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产品型号FQPF7N65C的概述

芯片FQPF7N65C的概述 FQPF7N65C是一款高压N沟道MOSFET，由Fairchild Semiconductor（现为意法半导体的一部分）制造。这款MOSFET在业界广泛应用，主要用于电源管理、电机驱动和开关电源等高压应用场合。该器件的设计旨在提供极低的导通电阻和高的开关速度，从而帮助设计师实现更高效的电源转换和更稳定的电路性能。该器件的额定电压为650V，额定电流为7A，适合在高电压、大电流的应用场景中使用。FQPF7N65C的性能特征使其成为现代电子设计中不可或缺的重要组成部分。恰当参数 FQPF7N65C的详细参数可以对其性能有非常深入的理解，包括但不限于以下几个方面： 1. 最大漏极-源极电压 (V_DS): 650V 2. 最大漏极电流 (I_D): 7A 3. 通态电阻 (R_DS(on)): 0.8Ω @ V_GS = 10V 4. 门极阈值电压 (V_...

产品型号FQPF7N65C的Datasheet PDF文件预览

QFET

FQP7N65C/FQPF7N65C

650V N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

•

7A, 650V, R

= 1.4Ω @V = 10 V

DS(on) GS

Low gate charge ( typical 28 nC)

Low Crss ( typical 12 pF)

Fast switching

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switched mode power supplies,

active power factor correction, electronic lamp ballasts

based on half bridge topology.

100% avalanche tested

Improved dv/dt capability

●

◀

▲

●

TO-220F

FQPF Series

TO-220

FQP Series

G D

D S

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

FQP7N65C

FQPF7N65C

Units

Drain-Source Voltage

650

DSS

- Continuous (T = 25°C)

Drain Current

7 *

- Continuous (T = 100°C)

- Pulsed

4.2

4.2 *

28 *

(Note 1)

Drain Current

dv/dt

Gate-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

± 30

212

1.6

4.5

V/ns

GSS

(Note 2)

(Note 1)

(Note 3)

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (T = 25°C)

160

- Derate above 25°C

Operating and Storage Temperature Range

1.28

0.42

W/°C

°C

T , T

-55 to +150

300

STG

Maximum lead temperature for soldering purposes,

°C

1/8" from case for 5 seconds

* Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol

Parameter

FQP7N65C

FQPF7N65C

Units

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink Typ.

Thermal Resistance, Junction-to-Ambient

0.78

0.5

62.5

2.4

62.5

θJC

θCS

θJA

Rev. A, May 2004

Electrical Characteristics

T = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

∆BV

= 0 V, I = 250 µA

GS D

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature

Coefficient

650

DSS

∆T

= 250 µA, Referenced to 25°C

0.8

V/°C

= 650 V, V = 0 V

100

-100

µA

DSS

Zero Gate Voltage Drain Current

= 520 V, T = 125°C

= 30 V, V = 0 V

Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

GSSF

GSSR

= -30 V, V = 0 V

On Characteristics

= V , I = 250 µA

Gate Threshold Voltage

Static Drain-Source

On-Resistance

2.0

1.2

4.0

1.4

Ω

GS(th)

DS(on)

= 10 V, I = 3.5 A

= 40 V, I = 3.5 A

(Note 4)

Forward Transconductance

Dynamic Characteristics

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

955

100

1245

130

iss

= 25 V, V = 0 V,

oss

rss

f = 1.0 MHz

Switching Characteristics

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

4.5

110

190

120

d(on)

= 325 V, I = 7A,

= 25 Ω

d(off)

(Note 4, 5)

= 520 V, I = 7A,

= 10 V

Drain-Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain-Source Diode Forward Current

Maximum Pulsed Drain-Source Diode Forward Current

400

3.3

1.4

µC

= 0 V, I = 7A

Drain-Source Diode Forward Voltage

Reverse Recovery Time

= 0 V, I = 7A,

dI / dt = 100 A/µs

(Note 4)

Reverse Recovery Charge

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 8mH, I = 7A, V = 50V, R = 25 Ω, Starting T = 25°C

DSS,

3. I ≤ 7A, di/dt ≤ 200A/µs, V ≤ BV

Starting T = 25°C

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Rev. A, May 2004

Typical Characteristics

V_GS

Top :

15.0 V

10.0V

8.0V

7.0V

6.0V

5.5V

10¹

10⁰

10¹

10⁰

Bottom: 5.0V

150 C

-55 C

25 C

※

Notes :

1. 250µ s Pulse Test

2. T_C= 25

※

Notes :

℃

1. V_DS= 40V

2. 250µ s Pulse Test

-1

10¹

V_GS, Gate-Source Voltage [V]

V , Drain-Source Voltage [V]

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

3.0

10¹

10⁰

2.5

2.0

1.5

1.0

V_GS= 10V

150℃

25℃

V_GS= 20V

※

Notes :

1. V_GS= 0V

2. 250µ s Pulse Test

※

Note: T = 25

℃

-1

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

I_D, DrainCurrent [A]

V_SD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

2000

1600

1200

800

400

_iss= C_gs+ C_gd(C_ds= shorted)

_oss= C + C

_rss= C^ds

V_DS= 130V

V_DS= 325V

V_DS= 520V

iss

oss

※

Note ;

1. V_GS= 0 V

2. f = 1 MHz

rss

※

Note : I_D= 7A

-1

10¹

Q_G, Total Gate Charge [nC]

V_DS, Drain-Source Voltage [V]

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

Rev. A, May 2004

Typical Characteristics (Continued)

1.2

1.1

1.0

3.0

2.5

2.0

1.5

1.0

0.5

0.0

0.9

※

Notes :

※

Notes :

1. V = 0 V

2. I_D^G=^S250 µ A

1. V = 10 V

2. I_D^G=^S3.5 A

0.8

-100

-50

100

150

200

-100

-50

100

150

200

T, Junction Temperature [^oC]

Figure 7. Breakdown Voltage Variation

vs Temperature

Figure 8. On-Resistance Variation

vs Temperature

Operation in This Area

is Limited by R _DS(on)

Operation in This Area

is Limited by R _DS(on)

100

1 ms

10 ms

100 ms

µs

10 µs

10¹

10⁰

10^-1

10^-2

100

1 ms

10 ms

µs

-1

※

Notes :

※

Notes :

1. T_C= 25 ^oC

1. T_C= 25 ^o

2. T = 150 ^oC

2. T_J= 150 ^o

3. Single Pulse

-2

10⁰

10¹

10²

10³

10¹

V_DS, Drain-Source Voltage [V]

Figure 9-1. Maximum Safe Operating Area

for FQP7N65C

Figure 9-2. Maximum Safe Operating Area

for FQPF7N65C

100

125

150

T_C, Case Temperature [℃]

Figure 10. Maximum Drain Current

vs Case Temperature

Rev. A, May 2004

Typical Characteristics (Continued)

10 ⁰

D = 0 .5

0 .2

※

N otes

10 ^-1

(t)

= 0.78 ℃ /W M ax.

2. D^θu^Jt^Cy Factor, D =t₁/t₂

0 .1

3. T_JM

T_C

P _{D M}

Z_{θ JC}(t)

0 .0 5

0 .0 2

P_DM

t₁

0 .0 1

sin g le p u lse

10 ^-2

t₂

1 0^-5

10 ^-4

1 0^-3

10 ^-2

10 ^-1

1 0⁰

10 ¹

t₁, S q u are W ave P ulse D u ra tio n [sec]

Figure 11. Transient Thermal Response Curve for FQP7N65C

D = 0 .5

10 ⁰

0 .2

0 .1

0 .0 5

※

N otes

10 ^-1

1. Z

(t)

= 2.4 ℃ /W M ax.

2. D^θu^Jt^Cy Factor, D =t₁/t₂

0 .0 2

0 .0 1

3. T_JM

T_C

P _{D M}* Z_{θ J C}(t)

P_DM

t₁

10 ^-2

sin g le p u lse

10 ^-4

t₂

1 0^-5

1 0^-3

10 ^-2

10 ^-1

1 0⁰

10 ¹

t₁, S q u are W ave P ulse D u ra tio n [sec]

Figure 11-2. Transient Thermal Response Curve for FQPF7N65C

Rev. A, May 2004

Gate Charge Test Circuit & Waveform

V_GS

Same Type

50KΩ

as DUT

10V

Q_g

12V

200nF

300nF

V_DS

V_GS

Q_gs

Q_gd

DUT

3mA

Charge

Resistive Switching Test Circuit & Waveforms

R_L

V_DS

90%

V_DS

V_DD

V_GS

R_G

10%

V_GS

DUT

10V

t_d(on)

t_r

t_d(off)

t_f

t _on

t _off

Unclamped Inductive Switching Test Circuit & Waveforms

BV_DSS

----

--------------------

BV_DSS- V_DD

E_AS

LI_AS

V_DS

I_D

BV_DSS

I_AS

R_G

V_DD

I_D(t)

V_DD

V_DS(t)

DUT

10V

t _p

Time

Rev. A, May 2004

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

V_DS

I _SD

Driver

R_G

Same Type

as DUT

V_DD

V_GS

• dv/dt controlled by R_G

• I_SDcontrolled by pulse period

Gate Pulse Width

V_GS

--------------------------

Gate Pulse Period

D =

10V

( Driver )

I_FM, Body Diode Forward Current

I _SD

di/dt

( DUT )

I_RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V_SD

V_DS

( DUT )

V_DD

Body Diode

Forward Voltage Drop

Rev. A, May 2004

Package Dimensions

TO-220

4.50 ±0.20

9.90 ±0.20

(8.70)

+0.10

–0.05

1.30

ø3.60 ±0.10

1.27 ±0.10

1.52 ±0.10

0.80 ±0.10

+0.10

–0.05

0.50

2.40 ±0.20

2.54TYP

[2.54 ±0.20]

10.00 ±0.20

Dimensions in Millimeters

Rev. A, May 2004

Package Dimensions (Continued)

TO-220F

2.54 ±0.20

10.16 ±0.20

ø3.18 ±0.10

(7.00)

(0.70)

(1.00x45°)

MAX1.47

0.80 ±0.10

0.35 ±0.10

+0.10

–0.05

0.50

2.76 ±0.20

2.54TYP

[2.54 ±0.20]

9.40 ±0.20

Dimensions in Millimeters

Rev. A, May 2004

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not

intended to be an exhaustive list of all such trademarks.

FAST^®

ISOPLANAR™

LittleFET™

MICROCOUPLER™

MicroFET™

MicroPak™

MICROWIRE™

MSX™

Power247™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

CEx™

FASTr™

PowerSaver™

PowerTrench^®

QFET^®

ActiveArray™

Bottomless™

CoolFET™

FPS™

FRFET™

GlobalOptoisolator™

GTO™

QS™

CROSSVOLT™

DOME™

QT Optoelectronics™

Quiet Series™

RapidConfigure™

RapidConnect™

µSerDes™

TinyLogic^®

HiSeC™

TINYOPTO™

TruTranslation™

UHC™

EcoSPARK™

I²C™

MSXPro™

E²CMOS™

i-Lo™

OCX™

EnSigna™

ImpliedDisconnect™

OCXPro™

UltraFET^®

FACT™

OPTOLOGIC^®

OPTOPLANAR™

PACMAN™

POP™

SILENT SWITCHER^®VCX™

SMART START™

SPM™

FACT Quiet Series™

Across the board. Around the world.™

The Power Franchise^®

Stealth™

Programmable Active Droop™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or In

Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. I11

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