FDMC8200各脚功能电路原理芯片引脚定义引脚图及功能IC贸易商-中国IC网-芯三七

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产品型号FDMC8200的概述

芯片FDMC8200的概述 FDMC8200是一款高性能的N沟道场效应晶体管（MOSFET），这款芯片主要用于高频开关电源、电机驱动和其他功率控制应用中。由于其优异的热管理性能和低导通电阻，FDMC8200被广泛应用于各种电子设备中。作为一款具有高效能和高可靠性的功率器件，FDMC8200 在现代电力电子领域中扮演着举足轻重的角色。 FDMC8200具有较高的耐压值和出色的电流承载能力，适合于持续高负载的工作环境。此外，它的型号分类为TO-220封装，使得安装和散热都非常方便。这使得FDMC8200成为多种功率转换器和开关电源设计中的热门选择。芯片FDMC8200的详细参数 FDMC8200的主要电气参数如下： - 器件类型：N通道MOSFET - 最大漏极源极电压 (V_DS)：60V - 最大漏极电流 (I_D)：30A - 导通电阻 (R_DS(on))：约为0.028Ω（在V...

产品型号FDMC8200的Datasheet PDF文件预览

June 2009

FDMC8200

Dual N-Channel PowerTrench^®MOSFET

30 V, 9.5 mΩ and 20 mΩ

Features

General Description

Q1: N-Channel

This device includes two specialized N-Channel MOSFETs in a

dual Power33 (3mm x 3mm MLP) package. The switch node

has been internally connected to enable easy placement and

Max r_DS(on)= 20 mΩ at V_GS= 10 V, I_D= 6 A

Max r_DS(on)= 32 mΩ at V_GS= 4.5 V, I_D= 5 A

routing of synchronous buck converters.

The control

MOSFET (Q1) and synchronous MOSFET (Q2) have been

designed to provide optimal power efficiency.

Q2: N-Channel

Max r_DS(on)= 9.5 mΩ at V_GS= 10 V, I_D= 9 A

Max r_DS(on)= 13.5 mΩ at V_GS= 4.5 V, I_D= 7 A

RoHS Compliant

Applications

Mobile Computing

Mobile Internet Devices

General Purpose Point of Load

Pin 1

D2/S1

BOTTOM

Power 33

MOSFET Maximum Ratings T_C= 25 °C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Units

Drain to Source Voltage

Gate to Source Voltage

(Note 3)

T_C= 25 °C

T_A= 25 °C

±20

Drain Current - Continuous (Package limited)

- Continuous (Silicon limited)

- Continuous

8 ^1a

12 ^1b

I_D

- Pulsed

Power Dissipation

T_A= 25 °C

1.9 ^1a

0.7 ^1c

2.2 ^1b

0.9 ^1d

P_D

Power Dissipation

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R_θJA

R_θJC

Thermal Resistance, Junction to Ambient

65 ^1a

180 ^1c

7.5

55 ^1b

145 ^1d

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

°C/W

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

13 ”

Tape Width

Quantity

FDMC8200

Power 33

12 mm

3000 units

FDMC8200 Rev.A1

www.fairchildsemi.com

Electrical Characteristics T_J= 25 °C unless otherwise noted

Symbol

Parameter

Test Conditions

Type

Min

Typ

Max Units

Off Characteristics

_D= 250 µA, V_GS= 0 V

BV_DSS

Drain to Source Breakdown Voltage

∆BV_DSS

∆T_J

Breakdown Voltage Temperature

Coefficient

I_D= 250 µA, referenced to 25 °C

_D= 250 µA, referenced to 25 °C

mV/°C

_DS= 24 V, V_GS= 0 V

I_DSS

I_GSS

Zero Gate Voltage Drain Current

Gate to Source Leakage Current

µA

100

V_DS= 20 V, V_GS= 0 V

On Characteristics

_GS= V_DS, I_D= 250 µA

1.0

2.3

3.0

V_GS(th)

Gate to Source Threshold Voltage

∆V_GS(th)

∆T_J

Gate to Source Threshold Voltage

Temperature Coefficient

I_D= 250 µA, referenced to 25 °C

_D= 250 µA, referenced to 25 °C

V_GS= 10 V, I_D= 6 A

-5

-6

mV/°C

_GS= 4.5 V, I_D= 5 A

_GS= 10 V, I_D= 6 A, T_J= 125 °C

r_DS(on)

Static Drain to Source On Resistance

mΩ

_GS= 10 V, I_D= 9 A

_GS= 4.5 V, I_D= 7 A

_GS= 10 V, I_D= 9 A, T_J= 125 °C

7.3

9.5

13.5

_DD= 5 V, I_D= 6 A

_DD= 5 V, I_D= 9 A

g_FS

Forward Transconductance

Dynamic Characteristics

495

1180 1570

660

C_iss

C_oss

C_rss

R_g

Input Capacitance

Ω

145

330

195

440

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

V_DS= 15 V, V_GS= 0 V, f = 1 MHZ

1.4

Switching Characteristics

t_d(on)

t_r

t_d(off)

t_f

Turn-On Delay Time

Rise Time

_DD= 15 V, I_D= 1 A,

_GS= 10 V, R_GEN= 6 Ω

3.1

Turn-Off Delay Time

Fall Time

V_DD= 15 V, I_D= 1 A,

1.3

_GS= 10 V, R_GEN= 6 Ω

7.3

Q_g(TOT)

Q_gs

Total Gate Charge

Gate to Source Charge

Gate to Drain “Miller” Charge

V_GS= 0 V to 10 V

V_GS= 0 V to 4.5 V

Q1:

_DD= 15 V,

_D= 6 A,

3.1

4.3

1.8

4.1

Q2:

V_DD= 15 V,

1.5

_D= 9 A,

Q_gd

FDMC8200 Rev.A1

www.fairchildsemi.com

Electrical Characteristics T_J= 25 °C unless otherwise noted

Symbol

Parameter

Test Conditions

Type

Min

Typ

Max Units

Drain-Source Diode Characteristics

Source to Drain Diode Forward Volt- V_GS= 0 V, I_S= 6 A

(Note 2) Q1

(Note 2) Q2

0.8

1.2

V_SD

t_rr

age

_GS= 0 V, I_S= 9 A

1.2

Reverse Recovery Time

I_F= 6 A, di/dt = 100 A/s

I_F= 9 A, di/dt = 100 A/s

2.3

5.6

Q_rr

Reverse Recovery Charge

Notes:

1. R

is determined with the device mounted on a 1in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

is guaranteed by design while R

is determined

θCA

θJA

θJC

by the user's board design.

a.65 °C/W when mounted on

a 1 in pad of 2 oz copper

b.55 °C/W when mounted on

a 1 in pad of 2 oz copper

c. 180 °C/W when mounted on a

minimum pad of 2 oz copper

d. 145 °C/W when mounted on a

minimum pad of 2 oz copper

2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.

3. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.

FDMC8200 Rev.A1

www.fairchildsemi.com

Typical Characteristics (Q1 N-Channel) T_J= 25 °C unless otherwise noted

V_GS= 10 V

V_GS= 6 V

PULSE DURATION = 80

DUTY CYCLE = 0.5% MAX

µs

V_GS= 4.5 V

V_GS= 3.5 V

V_GS= 4 V

V_GS= 4.5 V

PULSE DURATION = 80

DUTY CYCLE = 0.5% MAX

µs

V_GS= 10 V

V_GS= 6 V

V_GS= 3.5 V

0.0

0.5

V_DS

1.0

1.5

2.0

2.5

3.0

I_D

DRAIN CURRENT (A)

DRAIN TO SOURCE VOLTAGE (V)

Figure 1. On Region Characteristics

Figure2. N o r m a l i z e d O n - R e s i s ta n c e

vs Drain Current and Gate Voltage

1.6

100

I_D= 6 A

PULSE DURATION = 80 µs

DUTY CYCLE = 0.5% MAX

V_GS= 10 V

1.4

1.2

1.0

0.8

I_D= 6 A

T_J= 125 ^o

T_J= 25 ^oC

-75 -50 -25

T_J

25 50 75 100 125 150

JUNCTION TEMPERATURE ( )

^oC

V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 3. Normalized On Resistance

vs Junction Temperature

Figure4. On-Resistance vs Gate to

Source Voltage

PULSE DURATION = 80 µs

DUTY CYCLE = 0.5% MAX

V_GS= 0 V

V_DS= 5 V

T_J= 150 ^o

T_J= 150 ^oC

0.1

T_J= 25 ^oC

0.01

0.001

T_J= -55 ^oC

1.0

T_J= -55 ^o

2.0

2.5

3.0

3.5

4.0

4.5

0.2

0.4

0.6

0.8

1.2

V_GS, GATE TO SOURCE VOLTAGE (V)

V_SD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics

Figure6. Source to Drain Diode

Forward Voltage vs Source Current

FDMC8200 Rev.A1

www.fairchildsemi.com

Typical Characteristics (Q1 N-Channel) T_J= 25 °C unless otherwise noted

1000

100

I_D= 6 A

C_iss

V_DD= 20 V

V_DD= 15 V

C_oss

V_DD= 10 V

C_rss

f = 1 MHz

= 0 V

0.1

V_DS, DRAIN TO SOURCE VOLTAGE (V)

Q , GATE CHARGE (nC)

Figure 7. Gate Charge Characteristics

Figure8. C a p a c i t a n c e v s D r a i n

to Source Voltage

100

R_θJC= 7.5 ^oC/W

100 us

V_GS= 10 V

1 ms

10 ms

100 ms

Limited by Package

THIS AREA IS

LIMITED BY r_DS(on)

0.1

1 s

10 s

V_GS= 4.5 V

SINGLE PULSE

T_J= MAX RATED

R_θ_JA= 180 ^oC/W

0.01

0.001

_C= 25 ^oC

100

125

150

0.01

0.1

100200

V_DS, DRAIN to SOURCE VOLTAGE (V)

T_c,

CASE TEMPERATURE ( )

^oC

Figure 9. Forward Bias Safe

Operating Area

Figure 10. Maximum Continuous Drain Current

vs Case Temperature

300

SINGLE PULSE

V_GS= 10 V

R_θ_JA= 180 ^oC/W

100

_A= 25 ^o

0.5

10^-4

10^-3

10^-2

10^-1

100

1000

t, PULSE WIDTH (s)

Figure 11. Single Pulse Maximum Power Dissipation

FDMC8200 Rev.A1

www.fairchildsemi.com

Typical Characteristics (Q1 N-Channel) T_J= 25 °C unless otherwise noted

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.2

0.1

0.05

0.02

0.01

0.1

NOTES:

DUTY FACTOR: D = t /t

SINGLE PULSE

R_θ_JA= 180 ^oC/W

0.01

PEAK T = P

x Z

x R

+ T

θJA

θJA A

0.003

10^-4

10^-3

10^-2

10^-1

t, RECTANGULAR PULSE DURATION (sec)

100

1000

Figure 12. Junction-to-Ambient Transient Thermal Response Curve

FDMC8200 Rev.A1

www.fairchildsemi.com

Typical Characteristics (Q2 N-Channel) T_J= 25 °C unless otherwise noted

V_GS= 10 V

PULSE DURATION = 80 µs

DUTY CYCLE = 0.5% MAX

V_GS= 3 V

V_GS= 4.5 V

V_GS= 4 V

V_GS= 3.5 V

V_GS= 4 V

V_GS= 3.5 V

V_GS= 4.5 V

V_GS= 10 V

PULSE DURATION = 80

DUTY CYCLE = 0.5% MAX

µs

V_GS= 3 V

0.5

0.0

1.0

1.5

2.0

2.5

3.0

I_D

V_DS

DRAIN TO SOURCE VOLTAGE (V)

DRAIN CURRENT (A)

Figure 14. Normalized on-Resistance vs Drain

Current and Gate Voltage

Figure 13. On-Region Characteristics

1.6

I_D= 9 A

_GS= 10 V

PULSE DURATION = 80 µs

DUTY CYCLE = 0.5% MAX

1.4

1.2

1.0

0.8

0.6

I_D= 9 A

T_J= 125 ^o

T_J= 25 ^oC

-75 -50 -25

T_J

25 50 75 100 125 150

JUNCTION TEMPERATURE ( )

^oC

V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 16. On-Resistance vs Gate to

Source Voltage

Figure 15. Normalized On-Resistance

vs Junction Temperature

V_GS= 0 V

PULSE DURATION = 80 µs

DUTY CYCLE = 0.5% MAX

V_DS= 5 V

T_J= 150 ^o

T_J= 25 ^oC

0.1

T_J= 150 ^oC

T_J= 25 ^oC

0.01

0.001

T_J= -55 ^oC

T_J= -55 ^o

1.5

2.0

2.5

3.0

3.5

4.0

0.0

0.2

0.4

0.6

0.8

1.0

1.2

V_GS, GATE TO SOURCE VOLTAGE (V)

V_SD, BODY DIODE FORWARD VOLTAGE (V)

Figure 17. Transfer Characteristics

Figure 18. Source to Drain Diode

Forward Voltage vs Source Current

FDMC8200 Rev.A1

www.fairchildsemi.com

Typical Characteristics (Q2 N-Channel) T_J= 25 °C unless otherwise noted

2000

1000

C_iss

I_D= 9 A

C_oss

V_DD= 15 V

V_DD= 10 V

V_DD= 20 V

100

C_rss

f = 1 MHz

= 0 V

0.1

V_DS, DRAIN TO SOURCE VOLTAGE (V)

Q , GATE CHARGE (nC)

F i g u r e 1 9 . G a t e C h a r g e C h a r a c t e r i s t i c s

F i g u r e 2 0 . C a p a c i t a n c e v s D r a i n

to Source Voltage

100

R_θJC= 4 ^oC/W

V_GS= 10 V

100 us

1 ms

V_GS= 4.5 V

THIS AREA IS

LIMITED BY r_DS(on)

10 ms

100 ms

1 s

SINGLE PULSE

T_J= MAX RATED

R_θ_JA= 145 ^oC/W

0.1

Limited by Package

10 s

_C= 25 ^oC

0.01

0.1

100200

100

125

150

^oC

V_DS, DRAIN to SOURCE VOLTAGE (V)

T_c,

CASE TEMPERATURE ( )

Figure 21. Forward Bias Safe

Operating Area

Figure 22. Maximum Continuous Drain

Current vs Case Temperature

1000

100

SINGLE PULSE

R_θ_JA= 145 ^oC/W

V_GS= 10 V

T_A= 25 ^o

0.5

10^-4

10^-3

10^-2

10^-1

t, PULSE WIDTH (s)

100

1000

Figure 22. Single Pulse Maximum Power Dissipation

FDMC8200 Rev.A1

www.fairchildsemi.com

Typical Characteristics (Q2 N-Channel) T_J= 25 °C unless otherwise noted

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.2

0.1

0.05

0.02

0.01

0.1

0.01

NOTES:

DUTY FACTOR: D = t /t

SINGLE PULSE

R_θ_JA= 145 ^oC/W

x R

PEAK T = P

x Z

+ T

θJA

θJA A

0.001

10^-4

10^-3

10^-2

10^-1

t, RECTANGULAR PULSE DURATION (sec)

100

1000

Figure 23. Junction-to-Ambient Transient Thermal Response Curve

FDMC8200 Rev.A1

www.fairchildsemi.com

Dimensional Outline and Pad Layout

FDMC8200 Rev.A1

www.fairchildsemi.com

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not

intended to be an exhaustive list of all such trademarks.

Auto-SPM™

Build it Now™

CorePLUS™

CorePOWER™

CROSSVOLT™

CTL™

F-PFS™

FRFET

Global Power Resource

Green FPS™

Green FPS™ e-Series™

Gmax™

PowerTrench

PowerXS™

The Power Franchise

Programmable Active Droop™

QFET

TinyBoost™

TinyBuck™

QS™

Quiet Series™

RapidConfigure™

TinyLogic

Current Transfer Logic™

EcoSPARK

GTO™

IntelliMAX™

TINYOPTO™

TinyPower™

TinyPWM™

EfficentMax™

ISOPLANAR™

MegaBuck™

MICROCOUPLER™

MicroFET™

™

EZSWITCH™ *

Saving our world, 1mW /W /kW at a time™

SmartMax™

TinyWire™

™*

TriFault Detect™

TRUECURRENT™*

µSerDes™

SMART START™

MicroPak™

SPM

MillerDrive™

MotionMax™

Motion-SPM™

STEALTH™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SupreMOS™

SyncFET™

Sync-Lock™

®*

Fairchild

Fairchild Semiconductor

FACT Quiet Series™

OPTOLOGIC

UHC

FACT

FAST

OPTOPLANAR

Ultra FRFET™

UniFET™

VCX™

VisualMax™

XS™

FastvCore™

FETBench™

PDP SPM™

Power-SPM™

FlashWriter

FPS™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY

PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY

THEREIN, WHICH COVERS THESE PRODUCTS.

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE

EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are

intended for surgical implant into the body or (b) support or sustain life,

and (c) whose failure to perform when properly used in accordance with

instructions for use provided in the labeling, can be reasonably

expected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, or

system whose failure to perform can be reasonably expected to cause

the failure of the life support device or system, or to affect its safety or

effectiveness.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,

www.Fairchildsemi.com, under Sales Support.

Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their

parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed

application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the

proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild

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committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Datasheet contains the design specifications for product development. Specifications

may change in any manner without notice.

Advance Information

Formative / In Design

Datasheet contains preliminary data; supplementary data will be published at a later

date. Fairchild Semiconductor reserves the right to make changes at any time without

notice to improve design.

Preliminary

First Production

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

make changes at any time without notice to improve the design.

No Identification Needed

Obsolete

Full Production

Datasheet contains specifications on a product that is discontinued by Fairchild

Semiconductor. The datasheet is for reference information only.

Not In Production

Rev. I40

www.fairchildsemi.com

FDMC8200 Rev.A1

FDMC8200相关文章

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FDMC8200产品参数

型号:	FDMC8200
Brand Name：	Fairchild Semiconductor
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Transferred
零件包装代码：	MLP
包装说明：	SMALL OUTLINE, S-PDSO-N8
针数：	8
制造商包装代码：	8 LD, MLP, DUAL, NON JEDEC, 3 MM SQUARE, DUAL DAP
Reach Compliance Code：	compliant
ECCN代码：	EAR99
HTS代码：	8541.29.00.95
风险等级：	4.49
配置：	SERIES, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压：	30 V
最大漏极电流 (Abs) (ID)：	45 A
最大漏极电流 (ID)：	8 A
最大漏源导通电阻：	0.02 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：	30 pF
JESD-30 代码：	S-PDSO-N8
JESD-609代码：	e4
湿度敏感等级：	1
元件数量：	2
端子数量：	8
工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	SQUARE
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	2.2 W
认证状态：	Not Qualified
子类别：	FET General Purpose Power
表面贴装：	YES
端子面层：	Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式：	NO LEAD
端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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产品型号FDMC8200的概述

产品型号FDMC8200的Datasheet PDF文件预览

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