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  • FDMS7698图
  • 深圳市芯脉实业有限公司

     该会员已使用本站11年以上
  • FDMS7698 现货库存
  • 数量26800 
  • 厂家on 
  • 封装PQFN-8 
  • 批号22+ 
  • 新到现货、一手货源、当天发货、bom配单
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  • FDMS7698图
  • 深圳市芯脉实业有限公司

     该会员已使用本站11年以上
  • FDMS7698 现货库存
  • 数量6980 
  • 厂家FAIRCHILD 
  • 封装QFN8 
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  • FDMS7698图
  • 深圳市正纳电子有限公司

     该会员已使用本站15年以上
  • FDMS7698
  • 数量26700 
  • 厂家Fairchild(飞兆/仙童) 
  • 封装▊原厂封装▊ 
  • 批号▊ROHS环保▊ 
  • 十年以上分销商原装进口件服务型企业0755-83790645
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  • FDMS7698图
  • 现代芯城(深圳)科技有限公司

     该会员已使用本站15年以上
  • FDMS7698
  • 数量58000 
  • 厂家一级代理 
  • 封装一级代理 
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  • FDMS7698图
  • 深圳市得捷芯城科技有限公司

     该会员已使用本站11年以上
  • FDMS7698
  • 数量56 
  • 厂家FAIRCHILD/仙童 
  • 封装NA/ 
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  • FDMS7698图
  • 深圳市能元时代电子有限公司

     该会员已使用本站10年以上
  • FDMS7698
  • 数量38000 
  • 厂家FAIRCHILD 
  • 封装QFN 
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  • FDMS7698图
  • 集好芯城

     该会员已使用本站13年以上
  • FDMS7698
  • 数量15481 
  • 厂家FAIRCHILD/仙童 
  • 封装QFN8 
  • 批号最新批次 
  • 原装原厂 现货现卖
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  • FDMS7698图
  • 深圳市欧昇科技有限公司

     该会员已使用本站10年以上
  • FDMS7698
  • 数量36000 
  • 厂家ON/安森美 
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  • FDMS7698图
  • 深圳市晶美隆科技有限公司

     该会员已使用本站14年以上
  • FDMS7698
  • 数量12736 
  • 厂家
  • 封装QFN 
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  • FDMS7698图
  • 深圳市晶美隆科技有限公司

     该会员已使用本站14年以上
  • FDMS7698
  • 数量13850 
  • 厂家FAIRCHILD/仙童 
  • 封装QFN 
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  • FDMS7698图
  • 深圳市恒益昌科技有限公司

     该会员已使用本站6年以上
  • FDMS7698
  • 数量5680 
  • 厂家FAIRCHILD 
  • 封装SOP8 
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  • 原装正品长期供货
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  • 0755-82723761 QQ:3336148967QQ:974337758
  • FDMS7698图
  • 深圳市拓亿芯电子有限公司

     该会员已使用本站12年以上
  • FDMS7698
  • 数量9800 
  • 厂家FAIRCHILD/仙童 
  • 封装QFN 
  • 批号23+ 
  • 进口原装原盘原标签假一赔十
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  • FDMS7698图
  • 深圳市得捷芯城科技有限公司

     该会员已使用本站11年以上
  • FDMS7698
  • 数量13048 
  • 厂家ON/安森美 
  • 封装POWER56 
  • 批号23+ 
  • 原厂可订货,技术支持,直接渠道。可签保供合同
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  • FDMS7698图
  • 深圳市恒达亿科技有限公司

     该会员已使用本站16年以上
  • FDMS7698
  • 数量5680 
  • 厂家FAIRCHILD 
  • 封装SOP8 
  • 批号23+ 
  • 原装正品特价销售
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  • FDMS7698图
  • 深圳市毅创腾电子科技有限公司

     该会员已使用本站16年以上
  • FDMS7698
  • 数量59194 
  • 厂家ON 
  • 封装Power-56-8 
  • 批号22+ 
  • ★只做原装★正品现货★原盒原标★
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  • FDMS7698图
  • 深圳市芯福林电子有限公司

     该会员已使用本站15年以上
  • FDMS7698
  • 数量85000 
  • 厂家ON 
  • 封装QFN 
  • 批号23+ 
  • 真实库存全新原装正品!代理此型号
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  • FDMS7698图
  • 深圳市华斯顿电子科技有限公司

     该会员已使用本站16年以上
  • FDMS7698
  • 数量60849 
  • 厂家FSC 
  • 封装QFN 
  • 批号2023+ 
  • 绝对原装全新正品现货/优势渠道商、原盘原包原盒
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  • FDMS7698图
  • 深圳市宏捷佳电子科技有限公司

     该会员已使用本站12年以上
  • FDMS7698
  • 数量12300 
  • 厂家FAIRCHILD/仙童 
  • 封装SOP8 
  • 批号24+ 
  • ★原装真实库存★13点税!
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  • FDMS7698图
  • 上海磐岳电子有限公司

     该会员已使用本站11年以上
  • FDMS7698
  • 数量5800 
  • 厂家FAI 
  • 封装PQFN 
  • 批号2024+ 
  • 全新原装现货,杜绝假货。
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  • FDMS7698图
  • 北京齐天芯科技有限公司

     该会员已使用本站15年以上
  • FDMS7698
  • 数量6000 
  • 厂家有30000个FAIRCHILD 
  • 封装DFN56 
  • 批号2024+ 
  • 原装正品,假一罚十
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  • FDMS7698图
  • 深圳市惊羽科技有限公司

     该会员已使用本站11年以上
  • FDMS7698
  • 数量83500 
  • 厂家ON-安森美 
  • 封装QFN-8.车规 
  • 批号▉▉:2年内 
  • ▉▉¥10一一有问必回一一有长期订货一备货HK仓库
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  • FDMS7698图
  • 深圳市正信鑫科技有限公司

     该会员已使用本站12年以上
  • FDMS7698
  • 数量3380 
  • 厂家Fairchild 
  • 封装原厂封装 
  • 批号22+ 
  • 原装正品★真实库存★价格优势★欢迎来电洽谈
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  • 0755-22655674 QQ:1686616797QQ:2440138151
  • FDMS7698图
  • 深圳市惊羽科技有限公司

     该会员已使用本站11年以上
  • FDMS7698
  • 数量36218 
  • 厂家ON-安森美 
  • 封装QFN-8.贴片 
  • 批号▉▉:2年内 
  • ▉▉¥1.1元一有问必回一有长期订货一备货HK仓库
  • QQ:43871025QQ:43871025 复制
  • 131-4700-5145---Q-微-恭-候---有-问-秒-回 QQ:43871025
  • FDMS7698图
  • 深圳市芯福林电子有限公司

     该会员已使用本站15年以上
  • FDMS7698
  • 数量56000 
  • 厂家FSC 
  • 封装QFN 
  • 批号23+ 
  • 真实库存全新原装正品!代理此型号
  • QQ:2881495751QQ:2881495751 复制
  • 0755-88917743 QQ:2881495751
  • FDMS7698图
  • 深圳市美思瑞电子科技有限公司

     该会员已使用本站12年以上
  • FDMS7698
  • 数量12245 
  • 厂家FAIRCHILD/仙童 
  • 封装QFN8 
  • 批号22+ 
  • 现货,原厂原装假一罚十!
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  • FDMS7698图
  • 深圳市华斯顿电子科技有限公司

     该会员已使用本站16年以上
  • FDMS7698
  • 数量13500 
  • 厂家Fairchild 
  • 封装REEL 
  • 批号2023+ 
  • 绝对原装正品现货/优势渠道商、原盘原包原盒
  • QQ:1002316308QQ:1002316308 复制
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  • 深圳分公司0755-83777708“进口原装正品专供” QQ:1002316308QQ:515102657
  • FDMS7698图
  • 深圳市硅诺电子科技有限公司

     该会员已使用本站8年以上
  • FDMS7698
  • 数量40978 
  • 厂家FAIRCHILD 
  • 封装QFN 
  • 批号17+ 
  • 原厂指定分销商,有意请来电或QQ洽谈
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  • FDMS7698图
  • 深圳市拓亿芯电子有限公司

     该会员已使用本站12年以上
  • FDMS7698
  • 数量30000 
  • 厂家FAIRCHILD/仙童 
  • 封装QFN 
  • 批号23+ 
  • 代理全新原装现货,价格优势
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  • 0755-82777855 QQ:1774550803QQ:2924695115
  • FDMS7698图
  • 深圳市一呈科技有限公司

     该会员已使用本站9年以上
  • FDMS7698
  • 数量50 
  • 厂家onsemi(安森美) 
  • 封装PQFN-8(4.9x5.8) 
  • 批号23+ 
  • ▉原装正品▉低价力挺实单全系列可订!
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  • FDMS7698图
  • 深圳市恒佳微电子有限公司

     该会员已使用本站12年以上
  • FDMS7698
  • 数量
  • 厂家2460 
  • 封装QFN 
  • 批号 
  • 正品原装 支持最低价
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  • FDMS7698 MOS(场效应管)图
  • 深圳市羿芯诚电子有限公司

     该会员已使用本站7年以上
  • FDMS7698 MOS(场效应管)
  • 数量8500 
  • 厂家原厂品牌 
  • 封装原厂封装 
  • 批号新年份 
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  • FDMS7698图
  • 深圳市和谐世家电子有限公司

     该会员已使用本站13年以上
  • FDMS7698
  • 数量1580 
  • 厂家ON Semiconductor 
  • 封装8-PQFN(5x6) 
  • 批号最新批号 
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  • FDMS7698图
  • 深圳市聚利源实业有限公司

     该会员已使用本站1年以上
  • FDMS7698
  • 数量689 
  • 厂家FAIRCHILD/仙童 
  • 封装QFN 
  • 批号1303+ 
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  • FDMS7698图
  • 深圳市羿芯诚电子有限公司

     该会员已使用本站7年以上
  • FDMS7698
  • 数量300 
  • 厂家FAIRCHILD/仙童 
  • 封装QFN8 
  • 批号21+ 
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  • FDMS7698图
  • 深圳市芯脉实业有限公司

     该会员已使用本站11年以上
  • FDMS7698
  • 数量26800 
  • 厂家on 
  • 封装PQFN-8 
  • 批号22+ 
  • 新到现货、一手货源、当天发货、bom配单
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  • FDMS7698图
  • 长荣电子

     该会员已使用本站14年以上
  • FDMS7698
  • 数量440 
  • 厂家 
  • 封装QFN 
  • 批号14+ 
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  • 深圳市芯柏然科技有限公司

     该会员已使用本站7年以上
  • FDMS7698
  • 数量26800 
  • 厂家on 
  • 封装PQFN-8 
  • 批号22+ 
  • 授权代理直销,原厂原装现货,假一罚十,特价销售
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产品型号FDMS7698的概述

芯片FDMS7698的概述 FDMS7698 是由 Fairchild Semiconductor 设计和制造的一款高性能功率 MOSFET(金属氧化物半导体场效应晶体管),广泛应用于各种电源管理和高频开关应用。该芯片具备低导通电阻、高耐压和快速开关特性,适用于 DC-DC 转换器、马达驱动器和其他需要高效电源转换的场合。 FDMS7698 是 N 通道 MOSFET,可承受较高的电压和电流,能够在高频环境下稳定工作。随着电子设备对高效率和低发热量的需求日益增长,FDMS7698 被越来越多地应用于现代电子设计中。 FDMS7698的详细参数 FDMS7698 的主要技术参数如下: 1. 工作电压(VDS):最高可以承受 30V 的电压。 2. 漏极电流(ID):在高温环境下可承载的最大漏极电流为 25A。 3. 导通电阻(RDS(on)):在 VGS = 10V 的条件下,导通电阻约...

产品型号FDMS7698的Datasheet PDF文件预览

May 2011  
FDMS7698  
N-Channel PowerTrench® MOSFET  
30 V, 22 A, 10 mΩ  
Features  
General Description  
„ Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 13.5 A  
„ Max rDS(on) = 15 mΩ at VGS = 4.5 V, ID = 11.0 A  
This N-Channel MOSFET has been designed specifically to  
improve the overall efficiency and to minimize switch node  
ringing of DC/DC converters using either synchronous or  
conventional switching PWM controllers. It has been optimized  
for low gate charge, low rDS(on), fast switching speed and body  
diode reverse recovery performance.  
„ Advanced Package and Silicon combination for low rDS(on)  
and high efficiency  
„ Next generation enhanced body diode technology,  
engineered for soft recovery  
Applications  
„ MSL1 robust package design  
„ 100% UIL tested  
„ IMVP Vcore Switching for Notebook  
„ VRM Vcore Switching for Desktop and server  
„ OringFET / Load Switching  
„ RoHS Compliant  
„ DC-DC Conversion  
Top  
Bottom  
Pin 1  
S
G
S
S
S
D
D
D
D
5
6
7
8
4
3
S
S
G
2
1
D
D
D
D
Power 56  
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted  
Symbol  
VDS  
VGS  
Parameter  
Ratings  
Units  
Drain to Source Voltage  
Gate to Source Voltage  
30  
V
V
(Note 4)  
±20  
Drain Current -Continuous (Package limited)  
-Continuous (Silicon limited)  
-Continuous  
TC = 25 °C  
C = 25 °C  
22  
T
44  
ID  
A
TA = 25 °C  
(Note 1a)  
(Note 3)  
(Note 1a)  
13.5  
-Pulsed  
50  
EAS  
Single Pulse Avalanche Energy  
Power Dissipation  
29  
29  
mJ  
W
TC = 25 °C  
TA = 25 °C  
PD  
Power Dissipation  
2.5  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
Thermal Characteristics  
RθJC  
RθJA  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
4.4  
50  
°C/W  
(Note 1a)  
Package Marking and Ordering Information  
Device Marking  
Device  
Package  
Reel Size  
13 ’’  
Tape Width  
12 mm  
Quantity  
FDMS7698  
FDMS7698  
Power 56  
3000 units  
1
©2011 Fairchild Semiconductor Corporation  
FDMS7698 Rev.C1  
www.fairchildsemi.com  
Electrical Characteristics TJ = 25 °C unless otherwise noted  
Symbol  
Parameter  
Test Conditions  
Min  
Typ  
Max  
Units  
Off Characteristics  
BVDSS  
Drain to Source Breakdown Voltage  
ID = 250 μA, VGS = 0 V  
30  
V
ΔBVDSS  
ΔTJ  
Breakdown Voltage Temperature  
Coefficient  
I
D = 250 μA, referenced to 25 °C  
16  
mV/°C  
IDSS  
IGSS  
Zero Gate Voltage Drain Current  
VDS = 24 V, VGS = 0 V  
1
μA  
Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V  
100  
nA  
On Characteristics  
VGS(th)  
Gate to Source Threshold Voltage  
VGS = VDS, ID = 250 μA  
D = 250 μA, referenced to 25 °C  
VGS = 10 V, ID = 13.5 A  
GS = 4.5 V, ID = 11.0 A  
1.0  
2.0  
-6  
3.0  
V
ΔVGS(th)  
ΔTJ  
Gate to Source Threshold Voltage  
Temperature Coefficient  
I
mV/°C  
8.1  
10  
15  
V
12.2  
rDS(on)  
Static Drain to Source On Resistance  
Forward Transconductance  
mΩ  
VGS = 10 V, ID = 13.5 A  
TJ = 125 °C  
11  
53  
14  
gFS  
VDS = 5 V, ID = 13.5 A  
S
Dynamic Characteristics  
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
1205  
370  
35  
1605  
495  
55  
pF  
pF  
pF  
Ω
VDS = 15 V, VGS = 0 V,  
f = 1 MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Gate Resistance  
0.3  
1.6  
3.2  
Switching Characteristics  
td(on)  
tr  
td(off)  
tf  
Turn-On Delay Time  
Rise Time  
9
3
18  
10  
36  
10  
24  
12  
ns  
ns  
VDD = 15 V, ID = 13.5 A,  
V
GS = 10 V, RGEN = 6 Ω  
Turn-Off Delay Time  
Fall Time  
20  
3
ns  
ns  
Qg  
Total Gate Charge  
Total Gate Charge  
Gate to Source Charge  
Gate to Drain “Miller” Charge  
VGS = 0 V to 10 V  
VGS = 0 V to 4.5 V  
17  
7.5  
3.9  
2.0  
nC  
nC  
nC  
nC  
Qg  
VDD = 15 V,  
D = 13.5 A  
I
Qgs  
Qgd  
Drain-Source Diode Characteristics  
V
GS = 0 V, IS = 2.1 A  
(Note 2)  
(Note 2)  
0.75  
0.86  
24  
1.1  
1.2  
38  
15  
34  
24  
VSD  
Source to Drain Diode Forward Voltage  
V
VGS = 0 V, IS = 13.5 A  
trr  
Reverse Recovery Time  
Reverse Recovery Charge  
Reverse Recovery Time  
Reverse Recovery Charge  
ns  
nC  
ns  
IF = 13.5 A, di/dt = 100 A/μs  
IF = 13.5 A, di/dt = 300 A/μs  
Qrr  
trr  
8
19  
Qrr  
13  
nC  
Notes:  
2
1. R  
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R  
is guaranteed by design while R is determined by  
θCA  
θJA  
θJC  
the user's board design.  
b) 125 °C/W when mounted  
on a minimum pad of 2 oz copper.  
a) 50 °C/W when mounted on a  
1 in pad of 2 oz copper  
2
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.  
3. E of 29 mJ is based on starting T = 25 °C, L = 0.3 mH, I = 14 A, V = 27 V, V = 10 V.  
AS  
J
AS  
DD  
GS  
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.  
©2011 Fairchild Semiconductor Corporation  
FDMS7698 Rev.C1  
2
www.fairchildsemi.com  
Typical Characteristics TJ = 25 °C unless otherwise noted  
50  
5
4
3
2
1
0
V
= 10 V  
GS  
= 6 V  
VGS = 3.5 V  
V
VGS = 4 V  
GS  
40  
30  
20  
10  
0
V
= 4.5 V  
GS  
V
= 4 V  
GS  
VGS = 4.5 V  
VGS = 6 V  
V
= 3.5 V  
GS  
VGS = 10 V  
PULSE DURATION = 80 μs  
DUTY CYCLE = 0.5% MAX  
PULSE DURATION = 80 μs  
DUTY CYCLE = 0.5% MAX  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
0
10  
20  
30  
40  
50  
ID, DRAIN CURRENT (A)  
VDS, DRAIN TO SOURCE VOLTAGE (V)  
Figure 1. On-Region Characteristics  
Figure2. N o r m a l i z e d O n - R e s i s ta n c e  
vs Drain Current and Gate Voltage  
1.6  
30  
PULSE DURATION = 80 μs  
DUTY CYCLE = 0.5% MAX  
ID = 13.5 A  
ID = 13.5 A  
VGS = 10 V  
1.4  
25  
20  
15  
10  
5
1.2  
1.0  
0.8  
0.6  
TJ = 125 o  
C
TJ = 25 o  
C
-75 -50 -25  
0
25 50 75 100 125 150  
2
4
6
8
10  
TJ, JUNCTION TEMPERATURE (oC)  
VGS, GATE TO SOURCE VOLTAGE (V)  
F i gu re 3 . N orma li zed On - Res is ta nc e  
vs Junction Temperature  
Figure4. On-Resistance vs Gate to  
Source Voltage  
50  
50  
VGS = 0 V  
PULSE DURATION = 80 μs  
DUTY CYCLE = 0.5% MAX  
40  
30  
20  
10  
0
10  
1
VDS = 5 V  
TJ = 150 o  
C
TJ = 25 oC  
TJ = 150 o  
C
TJ = 25 o  
C
TJ = -55 o  
C
TJ = -55 o  
C
0.1  
1
2
3
4
5
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
VGS, GATE TO SOURCE VOLTAGE (V)  
VSD, BODY DIODE FORWARD VOLTAGE (V)  
Figure 5. Transfer Characteristics  
Figure6. Source to Drain Diode  
Forward Voltage vs Source Current  
©2011 Fairchild Semiconductor Corporation  
FDMS7698 Rev.C1  
3
www.fairchildsemi.com  
Typical Characteristics TJ = 25 °C unless otherwise noted  
2000  
1000  
10  
ID = 13.5 A  
VDD = 10 V  
Ciss  
8
6
4
2
0
VDD =15 V  
Coss  
VDD = 20 V  
100  
Crss  
f = 1 MHz  
GS = 0 V  
V
10  
0.1  
1
10  
30  
0
3
6
9
12  
15  
18  
VDS, DRAIN TO SOURCE VOLTAGE (V)  
Qg, GATE CHARGE (nC)  
Figure 7. Gate Charge Characteristics  
Figure8. C a p a c i t a n c e v s D r a i n  
to Source Voltage  
25  
50  
40  
30  
20  
10  
0
RθJC = 4.4 oC/W  
20  
15  
10  
VGS = 10 V  
TJ = 25 oC  
VGS = 4.5 V  
TJ = 125 o  
C
TJ = 100 oC  
Limited by Package  
5
1
0.01  
0.1  
1
10  
40  
25  
50  
75  
100  
125  
150  
TC, CASE TEMPERATURE (oC)  
tAV, TIME IN AVALANCHE (ms)  
Figure9. U n c l a m p e d I n d u c t i v e  
Switching Capability  
Figure10. Maximum Continuous Drain  
Current vs Case Temperature  
100  
10  
1000  
SINGLE PULSE  
θJA = 125 oC/W  
A = 25 oC  
R
100 us  
1 ms  
T
100  
10  
THIS AREA IS  
10 ms  
100 ms  
1
LIMITED BY r  
DS(on)  
1 s  
SINGLE PULSE  
TJ = MAX RATED  
0.1  
10 s  
DC  
R
θJA = 125 oC/W  
A = 25 oC  
1
T
0.01  
0.01  
0.5  
10-4  
10-3  
10-2  
t, PULSE WIDTH (sec)  
10-1  
1
10  
100 1000  
0.1  
1
10  
100200  
VDS, DRAIN to SOURCE VOLTAGE (V)  
Figure 11. Forward Bias Safe  
Operating Area  
Figure 12. Single Pulse Maximum  
Power Dissipation  
©2011 Fairchild Semiconductor Corporation  
FDMS7698 Rev.C1  
4
www.fairchildsemi.com  
Typical Characteristics TJ = 25 °C unless otherwise noted  
2
DUTY CYCLE-DESCENDING ORDER  
1
D = 0.5  
0.2  
0.1  
0.05  
0.1  
P
DM  
0.02  
0.01  
t
1
t
2
0.01  
NOTES:  
DUTY FACTOR: D = t /t  
SINGLE PULSE  
1
2
R
θJA = 125 oC/W  
PEAK T = P  
J
x Z  
x R  
+ T  
DM  
θJA  
θJA A  
0.001  
10-4  
10-3  
10-2  
10-1  
t, RECTANGULAR PULSE DURATION (sec)  
1
10  
100  
1000  
Figure 13. Junction-to-Ambient Transient Thermal Response Curve  
©2011 Fairchild Semiconductor Corporation  
FDMS7698 Rev.C1  
5
www.fairchildsemi.com  
Dimensional Outline and Pad Layout  
©2011 Fairchild Semiconductor Corporation  
FDMS7698 Rev.C1  
6
www.fairchildsemi.com  
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intended to be an exhaustive list of all such trademarks.  
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®
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®
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®
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Definition of Terms  
Datasheet Identification  
Product Status  
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Datasheet contains the design specifications for product development. Specifications  
may change in any manner without notice.  
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Datasheet contains preliminary data; supplementary data will be published at a later  
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Full Production  
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Semiconductor. The datasheet is for reference information only.  
Not In Production  
Rev. I54  
www.fairchildsemi.com  
©2011 Fairchild Semiconductor Corporation  
FDMS7698 Rev.C1  
7
配单直通车
FDMS7698产品参数
型号:FDMS7698
Brand Name:Fairchild Semiconductor
是否无铅: 不含铅
是否Rohs认证: 符合
生命周期:Transferred
IHS 制造商:FAIRCHILD SEMICONDUCTOR CORP
零件包装代码:QFN
包装说明:ROHS COMPLIANT, POWER 56, 8 PIN
针数:8
制造商包装代码:8LD,PQFN,JEDEC MO-240 AA,5.0X6.0MM
Reach Compliance Code:not_compliant
ECCN代码:EAR99
HTS代码:8541.29.00.95
风险等级:5.67
Is Samacsys:N
雪崩能效等级(Eas):29 mJ
外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):16 A
最大漏极电流 (ID):13.5 A
最大漏源导通电阻:0.01 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:MO-240AA
JESD-30 代码:R-PDSO-F5
JESD-609代码:e3
湿度敏感等级:1
元件数量:1
端子数量:5
工作模式:ENHANCEMENT MODE
最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):29 W
最大脉冲漏极电流 (IDM):50 A
认证状态:Not Qualified
子类别:FET General Purpose Power
表面贴装:YES
端子面层:Matte Tin (Sn)
端子形式:FLAT
端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING
晶体管元件材料:SILICON
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