FQD10N20CTM应用文章市场行情现货热卖使用介绍供应商报价-中国IC网-芯三七

当前位置：IC37首页_>F字母起始型号索引_>F字母起始型号索引第292页更新时间：2024-12-04 17:35:06

产品型号FQD10N20CTM的概述

芯片FQD10N20CTM概述 FQD10N20CTM是一款高性能的N-channelMOSFET，广泛应用于电源管理、开关电源转换器及其他各种功率电子设备。这款芯片的设计旨在实现低导通阻抗和高开关速度，使其在高频率和高电流应用中表现出色。由于其良好的热性能和操作稳定性，它适合在苛刻的环境下工作，成为现代电子设备中不可或缺的组成部分。详细参数 FQD10N20CTM的技术规格包括以下几个重要参数： 1. 最大漏极-源极电压 (V_DS)： 200V 2. 最大连续漏极电流 (I_D)： 10A 3. 脉冲漏极电流 (I_DM)： 30A 4. 门极-源极电压 (V_GS)： ±20V 5. 导通电阻 (R_DS(on))： 0.07Ω（典型值） 6. 输入电容 (C_iss)： 1200pF（典型值） 7. 反向恢复时间 (t_rr)： 120ns 8. 工作温度范围 (T_j)： ...

产品型号FQD10N20CTM的Datasheet PDF文件预览

July 2013

FQD10N20C / FQU10N20C

N-Channel QFET^®MOSFET

200 V, 7.8 A, 360 mΩ

Description

Features

7.8 A, 200 V, R

I_D= 3.9 A

= 360 mΩ (Max.)@ V = 10 V,

This N-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductor^®’s proprietary

planar stripe and DMOS technology. This advanced

MOSFET technology has been especially tailored to

reduce on-state resistance, and to provide superior

switching performance and high avalanche energy

strength. These devices are suitable for switched mode

power supplies, active power factor correction (PFC), and

electronic lamp ballasts.

•

DS(on)

•

Low Gate Charge (Typ. 20 nC)

Low Crss (Typ. 40.5 pF)

100% Avalanche Tested

●

◀

▲

●

I-PAK

(TO251)

D-PAK

(TO252)

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

FQD10N20C / FQU10N20C

Unit

Drain-Source Voltage

200

7.8

DSS

- Continuous (T = 25°C)

Drain Current

- Continuous (T = 100°C)

5.0

(Note 1)

Drain Current

- Pulsed

31.2

± 30

210

Gate-Source Voltage

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

7.8

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

5.0

V/ns

dv/dt

5.5

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

0.4

W/°C

°C

T , T

-55 to +150

STG

Maximum lead temperature for soldering purposes,

300

°C

1/8" from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Unit

FQD10N20C / FQU10N20C

Thermal Resistance, Junction-to-Case, Max.

Thermal Resistance, Junction-to-Ambient*

Thermal Resistance, Junction-to-Ambient, Max.

°C/W

2.5

θJC

θJA

110

* When mounted on the minimum pad size recommended (PCB Mount)

www.fairchildsemi.com

FQD10N20C / FQU10N20C Rev. C1

Electrical Characteristics

T = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

Off Characteristics

= 0 V, I = 250 µA

GS D

Drain-Source Breakdown Voltage

200

DSS

∆BV

Breakdown Voltage Temperature

Coefficient

DSS

= 250 µA, Referenced to 25°C

0.28

V/°C

∆T

= 200 V, V = 0 V

100

-100

µA

DSS

Zero Gate Voltage Drain Current

= 160 V, T = 125°C

= 30 V, V = 0 V

Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

GSSF

= -30 V, V = 0 V

GSSR

On Characteristics

= V , I = 250 µA

Gate Threshold Voltage

2.0

4.0

0.36

Ω

GS(th)

Static Drain-Source

On-Resistance

DS(on)

= 10 V, I = 3.9 A

0.29

5.6

= 40 V, I = 3.9 A

Forward Transconductance

Dynamic Characteristics

Input Capacitance

395

510

125

iss

= 25 V, V = 0 V,

Output Capacitance

oss

rss

f = 1.0 MHz

Reverse Transfer Capacitance

40.5

Switching Characteristics

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

190

150

160

d(on)

= 100 V, I = 9.5 A,

= 25 Ω

d(off)

(Note 4)

= 160 V, I = 9.5 A,

3.1

10.5

= 10 V

Drain-Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain-Source Diode Forward Current

7.8

31.2

1.5

Maximum Pulsed Drain-Source Diode Forward Current

= 0 V, I = 7.8 A

Drain-Source Diode Forward Voltage

Reverse Recovery Time

= 0 V, I = 9.5 A,

158

0.97

µC

dI / dt = 100 A/µs

Reverse Recovery Charge

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 5.2mH, I = 7.8A, V = 50V, R = 25 Ω, Starting T = 25°C

3. I ≤ 9.5A, di/dt ≤ 300A/µs, V ≤ BV

Starting T = 25°C

DSS,

4. Essentially independent of operating temperature

www.fairchildsemi.com

FQD10N20C / FQU10N20C Rev. C1

Typical Characteristics

V_GS

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

5.0 V

10¹

10⁰

10^-1

10¹

150^oC

Bottom : 4.5 V

25^oC

-55^oC

10⁰

※

Notes :

1. 250 s Pulse Test

※

Notes :

℃

2. T_C= 25

1. V_DS= 40V

2. 250 s Pulse Test

-1

10⁰

10¹

V_GS, Gate-Source Voltage [V]

V_DS, Drain-Source Voltage [V]

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

1.5

1.0

0.5

0.0

10¹

V_GS= 10V

10⁰

V_GS= 20V

℃

150

℃

※

Notes :

1. V_GS= 0V

2. 250 s Pulse Test

※

℃

Note : T = 25

-1

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

I_D, Drain Current [A]

V_SD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

1200

_iss= C_gs+ C_gd(C_ds= shorted)

C_oss= C_ds+ C

V_DS= 40V

V_DS= 100V

C_rss= C

1000

800

600

400

200

V_DS= 160V

iss

C_oss

rss

※

Note ;

1. V_GS= 0 V

2. f = 1 MHz

※

Note : I_D= 9.5A

-1

10¹

Q_G, Total Gate Charge [nC]

V_DS, Drain-Source Voltage [V]

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

www.fairchildsemi.com

FQD10N20C / FQU10N20C Rev. C1

Typical Characteristics (Continued)

3.0

2.5

2.0

1.5

1.0

0.5

0.0

1.2

1.1

1.0

※

Notes :

0.9

1. V_GS= 0 V

※

Notes :

2. I_D= 250

1. V_GS= 10 V

2. I_D= 3.9 A

0.8

-100

-50

100

150

200

-50

100

150

200

T_J, Junction Temperature [^oC]

T, Junction Temperature [^oC]

Figure 7. Breakdown Voltage Variation

vs Temperature

Figure 8. On-Resistance Variation

vs Temperature

10²

10¹

10⁰

Operationin This Area

is Limited by R _DS(on)

100 µs

1 ms

10 ms

※

Notes :

1. T_C= 25 ^o

2. T_J= 150 ^o

3. Single Pulse

-1

10⁰

10¹

10²

100

125

150

℃

T_C, Case Temperature [

]

V_DS, Drain-Source Voltage [V]

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current

vs Case Temperature

D = 0 .5

1 0 ⁰

※

N o te s

1 . _{θ J C}(t)

2 . D u ty F a c to r, D = t₁/t₂

0 .2

0 .1

℃

/W M a x .

2 .5

3 . T _{J M}

T _C

P _{D M}* Z _{J C}(t)

0 .0 5

1 0 ^-1

0 .0 2

0 .0 1

P_DM

s in g le p u lse

t₁

t₂

1 0 ^-2

1 0 ^-5

1 0 ^-4

1 0 ^-3

1 0 ^-2

1 0 ^-1

1 0 ⁰

1 0 ¹

t₁, S q u a re W a v e P u ls e D u ra tio n [s e c ]

Figure 11. Transient Thermal Response Curve

www.fairchildsemi.com

FQD10N20C / FQU10N20C Rev. C1

Gate Charge Test Circuit & Waveform

V_GS

Same Type

50Kꢀ

as DUT

Q_g

12V

200nF

10V

300nF

V_DS

V_GS

Q_gs

Q_gd

DUT

3mA

Charge

Resistive Switching Test Circuit & Waveforms

R_L

V_DS

90%

V_DS

V_DD

V_GS

R_G

10%

V_GS

DUT

10V

t_d(on)

t_r

t_d(off)

t_f

t _on

t _off

Unclamped Inductive Switching Test Circuit & Waveforms

BV_DSS

--------------------

BV_DSS- V_DD

----

E_AS

LI_AS

V_DS

I_D

BV_DSS

I_AS

R_G

V_DD

I_D(t)

V_DD

V_DS(t)

DUT

10V

t _p

Time

www.fairchildsemi.com

FQD10N20C / FQU10N20C Rev. C1

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

V_DS

I _SD

Driver

R_G

Same Type

as DUT

V_DD

V_GS

• dv/dt controlled by R_G

• I_SDcontrolled by pulse period

Gate Pulse Width

--------------------------

V_GS

D =

Gate Pulse Period

10V

( Driver )

I_FM, Body Diode Forward Current

I _SD

di/dt

( DUT )

I_RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V_SD

V_DS

( DUT )

V_DD

Body Diode

Forward Voltage Drop

www.fairchildsemi.com

FQD10N20C / FQU10N20C Rev. C1

Mechanical Dimensions

D-PAK

TO-252 (DPAK) MOLDED, 3 LEAD, OPTION AA

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without

notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most

recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein,

which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT25 2-003

Dimensions in Millimeters

www.fairchildsemi.com

FQD10N20C / FQU10N20C Rev. C1

Mechanical Dimensions

I-PAK

TO-251 (IPAK) MOLDED, 3LEAD, OPTION AA

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without

notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most

recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein,

which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT25 1-003

Dimensions in Millimeters

www.fairchildsemi.com

FQD10N20C / FQU10N20C Rev. C1

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not

intended to be an exhaustive list of all such trademarks.

2Cool™

AccuPower™

AX-CAP *

BitSiC™

Build it Now™

CorePLUS™

CorePOWER™

CROSSVOLT™

CTL™

Current Transfer Logic™

DEUXPEED

Dual Cool™

EcoSPARK

EfficentMax™

ESBC™

FPS™

F-PFS™

FRFET

Global Power Resource

Green Bridge™

Green FPS™

Green FPS™ e-Series™

Gmax™

GTO™

IntelliMAX™

ISOPLANAR™

Sync-Lock™

®*

PowerTrench

PowerXS™

Programmable Active Droop™

QFET

QS™

Quiet Series™

RapidConfigure™

™

TinyBoost™

TinyBuck™

TinyCalc™

TinyLogic

TINYOPTO™

TinyPower™

TinyPWM™

TinyWire™

Marking Small Speakers Sound Louder Saving our world, 1mW/W/kW at a time™

TranSiC

and Better™

MegaBuck™

MICROCOUPLER™

MicroFET™

MicroPak™

MicroPak2™

MillerDrive™

MotionMax™

mWSaver™

OptoHiT™

SignalWise™

SmartMax™

TriFault Detect™

TRUECURRENT *

μSerDes™

SMART START™

Solutions for Your Success™

SPM

STEALTH™

SuperFET

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

Fairchild

UHC

Fairchild Semiconductor

FACT Quiet Series™

Ultra FRFET™

UniFET™

VCX™

VisualMax™

VoltagePlus™

XS™

FACT

FAST

OPTOLOGIC

OPTOPLANAR

SupreMOS

SyncFET™

FastvCore™

FETBench™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY

PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY

THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE

EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used here in:

1. Life support devices or systems are devices or systems which, (a) are

intended for surgical implant into the body or (b) support or sustain life,

and (c) whose failure to perform when properly used in accordance with

instructions for use provided in the labeling, can be reasonably

expected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, or

system whose failure to perform can be reasonably expected to cause

the failure of the life support device or system, or to affect its safety or

effectiveness.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,

www.Fairchildsemi.com, under Sales Support.

Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their

parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed

application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the

proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild

Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild

Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of

up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and

warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is

committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Datasheet contains the design specifications for product development. Specifications

may change in any manner without notice.

Advance Information

Formative / In Design

Datasheet contains preliminary data; supplementary data will be published at a later

date. Fairchild Semiconductor reserves the right to make changes at any time without

notice to improve design.

Preliminary

First Production

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

make changes at any time without notice to improve the design.

No Identification Needed

Obsolete

Full Production

Datasheet contains specifications on a product that is discontinued by Fairchild

Semiconductor. The datasheet is for reference information only.

Not In Production

Rev. I64

www.fairchildsemi.com

FQD10N20C / FQU10N20C Rev. C1

FQD10N20CTM相关文章

配单直通车

深圳市中利达电子科技有限公司服务专线: 0755-13686833545 在线联系:

QQ：1902134819 复制

QQ：2881689472 复制

深圳市芯福林电子有限公司服务专线: 13418564337 在线联系:

QQ：2881495808 复制

QQ：308365177 复制

北京元坤伟业科技有限公司服务专线: 010-62104931621064316210489162104791 在线联系:

QQ：857273081 复制

QQ：1594462451 复制

首天国际（深圳）科技有限公司服务专线: 0755-82807802/82807803 在线联系:

QQ：528164397 复制

QQ：1318502189 复制

柒号芯城电子商务（深圳）有限公司服务专线: 18922803401 在线联系:

QQ：2881677436 复制

QQ：2881620402 复制

FQD10N20CTM产品参数

型号:	FQD10N20CTM
Brand Name：	Fairchild Semiconductor
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Transferred
IHS 制造商：	FAIRCHILD SEMICONDUCTOR CORP
零件包装代码：	DPAK
包装说明：	LEAD FREE, DPAK-3
针数：	3
制造商包装代码：	TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA &AB
Reach Compliance Code：	not_compliant
ECCN代码：	EAR99
HTS代码：	8541.29.00.95
风险等级：	5.31
Samacsys Confidence：	4
Samacsys Status：	Released
Samacsys PartID：	167425
Samacsys Pin Count：	3
Samacsys Part Category：	MOSFET (N-Channel)
Samacsys Package Category：	Other
Samacsys Footprint Name：	TO-252-3L(DPAK)
Samacsys Released Date：	2015-07-12 18:27:54
Is Samacsys：	N
其他特性：	FAST SWITCHING
雪崩能效等级（Eas）：	210 mJ
外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	200 V
最大漏极电流 (Abs) (ID)：	7.8 A
最大漏极电流 (ID)：	7.8 A
最大漏源导通电阻：	0.36 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-252AA
JESD-30 代码：	R-PSSO-G2
JESD-609代码：	e3
湿度敏感等级：	1
元件数量：	1
端子数量：	2
工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	50 W
最大脉冲漏极电流 (IDM)：	31.2 A
认证状态：	Not Qualified
子类别：	FET General Purpose Power
表面贴装：	YES
端子面层：	Matte Tin (Sn)
端子形式：	GULL WING
端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

电子百科

产品导航

产品型号FQD10N20CTM的概述

产品型号FQD10N20CTM的Datasheet PDF文件预览

FQD10N20CTM相关产品

FQD10N20CTM相关文章

IC37:专业IC行业平台