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产品型号FDMS86252的概述

芯片FDMS86252的概述 FDMS86252是一款由Fidelity Microelectronics（费德利提微电子公司）生产的高性能场效应晶体管（MOSFET），主要用于电源管理和信号放大等应用。该芯片以其显著的电气性能和可靠性受到众多电子设计工程师的青睐。FDMS86252产品设计注重低导通电阻（RDS(on)）、快速开关速度以及较高的电流承载能力，使其非常适合用于各种电子设备如DC/DC转换器、直流电机驱动器和高效电源系统。芯片FDMS86252的详细参数 FDMS86252的主要参数包括： 1. 导通电阻（RDS(on)）: 在VGS=10V时，该芯片的导通电阻小于15mΩ，这使得功耗非常低，特别适用于高效率设备。 2. 最大漏极电流（ID）: 在较高的环境温度下，FDMS86252已知可以承载最大漏极电流可高达90A。这确保了设备在极高负载下的稳定性。 3. 工作温度...

产品型号FDMS86252的Datasheet PDF文件预览

August 2010

FDMS86252

N-Channel PowerTrench^®MOSFET

150 V, 16 A, 51 mΩ

Features

General Description

This N-Channel MOSFET is produced using Fairchild

Semiconductor’s advanced Power Trench process that has

been especially tailored to minimize the on-state resistance and

yet maintain superior switching performance.

Max r_DS(on)= 51 mΩ at V_GS= 10 V, I_D= 4.6 A

Max r_DS(on)= 70 mΩ at V_GS= 6 V, I_D= 3.9 A

Advanced package and silicon combination for low r_DS(on)and

high efficiency

Application

MSL1 robust package design

100% UIL tested

DC-DC Conversion

RoHS Compliant

Bottom

Top

Pin 1

Power 56

MOSFET Maximum Ratings T_A= 25 °C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

150

±20

Drain Current -Continuous (Package limited)

-Continuous (Silicon limited)

-Continuous

T_C= 25 °C

_C= 25 °C

I_D

T_A= 25 °C

(Note 1a)

(Note 3)

(Note 1a)

4.6

-Pulsed

E_AS

Single Pulse Avalanche Energy

Power Dissipation

T_C= 25 °C

T_A= 25 °C

P_D

Power Dissipation

2.5

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

1.8

°C/W

(Note 1a)

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

13 ’’

Tape Width

12 mm

Quantity

FDMS86252

Power 56

3000 units

FDMS86252 Rev.C

www.fairchildsemi.com

Electrical Characteristics T_J= 25 °C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

BV_DSS

Drain to Source Breakdown Voltage

I_D= 250 μA, V_GS= 0 V

150

ΔBV_DSS

ΔT_J

Breakdown Voltage Temperature

Coefficient

_D= 250 μA, referenced to 25 °C

106

mV/°C

I_DSS

I_GSS

Zero Gate Voltage Drain Current

Gate to Source Leakage Current

V_DS= 120 V, V_GS= 0 V

V_GS= ±20 V, V_DS= 0 V

μA

±100

On Characteristics

V_GS(th)

Gate to Source Threshold Voltage

V_GS= V_DS, I_D= 250 μA

2.0

2.8

-9

4.0

ΔV_GS(th)

ΔT_J

Gate to Source Threshold Voltage

Temperature Coefficient

_D= 250 μA, referenced to 25 °C

V_GS= 10 V, I_D= 4.6 A

_GS= 6 V, I_D= 3.9 A

mV/°C

43.9

50.5

r_DS(on)

Static Drain to Source On Resistance

Forward Transconductance

mΩ

V_GS= 10 V, I_D= 4.6 A,

T_J= 125 °C

g_FS

V_DS= 10 V, I_D= 4.6 A

Dynamic Characteristics

C_iss

C_oss

C_rss

R_g

Input Capacitance

678

905

115

V_DS= 75 V, V_GS= 0 V,

f = 1 MHz

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

4.3

0.4

Switching Characteristics

t_d(on)

t_r

t_d(off)

t_f

Turn-On Delay Time

Rise Time

7.7

2.3

8.6

V_DD= 75 V, I_D= 4.6 A,

_GS= 10 V, R_GEN= 6 Ω

Turn-Off Delay Time

Fall Time

3.2

Q_g

Total Gate Charge

Gate to Source Charge

Gate to Drain “Miller” Charge

V_GS= 0 V to 10 V

V_GS= 0 V to 5 V

Q_g

6.1

2.8

2.4

V_DD= 75 V,

_D= 4.6 A

Q_gs

Q_gd

Drain-Source Diode Characteristics

_GS= 0 V, I_S= 2 A

(Note 2)

0.75

0.80

1.2

1.3

V_SD

Source-Drain Diode Forward Voltage

V_GS= 0 V, I_S= 4.6 A

t_rr

Reverse Recovery Time

I_F= 4.6 A, di/dt = 100 A/μs

Q_rr

Reverse Recovery Charge

Notes:

1. R

is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

is guaranteed by design while R is determined by

θCA

θJA

θJC

the user's board design.

a. 50 °C/W when mounted on a

b. 125 °C/W when mounted on a

minimum pad of 2 oz copper.

1 in pad of 2 oz copper.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. Starting T = 25 °C, L = 1 mH, I = 10 A, V = 135 V, V = 10 V.

FDMS86252 Rev.C

www.fairchildsemi.com

Typical Characteristics T_J= 25 °C unless otherwise noted

V_GS= 10 V

V_GS= 6 V

V_GS= 5.5 V

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

V_GS= 4.5 V

V_GS= 5 V

V_GS= 5.5 V

V_GS= 4.5 V

V_GS= 10 V

V_GS= 6 V

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

I_D, DRAIN CURRENT (A)

V_DS, DRAIN TO SOURCE VOLTAGE (V)

Figure 1. On Region Characteristics

Figure2. N o r m a l i z e d O n - R e s i s ta n c e

vs Drain Current and Gate Voltage

2.4

200

I_D= 4.6 A

_GS= 10 V

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

I_D= 4.6 A

150

100

T_J= 125 ^o

T_J= 25 ^o

-75 -50 -25

25 50 75 100 125 150

T_J, JUNCTION TEMPERATURE (^oC)

V_GS, GATE TO SOURCE VOLTAGE (V)

Figure4. On-Resistance vs Gate to

Source Voltage

Figure 3. Normalized On Resistance

vs Junction Temperature

V_GS= 0 V

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

T_J= 150 ^o

V_DS= 5 V

T_J= 150 ^o

T_J= 25 ^oC

0.1

T_J= 25 ^o

T_J= -55 ^o

0.01

0.001

T_J= -55 ^o

0.0

0.2

0.4

0.6

0.8

1.0

1.2

V_GS, GATE TO SOURCE VOLTAGE (V)

V_SD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics

Figure6. Source to Drain Diode

Forward Voltage vs Source Current

FDMS86252 Rev.C

www.fairchildsemi.com

Typical Characteristics T_J= 25 °C unless otherwise noted

1000

100

I_D= 4.6 A

C_iss

V_DD= 75 V

C_oss

V_DD= 50 V

V_DD= 100 V

C_rss

f = 1 MHz

= 0 V

0.1

100

V_DS, DRAIN TO SOURCE VOLTAGE (V)

Q , GATE CHARGE (nC)

Figure 7. Gate Charge Characteristics

Figure8. C a p a c i t a n c e v s D r a i n

to Source Voltage

T_J= 25 ^oC

T_J= 100 ^oC

V_GS= 10 V

T_J= 125 ^o

Limited by Package

V_GS= 6 V

R_θJC= 1.8 ^oC/W

100

0.001

0.01

0.1

125

150

T_C, CASE TEMPERATURE (^oC)

t_AV, TIME IN AVALANCHE (ms)

Figure9. U n c l a m p e d I n d u c t i v e

Switching Capability

Figure10. Maximum Continuous Drain

Current vs Case Temperature

2000

V_GS= 10 V

1000

100

100 μs

1 ms

0.1

10 ms

THIS AREA IS

100 ms

LIMITED BY r

DS(on)

1 s

SINGLE PULSE

T_J= MAX RATED

R_θJA= 125 ^oC/W

10 s

SINGLE PULSE

R_θJA= 125 ^oC/W

0.01

0.001

_A= 25 ^oC

0.5

10^-4

10^-3

10^-2

t, PULSE WIDTH (sec)

10^-1

0.01

0.1

100

800

100 1000

V_DS, DRAIN to SOURCE VOLTAGE (V)

Figure 11. Forward Bias Safe

Operating Area

Figure12. Single Pulse Maximum

Power Dissipation

FDMS86252 Rev.C

www.fairchildsemi.com

Typical Characteristics T_J= 25 °C unless otherwise noted

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

NOTES:

DUTY FACTOR: D = t /t

0.001

0.0001

_θJA= 125 ^oC/W

PEAK T = P

x Z

x R

+ T

θJA

θJA A

10^-4

10^-3

10^-2

10^-1

t, RECTANGULAR PULSE DURATION (sec)

100

1000

Figure 13. Junction-to-Ambient Transient Thermal Response Curve

FDMS86252 Rev.C

www.fairchildsemi.com

Dimensional Outline and Pad Layout

FDMS86252 Rev.C

www.fairchildsemi.com

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not

intended to be an exhaustive list of all such trademarks.

AccuPower™

Auto-SPM™

Build it Now™

CorePLUS™

CorePOWER™

CROSSVOLT™

CTL™

F-PFS™

FRFET

Global Power Resource

Green FPS™

Green FPS™ e-Series™

Gmax™

Power-SPM™

PowerTrench

PowerXS™

®*

The Power Franchise

Programmable Active Droop™

QFET

QS™

Quiet Series™

TinyBoost™

TinyBuck™

TinyCalc™

GTO™

Current Transfer Logic™

IntelliMAX™

ISOPLANAR™

MegaBuck™

MICROCOUPLER™

MicroFET™

RapidConfigure™

™

DEUXPEED

TinyLogic

Dual Cool™

TINYOPTO™

TinyPower™

TinyPWM™

EcoSPARK

Saving our world, 1mW/W/kW at a time™

SignalWise™

SmartMax™

EfficentMax™

ESBC™

MicroPak™

TinyWire™

MicroPak2™

MillerDrive™

MotionMax™

Motion-SPM™

OptiHiT™

SMART START™

TriFault Detect™

TRUECURRENT™*

μSerDes™

SPM

STEALTH™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SupreMOS™

SyncFET™

Fairchild

Fairchild Semiconductor

FACT Quiet Series™

OPTOLOGIC

FACT

FAST

UHC

OPTOPLANAR

Ultra FRFET™

UniFET™

VCX™

VisualMax™

XS™

FastvCore™

FETBench™

Sync-Lock™

FlashWriter

FPS™

PDP SPM™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY

PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY

THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE

EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used here in:

1. Life support devices or systems are devices or systems which, (a) are

intended for surgical implant into the body or (b) support or sustain life,

and (c) whose failure to perform when properly used in accordance with

instructions for use provided in the labeling, can be reasonably

expected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, or

system whose failure to perform can be reasonably expected to cause

the failure of the life support device or system, or to affect its safety or

effectiveness.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,

www.Fairchildsemi.com, under Sales Support.

Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their

parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed

application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the

proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild

Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild

Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of

up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and

warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is

committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Datasheet contains the design specifications for product development. Specifications

may change in any manner without notice.

Advance Information

Formative / In Design

Datasheet contains preliminary data; supplementary data will be published at a later

date. Fairchild Semiconductor reserves the right to make changes at any time without

notice to improve design.

Preliminary

First Production

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

make changes at any time without notice to improve the design.

No Identification Needed

Obsolete

Full Production

Datasheet contains specifications on a product that is discontinued by Fairchild

Semiconductor. The datasheet is for reference information only.

Not In Production

Rev. I48

www.fairchildsemi.com

FDMS86252 Rev.C

FDMS86252相关文章

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FDMS86252产品参数

型号:	FDMS86252
Brand Name：	Fairchild Semiconductor
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Transferred
IHS 制造商：	FAIRCHILD SEMICONDUCTOR CORP
零件包装代码：	QFN
包装说明：	ROHS COMPLIANT, POWER 56, 8 PIN
针数：	8
制造商包装代码：	8LD,PQFN,JEDEC MO-240 AA,5.0X6.0MM
Reach Compliance Code：	not_compliant
ECCN代码：	EAR99
HTS代码：	8541.29.00.95
风险等级：	7.93
Is Samacsys：	N
雪崩能效等级（Eas）：	50 mJ
外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	150 V
最大漏极电流 (Abs) (ID)：	16 A
最大漏极电流 (ID)：	4.6 A
最大漏源导通电阻：	0.051 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	MO-240AA
JESD-30 代码：	R-PDSO-F5
JESD-609代码：	e3
湿度敏感等级：	1
元件数量：	1
端子数量：	5
工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	69 W
最大脉冲漏极电流 (IDM)：	20 A
认证状态：	Not Qualified
子类别：	FET General Purpose Power
表面贴装：	YES
端子面层：	Matte Tin (Sn)
端子形式：	FLAT
端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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