FDS6680现货热卖使用介绍供应商报价哪里找芯片批发报价-中国IC网-芯三七

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产品型号FDS6680的概述

一、芯片FDS6680的概述 FDS6680是一款高效的功率MOSFET（金属氧化物半导体场效应晶体管），广泛应用于电源管理、DC-DC转换器、开关电源等电子设备中。该芯片以其低导通电阻、高频响应和快速开关特性，成为了现代电子设备中不可或缺的一部分。它的设计理念旨在提高系统的能效，降低功耗，满足现代电子产品对小型化、轻量化和高效能的需求。 FDS6680采用了先进的生产工艺，使其在处理高电流应用的同时，能够保持较低的发热量。这种特性使得FDS6680在高频率和高效率电源转换应用中具有明显优势。广泛用于电动汽车、智能手机及其他便携式设备，均展示了其在市场中的竞争力。二、芯片FDS6680的详细参数 FDS6680的主要技术参数包括但不限于以下几个方面： - 最大漏极电压（V_DSS）：30V - 最大漏极电流（I_D）：25A - 导通电阻（R_DS(on)）：在10V门极电压下，典型...

产品型号FDS6680的Datasheet PDF文件预览

April 1998

FDS6680

Single N-Channel Logic Level PWM Optimized PowerTrench^TMMOSFET

General Description

Features

This N-Channel Logic Level MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers.

11.5 A, 30 V. R_DS(ON)= 0.010 W @ V_GS= 10 V

R_DS(ON)= 0.015 W @ V_GS= 4.5 V.

Optimized for use in switching DC/DC converters with

PWM controllers.

The MOSFET features faster switching and lower gate

charge than other MOSFETs with comparable R_DS(ON)

specifications.

Very fast switching.

The result is a MOSFET that is easy and safer to drive (even

at very high frequencies), and DC/DC power supply designs

with higher overall efficiency.

Low gate charge (typical Qg = 19 nC).

SuperSOT^TM-6

SO-8

SOT-223

SuperSOT^TM-8

SOIC-16

SOT-23

Absolute Maximum Ratings T_A= 25^oC unless other wise noted

Symbol

V_DSS

V_GSS

I_D

Parameter

FDS6680

Units

Drain-Source Voltage

Gate-Source Voltage

Drain Current - Continuous

- Pulsed

±20

(Note 1a)

11.5

P_D

Power Dissipation for Single Operation

2.5

(Note 1b)

(Note 1c)

1.2

T_J,T_STG

Operating and Storage Temperature Range

-55 to 150

°C

THERMAL CHARACTERISTICS

R_q_JA

R_q_JC

Thermal Resistance, Junction-to-Ambient (Note 1a)

Thermal Resistance, Junction-to-Case

°C/W

(Note 1)

FDS6680 Rev.E1

Electrical Characteristics (T_A= 25 ^OC unless otherwise noted )

Symbol

Parameter

Conditions

Min

Typ

Max

Units

OFF CHARACTERISTICS

BV_DSS

Drain-Source Breakdown Voltage

V_GS= 0 V, I _D= 250 µA

Breakdown Voltage Temp. Coefficient

Zero Gate Voltage Drain Current

I_D= 250 µA, Referenced to 25 ^oC

mV/ ^oC

DBV_DSS/DT_J

I_DSS

V_DS= 24 V, V_GS= 0 V

µA

T_J= 55°C

I_GSSF

I_GSSR

Gate - Body Leakage, Forward

Gate - Body Leakage, Reverse

V_GS= 20 V, V_DS= 0 V

V_GS= -20 V, V_DS= 0 V

100

-100

ON CHARACTERISTICS (Note 2)

V_GS(th)

Gate Threshold Voltage

V_DS= V_GS, I_D= 250 µA

I_D= 250 µA, Referenced to 25 ^oC

1.7

-5

Gate Threshold Voltage Temp.Coefficient

Static Drain-Source On-Resistance

mV/^oC

DV_GS(th)/DT_J

R_DS(ON)

V_GS= 10 V, I_D= 11.5 A

0.0085

0.014

0.01

T_J=125°C

0.017

V_GS= 4.5 V, I_D= 9.5 A

V_GS= 10 V, V_DS= 5 V

V_DS= 15 V, I_D= 11.5 A

0.0125 0.015

I_D(ON)

g_FS

On-State Drain Current

Forward Transconductance

DYNAMIC CHARACTERISTICS

Input Capacitance

V_DS= 15 V, V_GS= 0 V,

f = 1.0 MHz

2070

510

iss

C_oss

C_rss

Output Capacitance

Reverse Transfer Capacitance

235

SWITCHING CHARACTERISTICS (Note 2)

t_D(on)

t_r

t_D(off)

t_f

Turn - On Delay Time

Turn - On Rise Time

V_DS= 15 V, I _D= 1 A

V_GS= 10 V , R_GEN= 6 W

Turn - Off Delay Time

Turn - Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Q_g

Q_gs

Q_gd

V_DS= 15 V, I_D= 11.5 A,

V_GS= 5 V

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

I_S

Maximum Continuous Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage

2.1

1.2

V_SD

V_GS= 0 V, I_S= 2.1 A (Note 2)

Notes:

1. R_q_JAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R_q_JCis guaranteed by

design while R_q_CAis determined by the user's board design.

a. 50^OC/W on a 1 in²pad

of 2oz copper.

b. 105^OC/W on a 0.04 in²

pad of 2oz copper.

c. 125^OC/W on a 0.006 in²pad

of 2oz copper.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

FDS6680 Rev.E1

Typical Electrical Characteristics

2.5

V_GS= 10V

4.5

4.0

6.0

5.0

V_GS= 3.5V

4.0

3.5

4.5

1.5

5.0

6.0

3.0

0.5

1.5

2.5

, DRAIN-SOURCE VOLTAGE (V)

, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.8

1.6

1.4

1.2

0.04

0.03

0.02

0.01

I_D= 11.5A

V_GS=10V

I_D= 11.5A

T_A= 125^oC

T_A= 25^oC

0.8

0.6

-50

-25

100

125

150

, JUNCTION TEMPERATURE (°C)

,GATE-SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

Temperature.

T_J= -55°C

V_DS= 10V

V_GS=0V

25°C

125°C

T = 125°C

25°C

0.1

-55°C

0.01

0.001

0.0001

0.2

0.4

0.6

0.8

1.2

, GATE TO SOURCE VOLTAGE (V)

, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage

Variation with Source Current

and Temperature.

FDS6680 Rev.E1

Typical Electrical And Thermal Characteristics

3000

2000

V_DS= 10V

I_D= 11.5A

iss

15V

20V

1000

500

oss

rss

200

100

f = 1 MHz

V_GS= 0V

0.1

0.2

0.5

20 30

, GATE CHARGE (nC)

, DRAIN TO SOURCE VOLTAGE (V)

Figure 8. Capacitance Characteristics.

Figure 7. Gate Charge Characteristics.

100

SINGLE PULSE

R_q_JA=See Note 1c

T_A= 25°C

V_GS= 10V

SINGLE PULSE

0.1

R_q= See Note 1c

T_A= 25°C

0.01

0.1

0.001

0.01

0.1

100 300

0.2

0.5

30 50

SINGLE PULSE TIME (SEC)

, DRAIN-SOURCE VOLTAGE (V)

Figure 10. Single Pulse Maximum Power

Dissipation.

Figure 9. Maximum Safe Operating Area.

D = 0.5

0.5

(t) = r(t) * R

0.2

=See Note 1c

0.1

0.05

P(pk)

0.02

0.01

t₁

t₂

T - T = P * R (t)

0.01

Single Pulse

0.005

Duty Cycle, D = t₁/t₂

0.002

0.001

0.0001

0.001

0.01

0.1

, TIME (sec)

100

300

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.

Transient thermal response will change depending on the circuit board design.

FDS6680 Rev.E1

SO-8 Tape and Reel Data and Package Dimensions

SOIC(8lds) Packaging

Configuration: Figure 1.0

Packaging Description:

SOIC-8 parts are shipped in tape. The carrier tape is

ELECTROSTATIC

SENSITIVE DEVICES

DO NO

RO NG

CTROS

ATIC

made from dissipative (carbon filled) polycarbonate

CTRO

AGN

AG NE

R R ADIO ACTIVE FI ELD S

TNR DATE

PT NUMB E

resin. The cover tape is a multilayer film (Heat Activated

Adhesive in nature) primarily composed of polyester film,

adhesive layer, sealant, and anti-static sprayed agent.

These reeled parts in standard option are shipped with

2,500 units per 13" or 330cm diameter reel. The reels are

dark blue in color and is made of polystyrene plastic (anti-

static coated). Other option comes in 500 units per 7" or

177cm diameter reel. This and some other options are

further described in the Packaging Information table.

PEEL STRENGTH MIN ______________gms

MAX _____________gms

Antistatic Cover Tape

ESD Label

These full reels are individually barcode labeled and

placed inside

a standard intermediate box (illustrated in

figure 1.0) made of recyclable corrugated brown paper.

One box contains two reels maximum. And these boxes

are placed inside

comes in different sizes depending on the number of parts

shipped.

a barcode labeled shipping box which

Static Dissipative

Embossed Carrier Tape

F63TNR

Label

NDS

9959

852

Customized

Label

Pin 1

SOIC (8lds) Packaging Information

Standard

L86Z

F011

D84Z

Packaging Option

(no flow code)

SOIC-8 Unit Orientation

Packaging type

TNR

2,500

Rail/Tube

TNR

4,000

TNR

500

Qty per Reel/Tube/Bag

Reel Size

13" Dia

7" Dia

Box Dimension (mm)

Max qty per Box

343x64x343 530x130x83 343x64x343 184x187x47

5,000

0.0774

0.6060

30,000

0.0774

8,000

0.0774

0.9696

1,000

0.0774

0.1182

Weight per unit (gm)

Weight per Reel (kg)

Note/Comments

343mm x 342mm x 64mm

Standard Intermediate box

ESD Label

F63TNR Label sample

F63TNLabel

ESD Label

F63TN Label

LOT: CBVK741B019

FSID: FDS9953A

QTY: 2500

SPEC:

D/C1: D9842

D/C2:

QTY1:

QTY2:

SPEC REV:

CPN:

N/F: F

(F63TNR)3

SOIC(8lds) Tape Leader and Trailer

Configuration: Figure 2.0

Carrier Tape

Cover Tape

Components

Trailer Tape

Leader Tape

640mm minimum or

80 empty pockets

1680mm minimum or

210 empty pockets

July 1999, Rev. B

SO-8 Tape and Reel Data and Package Dimensions, continued

SOIC(8lds) Embossed Carrier Tape

Configuration: Figure 3.0

User Direction of Feed

Dimensions are in millimeter

Pkg type

0.450

+/-

0.150

(8lds)

SOIC

(12mm)

6.50

+/-0.10

5.30

+/-0.10

12.0

+/-0.3

1.55

+/-0.05

1.60

+/-0.10

1.75

+/-0.10

10.25

min

5.50

+/-0.05

8.0

+/-0.1

4.0

+/-0.1

2.1

+/-0.10

9.2

+/-0.3

0.06

+/-0.02

Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481

rotational and lateral movement requirements (see sketches A, B, and C).

0.5mm

maximum

20 deg maximum

Typical

component

cavity

center line

0.5mm

maximum

20 deg maximum component rotation

Typical

component

center line

Sketch A (Side or Front Sectional View)

Component Rotation

Sketch C (Top View)

Component lateral movement

Sketch B (Top View)

Component Rotation

SOIC(8lds) Reel Configuration: Figure 4.0

W1 Measured at Hub

Dim A

Max

Dim A

max

See detail AA

Dim N

7"Diameter Option

B Min

Dim C

See detail AA

Dim D

min

13" Diameter Option

W2 max Measured at Hub

DETAIL AA

Dim W2

Dimensions are in inches and millimeters

Reel

Option

Tape Size

12mm

Dim A

Dim B

Dim C

Dim D

Dim N

Dim W1

Dim W3 (LSL-USL)

7.00

177.8

0.059

1.5

512 +0.020/-0.008

13 +0.5/-0.2

0.795

20.2

2.165

0.488 +0.078/-0.000

12.4 +2/0

0.724

18.4

0.469 – 0.606

11.9 – 15.4

7" Dia

13.00

330

0.059

1.5

512 +0.020/-0.008

13 +0.5/-0.2

0.795

20.2

7.00

178

0.488 +0.078/-0.000

12.4 +2/0

0.724

18.4

0.469 – 0.606

11.9 – 15.4

12mm

13" Dia

1998 Fairchild Semiconductor Corporation

July 1999, Rev. B

SO-8 Tape and Reel Data and Package Dimensions, continued

SOIC-8 (FS PKG Code S1)

1 : 1

Scale 1:1 on letter size paper

Dimensions shown below are in:

inches [millimeters]

Part Weight per unit (gram): 0.0774

September 1998, Rev. A

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

ACEx™

CoolFET™

ISOPLANAR™

MICROWIRE™

POP™

PowerTrench™

QFET™

TinyLogic™

UHC™

VCX™

CROSSVOLT™

E²CMOS^TM

FACT™

FACT Quiet Series™

QS™

FAST^®

Quiet Series™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

FASTr™

GTO™

HiSeC™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD

DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT

RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or

In Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

FDS6680相关文章

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FDS6680产品参数

型号:	FDS6680
生命周期：	Obsolete
包装说明：	,
Reach Compliance Code：	compliant
风险等级：	5.68
Base Number Matches：	1

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