FDMS7680各脚功能电路原理芯片引脚定义引脚图及功能IC贸易商-中国IC网-芯三七

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产品型号FDMS7680的概述

芯片FDMS7680的概述 FDMS7680是一款高性能的N通道MOSFET，广泛应用于多种电子设备中，如电源管理、DC-DC转换器及其他要求高效能的功率控制场合。该芯片设计目的是为了在低电压、高电流的条件下提供卓越的开关性能，满足现代电路对效率和紧凑设计的需求。 FDMS7680具备较低的导通电阻（Rds(on)），从而有效降低了在工作过程中产生的热量。这使得FDMS7680特别适合于需要长时间工作的应用场合，如电动驱动系统和便携式电子设备。此外，它还具有快速的开关特性，可以在高频率下稳定运行。芯片FDMS7680的详细参数 FDMS7680的参数规格如下： - Vds（最大漏极-源极电压）: 30V - Ids（最大漏极电流）: 30A - Rds(on)（导通电阻）: 12mΩ（在Vgs=10V时） - Qg（总门电荷）: 25nC - Tj（结温）: 150°C - 封装类型...

产品型号FDMS7680的Datasheet PDF文件预览

April 2009

FDMS7680

N-Channel PowerTrench^®MOSFET

30 V, 6.9 mΩ

Features

General Description

This N-Channel MOSFET has been designed specifically to

improve the overall efficiency and to minimize switch node

ringing of DC/DC converters using either synchronous or

conventional switching PWM controllers. It has been optimized

for low gate charge, low r_DS(on),fast switching speed and body

diode reverse recovery performance.

Max r_DS(on)= 6.9 mΩ at V_GS= 10 V, I_D= 14 A

Max r_DS(on)= 11 mΩ at V_GS= 4.5 V, I_D= 11 A

Advanced Package and Silicon combination for low r_DS(on)

and high efficiency

Next generation enhanced body diode technology, engineered

for soft recovery.

Applications

IMVP Vcore Switching for Notebook

VRM Vcore Switching for Desktop and Server

OringFET / Load Switch

MSL1 robust package design

100% UIL tested

RoHS Compliant

DC-DC Conversion

Top

Bottom

Pin 1

Power 56

MOSFET Maximum Ratings T_A= 25 °C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

+/-20

Drain Current -Continuous (Package limited)

-Continuous (Silicon limited)

-Continuous

T_C= 25 °C

T_A= 25 °C

I_D

(Note 1a)

(Note 3)

(Note 1a)

-Pulsed

E_AS

Single Pulse Avalanche Energy

Power Dissipation

T_C= 25 °C

T_A= 25 °C

P_D

Power Dissipation

2.5

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

3.7

°C/W

(Note 1a)

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

13 ’’

Tape Width

12 mm

Quantity

FDMS7680

Power 56

3000 units

FDMS7680 Rev.C

www.fairchildsemi.com

Electrical Characteristics T_J= 25 °C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

BV_DSS

Drain to Source Breakdown Voltage

I_D= 250 µA, V_GS= 0 V

∆BV_DSS

∆T_J

Breakdown Voltage Temperature

Coefficient

_D= 250 µA, referenced to 25 °C

mV/°C

I_DSS

I_GSS

Zero Gate Voltage Drain Current

V_DS= 24 V, V_GS= 0 V

µA

Gate to Source Leakage Current, Forward V_GS= 20 V, V_DS= 0 V

100

On Characteristics

V_GS(th)

Gate to Source Threshold Voltage

V_GS= V_DS, I_D= 250 µA

1.25

1.9

3.0

∆V_GS(th)

∆T_J

Gate to Source Threshold Voltage

Temperature Coefficient

I_D= 250 µA, referenced to 25 °C

-6

mV/°C

_GS= 10 V , I_D= 14 A

5.6

8.0

7.3

6.9

r_DS(on)

g_FS

Static Drain to Source On Resistance

Forward Transconductance

V_GS= 4.5 V, I_D= 11 A

mΩ

V_GS= 10 V, I_D= 14 A, T_J= 125 °C

V_DS= 5 V, I_D= 14 A

10.1

Dynamic Characteristics

C_iss

C_oss

C_rss

R_g

Input Capacitance

1390

430

1850

575

Ω

_DS= 15 V, V_GS= 0 V,

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

f = 1 MHz

0.9

2.0

Switching Characteristics

t_d(on)

t_r

t_d(off)

t_f

Turn-On Delay Time

Rise Time

_DD= 15 V, I_D= 14 A,

V_GS= 10 V, R_GEN= 6 Ω

Turn-Off Delay Time

Fall Time

Q_g

Total Gate Charge

Gate to Source Charge

Gate to Drain “Miller” Charge

V_GS= 0 V to 10 V

Q_g

V_GS= 0 V to 4.5 V

_DD= 15 V,

I_D= 14 A

Q_gs

Q_gd

4.6

2.3

Drain-Source Diode Characteristics

_GS= 0 V, I_S= 2.1 A

(Note 2)

0.74

0.83

1.2

1.3

V_SD

Source to Drain Diode Forward Voltage

V_GS= 0 V, I_S= 14 A

t_rr

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Time

Reverse Recovery Charge

I_F= 14 A, di/dt = 100 A/µs

Q_rr

t_rr

I_F= 14 A, di/dt = 300 A/µs

Q_rr

Notes:

1. R

is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

is guaranteed by design while R is determined by

θCA

θJA

θJC

the user's board design.

a. 50 °C/W when mounted on a

b. 125 °C/W when mounted on a

minimum pad of 2 oz copper.

1 in pad of 2 oz copper.

2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.

3. Starting T = 25 °C, L = 0.3 mH, I = 14 A, V = 27 V, V = 10 V.

www.fairchildsemi.com

FDMS7680 Rev.C

Typical Characteristics T_J= 25 °C unless otherwise noted

V_GS= 10 V

PULSE DURATION = 80 µs

DUTY CYCLE = 0.5% MAX

V_GS= 3 V

V_GS= 4.5 V

V_GS= 4 V

V_GS= 3.5 V

V_GS= 4 V

PULSE DURATION = 80 µs

DUTY CYCLE = 0.5% MAX

V_GS= 3 V

V_GS= 4.5 V V_GS= 10 V

I_D

V_DS

DRAIN TO SOURCE VOLTAGE (V)

DRAIN CURRENT (A)

Figure 1. On Region Characteristics

Figure2. N o r m a l i z e d O n - R e s i s ta n c e

vs Drain Current and Gate Voltage

1.6

PULSE DURATION = 80

I_D= 14 A

µs

I_D= 14 A

_GS= 10 V

1.5

1.4

1.3

1.2

1.1

1.0

0.9

0.8

0.7

DUTY CYCLE = 0.5% MAX

T_J= 125 ^o

T_J= 25 ^o

-75 -50 -25

T_J

25 50 75 100 125 150

JUNCTION TEMPERATURE ( )

^oC

V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 3. Normalized On Resistance

vs Junction Temperature

Figure4. On-Resistance vs Gate to

Source Voltage

100

V_GS= 0 V

PULSE DURATION = 80 µs

DUTY CYCLE = 0.5% MAX

T_J= 150 ^o

V_DS= 5 V

T_J= 150 ^o

T_J= 25 ^oC

T_J= 25 ^o

0.1

T_J= -55 ^o

0.01

0.2

0.4

0.6

0.8

1.0

1.2

V_GS, GATE TO SOURCE VOLTAGE (V)

V_SD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics

Figure6. Source to Drain Diode

Forward Voltage vs Source Current

www.fairchildsemi.com

FDMS7680 Rev.C

Typical Characteristics T_J= 25 °C unless otherwise noted

3000

1000

V_DD= 15 V

I_D= 14 A

C_iss

V_DD= 10 V

C_oss

V_DD= 20 V

100

C_rss

f = 1 MHz

= 0 V

0.1

V_DS, DRAIN TO SOURCE VOLTAGE (V)

Q_g, GATE CHARGE (nC)

Figure 7. Gate Charge Characteristics

Figure8. C a p a c i t a n c e v s D r a i n

to Source Voltage

T_J= 25 ^o

T_J= 100 ^o

V_GS= 10 V

T_J= 125 ^o

Limited by Package

R_θJC= 3.7 ^oC/W

V_GS= 4.5 V

0.001

0.01

0.1

100

125

150

^oC

t_AV, TIME IN AVALANCHE (ms)

T_C,

CASE TEMPERATURE ( )

Figure9. U n c l a m p e d I n d u c t i v e

Switching Capability

Figure10. Maximum Continuous Drain

Current vs Case Temperature

100

1000

SINGLE PULSE

R_θ_JA= 125 ^oC/W

V_GS= 10 V

100 us

1 ms

_C= 25 ^oC

100

10 ms

THIS AREA IS

100 ms

LIMITED BY r

DS(on)

1 s

SINGLE PULSE

T_J= MAX RATED

R_θ_JA= 125 ^oC/W

0.1

10 s

_C= 25 ^oC

0.01

0.5

10^-4

10^-3

10^-2

t, PULSE WIDTH (sec)

10^-1

200

0.01

0.1

100

100 1000

V_DS, DRAIN to SOURCE VOLTAGE (V)

Figure 11. Forward Bias Safe

Operating Area

Figure12. Single Pulse Maximum

Power Dissipation

www.fairchildsemi.com

FDMS7680 Rev.C

Typical Characteristics T_J= 25 °C unless otherwise noted

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.2

0.1

0.05

0.02

0.01

0.1

0.01

NOTES:

DUTY FACTOR: D = t /t

SINGLE PULSE

R_θ_JA= 125 ^oC/W

PEAK T = P

x Z

x R

+ T

θJA

θJA A

0.001

10^-4

10^-3

10^-2

10^-1

t, RECTANGULAR PULSE DURATION (sec)

100

1000

Figure 13. Junction-to-Ambient Transient Thermal Response Curve

Figure 15.

di/dt = 300 A/µs

-4

100

120

TIME (ns)

Figure 14. Body Diode Reverse Recovery

Characteristics

www.fairchildsemi.com

FDMS7680 Rev.C

Dimensional Outline and Pad Layout

FDMS7680 Rev.C

www.fairchildsemi.com

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not

intended to be an exhaustive list of all such trademarks.

Build it Now™

CorePLUS™

FRFET

Programmable Active Droop™

QFET

QS™

Quiet Series™

RapidConfigure™

Global Power Resource

Green FPS™

TinyBoost™

TinyBuck™

CorePOWER™

CROSSVOLT™

CTL™

Green FPS™ e-Series™

GTO™

TinyLogic

Current Transfer Logic™

EcoSPARK

EfficentMax™

IntelliMAX™

ISOPLANAR™

MegaBuck™

MICROCOUPLER™

MicroFET™

MicroPak™

MillerDrive™

MotionMax™

Motion-SPM™

TINYOPTO™

TinyPower™

TinyPWM™

TinyWire™

TriFault Detect™

µSerDes™

™

Saving our world, 1mW /W /kW at a time™

SmartMax™

EZSWITCH™ *

™

SMART START™

SPM

STEALTH™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SupreMOS™

SyncFET™

Fairchild

Fairchild Semiconductor

FACT Quiet Series™

UHC

OPTOLOGIC

Ultra FRFET™

UniFET™

VCX™

VisualMax™

XS™

OPTOPLANAR

FACT

FAST

FastvCore™

PDP SPM™

Power-SPM™

PowerTrench

PowerXS™

FlashWriter

FPS™

The Power Franchise

F-PFS™

* EZSWITCH™ and FlashWriter are trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY

PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY

THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE

EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are

intended for surgical implant into the body or (b) support or sustain life,

and (c) whose failure to perform when properly used in accordance with

instructions for use provided in the labeling, can be reasonably

expected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, or

system whose failure to perform can be reasonably expected to cause

the failure of the life support device or system, or to affect its safety or

effectiveness.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Farichild’s Anti-Counterfeiting Policy is also stated on our external website,

www.fairchildsemi.com, under Sales Support.

Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their

parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed

application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the

proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild

Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild

Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Farichild’s full range of

up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and

warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is

committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Datasheet contains the design specifications for product development. Specifications

may change in any manner without notice.

Advance Information

Formative / In Design

Datasheet contains preliminary data; supplementary data will be published at a later

date. Fairchild Semiconductor reserves the right to make changes at any time without

notice to improve design.

Preliminary

First Production

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

make changes at any time without notice to improve the design.

No Identification Needed

Obsolete

Full Production

Datasheet contains specifications on a product that is discontinued by Fairchild

Semiconductor. The datasheet is for reference information only.

Not In Production

Rev. I38

FDMS7680 Rev.C

www.fairchildsemi.com

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FDMS7680产品参数

型号:	FDMS7680
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Active
IHS 制造商：	ROCHESTER ELECTRONICS LLC
包装说明：	ROHS COMPLIANT, POWER 56, 8 PIN
针数：	240
Reach Compliance Code：	unknown
风险等级：	5.36
Is Samacsys：	N
雪崩能效等级（Eas）：	29 mJ
外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	30 V
最大漏极电流 (ID)：	14 A
最大漏源导通电阻：	0.0069 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	MO-240AA
JESD-30 代码：	R-PDSO-N5
JESD-609代码：	e3
湿度敏感等级：	1
元件数量：	1
端子数量：	5
工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性/信道类型：	N-CHANNEL
最大脉冲漏极电流 (IDM)：	80 A
认证状态：	COMMERCIAL
表面贴装：	YES
端子面层：	MATTE TIN
端子形式：	NO LEAD
端子位置：	DUAL
处于峰值回流温度下的最长时间：	30
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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