FDS9934C各脚功能电路原理芯片引脚定义引脚图及功能IC贸易商-中国IC网-芯三七

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产品型号FDS9934C的概述

芯片 FDS9934C 的概述 FDS9934C是一种双通道N沟道MOSFET，广泛应用于各种电子电路中，如电源管理、DC-DC转换器、负载开关等领域。该芯片具有低导通电阻和快速开关速度的特点，能够有效提高整个电路的工作效率和稳定性。以其出色的性能，FDS9934C常被设计师选用作为开关元件，在功率应用中表现出色。该芯片的主要工作原理基于MOSFET的控制机制，通过栅极电压的变化来控制源极与漏极之间的电流流动。这使得其在轻负载和重负载情况下均能保持良好的性能，并确保系统的稳定运行定义。芯片 FDS9934C 的详细参数 FDS9934C的主要参数如下： 1. 最大漏极-源极电压(V_DS): 30V 2. 最大漏极电流(I_D): 9.5A（在25°C下） 3. 最大栅极-源极电压(V_GS): ±20V 4. 导通电阻(R_DS(on)): 12 mΩ（在10V V_GS时） 5...

产品型号FDS9934C的Datasheet PDF文件预览

February 2004

FDS9934C

Complementary

Features

These dual N- and P-Channel enhancement mode

power field effect transistors are produced using

Fairchild Semiconductor’s advanced PowerTrench

process that has been especially tailored to minimize

on-state ressitance and yet maintain superior switching

performance.

Q1: 6.5 A, 20 V. R_DS(ON)= 30 mW @ V_GS= 4.5 V

R_DS(ON)= 43 mW @ V_GS= 2.5 V.

Q2: –5 A, –20 V,R_DS(ON)= 55 mW @ V_GS= –4.5 V

R_DS(ON)= 90 mW @ V_GS= –2.5 V

These devices are well suited for low voltage and

battery powered applications where low in-line power

loss and fast switching are required.

SO-8

Pin 1

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

Parameter

Ratings

Units

–20

V_DSS

V_GSS

I_D

Drain-Source Voltage

±12

–5

±10

6.5

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

(Note 1a)

–30

P_D

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

(Note 1c)

1.6

0.9

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1)

R_qJA

°C/W

Thermal Resistance, Junction-to-Case

R_qJC

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDS9934C

13’’

12mm

2500 units

FDS9934C Rev C(W)

Ó2004 Fairchild Semiconductor Corporation

Electrical Characteristics

T_A= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Type Min Typ Max Units

Off Characteristics

BV_DSS

Drain-Source Breakdown

V_GS= 0 V,

I_D= 250 mA, Referenced to 25°C

I_D= –250 mA, Referenced to 25°C

I_D= 250 µA

I_D= –250 µA

–20

Voltage

Breakdown Voltage

Temperature Coefficient

–14

DBVDSS

DT_J

mV/°C

I_DSS

Zero Gate Voltage Drain

Current

Gate-Body Leakage

V_DS= 16V,

V_GS= 0 V

–1

±100

V_DS= –16V, V_GS= 0 V

V_GS= ±8 V, V_DS= 0 V

V_GS= ±12 V, V_DS= 0 V

I_GSS

V_GS(th)

Gate Threshold Voltage

V_DS= V_GS

I_D= 250 uA, Referenced to 25°C

I_D= 250 µA

0.6

–0.8

–1

–3

1.5

–1.5

Gate Threshold Voltage

Temperature Coefficient

DVGS(th)

?DT_J

R_DS(on)

mV/°C

Static Drain-Source

On-Resistance

V_GS= 4.5 V, I_D= 6.5 A

V_GS= 2.5 V, I_D= 5.4 A

V_GS= 4.5 V, I_D=6.5A, T_J=125°C

V_GS= –4.5 V, I_D= –3.2 A

V_GS= –2.5 V, I_D= –1.0 A

V_GS= –4.5 V,I_D= –3.2 A, T_J=125°C

V_GS= 4.5V, V_DS= 5 V

V_GS= –4.5 V, V_DS= – 5 V

V_DS= –5 V, I_D= 6.5 A

V_DS= 5 V,

I_D(on)

g_FS

On-State Drain Current

–16

Forward Transcoductance

I_D= – 5.5 A

V_GS= 0 V,

Dynamic Characteristics

C_iss

C_oss

C_rss

R_G

Input Capacitance

650

955

150

215

115

1.4

4.9

V_DS= 10V,

f = 1.0 MHz

V_DS= –10 V, V_GS= 0 V,

f = 1.0 MHz

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

V_GS= 15 mV, f = 1.0 MHz

FDS9934C Rev C(W)

Electrical Characteristics (continued)

T_A= 25°C unless otherwise noted

Symbol Parameter Test Conditions

Type Min Typ Max Units

Switching Characteristics (Note 2)

t_d(on)

t_r

t_d(off)

t_f

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

V_DD= 10 V, I_D= 1 A,

V_GS= 4.5V, R_GEN= 6W

V_DD= –6V, I_D= –1A,

V_GS= –4.5V, R_GEN= 6W

Q_g

Q_gs

Q_gd

6.2

8.7

1.2

2.1

1.7

2.1

V_DS= 10 V, I_D= 3 A, V_GS= 4.5V

_DS= –6 V, I_D= –3.2 A,V_GS= –4.5 V

Drain–Source Diode Characteristics and Maximum Ratings

I_S

Maximum Continuous Drain-Source Diode Forward Current

1.3

–1.3

1.2

V_SD

t_rr

Drain-Source Diode Forward V_GS= 0 V, I_S= 1.3 A (Note 2)

0.73

–0.8

Voltage

V_GS= 0 V, I_S= -2.0 A (Note 2)

–1.2

Diode Reverse Recovery

Time

Diode Reverse Recovery

Charge

I_F= 6.5 A, d_iF/d_t= 100 A/µs

Q_rr

I_F= -3.2 A, d_iF/d_t= 100 A/µs

Notes:

1. R_qJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

the drain pins. R_qJCis guaranteed by design while R_qCAis determined by the user's board design.

a) 78°/W when

mounted on a

0.5 in²pad of 2 oz

copper

b) 125°/W when

c) 135°/W when mounted on a

minimum pad.

mounted on a .02 in²

pad of 2 oz copper

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300ms, Duty Cycle < 2.0%

FDS9934C Rev C(W)

Typical Characteristics: Q1 (N-Channel)

2.4

2.2

V_GS= 4.5V

2.5V

V_GS= 2.0V

3.5

3.0V

1.8

1.6

1.4

1.2

2.5V

2.0V

3.0V

3.5V

4.0V

4.5V

0.8

0.5

1.5

I_D, DIRAIN CURRENT (A)

V_DS, DRAIN TO SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

0.11

1.6

I_D= 6.5A

V_GS= 4.5V

I_D= 3.25A

0.09

0.07

1.4

1.2

T_A= 125^oC

0.05

0.8

0.6

0.03

T_A= 25^oC

0.01

-50

-25

100

125

150

T_J, JUNCTION TEMPERATURE (^oC)

V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with

Temperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

V_GS= 0V

T_A= -55^oC

V_DS= 5V

125^oC

T_A= 125^oC

25^oC

0.1

-55^oC

0.01

0.001

0.0001

0.2

0.4

0.6

0.8

1.2

1.5

2.5

V_SD, BODY DIODE FORWARD VOLTAGE (V)

V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDS9934C Rev C(W)

Typical Characteristics: Q1 (N-Channel)

1000

800

600

400

200

f = 1 MHz

V_GS= 0 V

V_DS= 5V

15V

I_D= 3 A

10V

C_iss

C_oss

C_rss

Q_g, GATE CHARGE (nC)

V_DS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics.

Figure 8. Capacitance Characteristics.

100

SINGLE PULSE

R_qJA= 135°C/W

100ms

R_DS(ON)LIMIT

T_A= 25°C

1ms

10ms

100ms

10s

V_GS= 4.5V

SINGLE PULSE

0.1

0.01

_qJA= 135^oC/W

T_A= 25^oC

0.01

0.1

100

0.001

0.01

0.1

100

V_DS, DRAIN-SOURCE VOLTAGE (V)

t₁, TIME (sec)

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum

Power Dissipation.

FDS9934C Rev C(W)

Typical Characteristics: Q2 (P-Channel)

1.8

1.6

1.4

1.2

V_GS= -4.5V

-3.5V

V_GS=-2.5V

-4.0V

-3.0V

-2.5V

-3.5V

-4.0V

-4.5V

-2.0V

0.8

-V_DS, DRAIN TO SOURCE VOLTAGE (V)

-I_D, DRAIN CURRENT (A)

Figure 11. On-Region Characteristics.

Figure 12. On-Resistance Variation with

Drain Current and Gate Voltage.

1.4

0.14

I_D= -2.5A

I_D= -5A

V_GS= -4.5V

1.3

0.12

0.1

1.2

1.1

0.08

T_A= 125^oC

0.06

T_A= 25^oC

0.04

0.9

0.8

0.02

-50

-25

100

125

150

T_J, JUNCTION TEMPERATURE (^oC)

-V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 13. On-Resistance Variation with

Temperature.

Figure 14. On-Resistance Variation with

Gate-to-Source Voltage.

100

T_A= -55^oC

125^oC

25^oC

V_GS=0V

V_DS= -5V

T_A= 125^oC

0.1

25^oC

0.01

-55^oC

0.001

0.0001

0.4

0.8

1.2

1.6

-V_SD, BODY DIODE FORWARD VOLTAGE (V)

-V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 15. Transfer Characteristics.

Figure 16. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDS9934C Rev C(W)

Typical Characteristics: Q2 (P-Channel)

1600

1200

800

400

f = 1 MHz

V_GS= 0 V

I_D= -5A

V_DS= -4V

-8V

C_iss

-6V

C_oss

C_rss

-V_DS, DRAIN TO SOURCE VOLTAGE (V)

Q_g, GATE CHARGE (nC)

Figure 17. Gate Charge Characteristics.

Figure 18. Capacitance Characteristics.

100

SINGLE PULSE

R_qJA= 135°C/W

T_A= 25°C

100ms

R_DS(ON)LIMIT

1ms

10ms

100ms

10s

V_GS= -4.5V

SINGLE PULSE

0.1

_qJA= 135^oC/W

T_A= 25^oC

0.01

0.001

0.01

0.1

100

1000

0.1

100

-V_DS, DRAIN-SOURCE VOLTAGE (V)

t₁, TIME (sec)

Figure 19. Maximum Safe Operating Area.

Figure 20. Single Pulse Maximum

Power Dissipation.

D = 0.5

_qJA(t) = r(t) * R_qJA

0.2

_qJA= 135^oC/W

0.1

0.05

0.02

P(pk)

t₁

0.01

t₂

0.01

T_J- T_A= P * R_qJA(t)

Duty Cycle, D = t₁/ t₂

SINGLE PULSE

0.001

0.0001

0.001

0.01

0.1

100

1000

t₁, TIME (sec)

Figure 21. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.

Transient thermal response will change depending on the circuit board design.

FDS9934C Rev C(W)

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

ACEx™

POP™

SuperFET™

ISOPLANAR™

LittleFET™

MICROCOUPLER™

MicroFET™

MicroPak™

MICROWIRE™

MSX™

MSXPro™

OCX™

OCXPro™

FACT Quiet Series™

FAST

FASTr™

FPS™

FRFET™

ActiveArray™

Bottomless™

CoolFET™

CROSSVOLT™

DOME™

EcoSPARK™

E²CMOS^TM

EnSigna^TM

FACT™

Power247™

PowerTrench

QFET

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

QS™

QT Optoelectronics™ TinyLogic

GlobalOptoisolator™

GTO™

Quiet Series™

RapidConfigure™

RapidConnect™

TINYOPTO™

TruTranslation™

UHC™

HiSeC™

I²C™

SILENT SWITCHER UltraFET

ImpliedDisconnect™

SMART START™

SPM™

Stealth™

VCX™

OPTOLOGIC

OPTOPLANAR™

PACMAN™

Across the board. Around the world.™

The Power Franchise™

ProgrammableActive Droop™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVESTHE RIGHTTO MAKE CHANGES WITHOUTFURTHER NOTICETOANY

PRODUCTS HEREINTO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOTASSUMEANYLIABILITY

ARISING OUTOFTHEAPPLICATION OR USE OFANYPRODUCTOR CIRCUITDESCRIBED HEREIN; NEITHER DOES IT

CONVEYANYLICENSE UNDER ITS PATENTRIGHTS, NORTHE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or

In Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. I7

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