= 15.0 A

1.2

1.5

-5

3.0

ΔV_GS(th)

ΔT_J

Gate to Source Threshold Voltage

Temperature Coefficient

mV/°C

4.2

5.1

5.3

6.8

r_DS(on)

Static Drain to Source On Resistance

Forward Transconductance

mΩ

V_GS= 10 V, I_D= 17.5 A

T_J= 125 °C

5.7

7.2

g_FS

V_DD= 5 V, I_D= 17.5 A

Dynamic Characteristics

C_iss

C_oss

C_rss

R_g

Input Capacitance

1810

620

2410

820

110

2.5

V_DS= 15 V, V_GS= 0 V

f = 1MHz

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

0.7

Switching Characteristics

t_d(on)

t_r

t_d(off)

t_f

Turn-On Delay Time

Rise Time

V_DD= 15 V, I_D= 17.5 A

_GS= 10 V, R_GEN= 6 Ω

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate to Source Charge

Gate to Drain “Miller” Charge

V_GS= 0 V to 10 V

V_GS= 0 V to 4.5 V

4.4

3.9

Q_g(TOT)

V_DD= 15 V

_D= 17.5 A

Q_gs

Q_gd

Drain-Source Diode Characteristics

_GS= 0 V, I_S= 1.9 A

(Note 2)

0.7

0.8

1.2

V_SD

Source to Drain Diode Forward Voltage

V_GS= 0 V, I_S= 17.5 A

t_rr

Reverse Recovery Time

I_F= 17.5 A, di/dt = 100 A/μs

Q_rr

Reverse Recovery Charge

NOTES:

1. R

is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

is guaranteed by design while R is determined by

θCA

θJA

θJC

the user's board design.

b.125 °C/W when mounted on

a minimum pad of 2 oz copper

a. 53 °C/W when mounted on

a 1 in pad of 2 oz copper

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.

3. As an N-ch device, the negative V

rating is for low duty cycle pulse occurence only. No continuous rating is implied.

4. E of 54 mJ is based on starting T = 25 C, L = 0.3 mH, I = 19 A, V = 27 V, V = 10 V.

FDMC7678 Rev. C2

www.fairchildsemi.com

Typical Characteristics T_J= 25°C unless otherwise noted

V_GS= 10 V

V_GS= 6 V

V_GS= 4.5 V

V_GS= 3 V

V_GS= 3.5 V

V_GS= 3 V

V_GS= 3.5 V

V_GS= 4.5 V

V_GS= 6 V

V_GS= 10 V

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

0.0

0.5

1.0

1.5

2.0

I_D, DRAIN CURRENT (A)

V_DS, DRAIN TO SOURCE VOLTAGE (V)

Figure2. N o r m a l i z e d O n - R e s i s ta n c e

vs Drain Current and Gate Voltage

Figure 1. On Region Characteristics

1.5

1.4

1.3

1.2

1.1

1.0

0.9

0.8

0.7

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

I_D= 17.5 A

V_GS= 10 V

I_D= 17.5 A

T_J= 125 ^o

T_J= 25 ^o

-75 -50 -25

25 50 75 100 125 150

T_J, JUNCTION TEMPERATURE (^oC)

V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 3. Normalized On Resistance

vs Junction Temperature

Figure4. On-Resistance vs Gate to

Source Voltage

100

V_GS= 0 V

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

T_J= 150 ^o

V_DS= 5 V

T_J= 25 ^o

T_J= 150 ^o

T_J= 25 ^o

T_J= -55 ^o

0.1

0.01

T_J= -55 ^o

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.0

1.5

2.0

2.5

3.0

3.5

V_SD, BODY DIODE FORWARD VOLTAGE (V)

V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

Figure6. Source to Drain Diode

Forward Voltage vs Source Current

FDMC7678 Rev. C2

www.fairchildsemi.com

Typical Characteristics T_J= 25°C unless otherwise noted

3000

1000

I_D= 17.5 A

V_DD= 10 V

C_iss

V_DD= 15 V

C_oss

V_DD= 20 V

100

f = 1 MHz

= 0 V

C_rss

0.1

V_DS, DRAIN TO SOURCE VOLTAGE (V)

Q_g, GATE CHARGE (nC)

Figure 7. Gate Charge Characteristics

Figure8. C a p a c i t a n c e v s D r a i n

to Source Voltage

_θJC= 4.0 ^oC/W

T_J= 25 ^oC

V_GS= 10 V

V_GS= 4.5 V

T_J= 100 ^oC

T_J= 125 ^o

Limited by Package

0.001

0.01

0.1

100

125

150

T_C, CASE TEMPERATURE (^oC)

t_AV, TIME IN AVALANCHE (ms)

Figure9. U n c l a m p e d I n d u c t i v e

Switching Capability

Figure10. Maximum Continuous Drain

Current vs Case Temperature

100

2000

1000

100

100 μs

1 ms

10 ms

100 ms

1 s

THIS AREA IS

LIMITED BY r

DS(on)

SINGLE PULSE

T_J= MAX RATED

R_θJA= 125 ^oC/W

0.1

0.01

SINGLE PULSE

R_θJA= 125 ^oC/W

T_A= 25 ^oC

10 s

_A= 25 ^oC

0.5

10^-4

10^-3

10^-2

t, PULSE WIDTH (sec)

10^-1

0.01

0.1

100200

100 1000

V_DS, DRAIN to SOURCE VOLTAGE (V)

Figure 11. Forward Bias Safe

Operating Area

Figure12. Single Pulse Maximum

Power Dissipation

FDMC7678 Rev. C2

www.fairchildsemi.com

Typical Characteristics T_J= 25°C unless otherwise noted

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

NOTES:

DUTY FACTOR: D = t /t

_θJA= 125 ^oC/W

PEAK T = P

x Z

x R

+ T

θJA

θJA A

0.001

0.0005

10^-4

10^-3

10^-2

10^-1

t, RECTANGULAR PULSE DURATION (sec)

100

1000

Figure 13. Junction-to-Ambient Transient Thermal Response Curve

FDMC7678 Rev. C2

www.fairchildsemi.com

Dimensional Outline and Pad Layout

(3.40)

2.37

0.10 C

ꢀꢁꢀꢂꢂꢁꢃꢂ

0.45(4X)

(0.40)

2.15

(1.70)

ꢀꢁꢀꢂꢂꢁꢃꢂ

KEEP OUT

AREA

(0.65)

0.70(4X)

PIN1

IDENT

0.42(8X)

0.65

0.10 C

TOP VIEW

1.95

0.8MAX

ꢃꢃ0$;

0.10 C

(0.20)

0.08 C

0.05

0.00

RECOMMENDED LAND PATTERN

SIDE VIEW

NOTES:

SEATING

PLANE

A.EXCEPT AS NOTED, PACKAGE CONFORMS TO

JEDEC REGISTRATION MO-240 VARIATION BA..

B.DIMENSIONS ARE IN MILLIMETERS.

2.27+0.05

C.DIMENSIONS AND TOLERANCES PER

ASME Y14.5M,1994.

D.SEATING PLANE IS DEFINED BY TERMINAL TIPS ONLY

E.BODY DIMENSIONS DO NOT INCLUDE MOLD FLASH

PROTRUSIONS NOR GATEBURRS.

0.45+0.05

(4X)

(0.40)

F.FLANGE DIMENSIONS INCLUDE INTERTERMINAL FLASH

OR PROTRUSION. INTERTERMINAL FLASH OR

PROTRUSION SHALL NOT EXCEED 0.25MM PER SIDE.

G.IT IS RECOMMENDED TO HAVE NO TRACES OR VIA

WITHIN THE KEEP OUT AREA.

H.DRAWING FILENAME: MKT-MLP08Trev3.

I.GENERAL RADII FOR ALL CORNERS SHALL BE 0.20MM

MAX.

(1.20)

2.05+0.05

0.45+0.05

(3X)

J.FAIRCHILD SEMICONDUCTOR.

(8X)

0.32+0.05

0.65

0.10

0.05

C A B

1.95

BOTTOM VIEW

FDMC7678 Rev. C2

www.fairchildsemi.com

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not

intended to be an exhaustive list of all such trademarks.

AccuPower™

AX-CAP *

BitSiC™

Build it Now™

CorePLUS™

CorePOWER™

CROSSVOLT™

CTL™

F-PFS™

FRFET

Sync-Lock™

®*

Global Power Resource^SM

GreenBridge™

Green FPS™

PowerTrench

PowerXS™

Programmable Active Droop™

QFET

QS™

Quiet Series™

RapidConfigure™

™

TinyBoost

TinyBuck

Green FPS™ e-Series™

Gmax™

GTO™

TinyCalc™

TinyLogic

TINYOPTO™

TinyPower™

TinyPWM™

TinyWire™

TranSiC™

TriFault Detect™

Current Transfer Logic™

IntelliMAX™

DEUXPEED

ISOPLANAR™

Marking Small Speakers Sound Louder

and Better™

MegaBuck™

MICROCOUPLER™

MicroFET™

MicroPak™

MicroPak2™

MillerDrive™

MotionMax™

Dual Cool™

EcoSPARK

Saving our world, 1mW/W/kW at a time™

SignalWise™

SmartMax™

EfficentMax™

ESBC™

TRUECURRENT *

μSerDes™

SMART START™

Solutions for Your Success™

SPM

Fairchild

STEALTH™

SuperFET

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

Fairchild Semiconductor

FACT Quiet Series™

UHC

Ultra FRFET™

UniFET™

VCX™

VisualMax™

VoltagePlus™

XS™

mWSaver

OptoHiT™

OPTOLOGIC

OPTOPLANAR

FACT

FAST

FastvCore™

FETBench™

FPS™

SupreMOS

SyncFET™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY

PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY

THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE

EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used here in:

1. Life support devices or systems are devices or systems which, (a) are

intended for surgical implant into the body or (b) support or sustain life,

and (c) whose failure to perform when properly used in accordance with

instructions for use provided in the labeling, can be reasonably

expected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, or

system whose failure to perform can be reasonably expected to cause

the failure of the life support device or system, or to affect its safety or

effectiveness.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,

www.Fairchildsemi.com, under Sales Support.

Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their

parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed

application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the

proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild

Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild

Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of

up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and

warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is

committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Datasheet contains the design specifications for product development. Specifications

may change in any manner without notice.

Advance Information

Formative / In Design

Datasheet contains preliminary data; supplementary data will be published at a later

date. Fairchild Semiconductor reserves the right to make changes at any time without

notice to improve design.

Preliminary

First Production

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

make changes at any time without notice to improve the design.

No Identification Needed

Obsolete

Full Production

Datasheet contains specifications on a product that is discontinued by Fairchild

Semiconductor. The datasheet is for reference information only.

Not In Production

Rev. I66

FDMC7678 Rev. C2

www.fairchildsemi.com

FDMC7678相关文章

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FDMC7678产品参数

型号:	FDMC7678
Brand Name：	Fairchild Semiconductor
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Transferred
IHS 制造商：	FAIRCHILD SEMICONDUCTOR CORP
零件包装代码：	MLP
包装说明：	SMALL OUTLINE, S-PDSO-N5
针数：	8
制造商包装代码：	8LD, MLP, PUNCHED, DUAL, JEDEC MO-240, VARIATION BA, 3.3MM SQUARE
Reach Compliance Code：	compliant
ECCN代码：	EAR99
HTS代码：	8541.29.00.95
风险等级：	5.71
Samacsys Description：	MOSFET PowerTrench N-Ch 30V 19.5A MLP
其他特性：	ULTRA-LOW RESISTANCE
雪崩能效等级（Eas）：	54 mJ
外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	30 V
最大漏极电流 (Abs) (ID)：	19.5 A
最大漏极电流 (ID)：	17.5 A
最大漏源导通电阻：	0.0053 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	MO-240BA
JESD-30 代码：	S-PDSO-N5
JESD-609代码：	e4
湿度敏感等级：	1
元件数量：	1
端子数量：	5
工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	SQUARE
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	31 W
最大脉冲漏极电流 (IDM)：	70 A
认证状态：	Not Qualified
子类别：	FET General Purpose Power
表面贴装：	YES
端子面层：	Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式：	NO LEAD
端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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产品型号FDMC7678的概述

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