FDS8978现货热卖使用介绍供应商报价哪里找芯片批发报价-中国IC网-芯三七

当前位置：IC37首页_>F字母起始型号索引_>F字母起始型号索引第292页更新时间：2024-10-24 09:00:02

产品型号FDS8978的概述

芯片FDS8978的概述 FDS8978是一种高度集成的功率MOSFET驱动器，常用于DC-DC转换器、开关电源及其他电源管理应用。该芯片采用先进的制造工艺，旨在满足现代电子设备对效率与性能的苛刻要求。FDS8978拥有较低的导通电阻和快速的开关速度，使其在电源转换领域表现出色，能够有效降低功耗并提高系统的稳定性。该芯片的设计理念旨在适应广泛的工作条件，确保其在各种温度和电气环境下均能可靠工作。此外，FDS8978还具备多种保护功能，如过流保护和热关断，以增强其安全性和耐用性。这使得FDS8978在许多条件下都能稳定运行，特别是在高负载或极端条件下，保持系统的高效运作。芯片FDS8978的详细参数 FDS8978的技术参数如下： 1. 导通电阻：FDS8978的R_DS(on)在25°C时为20mΩ，随着温度的升高，电子迁移率降低，导通电阻会适当增加，但整体仍处于低范围内。 ...

产品型号FDS8978的Datasheet PDF文件预览

July 2005

FDS8978

Dual N-Channel PowerTrench^®MOSFET

30V, 7.5A, 18mΩ

Features

General Description

r_DS(ON)= 18mΩ, V_GS= 10V, I_D= 7.5A

This N-Channel MOSFET has been designed specifically to

improve the overall efficiency of DC/DC converters using

either synchronous or conventional switching PWM

controllers. It has been optimized for low gate charge, low

r_DS(ON)= 21mΩ, V_GS= 4.5V, I_D= 6.9A

High performance trench technology for extremely low

r_DS(ON)

r_DS(ON)and fast switching speed.

Low gate charge

High power and current handling capability

100% Rg Tested

RoHS Compliant

MOSFET Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

V_DSS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

Drain Current

±20

Continuous (T_A= 25^oC, V_GS= 10V, R_θJA= 78^oC/W)

Continuous (T_A= 25^oC, V_GS= 4.5V, R_θJA= 78^oC/W)

Pulsed

7.5

6.9

I_D

Figure 4

E_AS

Single Pulse Avalanche Energy (Note 1)

Power dissipation

Derate above 25^oC

1.6

P_D

mW/^oC

^oC

T_J, T_STG

Operating and Storage Temperature

-55 to 150

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance, Junction to Ambient (Note 2)

^oC/W

Thermal Resistance, Junction to Ambient (Note 3)

Thermal Resistance, Junction to Ambient (Note 4)

170

183

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

Tape Width

12mm

Quantity

FDS8978

SO-8

330mm

2500 units

FDS8978 Rev. A

www.fairchildsemi.com

Electrical Characteristics T_A= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

B_VDSS

Drain to Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate to Source Leakage Current

I_D= 250µA, V_GS= 0V

V_DS= 24V

I_DSS

µA

V_GS= 0V

T_A= 150^oC

250

±100

I_GSS

V_GS= ±20V

On Characteristics

V_GS(TH)

Gate to Source Threshold Voltage

V_GS= V_DS, I_D= 250µA

I_D= 7.5A, V_GS= 10V

I_D= 6.9A, V_GS= 4.5V

1.2

2.5

0.014 0.018

0.017 0.021

r_DS(ON)

Drain to Source On Resistance

Ω

I_D= 7.5A, V_GS= 10V,

T_A= 150^oC

0.022 0.029

Dynamic Characteristics

C_ISS

C_OSS

C_RSS

R_G

Input Capacitance

907

191

112

1.2

Ω

V_DS= 15V, V_GS= 0V,

f = 1MHz

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

f = 1MHz

4.0

V_GS=10V

Q_g

Total Gate Charge

V_DD= 15V

I_D= 7.5A

V_GS= 5V

Q_gs

Gate to Source Gate Charge

Gate Charge Threshold to Plateau

Gate to Drain “Miller” Charge

2.3

1.5

3.3

Q_gs2

Q_gd

Switching Characteristics (V_GS= 10V)

t_ON

t_d(ON)

t_r

Turn-On Time

Turn-On Delay Time

Rise Time

10.5

55.5

V_DD= 15V, I_D= 7.5A

V_GS= 10V, R_GS= 16Ω

t_d(OFF)

t_f

Turn-Off Delay Time

Fall Time

t_OFF

Turn-Off Time

108

Drain-Source Diode Characteristics

I_SD= 7.5A

1.25

1.0

V_SD

Source to Drain Diode Voltage

I_SD= 2.1A

t_rr

Reverse Recovery Time

I_SD= 7.5A, dI_SD/dt=100A/µs

Q_RR

Reverse Recovered Charge

Notes:

1: Starting T = 25°C, L = 1mH, I = 7.5A, V = 30V, V = 10V.

2: R

3: R

4: R

is 78 C/W when mounted on a 0.5 in copper pad on FR-4 at 100 seconds.

is 191 C/W when mounted on a 0.027 in copper pad on FR-4 at 1000 seconds.

is 228 C/W when mounted on a 0.006 in copper pad on FR-4 at 1000 seconds.

θJA

www.fairchildsemi.com

FDS8978 Rev. A

Typical Characteristics T_A= 25°C unless otherwise noted

1.2

1.0

0.8

0.6

0.4

0.2

V_GS= 10V

V_GS= 4.5V

R_θJA= 78°C/W

100

125

150

100

125

150

, AMBIENT TEMPERATURE ( C)

T_A, AMBIENT TEMPERATURE (^oC)

Figure 1. Normalized Power Dissipation vs

Ambient Temperature

Figure 2. Maximum Continuous Drain Current vs

Ambient Temperature

DUTY CYCLE - DESCENDING ORDER

0.5

=78 C/W

0.2

0.1

θJA

0.05

0.02

0.01

0.1

0.01

SINGLE PULSE

NOTES:

DUTY FACTOR: D = t /t

PEAK T = P

x Z

x R + T

θJA A

θJA

0.001

-5

-4

-3

-2

-1

t, RECTANGULAR PULSE DURATION (s)

Figure 3. Normalized Maximum Transient Thermal Impedance

1000

100

T_A= 25^oC

TRANSCONDUCTANCE

MAY LIMIT CURRENT

IN THIS REGION

FOR TEMPERATURES

ABOVE 25^oC DERATE PEAK

CURRENT AS FOLLOWS:

V_GS= 10V

V_GS= 4.5V

150 - T_A

I = I₂₅

125

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

10¹

10²

10³

t, PULSE WIDTH (s)

Figure 4. Peak Current Capability

www.fairchildsemi.com

FDS8978 Rev. A

Typical Characteristics T_A= 25°C unless otherwise noted

100

V_DS= 6V

If R = 0

= (L)(I )/(1.3*RATED BV

- V

)

DSS

If R ≠ 0

= (L/R)ln[(I *R)/(1.3*RATED BV

- V ) +1]

DSS

T_A= 150^oC

STARTING T = 25 C

25^oC

-25^oC

STARTING T = 150 C

0.01

0.1

100

1.7

2.0

2.3

2.6

2.9

3.2

, TIME IN AVALANCHE (ms)

V_GS, GATE TO SOURCE VOLTAGE (V)

NOTE: Refer to Fairchild Application Notes AN7514 and AN7515

Figure 5. Unclamped Inductive Switching

Capability

Figure 6. Transfer Characteristics

PULSE DURATION = 80µs

VGS = 10V

DUTY CYCLE = 0.5% MAX

5.0V

= 7.5A

3.5V

3.0V

= 1A

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

V_DS, DRAIN-SOURCE VOLTAGE (V)

, GATE TO SOURCE VOLTAGE (V)

Figure 7. Saturation Characteristics

Figure 8. Drain to Source On Resistance vs Drain

Current

1.6

1.2

PULSE DURATION = 80µs

= V , I = 250µA

DUTY CYCLE = 0.5% MAX

1.4

1.0

0.8

0.6

1.2

1.0

0.8

= 10V, I = 7.5A

-80

-40

120

160

-80

-40

120

160

T , JUNCTION TEMPERATURE ( C)

Figure 9. Normalized Drain to Source On

Resistance vs Junction Temperature

Figure 10. Normalized Gate Threshold Voltage vs

Junction Temperature

www.fairchildsemi.com

FDS8978 Rev. A

Typical Characteristics T_A= 25°C unless otherwise noted

1.10

1.05

1.00

0.95

0.90

2000

1000

= 250µA

= C + C

GS GD

ISS

≅ C + C

OSS

= C

RSS

= 0V, f = 1MHz

-80

-40

120

160

0.1

T , JUNCTION TEMPERATURE ( C)

, DRAIN TO SOURCE VOLTAGE (V)

Figure 11. Normalized Drain to Source

Breakdown Voltage vs Junction Temperature

Figure 12. Capacitance vs Drain to Source

Voltage

= 15V

WAVEFORMS IN

DESCENDING ORDER:

= 7.5A

= 1A

Q , GATE CHARGE (nC)

Figure 13. Gate Charge Waveforms for Constant Gate Currents

www.fairchildsemi.com

FDS8978 Rev. A

Test Circuits and Waveforms

DSS

VARY t TO OBTAIN

REQUIRED PEAK I

DUT

0.01Ω

Figure 14. Unclamped Energy Test Circuit

Figure 15. Unclamped Energy Waveforms

g(TOT)

= 10V

g(5)

gs2

= 5V

DUT

= 1V

g(REF)

g(TH)

g(REF)

Figure 16. Gate Charge Test Circuit

Figure 17. Gate Charge Waveforms

OFF

d(OFF)

d(ON)

90%

10%

DUT

90%

50%

PULSE WIDTH

10%

Figure 18. Switching Time Test Circuit

Figure 19. Switching Time Waveforms

www.fairchildsemi.com

FDS8978 Rev. A

Thermal Resistance vs. Mounting Pad Area

The maximum rated junction temperature, T_JM, and the

thermal resistance of the heat dissipating path determines

the maximum allowable device power dissipation, P_DM, in an

maximum transient thermal impedance curve.

Thermal resistances corresponding to other copper areas

can be obtained from Figure 21 or by calculation using

Equation 2. The area, in square inches is the top copper

area including the gate and source pads.

application.

Therefore the application’s ambient

temperature, T_A(^oC), and thermal resistance R_θJA(^oC/W)

must be reviewed to ensure that T_JMis never exceeded.

Equation 1 mathematically represents the relationship and

serves as the basis for establishing the rating of the part.

= 64 +

-------------------------------

(EQ. 2)

θJA

0.23 + Area

– T )

(EQ. 1)

= ------------------------------

R_θJA

The transient thermal impedance (Z_θJA) is also effected by

varied top copper board area. Figure 22 shows the effect of

copper pad area on single pulse transient thermal

impedance. Each trace represents a copper pad area in

square inches corresponding to the descending list in the

graph. Spice and SABER thermal models are provided for

each of the listed pad areas.

In using surface mount devices such as the SO8 package,

the environment in which it is applied will have a significant

influence on the part’s current and maximum power

dissipation ratings. Precise determination of P_DMis complex

and influenced by many factors:

Copper pad area has no perceivable effect on transient

thermal impedance for pulse widths less than 100ms. For

pulse widths less than 100ms the transient thermal

impedance is determined by the die and package.

Therefore, CTHERM1 through CTHERM5 and RTHERM1

through RTHERM5 remain constant for each of the thermal

models. A listing of the model component values is available

in Table 1.

1. Mounting pad area onto which the device is attached and

whether there is copper on one side or both sides of the

board.

2. The number of copper layers and the thickness of the

board.

3. The use of external heat sinks.

4. The use of thermal vias.

200

5. Air flow and board orientation.

= 64 + 26/(0.23+Area)

θJA

6. For non steady state applications, the pulse width, the

duty cycle and the transient thermal response of the part,

the board and the environment they are in.

150

Fairchild provides thermal information to assist the

designer’s preliminary application evaluation. Figure 21

defines the R_θJAfor the device as a function of the top

copper (component side) area. This is for a horizontally

positioned FR-4 board with 1oz copper after 1000 seconds

of steady state power with no air flow. This graph provides

the necessary information for calculation of the steady state

junction temperature or power dissipation. Pulse

applications can be evaluated using the Fairchild device

Spice thermal model or manually utilizing the normalized

100

0.001

0.01

0.1

AREA, TOP COPPER AREA (in )

Figure 21. Thermal Resistance vs Mounting

Pad Area

150

COPPER BOARD AREA - DESCENDING ORDER

0.04 in

0.28 in

0.52 in

0.76 in

1.00 in

120

-1

t, RECTANGULAR PULSE DURATION (s)

Figure 22. Thermal Impedance vs Mounting Pad Area

www.fairchildsemi.com

FDS8978 Rev. A

PSPICE Electrical Model

.SUBCKT FDS8878 2 1 3

*February 2005

Ca 12 8 7.8e-10

Cb 15 14 7.8e-10

Cin 6 8 .78e-9

LDRAIN

DPLCAP

DRAIN

Dbody 7 5 DbodyMOD

Dbreak 5 11 DbreakMOD

Dplcap 10 5 DplcapMOD

RLDRAIN

RSLC1

DBREAK

RSLC2

Ebreak 11 7 17 18 32.9

Eds 14 8 5 8 1

Egs 13 8 6 8 1

Esg 6 10 6 8 1

Evthres 6 21 19 8 1

Evtemp 20 6 18 22 1

ESLC

DBODY

RDRAIN

EBREAK

MWEAK

ESG

EVTHRES

LGATE

EVTEMP

RGATE

GATE

It 8 17 1

MMED

MSTRO

Lgate 1 9 5.29e-9

Ldrain 2 5 1.0e-9

Lsource 3 7 0.18e-9

RLGATE

LSOURCE

CIN

SOURCE

RSOURCE

RLgate 1 9 52.9

RLdrain 2 5 10

RLsource 3 7 1.8

RLSOURCE

S1A

S2A

RBREAK

Mmed 16 6 8 8 MmedMOD

Mstro 16 6 8 8 MstroMOD

Mweak 16 21 8 8 MweakMOD

RVTEMP

S1B

S2B

VBAT

EGS

EDS

Rbreak 17 18 RbreakMOD 1

Rdrain 50 16 RdrainMOD 1.6e-3

Rgate 9 20 2.3

RSLC1 5 51 RSLCMOD 1e-6

RSLC2 5 50 1e3

RVTHRES

Rsource 8 7 RsourceMOD 8.9e-3

Rvthres 22 8 RvthresMOD 1

Rvtemp 18 19 RvtempMOD 1

S1a 6 12 13 8 S1AMOD

S1b 13 12 13 8 S1BMOD

S2a 6 15 14 13 S2AMOD

S2b 13 15 14 13 S2BMOD

Vbat 22 19 DC 1

ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*170),5))}

.MODEL DbodyMOD D (IS=2.0E-12 IKF=10 N=1.01 RS=7.0e-3 TRS1=8e-4 TRS2=2e-7

+ CJO=3.5e-10 M=0.55 TT=7e-11 XTI=2)

.MODEL DbreakMOD D (RS=0.2 TRS1=1e-3 TRS2=-8.9e-6)

.MODEL DplcapMOD D (CJO=3.8e-10 IS=1e-30 N=10 M=0.45)

.MODEL MstroMOD NMOS (VTO=2.36 KP=150 IS=1e-30 N=10 TOX=1 L=1u W=1u)

.MODEL MmedMOD NMOS (VTO=1.95 KP=5.0 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=2.3)

.MODEL MweakMOD NMOS (VTO=1.57 KP=0.02 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=23 RS=0.1)

.MODEL RbreakMOD RES (TC1=8.3e-4 TC2=-8e-7)

.MODEL RdrainMOD RES (TC1=15e-3 TC2=0.1e-5)

.MODEL RSLCMOD RES (TC1=1e-4 TC2=1e-6)

.MODEL RsourceMOD RES (TC1=1e-3 TC2=3e-6)

.MODEL RvtempMOD RES (TC1=-1.8e-3 TC2=2e-7)

.MODEL RvthresMOD RES (TC1=-2.0e-3 TC2=-6e-6)

MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-4 VOFF=-3.5)

.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-3.5 VOFF=-4)

.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-1.5 VOFF=-1.0)

.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-1.0 VOFF=-1.5).ENDSNote: For further discussion of the PSPICE mod-

el, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global

Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank

Wheatley.

www.fairchildsemi.com

FDS8978 Rev. A

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not

intended to be an exhaustive list of all such trademarks.

ACEx™

FACT™

i-Lo™

PACMAN™

SPM™

ActiveArray™

Bottomless™

Build it Now™

CoolFET™

CROSSVOLT™ FRFET™

DOME™

EcoSPARK™

E²CMOS™

EnSigna™

FACT Quiet Series™ ImpliedDisconnect™ POP™

Stealth™

FAST^®

FASTr™

FPS™

IntelliMAX™

ISOPLANAR™

LittleFET™

Power247™

PowerEdge™

PowerSaver™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

TinyLogic^®

MICROCOUPLER™ PowerTrench^®

GlobalOptoisolator™ MicroFET™

QFET^®

GTO™

HiSeC™

I²C™

MicroPak™

MICROWIRE™

MSX™

QS™

QT Optoelectronics™ TINYOPTO™

Quiet Series™

RapidConfigure™

RapidConnect™

µSerDes™

TruTranslation™

UHC™

MSXPro™

Across the board. Around the world.™ OCX™

UltraFET^®

UniFET™

The Power Franchise^®

OCXPro™

Programmable Active Droop™

OPTOLOGIC^®

SILENT SWITCHER^®VCX™

OPTOPLANAR™

SMART START™

Wire™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or In

Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. I16

www.fairchildsemi.com

FDS8978 Rev. A

FDS8978相关文章

配单直通车

首天国际（深圳）科技有限公司服务专线: 0755-82807802/82807803 在线联系:

QQ：528164397 复制

QQ：1318502189 复制

深圳市中利达电子科技有限公司服务专线: 0755-83200645/13686833545 在线联系:

QQ：1902134819 复制

QQ：2881689472 复制

北京元坤伟业科技有限公司服务专线: 010-62104931621064316210489162104791 在线联系:

QQ：857273081 复制

QQ：1594462451 复制

柒号芯城电子商务（深圳）有限公司服务专线: 0755-83209937 在线联系:

QQ：2881677436 复制

QQ：2881620402 复制

深圳市芯福林电子有限公司服务专线: 13418564337 在线联系:

QQ：2881495808 复制

QQ：308365177 复制

FDS8978产品参数

型号:	FDS8978
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Active
IHS 制造商：	ROCHESTER ELECTRONICS LLC
零件包装代码：	SOT
包装说明：	ROHS COMPLIANT, SOP-8
针数：	8
Reach Compliance Code：	unknown
风险等级：	5.37
其他特性：	ULTRA-LOW RESISTANCE
雪崩能效等级（Eas）：	57 mJ
配置：	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压：	30 V
最大漏极电流 (ID)：	6.9 A
最大漏源导通电阻：	0.018 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-G8
JESD-609代码：	e3
湿度敏感等级：	1
元件数量：	2
端子数量：	8
工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性/信道类型：	N-CHANNEL
最大脉冲漏极电流 (IDM)：	49 A
认证状态：	COMMERCIAL
表面贴装：	YES
端子面层：	MATTE TIN
端子形式：	GULL WING
端子位置：	DUAL
处于峰值回流温度下的最长时间：	30
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

电子百科

产品导航

产品型号FDS8978的概述

产品型号FDS8978的Datasheet PDF文件预览

FDS8978相关产品

FDS8978相关文章

IC37:专业IC行业平台