FDN342P现货热卖使用介绍供应商报价哪里找芯片批发报价-中国IC网-芯三七

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产品型号FDN342P的概述

芯片FDN342P的概述 FDN342P是一款广泛应用于模拟电路中的N沟道增强型MOSFET（场效应管）。其设计初衷是为满足高效能、低功耗设备的需求，因而在智能手机、计算机硬件及其他电子设备的电源管理和信号开关等应用中显得尤为重要。FDN342P主要以其优秀的导通电阻和开关速度而受到业内的关注。 FDN342P为了实现更佳的性能，采用了先进的制造工艺，具备高转导（gm）以及极低的输入栅极电流。该芯片的电气特性使其在一般工作条件下，能够在较低的驱动电压下提供稳定的输出性能，适应各种应用场景。芯片FDN342P的详细参数 FDN342P的主要电气参数如下： 1. 最大漏极-源极电压 (V_DS): 30V 2. 最大栅极-源极电压 (V_GS): ±20V 3. 漏极电流 (I_D): 2.0A 4. 功率耗散 (P_D): 1.2W（在放置于适当散热器的情况下） 5. 导通电阻 (R_...

产品型号FDN342P的Datasheet PDF文件预览

August 1999

FDN342P

P-Channel 2.5V Specified PowerTrench^TMMOSFET

General Description

Features

This P-Channel 2.5V specified MOSFET is produced in

a rugged gate version of Fairchild Semiconductor's

advanced PowerTrench process. It has been optimized

for power management applications for a wide range

of gate drive voltages (2.5V - 12V).

-2 A, -20 V. R_DS(ON)= 0.08 Ω @ V_GS= -4.5 V

R_DS(ON)= 0.13 Ω @ V_GS= -2.5 V.

Rugged gate rating (±12V).

High performance trench technology for extremely

low R_DS(ON)

Applications

Load switch

Enhanced power SuperSOT^TM-3 (SOT-23).

Battery protection

Power management

SuperSOT^TM-3

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

Parameter

Ratings

Units

V_DSS

V_GSS

I_D

Drain-Source Voltage

Gate-Source Voltage

-20

±12

-2

Drain Current - Continuous

- Pulsed

(Note 1a)

-10

P_D

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

0.5

0.46

T_J, T_stg

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

250

R_θ_JA

°C/W

R_θ_JC

Package Outlines and Ordering Information

Device Marking

Device

Reel Size

Tape Width

Quantity

FDN342P

7’’

8mm

3000 units

1999 Fairchild Semiconductor Corporation

FDN342P Rev. B

Electrical Characteristics

T_A= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min Typ Max Units

Off Characteristics

BV_DSS

Drain-Source Breakdown Voltage

-20

_GS= 0 V, I_D= -250 µA

Breakdown Voltage Temperature

Coefficient

-16

∆BVDSS

∆T_J

I_D= -250 µA,Referenced to 25°C

mV/°C

I_DSS

Zero Gate Voltage Drain Current

V_DS= -16 V, V_GS= 0 V

V_GS= 12 V, V_DS= 0 V

-1

µA

I_GSSF

Gate-Body Leakage Current,

Forward

100

I_GSSR

Gate-Body Leakage Current,

Reverse

V_GS= -12 V, V_DS= 0 V

-100

-1.5

On Characteristics (Note 2)

V_GS(th)

Gate Threshold Voltage

-0.6

-1.05

V_DS= V_GS, I_D= -250 µA

Gate Threshold Voltage

Temperature Coefficient

∆VGS(th)

∆T_J

_D= -250 µA,Referenced to 25°C

mV/°C

R_DS(on)

Static Drain-Source

On-Resistance

V_GS= -4.5 V, I_D= -2 A

V_GS= -4.5 V, I_D= -2 A,T_J=125°C

0.062

0.086

0.099

0.08

0.14

0.13

Ω

_GS= -2.5 V, I_D= -1.5 A

I_D(on)

g_FS

On-State Drain Current

V_GS= -4.5 V, V_DS= -5 V

-5

Forward Transconductance

V_DS= -5 V, I_D= -5 A

Dynamic Characteristics

C_iss

C_oss

C_rss

Input Capacitance

V_DS= -10 V, V_GS= 0 V

f = 1.0 MHz

635

175

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics (Note 2)

t_d(on)

t_r

t_d(off)

t_f

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

_DD= -10 V, I_D= -1 A

V_GS= -4.5 V, R_GEN= 6 Ω

6.3

1.5

1.7

Q_g

V_DS= -10 V, I_D= -2 A

V_GS= -4.5 V,

Q_gs

Q_gd

Drain-Source Diode Characteristics and Maximum Ratings

I_S

Maximum Continuous Drain-Source Diode Forward Current

-0.42

-1.2

V_SD

Drain-Source Diode Forward

Voltage

V_GS= 0 V, I_S= -0.42 A

(Note 2)

-0.7

Notes:

1. R_θJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting

surface of the drain pins. R_θJCis guaranteed by design while R_θCAis determined by the user's board design.

a) 250°C/Wwhenmounted

b) 270°C/Wwhenmounted

on a mininum pad.

on a 0.02 in²pad of 2 oz. Cu.

Scale 1 : 1 on letter size paper

2.PulseTest:PulseWidth ≤ 300 µs, Duty Cycle ≤ 2.0%

FDN342P Rev. B

Typical Characteristics

1.8

1.6

1.4

1.2

V_GS= -4.5V

-4.0V

-3.5V

V_GS= -2.5V

-3.0V

-3.5V

-2.5V

-4.0V

-4.5V

-2.0V

0.8

-V_DS, DRAIN-SOURCE VOLTAGE (V)

- I_D, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation

with Drain Current and Gate Voltage.

1.6

1.4

1.2

0.3

0.2

0.1

I_D= -2.0A

_GS= -4.5V

I_D= -1A

T_A= 125^oC

T_A= 25^oC

0.8

0.6

-50

-25

100

125

150

-V_GS, GATE TO SOURCE VOLTAGE (V)

T_J, JUNCTION TEMPERATURE (^oC)

Figure 3. On-Resistance Variation

with Temperature.

Figure 4. On-Resistance Variation

with Gate-to-Source Voltage.

100

V_GS= 0V

25^oC

T_A= -55^oC

V_DS= -5V

125^oC

T_A= 125^oC

25^oC

-55^oC

0.1

0.01

0.001

0.0001

0.2

0.4

0.6

0.8

1.2

1.4

0.4

1.4

2.4

3.4

-V_SD, BODY DIODE FORWARD VOLTAGE (V)

-V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage

Variation with Source Current

and Temperature.

FDN342P Rev. B

Typical Characteristics (continued)

1000

800

600

400

200

V_DS= -5V

f = 1MHz

V_GS= 0 V

I_D= -2A

-10V

-15V

C_ISS

C_OSS

C_RSS

Q_g, GATE CHARGE (nC)

-V_DS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics.

Figure 8. Capacitance Characteristics.

100

SINGLE PULSE

R_θ_JA=270^oC/W

T_A=25^oC

R_DS(ON)LIMIT

1ms

10ms

100ms

V_GS= -4.5V

10s

SINGLE PULSE

0.1

_θJA= 270^oC/W

_A= 25^oC

0.01

0.1

100

0.0001

0.001

0.01

0.1

100

1000

-V_DS, DRAIN-SOURCE VOLTAGE (V)

SINGLE PULSE TIME (SEC)

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum

Power Dissipation.

D = 0.5

0.5

0.2

(t) = r(t) * R

0.1

= 270 °C/W

0.1

0.05

0.02

P(pk)

0.02

0.01

Single Pulse

0.005

- T = P * R

(t)

Duty Cycle, D = t /t

0.002

0.001

0.0001

0.001

0.01

0.1

, TIME (sec)

100

300

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b.

Transient themal response will change depending on the circuit board design.

FDN342P Rev. B

SuperSOT^TM-3 Tape and Reel Data and Package Dimensions

SSOT-3 Packaging

Configuration: Figure 1.0

Packaging Description:

SSOT-3 parts are shipped in tape. The carrier tape is

Customize Label

made from dissipative (carbon filled) polycarbonate

resin. The cover tape is a multilayer film (Heat Activated

Adhesive in nature) primarily composed of polyester film,

adhesive layer, sealant, and anti-static sprayed agent.

These reeled parts in standard option are shipped with

3,000 units per 7" or 177cm diameter reel. The reels are

dark blue in color and is made of polystyrene plastic (anti-

static coated). Other option comes in 10,000 units per 13"

or 330cm diameter reel. This and some other options are

described in the Packaging Information table.

Antistatic Cover Tape

These full reels are individually labeled and placed inside

standard intermediate made of recyclable corrugated

brown paper with a Fairchild logo printing. One pizza box

contains eight reels maximum. And these intermediate

boxes are placed inside

a labeled shipping box which

comes in different sizes depending on the number of parts

shipped.

Human Readable

Label

Embossed

Carrier Tape

SSOT-3 Std Packaging Information

Standard

(no flow code)

Packaging Option

D87Z

Packaging type

TNR

10,000

13"

SSOT-3 Std Unit Orientation

Qty per Reel/Tube/Bag

Reel Size

3,000

7" Dia

Box Dimension (mm)

Max qty per Box

187x107x183 343x343x64

343mm x 342mm x 64mm

Intermediate box for D87Z Option

Human Readable Label

24,000

0.0097

0.1230

30,000

0.0097

0.4150

Weight per unit (gm)

Weight per Reel (kg)

Note/Comments

Human Readable Label sample

Human Readable

Label

187mm x 107mm x 183mm

SSOT-3 Tape Leader and Trailer

Intermediate Box for Standard Option

Configuration: Figure 2.0

Carrier Tape

Cover Tape

Components

Trailer Tape

Leader Tape

300mm minimum or

75 empty pockets

500mm minimum or

125 empty pockets

August 1999, Rev. C

SuperSOT^TM-3 Tape and Reel Data and Package Dimensions, continued

SSOT-3 Embossed Carrier Tape

Configuration: Figure 3.0

User Direction of Feed

Dimensions are in millimeter

E1 E2

Pkg type

SSOT-3

(8mm)

3.15

+/-0.10

2.77

+/-0.10

8.0

+/-0.3

1.55

+/-0.05

1.125

+/-0.125

1.75

+/-0.10

6.25

min

3.50

+/-0.05

4.0

+/-0.1

4.0

+/-0.1

1.30

+/-0.10

0.228

+/-0.013

5.2

+/-0.3

0.06

+/-02

Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481

rotational and lateral movement requirements (see sketches A, B, and C).

0.5mm

maximum

20 deg maximum

Typical

component

cavity

center line

0.5mm

maximum

20 deg maximum component rotation

Typical

component

center line

Sketch A (Side or Front Sectional View)

Component Rotation

Sketch C (Top View)

Component lateral movement

Sketch B (Top View)

Component Rotation

SSOT-3 Reel Configuration: Figure 4.0

W1 Measured at Hub

Dim A

Max

Dim A

max

See detail AA

Dim N

7"Diameter Option

B Min

Dim C

See detail AA

Dim D

min

13" Diameter Option

W2 max Measured at Hub

DETAIL AA

Dim W2

Dimensions are in inches and millimeters

Reel

Option

Tape Size

8mm

Dim A

Dim B

Dim C

Dim D

Dim N

Dim W1

Dim W3 (LSL-USL)

7.00

177.8

0.059

1.5

512 +0.020/-0.008

13 +0.5/-0.2

0.795

20.2

2.165

0.331 +0.059/-0.000

8.4 +1.5/0

0.567

14.4

0.311 – 0.429

7.9 – 10.9

7" Dia

13.00

330

0.059

1.5

512 +0.020/-0.008

13 +0.5/-0.2

0.795

20.2

4.00

100

0.331 +0.059/-0.000

8.4 +1.5/0

0.567

14.4

0.311 – 0.429

7.9 – 10.9

8mm

13" Dia

July 1999, Rev. C

SuperSOT^TM-3 Tape and Reel Data and Package Dimensions, continued

SuperSOT -3 (FS PKG Code 32)

1 : 1

Scale 1:1 on letter size paper

Dimensions shown below are in:

inches [millimeters]

Part Weight per unit (gram): 0.0097

September 1998, Rev. A

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

ACEx™

CoolFET™

ISOPLANAR™

MICROWIRE™

POP™

PowerTrench™

QS™

UHC™

VCX™

CROSSVOLT™

E²CMOS^TM

FACT™

FACT Quiet Series™

Quiet Series™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

TinyLogic™

FAST^®

FASTr™

GTO™

HiSeC™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD

DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT

RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or

In Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

FDN342P相关文章

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FDN342P产品参数

型号:	FDN342P
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Active
IHS 制造商：	ROCHESTER ELECTRONICS LLC
零件包装代码：	SOT
包装说明：	SUPERSOT-3
针数：	3
制造商包装代码：	SUPERSOT
Reach Compliance Code：	unknown
风险等级：	5.36
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	20 V
最大漏极电流 (ID)：	2 A
最大漏源导通电阻：	0.08 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-G3
JESD-609代码：	e3
湿度敏感等级：	1
元件数量：	1
端子数量：	3
工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性/信道类型：	P-CHANNEL
认证状态：	COMMERCIAL
表面贴装：	YES
端子面层：	MATTE TIN
端子形式：	GULL WING
端子位置：	DUAL
处于峰值回流温度下的最长时间：	30
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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产品型号FDN342P的概述

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