FDMC8854各脚功能电路原理芯片引脚定义引脚图及功能IC贸易商-中国IC网-芯三七

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产品型号FDMC8854的概述

芯片FDMC8854概述 FDMC8854是一款高效的MOSFET驱动器，它在现代电力电子领域中得到了广泛的应用。作为一款N沟道的场效应管，FDMC8854的设计目标是提供卓越的性能以满足各类电子设备的需求，尤其是在开关电源、DC-DC转换器和马达驱动等领域。该芯片以其低导通电阻和快速开关特性著称，能够有效降低热损失和提高系统效率。 FDMC8854的工作电压范围广，适合各种电压等级的应用。其内置的保护特性使得其在极端工作条件下也能保持稳定性，这使得其在工业设备及军事应用中获得了一定的使用地位。此外，该芯片的封装形式为标准的表面贴装封装，便于在各种电路板上集成。 FDMC8854详细参数 FDMC8854的基本参数包括： - 类型：N沟道 MOSFET - 最大额定电压（V_DS）：30V - 最大额定电流（I_D）：40A - 导通电阻（R_DS(on)）：通常为8mΩ（V_GS=1...

产品型号FDMC8854的Datasheet PDF文件预览

February 2007

FDMC8854

N-Channel Power Trench^®MOSFET

30V, 15A, 5.7mΩ

Features

General Description

Max r_DS(on)= 5.7mΩ at V_GS= 10V, I_D= 15A

Max r_DS(on)= 7.6mΩ at V_GS= 4.5V, I_D= 13A

Low Profile - 1mm max in Power 33

RoHS Compliant

This N-Channel MOSFET is

rugged gate version of

Fairchild Semiconductor‘s

advanced Power Trench

process. It has been optimized for power management

applications.

Application

DC - DC Conversion

Bottom

Top

Power 33

MOSFET Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

±20

Drain Current -Continuous (Package limited)

-Continuous (Silicon limited)

-Continuous

T_C= 25°C

_C= 25°C

I_D

T_A= 25°C

(Note 1a)

-Pulsed

Power Dissipation

T_C= 25°C

T_A= 25°C

P_D

Power Dissipation

2.0

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

°C/W

(Note 1a)

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

7’’

Tape Width

8mm

Quantity

FDMC8854

Power 33

3000 units

FDMC8854 Rev.C

www.fairchildsemi.com

Electrical Characteristics T_J= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

BV_DSS

Drain to Source Breakdown Voltage

I_D= 250µA, V_GS= 0V

∆BV_DSS

∆T_J

Breakdown Voltage Temperature

Coefficient

_D= 250µA, referenced to 25°C

mV/°C

I_DSS

I_GSS

Zero Gate Voltage Drain Current

Gate to Source Leakage Current

V_DS= 24V, V_GS= 0V

V_GS= ±20V, V_GS= 0V

µA

±100

On Characteristics (Note 2)

V_GS(th)

Gate to Source Threshold Voltage

V_GS= V_DS, I_D= 250µA

1.9

-6

∆V_GS(th)

∆T_J

Gate to Source Threshold Voltage

Temperature Coefficient

_D= 250µA, referenced to 25°C

_GS= 10V, I_D= 15A

mV/°C

4.4

5.6

6.6

5.7

7.6

9.0

r_DS(on)

g_FS

Static Drain to Source On Resistance

Forward Transconductance

V_GS= 4.5V, I_D= 13A

mΩ

V_GS= 10V, I_D= 15A, T_J= 125°C

V_DS= 5V, I_D= 15A

Dynamic Characteristics

C_iss

C_oss

C_rss

R_g

Input Capacitance

2560

515

290

1.3

3405

685

Ω

V_DS= 10V, V_GS= 0V,

f = 1MHz

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

435

f = 1MHz

Switching Characteristics

t_d(on)

t_r

t_d(off)

t_f

Turn-On Delay Time

Rise Time

V_DD= 10V, I_D= 15A

_GS= 10V, R_GEN= 6Ω

Turn-Off Delay Time

Fall Time

Q_g(TOT)

Q_gs

Q_gd

Total Gate Charge

Gate to Source Gate Charge

Gate to Drain “Miller” Charge

V_DD=10V, I_D= 15A,

_GS= 10V

Drain-Source Diode Characteristics

V_SD

t_rr

Source to Drain Diode Forward Voltage

Reverse Recovery Time

V_GS= 0V, I_S= 15A (Note 2)

0.8

1.3

I_F= 15A, di/dt = 100A/µs

Q_rr

Reverse Recovery Charge

Notes:

is determined with the device mounted on a 1in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

is guaranteed by design while R is determined by

θCA

θJA

θJC

the user's board design.

b. 135°C/W when mounted on

minimum pad of 2 oz copper

a. 60°C/W when mounted on

a 1 in pad of 2 oz copper

2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.

www.fairchildsemi.com

FDMC8854 Rev.C

Typical Characteristics T_J= 25°C unless otherwise noted

3.0

2.5

2.0

1.5

1.0

0.5

180

= 10.0V

PULSE DURATION = 80µs

DUTY CYCLE = 0.5%MAX

=4.5V

150

120

V_GS= 3.5V

= 4.0V

V_GS= 4V

V_GS= 4.5V

= 3.5V

PULSE DURATION = 80µs

DUTY CYCLE = 0.5%MAX

V_GS= 10.0V

120

150

180

I_D, DRAIN CURRENT(A)

V_DS, DRAIN TO SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics

Figure2. N o r m a l i z e d O n - R e s i s ta n c e

vs Drain Current and Gate Voltage

1.8

PULSE DURATION = 80µs

DUTY CYCLE = 0.5%MAX

PULSE DURATION = 80µs

DUTY CYCLE = 0.5%MAX

1.6

1.4

1.2

1.0

0.8

0.6

I_D=15A

=15A

V_GS= 10V

= 125^oC

= 25^oC

-75 -50 -25

25 50 75 100 125 150

T_J, JUNCTION TEMPERATURE (^oC)

V_GS, GATE TO SOURCE VOLTAGE (V)

F i gu re 3 . N orma li zed On - Res is ta nc e

vs Junction Temperature

Figure4. On-Resistance vs Gate to

Source Voltage

100

PULSE DURATION = 80µs

DUTY CYCLE = 0.5%MAX

= 0V

T = 150^oC

= 25^oC

0.1

T = 150^oC

= 25^oC

= -55^oC

0.01

1E-3

= -55^oC

1.5

2.0

2.5

3.0

3.5

4.0

0.0

0.2

0.4

0.6

0.8

1.0

1.2

V_GS, GATE TO SOURCE VOLTAGE (V)

V , BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics

Figure6. Source to Drain Diode

Forward Voltage vs Source Current

www.fairchildsemi.com

FDMC8854 Rev.C

Typical Characteristics T_J= 25°C unless otherwise noted

4000

1000

= 15A

iss

= 5V

= 10V

oss

=15V

rss

f = 1MHz

= 0V

100

0.1

V_DS, DRAIN TO SOURCE VOLTAGE (V)

Q , GATE CHARGE(nC)

Figure 7. Gate Charge Characteristics

Figure8. C a p a c i t a n c e v s D r a i n

to Source Voltage

= 10V

T_J= 25^oC

Package limited

T_J= 125^oC

= 4.5V

θJC

= 3^oC/W

0.01

0.1

100

1000

100

125

150

T_C, CASE TEMPERATURE (^oC)

t_AV, TIME IN AVALANCHE(ms)

Figure9. U n c l a m p e d I n d u c t i v e

Switching Capability

Figure10. Maximum Continuous Drain

Current vs Case Temperature

110000

200

= 25 C

V_GS= 10V

100

FOR TEMPERATURES

ABOVE 25 C DERATE PEAK

1ms

CURRENT AS FOLLOWS:

150 – T

----------------------

I = I

10ms

125

LIMITED

DS(ON)

100ms

SINGLE PULSE

= MAX RATED

0.1

= 135 C/W

θJA

= 25 C

SINGLE PULSE

10⁰10¹

0.01

0.5

10^-3

10^-2

10^-1

10²

10³

0.01

0.1

100

V_DS, DRAIN to SOURCE VOLTAGE (V)

t, PULSE WIDTH (s)

Figure 11. Forward Bias Safe

Operating Area

Figure12. Single Pulse Maximum

Power Dissipation

www.fairchildsemi.com

FDMC8854 Rev.C

Typical Characteristics T_J= 25°C unless otherwise noted

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.2

0.1

0.05

0.02

0.01

0.1

NOTES:

DUTY FACTOR: D = t /t

0.01

PEAK T = P

x Z

x R

+ T

θJA

θJA A

SINGLE PULSE

10^-2

0.004

10^-3

10^-1

10⁰

10¹

10²

10³

t, RECTANGULAR PULSE DURATION (s)

Figure 13. Transient Thermal Response Curve

www.fairchildsemi.com

FDMC8854 Rev.C

www.fairchildsemi.com

FDMC8854 Rev.C

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not

intended to be an exhaustive list of all such trademarks.

ACEx™

FACT Quiet Series™

GlobalOptoisolator™

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POP™

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I²C™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

i-Lo™

ImpliedDisconnect™

IntelliMAX™

ISOPLANAR™

LittleFET™

MICROCOUPLER™

MicroFET™

MicroPak™

MICROWIRE™

MSX™

MSXPro™

Power247™

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Across the board. Around the world.™

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DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO

IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF

ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF

OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE

WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE

EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are

intended for surgical implant into the body, or (b) support or sustain

life, or (c) whose failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be reasonably

expected to result in significant injury to the user.

2. A critical component is any component of a life support device or

system whose failure to perform can be reasonably expected to cause

the failure of the life support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Advance Information

Product Status

Definition

Formative or In

Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. I22

FDMC8854 Rev.C

www.fairchildsemi.com

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产品型号FDMC8854的概述

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