FDS6673BZ应用文章市场行情现货热卖使用介绍供应商报价-中国IC网-芯三七

当前位置：IC37首页_>F字母起始型号索引_>F字母起始型号索引第292页更新时间：2024-10-24 09:00:02

产品型号FDS6673BZ的概述

芯片FDS6673BZ的概述 FDS6673BZ是一款高性能的N通道功率MOSFET，属于Fairchild Semiconductor（现为ON Semiconductor）的产品线。作为一款低电压、高效率的开关元件，该芯片广泛应用于各种电子设备中，特别是在电源管理、DC-DC转换器、马达驱动等领域。其设计旨在实现较低的导通电阻和优化的开关性能，从而提高系统的整体效率。芯片FDS6673BZ的详细参数在特性参数方面，FDS6673BZ具有以下优势： - 最大漏极-源电压（V_DSS）：30V，意味着该芯片可以在不发生击穿的情况下承受最多30伏的电压。 - 最大连续漏极电流（I_D）：60A，能够支持高功率的负载运行。 - 导通电阻（R_DS(on)）：在相应的栅极驱动电压下，导通电阻小于10mΩ，确保较低的功率损耗。 - 栅极驱动电压范围（V_GS）：±20V，可适应各种控制信号...

产品型号FDS6673BZ的Datasheet PDF文件预览

January 2006

FDS6673BZ

P-Channel PowerTrench^®MOSFET

-30V, -14.5A, 7.8mΩ

General Description

Features

This P-Channel MOSFET is produced using Fairchild

Semiconductor’s advanced Power Trench process that

has been especially tailored to minimize the on-state

resistance.

Max r_DS(on)= 7.8mΩ, V_GS= -10V, I_D= -14.5A

Max r_DS(on)= 12mΩ, V_GS= -4.5V, I_D= -12A

Extended V_GSrange (-25V) for battery applications

HBM ESD protection level of 6.5kV typical (note 3)

This device is well suited for Power Management and

load switching applications common in Notebook

Computers and Portable Battery Packs.

High performance trench technology for extremely low

r_DS(on)

High power and current handling capability

RoHS compliant

SO-8

MOSFET Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

Drain Current -Continuous

-Pulsed

-30

±25

(Note1a)

-14.5

-75

I_D

Power Dissipation for Single Operation

(Note1a)

(Note1b)

(Note1c)

2.5

P_D

1.2

1.0

T_J, T_STG

Operating and Storage Temperature

-55 to 150

°C

Thermal Characteristics

R_θJA

R_θJC

Thermal Resistance , Junction to Ambient (Note 1a)

°C/W

Thermal Resistance , Junction to Case (Note 1)

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape Width

12mm

Quantity

FDS6673BZ

13’’

2500 units

FDS6673BZ Rev. B

www.fairchildsemi.com

Electrical Characteristics T_J= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

B_VDSS

Drain to Source Breakdown Voltage

I_D= -250µA, V_GS= 0V

-30

∆B_VDSS

∆T_J

Breakdown Voltage Temperature

Coefficient

I_D= -250µA, referenced to

25°C

-20

mV/°C

I_DSS

I_GSS

Zero Gate Voltage Drain Current

Gate to Source Leakage Current

V_DS= -24V, V_GS= 0V

V_GS= ±25V, V_DS= 0V

-1

µA

±10

On Characteristics (Note 2)

V_GS(th)

Gate to Source Threshold Voltage

V_GS= V_DS, I_D= -250µA

-1

-1.9

8.1

-3

∆V_GS(th)

∆T_J

Gate to Source Threshold Voltage

Temperature Coefficient

I_D= -250µA, referenced to

25°C

mV/°C

V_GS= -10V , I_D= -14.5A

V_GS= -4.5V, I_D= -12A

6.5

9.6

7.8

r_DS(on)

Drain to Source On Resistance

mΩ

V_GS= -10V, I_D= -14.5A

T_J= 125^oC

9.7

g_FS

Forward Transconductance

V_DS= -5V, I_D= -14.5A

Dynamic Characteristics

C_iss

C_oss

C_rss

Input Capacitance

3500

600

4700

800

V_DS= -15V, V_GS= 0V,

f = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

600

900

Switching Characteristics (Note 2)

t_d(on)

t_r

t_d(off)

t_f

Turn-On Delay Time

Rise Time

V_DD= -15V, I_D= -1A

V_GS= -10V, R_GS= 6Ω

Turn-Off Delay Time

Fall Time

225

105

167

V_DS= -15V, V_GS= -10V,

I_D= -14.5A

Q_g

Total Gate Charge

124

Q_g

Total Gate Charge

V_DS= -15V, V_GS= -5V,

I_D= -14.5A

Q_gs

Q_gd

Gate to Source Gate Charge

Gate to Drain Charge

23.5

Drain-Source Diode Characteristics

V_SD

t_rr

Source to Drain Diode Forward Voltage V_GS= 0V, I_S= -2.1A

-0.7

-1.2

Reverse Recovery Time

Reverse Recovery Charge

I_F= 14.5A, di/dt = 100A/µs

Q_rr

Notes:

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the

θJA

drain pins. R

is guaranteed by design while R

is determined by the user’s board design.

θJC

θCA

a) 50 C/W (10 sec)

when mounted on a 1 in

pad of 2 oz copper

b) 105 C/W when mounted

c) 125 C/W when mounted

on a .04 in pad of 2 oz

copper

on a minimun pad

Scale 1 : 1 on letter size paper

2: Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.

www.fairchildsemi.com

FDS6673BZ Rev. B

Typical Characteristics T_J= 25°C unless otherwise noted

4.0

3.8

3.6

3.4

3.2

3.0

2.8

2.6

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

PULSE DURATION = 80µs

DUTY CYCLE = 0.5%MAX

PULSE DURATION = 80µs

DUTY CYCLE = 0.5%MAX

V_GS= -3.5V

V_GS= -4V

V_GS= -10V

V_GS= -5V

V_GS= -4V

V_GS= -4.5V

V_GS= -3.5V

V_GS= -5V

V_GS= -3V

V_GS= -10V

-V_DS, DRAIN TO SOURCE VOLTAGE (V)

-I_D, DRAIN CURRENT(A)

Figure 1. On Region Characteristics

Figure 2. Normalized On-Resistance vs Drain

Current and Gate Voltage

1.5

I_D= -14.5A

_GS= -10V

PULSE DURATION = 80µs

DUTY CYCLE = 0.5%MAX

I_D= -7A

1.4

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6

T_J= 150^oC

T_J= 25^oC

-80

-40

120

160

T_J, JUNCTION TEMPERATURE (^oC)

-V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 3. Normalized On Resistance vs Junction

Temperature

Figure 4. On-Resistance vs Gate to Source

Voltage

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

V_GS= 0V

V_DS= -6V

T_J= 150^oC

T_J= 25^oC

T_J= -55^oC

0.1

0.01

1E-3

T_J= -55^oC

3.5

2.0

2.5

3.0

4.0

4.5

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

-V_SD, BODY DIODE FORWARD VOLTAGE (V)

-V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

Figure 6. Source to Drain Diode Forward

Voltage vs Source Current

www.fairchildsemi.com

FDS6673BZ Rev. B

Typical Characteristics T_J= 25°C unless otherwise noted

6000

C_iss

C_oss

V_DD= -10V

V_DD= -15V

V_DD= -20V

1000

C_rss

f = 1MHz

V_GS= 0V

100

0.1

-V_DS, DRAIN TO SOURCE VOLTAGE (V)

Q_g, GATE CHARGE(nC)

Figure 7. Gate Charge Characteristics

Figure 8. Capacitance vs Drain to Source Voltage

1000

100

T_J= 150^oC

T_J= 25^oC

0.1

T_J= 25^oC

T_J= 125^oC

0.01

1E-3

1E-4

10^-2

10^-1

t_AV, TIME IN AVALANCHE(ms)

10⁰

10¹

10²

10³

-V_GS(V)

Figure 9. I_gvs V_GS

Figure 10. Unclamped Inductive Switching

Capability

100

10us

100us

1ms

V_GS= -10V

1ms

100ms

V_GS= -4.5V

0.1

OPERATION IN THIS

AREA MAY BE

LIMITED BY r_DS(on)

SINGLE PULSE

T =MAX RATED

T_A=25^oC

0.01

0.1

100

125

^oC

150

-V_DS, DRAIN TO SOURCE VOLTAGE (V)

T_A, AMBIENT TEMPERATURE

(

)

Figure 11. Maximum Continuous Drain Current vs

Ambient Temperature

Figure 12. Forward Bias Safe Operating Area

www.fairchildsemi.com

FDS6673BZ Rev. B

Typical Characteristics T_J= 25°C unless otherwise noted

1000

= 25 C

V_GS= -10V

FOR TEMPERATURES

ABOVE 25 C DERATE PEAK

CURRENT AS FOLLOWS:

100

150 – T

I = I

-----------------------

125

SINGLE PULSE

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

10¹

10²

10³

t, PULSE WIDTH (s)

Figure 13. Single Pulse Maximum Power Dissipation

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.2

0.1

0.05

0.02

0.01

0.1

0.01

1E-3

NOTES:

DUTY FACTOR: D = t /t

SINGLE PULSE

PEAK T = P

x Z

x R

+ T

θJA

θJA A

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

10¹

10²

10³

t, RECTANGULAR PULSE DURATION(s)

Figure 14. Transient Thermal Response Curve

www.fairchildsemi.com

FDS6673BZ Rev. B

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

ACEx™

PowerSaver™

SuperSOT™-6

SuperSOT™-8

SyncFET™

TCM™

ISOPLANAR™

LittleFET™

MICROCOUPLER™

MicroFET™

MicroPak™

MICROWIRE™

MSX™

FAST

PowerTrench

ActiveArray™

Bottomless™

Build it Now™

CoolFET™

CROSSVOLT™

DOME™

EcoSPARK™

E²CMOS™

EnSigna™

FACT™

FASTr™

FPS™

FRFET™

GlobalOptoisolator™

GTO™

QFET

QS™

QT Optoelectronics™

Quiet Series™

RapidConfigure™

RapidConnect™

μSerDes™

ScalarPump™

SILENT SWITCHER

SMART START™

SPM™

Stealth™

TinyLogic

TINYOPTO™

TruTranslation™

UHC™

HiSeC™

I²C™

MSXPro™

OCX™

UltraFET

i-Lo™

ImpliedDisconnect™

IntelliMAX™

UniFET™

VCX™

Wire™

OCXPro™

OPTOLOGIC

OPTOPLANAR™

PACMAN™

POP™

Power247™

PowerEdge™

FACT Quiet Series™

Across the board. Around the world.™

The Power Franchise

SuperFET™

SuperSOT™-3

Programmable Active Droop™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVESTHE RIGHTTO MAKE CHANGES WITHOUTFURTHER NOTICETOANY

PRODUCTS HEREINTO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOTASSUMEANYLIABILITY

ARISING OUTOFTHEAPPLICATION OR USE OFANYPRODUCTOR CIRCUITDESCRIBED HEREIN; NEITHER DOES IT

CONVEYANYLICENSE UNDER ITS PATENTRIGHTS, NORTHE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or

In Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. I18

FDS6673BZ相关文章

配单直通车

柒号芯城电子商务（深圳）有限公司服务专线: 0755-83209937 在线联系:

QQ：2881677436 复制

QQ：2881620402 复制

首天国际（深圳）科技有限公司服务专线: 0755-82807802/82807803 在线联系:

QQ：528164397 复制

QQ：1318502189 复制

深圳市中利达电子科技有限公司服务专线: 0755-83200645/13686833545 在线联系:

QQ：1902134819 复制

QQ：2881689472 复制

深圳市芯福林电子有限公司服务专线: 13418564337 在线联系:

QQ：2881495808 复制

QQ：308365177 复制

北京元坤伟业科技有限公司服务专线: 010-62104931621064316210489162104791 在线联系:

QQ：857273081 复制

QQ：1594462451 复制

FDS6673BZ产品参数

型号:	FDS6673BZ
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Active
零件包装代码：	SOT
包装说明：	ROHS COMPLIANT, SOP-8
针数：	8
Reach Compliance Code：	unknown
风险等级：	5.18
Is Samacsys：	N
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	30 V
最大漏极电流 (ID)：	14.5 A
最大漏源导通电阻：	0.0078 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：	900 pF
JESD-30 代码：	R-PDSO-G8
JESD-609代码：	e3
湿度敏感等级：	1
元件数量：	1
端子数量：	8
工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性/信道类型：	P-CHANNEL
认证状态：	COMMERCIAL
表面贴装：	YES
端子面层：	MATTE TIN
端子形式：	GULL WING
端子位置：	DUAL
处于峰值回流温度下的最长时间：	30
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

电子百科

产品导航

产品型号FDS6673BZ的概述

产品型号FDS6673BZ的Datasheet PDF文件预览

FDS6673BZ相关产品

FDS6673BZ相关文章

IC37:专业IC行业平台