FDS6574A各脚功能电路原理芯片引脚定义引脚图及功能IC贸易商-中国IC网-芯三七

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产品型号FDS6574A的概述

FDS6574A 芯片的概述与详细参数 FDS6574A 是一种高效能的MOSFET（场效应管），广泛应用于电源管理系统、开关电源、LED驱动和其他需要高效率和高密度电流的电子设备中。这种芯片的设计目标是尽量降低功耗，提高转导效率，从而满足现代电子产品对节能和高性能的追求。芯片的详细参数 FDS6574A的关键参数包括： 1. 最大漏极源电压（V_DS）：这个值通常为30V，适合于低至中等电压应用。 2. 最大栅源电压（V_GS）：其最大值为±20V，这意味着它在动态条件下仍能保持良好的导电性。 3. 漏极电流（I_D）：在25°C的环境温度下，FDS6574A能够承受高达35A的漏极电流，适用于需要大电流应用的场合。 4. 导通电阻（R_DS(on)）：此参数是影响电源效率的重要指标，FDS6574A的典型R_DS(on)约为0.018Ω，这在大电流通过时，可以显著降低产生的热量。...

产品型号FDS6574A的Datasheet PDF文件预览

June 2001

PRELIMINARY

FDS6574A

20V N-Channel PowerTrench MOSFET

General Description

Features

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized for

low gate charge, low R_DS(ON)and fast switching speed.

16 A, 20 V.

R_DS(ON)= 6 mΩ @ V_GS= 4.5 V

R_DS(ON)= 7 mΩ @ V_GS= 2.5 V

R_DS(ON)= 9 mΩ @ V_GS= 1.8 V

• Low gate charge

Applications

• High performance trench technology for extremely

• DC/DC converter

low R_DS(ON)

• High power and current handling capability

SO-8

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

V_GSS

Gate-Source Voltage

± 8

I_D

Drain Current – Continuous

– Pulsed

(Note 1a)

2.5

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

(Note 1c)

P_D

1.2

1.0

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +175

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

R_θJA

°C/W

R_θJC

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDS6574A

13’’

12mm

2500 units

FDS6574A Rev B (W)

2001 Fairchild Semiconductor Corporation

Electrical Characteristics

T_A= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min Typ Max Units

Off Characteristics

BV_DSS

Drain–Source Breakdown Voltage

_GS= 0 V,

I_D= 250 µA

∆BVDSS

∆T_J

Breakdown Voltage Temperature

Coefficient

I_D= 250 µA, Referenced to 25°C

mV/°C

I_DSS

Zero Gate Voltage Drain Current

Gate–Body Leakage, Forward

Gate–Body Leakage, Reverse

V_DS= 16 V,

V_GS= 8 V,

V_GS= –8 V

V_GS= 0 V

V_DS= 0 V

µA

I_GSSF

I_GSSR

100

–100

On Characteristics

(Note 2)

V_GS(th)

Gate Threshold Voltage

0.4

0.6

1.5

_DS= V_GS

I_D= 250 µA

∆VGS(th)

∆T_J

Gate Threshold Voltage

Temperature Coefficient

I_D= 250 µA, Referenced to 25°C

–2.7

mV/°C

mΩ

R_DS(on)

Static Drain–Source

On–Resistance

V_GS= 4.5 V, I_D= 16 A

V_GS= 1.8 V, I_D= 13 A

V_GS= 4.5 V, I_D= 12.5 A,T_J=125°C

V_GS= 4.5 V, V_DS= 5 V

4.4

_GS= 2.5 V, I_D= 15 A

5.3

I_D(on)

g_FS

On–State Drain Current

Forward Transconductance

V_DS= 5 V,

I_D= 16 A

115

Dynamic Characteristics

C_iss

C_oss

C_rss

Input Capacitance

7657

1432

775

V_DS= 10V,

f = 1.0 MHz

V _GS= 0 V,

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics (Note 2)

V_DD= 10 V,

V_GS= 4.5 V, R_GEN= 6 Ω

I_D= 1 A,

t_d(on)

t_r

t_d(off)

t_f

Turn–On Delay Time

Turn–On Rise Time

Turn–Off Delay Time

Turn–Off Fall Time

Total Gate Charge

Gate–Source Charge

Gate–Drain Charge

19.5

173

277

131

105

_DS= 10 V,

_GS= 4.5 V

I_D= 16 A,

Q_g

Q_gs

Q_gd

Drain–Source Diode Characteristics and Maximum Ratings

I_S

Maximum Continuous Drain–Source Diode Forward Current

2.1

1.2

Drain–Source Diode Forward

V_GS= 0 V, I_S= 2.1 A

Voltage

V_SD

(Note 2)

0.56

Notes:

1. R_θJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

the drain pins. R_θJCis guaranteed by design while R_θCAis determined by the user's board design.

a) 50°C/W when

mounted on a 1in²

pad of 2 oz copper

b) 105°C/W when

mounted on a .04 in²

pad of 2 oz copper

c) 125°C/W when mounted on a

minimum pad.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

FDS6574A Rev B(W)

Typical Characteristics

100

1.8

1.6

1.4

1.2

V_GS= 4.5V

2.5V

3.5V

1.8V

V_GS= 1.5V

1.5V

1.8V

2.5V

3.0V

3.5V

4.5V

0.8

0.5

1.5

100

V_DS, DRAIN TO SOURCE VOLTAGE (V)

I_D, DIRAIN CURRENT (A)

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

0.012

1.6

I_D= 16A

I_D= 8A

V_GS= 4.5V

0.01

0.008

0.006

0.004

0.002

1.4

1.2

T_A= 125^oC

0.8

0.6

T_A= 25^oC

-50

-25

100

125

150

175

T_J, JUNCTION TEMPERATURE (^oC)

_GS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with

Temperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

V_GS= 0V

T_A= -55^oC

25^oC

V_DS= 5V

125^oC

T_A= 125^oC

25^oC

0.1

-55^oC

0.01

0.001

0.0001

0.5

0.8

1.1

1.4

1.7

0.2

0.4

0.6

0.8

_GS, GATE TO SOURCE VOLTAGE (V)

V_SD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDS6574A Rev B(W)

Typical Characteristics

10000

8000

6000

4000

2000

f = 1 MHz

V_GS= 0 V

V_DS= 5V

I_D= 16 A

10V

C_ISS

15V

C_OSS

C_RSS

Q_g, GATE CHARGE (nC)

_DS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics.

Figure 8. Capacitance Characteristics.

1000

100

SINGLE PULSE

R_θJA= 125°C/W

T_A= 25°C

100µs

R_DS(ON)LIMIT

1ms

10ms

100ms

10s

V_GS= 4.5V

SINGLE PULSE

R_θ_JA= 125^oC/W

T_A= 25^oC

0.1

0.01

0.1

100

0.001

0.01

0.1

100

V_DS, DRAIN-SOURCE VOLTAGE (V)

t₁, TIME (sec)

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum

Power Dissipation.

D = 0.5

_θJA(t) = r(t) + R_θJA

_θJA= 125^oC/W

0.2

0.1

0.05

P(pk)

0.02

0.01

t₁

t₂

0.01

T_J- T_A= P * R_θJA(t)

Duty Cycle, D = t₁/ t₂

SINGLE PULSE

0.001

0.0001

0.001

0.01

0.1

100

1000

t₁, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.

Transient thermal response will change depending on the circuit board design.

FDS6574A Rev B(W)

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

SMART START™

STAR*POWER™

Stealth™

VCX™

FAST

ACEx™

Bottomless™

CoolFET™

OPTOLOGIC™

OPTOPLANAR™

PACMAN™

FASTr™

FRFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

GlobalOptoisolator™

GTO™

HiSeC™

ISOPLANAR™

LittleFET™

MicroFET™

MicroPak™

MICROWIRE™

CROSSVOLT™

DenseTrench™

DOME™

POP™

Power247™

PowerTrench^â

QFET™

EcoSPARK™

E²CMOS^TM

TinyLogic™

QS™

EnSigna^TM

TruTranslation™

UHC™

QT Optoelectronics™

Quiet Series™

SILENTSWITCHER^â

FACT™

FACT Quiet Series™

UltraFET^â

STAR*POWER is used under license

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD

DOES NOT ASSUME ANY LIABILITYARISING OUT OF THE APPLICATION OR USE OFANY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT

RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICESORSYSTEMSWITHOUTTHEEXPRESSWRITTENAPPROVALOFFAIRCHILDSEMICONDUCTORCORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or

In Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. H4

FDS6574A相关文章

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FDS6574A产品参数

型号:	FDS6574A
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Active
IHS 制造商：	ROCHESTER ELECTRONICS LLC
零件包装代码：	SOT
包装说明：	SO-8
针数：	8
Reach Compliance Code：	unknown
风险等级：	5.47
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	20 V
最大漏极电流 (ID)：	16 A
最大漏源导通电阻：	0.006 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-G8
JESD-609代码：	e3
湿度敏感等级：	1
元件数量：	1
端子数量：	8
工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性/信道类型：	N-CHANNEL
认证状态：	COMMERCIAL
表面贴装：	YES
端子面层：	MATTE TIN
端子形式：	GULL WING
端子位置：	DUAL
处于峰值回流温度下的最长时间：	30
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON

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